DIODE V 642 Search Results

D2228N

Abstract: D448N D5809N D758N thyristor 1651
Contextual Info: Sperr - Diode + Gleichspannung Sperrspannung Bauelement VRRM 100 V 200 V 400 V 200 V 400 V 800 V - Kühlblöcke für verstärkte Luftkühlung Temp. tA Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl

germanium

Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Contextual Info: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014

NEC K 2500

Abstract: DAD 1000 05611 LD1104 NDL3000 laser diode for printer NEC diode J22686 6W7525
Contextual Info: ST a ^ DE|b4E7525 642 6 427525 Nfcv ODDSt.ll fi N E C TENTATIVE SPEC IFIC ATION ELECTRONICS'INC 59C 05611 7 D T-41-05 LASER DIODE ELECTRON DEVICE NDL3000 D A D ,V D APPLICA TIO N AIGaAs DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTION NDL3000 laser diode is developed for DAD Digital Audio Disk , Video Disk optical head and non impact laser printer. The

DL-3147-021

Contextual Info: Ordering number : ENN5861C Red Laser Diode DL-3147-021 DL-3147-021 Red Laser Diode Features Package Dimensions : 645 nm Typ. : Ith = 30 mA (Typ.) : Vop = 2.3 V (Typ.) : ø 5.6 mm ø4.4 ø3.55±0.1 ø1.6 Effective window diameter 1.0min. 1 3 Applications

c 3953

Abstract: 6914 D1809N PD 1515 V 2238 D1069N D269N D3301N D749N D849N
Contextual Info: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 670 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]

red laser pointer

Abstract: DL-3038-013
Contextual Info: Ordering number : ENN6872A Red Laser Diode DL-3038-013 DL-3038-013 Red Laser Diode Features Package Dimensions : 635 nm Typ. : 5 mW CW : Ith = 30 mA (Typ.) : Vop = 2.2 V (Typ.) ø5.35 ø4.75±0.15 ø2.1 Effective window diameter 1.0min. 1 3 Top view 2 0.45±0.1

DL-4038-021

Contextual Info: Ordering number : ENN5857C Red Laser Diode DL-4038-021 DL-4038-021 Red Laser Diode Features Package Dimensions : 635 nm Typ. : 10mW CW : Ith = 35 mA (Typ.) : Vop = 2.2 V (Typ.) ø5.35 ø4.75±0.15 ø2.1 Effective window diameter 1.0min. 1 3 Top view 2 0.45±0.1

DL-3148-013

Contextual Info: Ordering number : ENN6879A Red Laser Diode DL-3148-013 DL-3148-013 Red Laser Diode Features Package Dimensions : 635 nm Typ. : Ith = 30 mA (Typ.) : 5 mW at 40°C : Vop = 2.2 V (Typ.) ø4.4 ø3.55±0.1 ø1.6 Effective window diameter 1.0min. 1 3 Top view

D1809N

Abstract: D849N D269N datasheet 346 766 D1069N D3301N D749N
Contextual Info: M1 - Schaltung ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 440 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode D Thyristor

DL-3038-033

Contextual Info: Ordering number : ENN5855C Red Laser Diode DL-3038-033 DL-3038-033 Red Laser Diode Features : 635 nm Typ. : Ith = 30 mA (Typ.) : 5 mW at 50°C : Vop = 2.2 V (Typ.) ø5.35 ø4.75±0.15 ø2.1 Effective window diameter 1.0min. 1 3 Top view 2 0.45±0.1 Applications

c 3953

Abstract: 6914 D1809N a 4504 D269N k50 transistor D1069N D3301N D849N diode 8407
Contextual Info: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 670 V 3600 V + Kühlblöcke für Wasserkühlung Wasser men. vL pro KB Temp. tA Satzstrom Id Verlustl. P d Schaltung Diode D [°C] [A]

T1059N

Abstract: T1589N T2159N T308N T458N T709N KD202V
Contextual Info: Koppel - Thyristor + Gleichspannung + 1100 V Sperrspannung Bauelement VDRM/RRM 2200 V - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Id Schaltung Wasser men. vL pro KB Diode D Thyristor T Kühlblock KB [ltr/min] Anzahl KB pro Anzahl

Contextual Info: ST a ^ »E|b4S7SaS 6642 427525 M bv O DDSt.ll N E C fi TENTATIVE S P E C IF IC ATION ELECTRONICS'INC “ 59C 05611 D T-41-05 LASER DIODE NDL3000 E L E C T R O N D E V IC E DAD,VD A PPLICA TIO N AIGaAs DOUBLE H ETERO STRU CTU RE LA SER DIODE D E S C R IP T IO N

Contextual Info: LESHAN RADIO COMPANY, LTD. Switching Diode FEATURE LBAS16HT1G ƽSmall plastic SMD package. ƽContinuous reverse voltage: max. 75 V. ƽHigh-speed switching in hybrid thick and thin-film circuits. 1 ƽPb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB521S-30T1 zApplictions Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 IO=200mA guaranteed despite the size. Low VF.(V F=0.40V Typ. At 200mA)

Contextual Info: 5SDD 49H3000 5SDD 49H3000 Old part no. DV 889-4860-30 Rectifier Diode Properties § Industry standard housing § Suitable for parallel operation § High operating temperature § Low forward voltage drop Key Parameters = 3 000 V RRM = 4 865 I FAVm = 64 000

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE Pb-Free package is available o MAXIMUM RATINGS TA = 25 C Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA PD 200 mW 1.6 mW/°C TJ, Tstg

MODEL550

Abstract: GM4WA25300A 8085 traffic light control EIAJ C-3
Contextual Info: ^ SH ARP -osa S P E C -N o — ISSUE D T ï ï 72 Feb-6-07 COMPOUND SEMICONDUCTOR SYSTEMS DIVISION ELECTRONIC COMPONENTS(ELECOM GROUP SHARP CORPORATION TECHNICAL LITERATURE DEVICE SPECIFICATION FOR LIGHT EMITTING DIODE MODEL No. GM4WA25300A CU STO M ER S' A PPRO V A L

D01608-683

Contextual Info: 19-1183; Rev 0; 6/97 V M / X I A I High-Efficiency, Step-Up OC-DC Converters fo r 1V Inputs Each device consists of an internal 1Q, N-channel MOSFET power switch; a built-in synchronous rectifier that acts as the catch diode; an oscillator; a reference; and pulse-frequency-modulation PFM control circuitry.

SEMIKRON SKIIP 642 GB 120 - 208 CTV

Abstract: 500a diode Diode 500A
Contextual Info: SKiiP 642 GB 120 - 208 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms

642 gh

Abstract: "642 GH" Diode c 642
Contextual Info: SKiiP 642 GH 120 - 2*208 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms

Contextual Info: SEMiX703GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX703GAL126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V

Contextual Info: SEMiX703GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -40 . 150 °C

Contextual Info: SEMiX703GAR126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX703GAR126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V