DIODE TH 5 N Search Results

BA182

Abstract: tfk 4 SOD 23 TFK diode br351 SOD-23
Contextual Info: BA 182 Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Bereichsumschaltung in VHF-Tunern A p p lic a tio n s : Band se le cto r in VHF-tuners Abmessungen in mm D im en sio n s in mm 2 ,4 KATHODE 1 2 ,5 0 ,2 1,2 0 ,7 5 fdsHf CA TH OD E

Thyristor ABB ys 150

Contextual Info: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

1SS315

Contextual Info: TOSHIBA 1SS315 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS31 5 UHF BAND MIXER APPLICATIONS. U n i t in m m + 0.2 1.2 5 - 0 . il 0*tH ÖÖ i +I 0 ± 0.05 M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current

Contextual Info: n ^EGsG RETICON TH Series Solid State Scanners General Description [ — I 22 ] Start Temp. Diode 1 [ 2 21 ] 01 Antiblooming Drain [ 3 20 V DDG £ 4 19 ] N/C [ 5 18 ] N/C v Sub t 6 17 ' v Sub N/C I Reset Gate Temp Diode 2 Active Video 7 16 N/C E 8 15 ] End-Of*Scan Enable

Contextual Info: S iM IC3QMPUCTQ R MMBD914 CONNECTION DIAGRAM SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1 P. See 1N4148 for characteristics. Absolute Maximum Ratings4 Symbol T A = 2 5°C unless o th e rw ise noted Parameter Value Units W IV Working Inverse Voltage

Contextual Info: S iM IC3QMPUCTQ R BAW56 CONNECTION DIAGRAMS SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings4 Symbol T A = 2 5°C unless o th e rw ise noted Parameter Value Units W IV Working Inverse Voltage

1SS314

Contextual Info: 1SS314 TOSHIBA 1 SS31 4 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE VHF TUNER BAND SWITCH APPLICATIONS. • Small Package. • Small Total Capacitance : Cx = 1.2pF Max. • Low Series Resistance : rs = 0.50 (Typ.) U nit in mm + 0.2 1.2 5 - 0 . il 0*tH ÖÖ

IN5288

Abstract: IN5305 IN5309 diode 0107MA IN5309 1N5298 equivalent CNS 022 1N5305 equivalent 1N5286 IN5283
Contextual Info: Microsemi Corp. J T he diode exp erts j SANTA ANA, CA SCOTTSDALE, AZ For more information call: 602 941-6300 / IVI*5 28 3 th ru M *5314 a n d C f5 2 8 3 th ru C f5 3 1 4 HIGH RELIABILITY CURRENT REGULATOR DIODES Features (* ) • A va ila b le as screen ed e q u iva le n ts using p refixes n oted b elo w :

Contextual Info: D S7830/8830-F.N DESCRIPTION FEATURES The DS7830/DS8830 is a dual d iffe re n tia l line d riv e r th a t also pe rform s th e dual fo u rin p u t N A N D o r dual fo u r-in p u t AN D fu n c tio n . • Single 5 volt power supply • High speed • Diode protected outputs for termination

Contextual Info: Schottky Barrier Diode Twin Diode W tm SF10SC6 60V OUTLINE DA Feature • Tj=150°C • T j= 1 5 0°C • PRRSM T ’A ' ^ V Î ' I ' K i E • P rrsm • 7 1 Rating • Full M o ld e d [Æ -J U K • « lf f it E 1 . 5 k V « E • D ie le ctric S tre n g th 1 ,5kV

smd DIODE code marking kA

Abstract: smd diode schottky code marking 2F kl 60 smd schottky diode s3 SMD RNA j53z SMD diode KL smd diode HB
Contextual Info: Schottky Barrier Diode wnnw OUTLINE Single Diode D3FS6 U nit I mm Package : 2F Weight 0.16« Typ •hy —K v - ? ' C a th o d e m a i 60V 3A Feature • /> 3 !iS M D • P rrs m T ’A - S V î ' i Æ ü I • P rrsm 5 i - B ■ • Small SMD k <J>°—

Contextual Info: • . I Bulletin 127093 rev. A 09/97 In te rn a tio n a l I R Rectifier i r k FAST THYRISTOR/ DIODE and . f i 5 2 . s e r i e s INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 150 A ■ Fast tu rn -o ff th yristo r ■ Fast recovery diode ■ High surge capability

BD1201

Contextual Info: BE :?VlICON D U C 'TP R MMBD7000 CONNECTION DIAGRAM SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. See M M BD1201-1205 for characteristics. Absolute Maximum Ratings4 Symbol T A = 2 5°C unless o th e rw ise noted Parameter Value Units W IV

in5349b

Abstract: IN5339B IN5378B IN5343b in5364B in5378b ZENER DIODE IN5358B IN5378 IN5339B diode IN5357B
Contextual Info: ITTIMK-J 1N5333B Microsemi Corp. 1N5388B th ru SILICON 5 WATT ZENER DIODE FEATURES • ZENER VOLTAGE 3.3V to 200V • HIGH SURGE CURRENT C A P A B IL IT Y • AVAILABLE IN ± 5, ± 10 or ± 2 0 % TOLERANCES Note 1 MAXIMUM RATINGS O perating T em perature: —65°C to + 2 0 0 °C

DIODE 2FL 20U

Abstract: 2FL 20U
Contextual Info: Super Fast Recovery Diode Single Diode OUTLINE D2FL20U Unit.: mm Package : 2F Weight 0.16jf T yp a y —K v —» 2 0 0 V 1 ,5A ! Feature • /JvSÜSMD • S m all S M D •e y - fx • Low N o ise • trr~35ns • trr-3 5 n s 1 2FL 20U C a th o d e m a rk

Contextual Info: M B R 7 5 0 2 0 R @ TH R U DACO SEMICONDUCTOR CO, LTD. M B R 7 5 1 0 0 (R ) SCHOTTKY DIODE MODULE TYPES 75A Features 75Amp Rectifier High Surge Capability Types Up to 100 V V rrm 20-100 Volts D O - 5 (DO -203AB) Maximum Ratings Operating Temperature: -55 C to +150°C

9V bridge rectifier ic

Abstract: 60-16NO1 ixys vub 70 -16
Contextual Info: VUB 60 VRRM = 1200-1600 V IdAVM = 70 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM 1 2 Type 4 5 V 1200 1600 VUB 60-12 NO1 VUB 60-16 NO1 6 7 Test Conditions VRRM IdAV IdAVM TH = 110°C, sinusoidal 120° limited by leads

marking code TY SMD

Abstract: SMD MARKING CODE vk smd diode code TY smd code marking vk SMD MARKING XL jj smd smd schottky diode s3 MARKING SMD xl smd diode marking code JJ smd marking code fj
Contextual Info: Schottky Barrier Diode Single Diode w nnw OUTLINE Package : 2F D3FJ10 U nit I mm Weight 0.16# T yp Feature • • /J v g a s M D • S m all S M D • I r = 0.4mA • L o w lR=0.4m A 3FJ C a th o d e m a r k 100V 3A OÛ y—CO , G)°— 5 M — °(D

marking BSJ

Contextual Info: Schottky Barrier Diode Twin Diode Wtm SF20JC6 OUTLINE 60V 20A Feature • Tj=150°C • T j= 1 5 0°C • • Full M o ld e d 7 [Æ - JU K • fîlR=0.7mA • L ow lR=0.7mA • if& flÆ S Ê ê C U C C U • R esista n ce fo r th e rm a l ru n -a w a y

Contextual Info: VUB 60 VRRM = 1200-1600 V IdAVM = 70 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM 1 2 Type 4 5 V 1200 1600 VUB 60-12 NO1 VUB 60-16 NO1 6 7 Test Conditions VRRM IdAV IdAVM TH = 110°C, sinusoidal 120° limited by leads

51-12NO1

Abstract: vub 70
Contextual Info: VUB 51 VRRM = 1200-1600 V IdAV = 51 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary data VRRM 1 2 Type 4 5 V VUB 51-12 NO1 VUB 51-16 NO1 6 7 Test Conditions VRRM IdAV IdAVM TH = 110°C, sinusoidal 120° limited by leads

Diode LT 442

Contextual Info: U ^yP -P z m t -K U tipe Super Fast Recovery Diode W l Single Diode • M 2 tH£E] D10L20U OUTLINE DIMENSIONS C ase : ITO -220 2 0 0 V 10 A n m •t r r 3 5 n s • y J L Æ -J L /K m s •S R ® m y u -T t^ iis • m m . OA. H8BJ1 •ilia * m m ti& m fa

Contextual Info: VN10KC Vishay Siliconix New Product N-Channel 60-V D-S MOSFET , VA PRODUCT SUMMARY V (BR)DSS M in (V) *DS(on) M a x (£2) VGS(th )(V ) Id (A) 60 5 e v GS = io v 0.8 to 2.5 0.31 FEATURES BENEFITS APPLICATIONS • • Zener Diode Input Protected Low O n-Resistance: 3 Q

Contextual Info: S S M ÎC O N D Ü O T O H 1N4454 DO-35 High Conductance Ultra Fast Diode Sourced from Process 1R. See M M BD1201-1205 for characteristics. Absolute Màximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted Parameter Value Units 50 V Average Rectified Current