DIODE TFK S Search Results

NI3T

Abstract: te tfk TFK 03 Diode TFK U 111 B A211-1 a1ae 2SK1020 equivalent
Contextual Info: 2SK1020 F U JI PO W ER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-II SERIES • Features lOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage •Voss —± 30V Guarantee ■Applications

cv 1924

Abstract: HM-TR F760 ERC80-004 T151 T460 T810 T930 VU48
Contextual Info: ERC80-004 5A '> 3 SCHOTTKY BARRIER DIODE I Features • ttV F Low V F Super high speed switching. Connection Diagram High reliability by planer design. • ElSs I Applications High speed power switching. Maximum Ratings and Characteristics • £ * * * * $ * * : Absolute Maximum Ratings

Contextual Info: [Z T ^ 7 #. SCS-THOMSON L9946 R{flö [^ Q [l[Ul©TFK ROD©i MULTIPLE HALF BRIDGE DRIVER ADVANCE DATA • ■ ■ ■ ■ 4.75A TOTAL OUTPUT CURRENT VERY LOW CONSUMPTION IN OFF STATE OVERLOAD DIAGNOSTIC OPEN LOAD DIAGNOSTIC GROUNDED CASE DESCRIPTION The L9946 device Is a quad half bridge plus an

sega mega drive

Abstract: phct sega mega drive RF IRH7230 IRH8230
Contextual Info: Data Sheet No. PD-9.678A INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED IRH7S30 HEXFET TRANSISTORS Q „ IRH8S30 N-CHANNEL MEGA RAD HARD 200 Volt, 0.400, MEGA RAD HARD HEXFET International Rectifier's MEGA RAD HARD Technology HEXFETk demonstrate excellent threshold voltage stability and breakdown

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY