DIODE TH 5 N Search Results

BA182

Abstract: tfk 4 SOD 23 TFK diode br351 SOD-23
Contextual Info: BA 182 Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Bereichsumschaltung in VHF-Tunern A p p lic a tio n s : Band se le cto r in VHF-tuners Abmessungen in mm D im en sio n s in mm 2 ,4 KATHODE 1 2 ,5 0 ,2 1,2 0 ,7 5 fdsHf CA TH OD E

T 4512 H diode

Abstract: ABB thyristor modules T 3512 H diode diode T 4512 H free of LA 4508 7508H diode T 3512 H V10-40 vez300 CLA 80 E 1200
Contextual Info: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

nec laser diode OTDR

Abstract: NEC LASER DIODE PIN DIP NDL5070 NDL5060 NDL5061 NDL5071 NDL5762P NDL5772P PULSED LASER DIODE
Contextual Info: N E C ELECTRONICS INC b2E J> m b427S2S GD37c1cib 131 « N E C E DATA SHEET NEC LASER DIODE MODULE NDL5772P ELECTRON DEVICE 1 5 5 0 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DC-PBH PULSED LASER DIODE MODULE DESCRIPTION N D L 5 77 2P is a 1 5 5 0 nm pulsed laser diode DIP m odule w ith singlem ode fib er and internal th erm o -electric cooler. It is

Thyristor ABB ys 150

Contextual Info: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

MI32T

Contextual Info: CRO INFRARED EMITTING DIODE 02.94 “ 0.116 DESCRIPTION r 5 .L M I32T is GaAlAs infrared emiitting diode m olded in 3mm MI32T diam eter > Th 1.02 J V S ') (0.04) 0.75(0.03)_j max. 1J u clear transparent lens. 0.5 (0.02)~~ •2.5(0.1) ABSOLUTE MAXIMUM RATINGS

1-GT-38

Abstract: Triangle Microwave Triangle Microwave attenuator 1-GT-10 KDI triangle 2-gt attenuator
Contextual Info: TEMPERATURE COMPENSATED, VOLTAGE CONTROLLED, ABSORPTIVE, CONTINUOUSLY VARIABLE ATTENUATORS, PIN DIODE 0.25-18 GHz SERIES 1-GT-TT/TR CI.12 5 / 0 3 2 0 01 A . TH RU 4 M T6 . H O LES -aio GENERAL INFORMATION: KDI/Triangle’s pin diode attenuators continuously change

IRKCL91-02S02

Abstract: IRKCL91-04S02 IRKDL71-06S02 IRKDL56-06S02 B40DL100S05 IRKJL91-04S02 B40CL10S02 B40CL20S02 B40CL40S02 B40CL60S02
Contextual Info: 4ÖS5MS5 0010737 ì • SbE D INTE RNATIONAL RECTI FIE R International ì »r |Rectifier T - 0 3 'û i Power Modules, Diode/Diode, Fast V RRM !F AV Tc 50Hz 60Hz Part number (6 ) (7) V FM (8 ) (V) V (2 ) (5) R th J C D C (3) Case Case Outline Notes (A) (°C)

IRKCL91-06S02

Abstract: ior e78996 158lf B40DL100S05 IRKJL91-02S02 E78996 ior fm50h 1406 diode 1RKC IRKCL91-04S02
Contextual Info: Power Modules International IOR' R e c tifie r Diode/Diode, Fast lF A V @ T c Part Nu m be r (7) (8) (V) V FM 50 H z Vr rm (6) >FS M d > (A) (°C ) (A) 60 H z (A) (2) (V) trr (5) (ns) A th JC DC (°C/W ) B40DL10S02 B40DL20S02 B40DL40S02 B40DL60S02 B40CL10S02

J533

Abstract: 5KV fast recovery DIODE
Contextual Info: Super Fast Recovery Diode Single Diode Wtm D3L60 OUTLINE 600V 3A Feature • rüIitEEFRD • High V oltage S u p er FRD • trr=50ns • trr= 5 0 n s • Z> lÆ -JU K • Full M o ld e d • « lIÎ E 1 .5 k V « |Œ • D ielectric S tre n g th 1,5kV • PFC

W3100

Abstract: DIODE REDRESSEMENT T-25-23 ABB thyristor modules k4101 K21-0120A Diodes de redressement
Contextual Info: A S E A BROUN/ABB “ñ3 SEMICON Netz-Thyristor-Diode-Module iT | □□4ñ30ñ □□□Dns 2 1 ~ -^ -_ 2 5 -2 3 Phase control Thyristor-Diode-Modules D aten pro D iode Oder T h y ris to r/d a ta p e r d io d e o r th y r is to r /ie s ca racté ristiq u es se ra p p o rte n t à 1 d io d e ou à 1 th y ris to r

IR E78996

Abstract: E78996 rectifier module E78996 Diode E78996 E78996 IR IRKH136-16D25 14D20 IR E78996 135 KL23014
Contextual Info: International H ]Rectifier Power Modules Thyristor with high voltage diode Voltage Range lT A V @ T c i f (a v (1) (2) (3) (4) Diode •TSM' >FSM (5) R th JC DC ) (3) (4) Thyristor (V) (V) (A) (°C ) 50 H z (A) IRKH136-14D20 IRKH136-16D25 IRKL136-14D20

SOT23 M

Abstract: 100S BAS31 MA840 GENERAL PURPOSE DIODE
Contextual Info: BAS31 9 D iscrete POWER & S ign al Technologies National Semiconductor" BAS31 M CONNECTION DIAGRAM SOT-23 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* T A = 2 5 ° C unless o th e rw ise noted Parameter Symbol Value

1SS315

Contextual Info: TOSHIBA 1SS315 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS31 5 UHF BAND MIXER APPLICATIONS. U n i t in m m + 0.2 1.2 5 - 0 . il 0*tH ÖÖ i +I 0 ± 0.05 M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current

Contextual Info: MICRO jaUALITY / S E M IC O N D U C T O R , INC. Fast Recovery High Voltage Power Rectifier Subassembly Diode H850 Th e H 8 5 0 subassem bly diode is designed for use in the buildup of high voltage power rectifier assem blies. Total assem bly cost is greatly reduced by the use of diodes with

f8l60

Abstract: f8l60usm SF8L60USM 2kv diode fly wheel diode marking code 58 f8l6
Contextual Info: Super Fast Recovery Diode Single Diode W tm SF8L60USM OUTLINE 60 0V 8A Feature • m s 'ix • • L o w N oise tr r = 2 5 n s • trr= 2 5 n s • 71 [Æ - J U K • Full M o ld e d • « I M E 2kVSEE • D ie le ctric S tre n g th 2kV Main Use • T.'i

Contextual Info: S iM IC3QMPUCTQ R MMBD914 CONNECTION DIAGRAM SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1 P. See 1N4148 for characteristics. Absolute Maximum Ratings4 Symbol T A = 2 5°C unless o th e rw ise noted Parameter Value Units W IV Working Inverse Voltage

Contextual Info: S iM IC3QMPUCTQ R BAW56 CONNECTION DIAGRAMS SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings4 Symbol T A = 2 5°C unless o th e rw ise noted Parameter Value Units W IV Working Inverse Voltage

1SS314

Contextual Info: 1SS314 TOSHIBA 1 SS31 4 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE VHF TUNER BAND SWITCH APPLICATIONS. • Small Package. • Small Total Capacitance : Cx = 1.2pF Max. • Low Series Resistance : rs = 0.50 (Typ.) U nit in mm + 0.2 1.2 5 - 0 . il 0*tH ÖÖ

baw56 sot-23

Abstract: BAV99 BAW56
Contextual Info: BAW56 Discrete POWER & Signal Technologies 9 National Semiconductor" BAW56 CONNECTION 1H SOT-23 13 * 1 DIAGRAMS ET High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* T A = 2 5 ° C unless o th e rw ise noted

IN5288

Abstract: IN5305 IN5309 diode 0107MA IN5309 1N5298 equivalent CNS 022 1N5305 equivalent 1N5286 IN5283
Contextual Info: Microsemi Corp. J T he diode exp erts j SANTA ANA, CA SCOTTSDALE, AZ For more information call: 602 941-6300 / IVI*5 28 3 th ru M *5314 a n d C f5 2 8 3 th ru C f5 3 1 4 HIGH RELIABILITY CURRENT REGULATOR DIODES Features (* ) • A va ila b le as screen ed e q u iva le n ts using p refixes n oted b elo w :

Contextual Info: D S7830/8830-F.N DESCRIPTION FEATURES The DS7830/DS8830 is a dual d iffe re n tia l line d riv e r th a t also pe rform s th e dual fo u rin p u t N A N D o r dual fo u r-in p u t AN D fu n c tio n . • Single 5 volt power supply • High speed • Diode protected outputs for termination

Contextual Info: Schottky Barrier Diode Twin Diode W tm SF10SC6 60V OUTLINE DA Feature • Tj=150°C • T j= 1 5 0°C • PRRSM T ’A ' ^ V Î ' I ' K i E • P rrsm • 7 1 Rating • Full M o ld e d [Æ -J U K • « lf f it E 1 . 5 k V « E • D ie le ctric S tre n g th 1 ,5kV

smd DIODE code marking kA

Abstract: smd diode schottky code marking 2F kl 60 smd schottky diode s3 SMD RNA j53z SMD diode KL smd diode HB
Contextual Info: Schottky Barrier Diode wnnw OUTLINE Single Diode D3FS6 U nit I mm Package : 2F Weight 0.16« Typ •hy —K v - ? ' C a th o d e m a i 60V 3A Feature • /> 3 !iS M D • P rrs m T ’A - S V î ' i Æ ü I • P rrsm 5 i - B ■ • Small SMD k <J>°—

Contextual Info: • . I Bulletin 127093 rev. A 09/97 In te rn a tio n a l I R Rectifier i r k FAST THYRISTOR/ DIODE and . f i 5 2 . s e r i e s INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 150 A ■ Fast tu rn -o ff th yristo r ■ Fast recovery diode ■ High surge capability