DIODE V 642 Search Results

skiip gb 120

Contextual Info: s e MIKROn SKiiP 642 G B 120 - 208 CTV Absolute Maximum Ratings Symbol |Conditions 11 Values Units 1200 900 600 - 4 0 . . . + 150 3000 51 600 1200 4300 93 V V A °C V A A A kAas IGBT & Inverse Diode V ces V c c 91 lc T |3 V»oi4) If Ifm Ifsm f t Diode) Operating D C link voltage

D4457N

Abstract: D2228N D448N D5807N D5809N D758N KC30 613
Contextual Info: Sperr - Diode + Gleichspannung Sperrspannung Bauelement VRRM 100 V 200 V 400 V 200 V 400 V 800 V - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock KB [ltr/s]

D2228N

Abstract: D448N D5809N D758N thyristor 1651
Contextual Info: Sperr - Diode + Gleichspannung Sperrspannung Bauelement VRRM 100 V 200 V 400 V 200 V 400 V 800 V - Kühlblöcke für verstärkte Luftkühlung Temp. tA Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl

DIODE A6 sod110

Abstract: sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323
Contextual Info: Philips Semiconductors Comprehensive diode range: • Zener diodes • Schottky-barrier diode • Switching diodes • Band-switching diode SOD110 High-performance ceramic package www.semiconductors.philips.com V-packTM technology for higher power dissipation

germanium

Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Contextual Info: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014

NEC K 2500

Abstract: DAD 1000 05611 LD1104 NDL3000 laser diode for printer NEC diode J22686 6W7525
Contextual Info: ST a ^ DE|b4E7525 642 6 427525 Nfcv ODDSt.ll fi N E C TENTATIVE SPEC IFIC ATION ELECTRONICS'INC 59C 05611 7 D T-41-05 LASER DIODE ELECTRON DEVICE NDL3000 D A D ,V D APPLICA TIO N AIGaAs DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTION NDL3000 laser diode is developed for DAD Digital Audio Disk , Video Disk optical head and non impact laser printer. The

ba278

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D739 BA278 Band-switching diode Preliminary specification 2001 Jan 15 Philips Semiconductors Preliminary specification Band-switching diode BA278 PINNING FEATURES • Small plastic SMD package PIN ; • Continuous reverse voltage: max. 35 V

diode smd ED 68

Abstract: diode smd ED 74 diode smd ED 84 sc793 BA278 BP317 diode smd marking ed diode ED 84 smd 816
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D739 BA278 Band-switching diode Preliminary specification 2001 Jan 15 Philips Semiconductors Preliminary specification Band-switching diode BA278 PINNING FEATURES • Small plastic SMD package PIN ; • Continuous reverse voltage: max. 35 V

str 6707

Abstract: s4 69 diode smd BA277 DIODE S4 66 MCC SMD DIODE smd diode 6F diode 81 bp diode marking code 777 BA277,115 DIODE smd marking pl
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BA277 Band-switching diode Product specification 1998 May 06 Philips Semiconductors Product specification Band-switching diode BA277 PINNING FEATURES • Small plastic SMD package PIN 
• Continuous reverse voltage: max. 35 V

DL-3147-021

Contextual Info: Ordering number : ENN5861C Red Laser Diode DL-3147-021 DL-3147-021 Red Laser Diode Features Package Dimensions : 645 nm Typ. : Ith = 30 mA (Typ.) : Vop = 2.3 V (Typ.) : ø 5.6 mm ø4.4 ø3.55±0.1 ø1.6 Effective window diameter 1.0min. 1 3 Applications

diode AY 101

Abstract: BAL74W
Contextual Info: DISCRETE SEMICONDUCTORS [Mm SMEET BAL74W High-speed diode 1999 May 05 Product specification Supersedes data of 1996 Sep 03 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification High-speed diode BAL74W FEATURES DESCRIPTION • V ery sm all plastic S M D package

c 3953

Abstract: 6914 D1809N PD 1515 V 2238 D1069N D269N D3301N D749N D849N
Contextual Info: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 670 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]

6914

Abstract: 2481 diode 1298 D1069N D1809N D269N D3301N D749N D849N
Contextual Info: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 670 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]

Contextual Info: Ordering number : ENN6885A Red Laser Diode DL-4038-031 DL-4038-031 Red Laser Diode Features Package Dimensions : 635 nm Typ. : 10mW CW : Ith = 35 mA (Typ.) : Vop = 2.3 V (Typ.) : Tc = 50°C ø5.35 ø4.75±0.15 ø2.1 Effective window diameter 1.0min. 1 3

red laser pointer

Abstract: DL-3038-013
Contextual Info: Ordering number : ENN6872A Red Laser Diode DL-3038-013 DL-3038-013 Red Laser Diode Features Package Dimensions : 635 nm Typ. : 5 mW CW : Ith = 30 mA (Typ.) : Vop = 2.2 V (Typ.) ø5.35 ø4.75±0.15 ø2.1 Effective window diameter 1.0min. 1 3 Top view 2 0.45±0.1

DL-4038-035

Contextual Info: Ordering number : ENN7578 Red Laser Diode DL-4038-035 DL-4038-035 Red Laser Diode Features Package Dimensions Tolerance : ±0.2 : mm Unit 9.0-0.03 : 635 nm Typ. : 20 mW CW : Ith = 40 mA (Typ.) : Vop = 2.3 V (Typ.) 5.35 4.75±0.15 2.1 Effective window diameter 1.0min.

DL-4038-021

Contextual Info: Ordering number : ENN5857C Red Laser Diode DL-4038-021 DL-4038-021 Red Laser Diode Features Package Dimensions : 635 nm Typ. : 10mW CW : Ith = 35 mA (Typ.) : Vop = 2.2 V (Typ.) ø5.35 ø4.75±0.15 ø2.1 Effective window diameter 1.0min. 1 3 Top view 2 0.45±0.1

DL-3148-013

Contextual Info: Ordering number : ENN6879A Red Laser Diode DL-3148-013 DL-3148-013 Red Laser Diode Features Package Dimensions : 635 nm Typ. : Ith = 30 mA (Typ.) : 5 mW at 40°C : Vop = 2.2 V (Typ.) ø4.4 ø3.55±0.1 ø1.6 Effective window diameter 1.0min. 1 3 Top view

Contextual Info: Ordering number : ENN6884A Red Laser Diode DL-4038-026 DL-4038-026 Red Laser Diode Features Package Dimensions : 635 nm Typ. : 20 mW CW : Ith = 40 mA (Typ.) : Vop = 2.3 V (Typ.) ø5.35 ø4.75±0.15 ø2.1 Effective window diameter 1.0min. 1 3 Top view 2 0.45±0.1

D1809N

Abstract: D849N D269N datasheet 346 766 D1069N D3301N D749N
Contextual Info: M1 - Schaltung ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 440 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode D Thyristor

DL-3038-033

Contextual Info: Ordering number : ENN5855C Red Laser Diode DL-3038-033 DL-3038-033 Red Laser Diode Features : 635 nm Typ. : Ith = 30 mA (Typ.) : 5 mW at 50°C : Vop = 2.2 V (Typ.) ø5.35 ø4.75±0.15 ø2.1 Effective window diameter 1.0min. 1 3 Top view 2 0.45±0.1 Applications

6914

Abstract: c 3953 a 4504 D1069N D1809N D269N D3301N D849N 3953
Contextual Info: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 670 V 3600 V + Kühlblöcke für Wasserkühlung Wasser men. vL pro KB Temp. tA Satzstrom Id Verlustl. P d Schaltung Diode D [°C] [A]

c 3953

Abstract: 6914 D1809N a 4504 D269N k50 transistor D1069N D3301N D849N diode 8407
Contextual Info: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 670 V 3600 V + Kühlblöcke für Wasserkühlung Wasser men. vL pro KB Temp. tA Satzstrom Id Verlustl. P d Schaltung Diode D [°C] [A]

T1059N

Abstract: T1589N T2159N T308N T458N T709N KD202V
Contextual Info: Koppel - Thyristor + Gleichspannung + 1100 V Sperrspannung Bauelement VDRM/RRM 2200 V - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Id Schaltung Wasser men. vL pro KB Diode D Thyristor T Kühlblock KB [ltr/min] Anzahl KB pro Anzahl