DIODE ULTRA SPEED VFM TIME FR Search Results

SF10A400HD

Abstract: sF10A400 SF10A400H marking code 1A diode
Contextual Info: SF10A400HD Ultrafast Recovery Rectifier ULTRA FAST RECOVERY POWER RECTIFIER Features  High voltage and high reliability  Ultrafast reverse recovery time  High speed switching  Low power loss and High efficiency  Halogen-free component and RoHS compliant device

SF10A400HD

Contextual Info: SF10A400HD Ultrafast Recovery Rectifier ULTRA FAST RECOVERY POWER RECTIFIER Features  High volt age and high reliabilit y  Ult rafast reverse recovery t im e  High speed swit ching  Low pow er loss and High efficiency  Halogen-free component and RoHS compliant device

Contextual Info: PD - 95679A HFA06PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free 1 Benefits VR = 1200V BASE CATHODE CATHODE 4 VF typ. * = 2.4V

B60S

Abstract: HFA04TB60S IRFP250
Contextual Info: PD-96035 HFA04TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VR = 600V BASE + 2 VF = 1.8V Qrr * = 40nC

SF10A600HPI

Contextual Info: SF10A600HPI Semiconductor Ultra Fast Recovery Diode Applications PIN Connection • High speed switching and rectification • Switching mode power supply • Free Wheeling diode and snubber circuit 1 Features 2 3 1. Anode 2. Cathode 3. Anode • Ultra-fast reverse recovery time: trr=30ns Max.

B120

Abstract: HFA08TB120 IRFP250
Contextual Info: PD-95736 HFA08TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • • VR = 1200V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF typ. * = 2.4V 4 IF (AV) = 8.0A

irfp250 applications

Abstract: marking code C76 HFA08PB120 IRFP250
Contextual Info: PD - 95680A HFA08PB120PbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM VR = 1200V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF typ. * = 2.4V 4 IF (AV) = 8.0A

transistor SMD MARKING CODE HF

Abstract: smd code HF transistor TRANSISTOR SMD MARKING CODE WT AAAA series SMD transistor smd code HF diode TRANSISTOR SMD MARKING CODE X D AAAA transistor smd code marking tm SMD MARKING CODE transistor WW marking code dt2 transistor
Contextual Info: PD-96036 HFA06TB120SPbF. Series HEXFRED Ultrafast, Soft Recovery Diode TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Specified at Operating Conditions • Lead-Free K VR = 1200V BASE + 2 VF(typ.)* = 2.4V IF(AV) = 6.0A

p035h

Abstract: HFA16PA120CPBF HFA16PA120C HFA16PA60C IRFP250
Contextual Info: PD-95974 HFA16PA120CPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • * VR = 1200V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF max. = 3.3V IF (AV) = 8.0A IRRM (typ.) = 4.5A

Contextual Info: PD - 95680 HFA08PB120PbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM VR = 1200V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF typ. * = 2.4V 4 IF (AV) = 8.0A

B120

Abstract: HFA06TB120 IRFP250 HFA06TB120PBF
Contextual Info: PD-95734 HFA06TB120PbF HEXFRED • • • • • • TM Ultrafast, Soft Recovery Diode Features BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free 4 IF AV = 6.0A Qrr (typ.)= 116nC 2 1 Benefits

Contextual Info: FFP30U60DN FFP30U60DN Features • High voltage and high reliability • High speed switching • Low forward voltage Applications • • • • General purpose Switching mode power supply Free-wheeling diode for motor application Power switching circuits

600v 10A ultra fast recovery diode to220

Contextual Info: FFP10U60DN FFP10U60DN Features • High voltage and high reliability • High speed switching • Low forward voltage Applications • • • • General purpose Switching mode power supply Free-wheeling diode for motor application Power switching circuits

Contextual Info: FFP05U60DN FFP05U60DN Features • High voltage and high reliability • High speed switching • Low forward voltage Applications • • • • General purpose Switching mode power supply Free-wheeling diode for motor application Power switching circuits

mbn400c20

Contextual Info: IGBT MODU ODULE MBN400C20 Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES * High thermal fatigue durability. delta Tc=70°C,N>20,000cycles * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module.

Contextual Info: PD-96035 HFA04TB60SPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VR = 600V BASE + 2 VF = 1.8V Qrr * = 40nC

Contextual Info: PD - 95679A HFA06PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free 1 Benefits VR = 1200V BASE CATHODE CATHODE 4 VF typ. * = 2.4V

MBN1800D17C

Contextual Info: IGBT MODU ODU L E MBN1800D17C Silicon N-channel IGBT TENTATIVE SPECIFICATION OUTLINE DRAWING Unit in mm FEAT EATURES RES * High thermal fatigue durability. delta Tc=70°C,N>20,000cycles 6-M8 * low noise due to built-in free-wheeling 3-M4 diode - ultra soft fast recovery diode(USFD).

MBN600C33A

Abstract: MBN600C33
Contextual Info: IGBT MODU ODULE MBN600C33A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES * High thermal fatigue durability. 2-M8 2-M4 delta Tc=70°C,N>20,000cycles * low noise due to built-in free-wheeling 4-φ5.8 diode - ultra soft fast recovery diode(USFD).

MBN1200D33A

Abstract: ic 555N MBN1200D33
Contextual Info: IGBT MODU ODULE MBN1200D33A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES * High thermal fatigue durability. delta Tc=70°C,N>20,000cycles 6-M8 * low noise due to built-in free-wheeling 3-M4 diode - ultra soft fast recovery diode(USFD).

800A DC diode

Abstract: MBL800E33D igbt 800A
Contextual Info: Spec.No.IGBT-SP-03009 R1 IGBT MODULE MBL800E33D Preliminary SPEC. Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70℃,N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).

ultra fast recovery diode

Abstract: SF10A600H
Contextual Info: SF10A600H Semiconductor Ultra Fast Recovery Diode Applications • High speed switching and rectification • Switching mode power supply • Free wheeling diode and snubber circuit Features • Ultra-fast reverse recovery time: trr=50ns Max. • Low forward voltage & low reverse current

MBN600C20

Abstract: 600A igbt 100khz
Contextual Info: IGBT MODU ODULE MBN600C20 Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES 2-M8 * High thermal fatigue durability. 2-M4 delta Tc=70°C,N>20,000cycles * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD).

ic 555N

Abstract: MBN1200D25
Contextual Info: IGBT MODU ODU L E MBN1200D25B Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES * High thermal fatigue durability. delta Tc=70°C,N>20,000cycles 6-M8 * low noise due to built-in free-wheeling 3-M4 diode - ultra soft fast recovery diode(USFD).