DIODE UF MARKING CODE Search Results

Contextual Info: STS5DNF20V N-channel 20 V, 0.030 Ω typ, 5 A STripFET II Power MOSFET in a SO-8 package Datasheet - production data Features Order code VDSS STS5DNF20V 20 V RDS on max. ID 0.040 Ω @ 4.5 V 0.045 Ω @ 2.7 V 5A • Ultra low threshold gate drive (2.7 V)

Contextual Info: STS8C5H30L N-channel 30 V, 0.018 Ω typ., 8 A, P-channel 30 V, 0.045 Ω typ., 5 A Power MOSFET in a SO-8 package Datasheet - production data Features Order code Channel VDS 5 N 8 STS8C5H30L 30 V P RDS on max ID 0.022 Ω 8A 0.055 Ω 5A • Conduction losses reduced

Contextual Info: STL150N3LLH5 N-channel 30 V, 0.0014 Ω typ., 35 A STripFET V Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 Order code VDS RDS on max. ID STL150N3LLH5 30 V 0.00175 Ω 35 A (1) 1. The value is rated according Rthj-pcb

Contextual Info: STL4N10F7 N-channel 100 V, 0.062 Ω typ., 4.5 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet - production data Features 1 2 Order code VDS RDS on max ID STL4N10F7 100 V 0.07 Ω 4.5 A • N-channel enhancement mode

P40NF10

Abstract: STP40NF10 d1 marking code dpak transistor p40nf S2180
Contextual Info: STP40NF10 N-channel 100 V, 0.025 Ω, 50 A TO-220 low gate charge STripFET II Power MOSFET Features Order code VDSS RDS on max. ID STP40NF10 100 V < 0.028 Ω 50 A • Exceptional dv/dt capability ■ Low gate charge ■ 100% avalanche tested 3 1 2 TO-220

Contextual Info: STL160N3LLH6 N-channel 30 V, 0.0011 Ω typ., 45 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet − production data Features Order code VDSS RDS on max ID STL160N3LLH6 30 V 0.0013 Ω 45 A (1) 1. The value is rated according Rthj-pcb

54NM65ND

Contextual Info: STW54NM65ND N-channel 650 V, 0.055 Ω typ., 49 A FDmesh II Power MOSFET with fast diode in a TO-247 package Datasheet — production data Features Order code VDSS (@Tjmax) RDS(on) max. ID STW54NM65ND 710 V < 0.065 Ω 49 A • The worldwide best RDS(on) * area amongst the

STW56NM60N

Contextual Info: STW56NM60ND N-channel 600 V, 0.047 Ω typ., 50 A FDmesh II Power MOSFET in TO-247 package Datasheet — preliminary data Features Order code VDSS @ TJMAX RDS on max ID STW56NM60ND 650 V < 0.06 Ω 50 A • The worldwide best RDS(on) * area amongst the fast recovery diode devices

Contextual Info: STE60N105DK5 N-channel 1050 V, 0.1 Ω typ., 44 A Zener protected SuperMESH 5 Power MOSFET in a ISOTOP package Datasheet — preliminary data Features Oreder code VDSS STE60N105DK5 1050 V RDS on max ID PTOT 0.120 Ω 44 A 625 W • Worldwide best RDS(on)*area

Contextual Info: STY50N105DK5 N-channel 1050 V, 0.1 Ω typ., 44 A Zener-protected SuperMESH 5 Power MOSFET in a Max247 package Datasheet — preliminary data Features Order code VDS STY50N105DK5 1050 V RDS on max ID PTOT 0.120 Ω 44 A 625 W • Worldwide best RDS(on)*area

STD40NF10

Abstract: D40NF
Contextual Info: STD40NF10 N-channel 100 V, 0.025 Ω, 50 A DPAK low gate charge STripFET II Power MOSFET Features Order code VDSS RDS on max. ID STD40NF10 100 V < 0.028 Ω 50 A • Exceptional dv/dt capability ■ Low gate charge ■ 100% avalanche tested 3 1 DPAK Application

45NF06

Contextual Info: STP45NF06 N-channel 60 V, 0.22 Ω typ., 38 A, STripFET II Power MOSFET in a TO-220 package Datasheet − production data Features • Order code VDS RDS on ID STP45NF06 60 V 0.028 Ω 38 A TAB Typical RDS(on) = 0.022 Ω ■ Exceptional dv/dt capability

STS3N95K3

Contextual Info: STS3N95K3 N-channel 950 V, 5 Ω, 0.4 A SO-8 Zener-protected SuperMESH3 Power MOSFET Preliminary data Features Order code VDSS RDS on max ID Pw STS3N95K3 950 V < 6.3 Ω 0.4 A 2W • 100% avalanche tested ■ Extremely large avalanche performance ■ Gate charge minimized

5DNF20V

Abstract: STS5DNF20V 5DNF
Contextual Info: STS5DNF20V N-channel 20 V, 0.030 Ω, 5 A SO-8 2.7 V, drive STripFET II Power MOSFET Features Order code VDSS RDS on max. ID STS5DNF20V 20 V < 0.040Ω @ 4.5 V < 0.045Ω @ 2.7 V 5A • Ultra low threshold gate drive (2.7 V) ■ Standard outline for easy automated surface

f10nk50z

Abstract: f10nk f10nk50 STF10NK F10N STF10NK50Z
Contextual Info: STF10NK50Z N-channel 500 V, 0.55 Ω, 9 A Zener-protected SuperMESH Power MOSFET in TO-220FP package Datasheet — production data Features Order code VDSS RDS on max ID PTOT STF10NK50Z 500 V < 0.7 Ω 9A 30 W • Extremely high dv/dt capability ■ 100% avalanche tested

W12NK90Z

Abstract: STW12NK90Z W12NK w12nk90 NC 9615
Contextual Info: STW12NK90Z N-channel 900 V, 0.72 Ω, 11 A TO-247 Zener-protected SuperMESH Power MOSFET Features Order code VDSS RDS on max STW12NK90Z 900 V < 0.88 Ω ID Pw 11 A 230 W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized

W20NK50

Abstract: w20nk50z W20NK50Z ST STW20NK50Z ST W20NK STW20NK50Z
Contextual Info: STW20NK50Z N-channel 500 V, 0.23 Ω, 20 A SuperMESH Power MOSFET Zener-protected in TO-247 package Datasheet — production data Features Order code VDSS RDS on max STW20NK50Z 500 V < 0.27 Ω • Extremely high dv/dt capability ■ 100% avalanche tested

STW26NM60-H

Abstract: W26NM60 stw26nm60h w26nm60 equivalent STW26NM60 18162 W26nm
Contextual Info: STW26NM60-H N-channel 600 V, 0.125 Ω, 30 A TO-247 MDmesh II Power MOSFET Features Order code VDSS RDS on max ID STW26NM60-H 600 V < 0.135 Ω 30 A • High dv/dt and avalanche capabilities ■ Low input capacitance and gate charge ■ Low gate input resistance

STP130N10F3

Abstract: 130N10F3 Part Marking TO-220 STMicroelectronics
Contextual Info: STP130N10F3 N-channel 100 V, 6.2 mΩ, 180 A STripFET Power MOSFET TO-220 Preliminary data Features Order codes VDSS RDS on max. ID STP130N10F3 100 V 8.4 mΩ 130 A • Ultra low on-resistance ■ 100% avalanche tested 3 1 Application 2 TO-220 High current switching applications

Contextual Info: STL23NS3LLH7 N-channel 30 V, 0.0027 Ω typ., 23 A STripFET VII DeepGATE™ Power MOSFET plus monolithic Schottky in a PowerFLAT™ 3.3 x 3.3 Datasheet - target specification Features Order code VDS RDS on max ID STL23NS3LLH7 30 V 0.0027 Ω 23 A • Very low on-resistance

12F30L

Abstract: A 6069 H 6069 marking STS12NF30L
Contextual Info: STS12NF30L N-channel 30 V, 0.008 Ω, 12 A STripFET II Power MOSFET in SO-8 package Datasheet — production data Features Order code VDSS RDS on ID STS12NF30L 30 V < 0.009 Ω 12 A 7 6 5 8 • Standard outline for easy automated surface mount assembly ■

stp110n10f7

Abstract: 110N10F7
Contextual Info: STP110N10F7 N-channel 100 V, 6 mΩ typ., 110 A, STripFET VII DeepGATE™ Power MOSFET in a TO-220 package Datasheet — preliminary data Features Order code VDSS RDS on max STP110N10F7 100 V 7 mΩ • Ultra low on-resistance ■ 100% avalanche tested PTOT

STI300N4F6

Contextual Info: STI300N4F6 N-channel 40 V, 1.4 mΩ, 160 A, I²PAK STripFET VI DeepGATE™ Power MOSFET Preliminary data Features Order code VDSS RDS on max. ID STI300N4F6 40 V 2.0 mΩ 160 A(1) 1. Limited by wire bonding • Standard level VGS(th) ■ 175 °C junction temperature

Contextual Info: STH260N6F6-2 N-channel 60 V, 0.0016 Ω, 180 A STripFET VI DeepGATE™ Power MOSFET in H²PAK-2 package Features Order code VDSS RDS on max ID STH260N6F6-2 60 V < 0.002 Ω 180 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness