DIODE TD3 Search Results
DIODE TD3 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE TD3 Datasheets Context Search
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Contextual Info: Photo Diode Product No: M TD3610D3 Peak Sensitivity Wavelength: 940nm The MTD3610D3 is a photo diode in a water-clear 3mm plastic molded package. It is well suited for high reliability and high sensitivity applications. Custom package solutions and sorting are available. |
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td3610d3940nmmtd3610d3 | |
33gy7
Abstract: 33gy7a 33GY7-A td324 diode td3 T0324 h 48 diode Scans-0017401 general electric
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33gy7-a33gy733gy7atd324+5 | |
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Contextual Info: Photo Diode Product No: M TD3010PM Peak Sensitivity Wavelength: 900nm The MTD3010PM is a photo diode in a TO-18 low profile metal can domed package. It is well suited for high reliability and high speed applications. FEATURES APPLICATIONS > Linearity of Ee vs IL |
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td3010pm900nmmtd3010pm | |
semiconductor
Abstract: hirect H507CH Hirect diode H400TB
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semiconductorhirect h507chhirect diodeh400tb | |
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Contextual Info: Photo Diode Product No: M TD3 0 1 0 P M Peak Sensitivity Wavelength: 900nm The MTD3010PM is a photo diode in a TO-18 low proile metal can domed package. It is well suited for high reliability and high speed applications. F EATU RES AP P L IC ATIO N S > Linearity of Ee vs IL |
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900nmmtd3010pm125ktechopto | |
7z66b
Abstract: BAX18 diode td3 general purpose diode
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2b372bax18do-35od-27+6 | |
VICTOREEN
Abstract: TV 106-2 3dj3 general electric
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victoreentv 106-23dj3general electric | |
TD180N
Abstract: eupec igbt eupec scr EUPEC TD162N kuka-2003-inhalt.qxd TD170N EUPEC Thyristor TD150N TD162N TD122N
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kuka-2003-inhalttd240ntd70ntd375n+14 | |
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Contextual Info: N AUER PHILIPS/DISCRETE bbSB'iai DD2b372 2T4 BAX18 l b'BE D IAPX GENERAL PURPOSE DIODE General purpose diode in a DO-35 in envelope primarily intended for rectifier applications Q U IC K R E F E R E N C E D A T A V RRM max. 75 V Average forward current Repetitive peak reverse voltage |
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dd2b372bax18do-3500sb375 | |
thyristor
Abstract: TD104N TD180N SCR Control SCR Phase Control TD121N TD170N TD106N datasheet of thyristor TD250N POWERBLOCK
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td240ntd70ntd385ntd122n+16 | |
TD3160Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 TD3160 Solar Array Bypass Diode Features • • • • • • Ultra Thin Construction Low leakage reverse current Low forward voltage drop Die metallization is solderable or weldable |
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td3160300msmsc1044 | |
testing diode
Abstract: TD3167 MSC1050
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td3167300msmsc1050testing diode | |
Diode C 30 PH
Abstract: MSC1046 TD3162
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td3162300ms300ocmsc1046+1 | |
TD3166
Abstract: MSC1049 solar blocking diode
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td3166300msmsc1049solar blocking diode | |
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TD3165Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 TD3165 Solar Array Blocking Diode Features • • • • • • Very Thin Construction Passivated mesa structure for very low leakage reverse currents Epitaxial structure minimizes forward voltage drop |
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td3165300msmsc1048 | |
TVR diode
Abstract: solar cell MSC1051 TD3168
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td3168300msmsc1051tvr diode+1 | |
jedec E12-70
Abstract: E12-70 5SB1 Scans-0017382 general electric VICTOREEN 440
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k-5sb11-td30b-jedec e12-70e12-705sb1+3 | |
TD3161Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 Capabilities Data Sheet TD3161 Solar Array Bypass Diode Features • • • • • • • Ultra Thin Construction Co-planar design; N and P contacts on topside Low leakage reverse current |
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td3161300msmsc1045 | |
TD3163
Abstract: MSC1047
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td3163300ms750erablemsc1047 | |
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Contextual Info: TD3907592 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage12 @I(Z) (A) (Test Condition)20m Tolerance (%)5 P(D) Max. (W)500m Z(z) Max. (ê) Dyn. Imped.10 Temp Coef pp/10k6.0 Maximum Operating Temp (øC)175’ |
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td3907592voltage12pp/10k6styledo-34 | |
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Contextual Info: TD3909692 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage22 @I(Z) (A) (Test Condition)5.6m Tolerance (%)5 P(D) Max. (W)500m Z(z) Max. (ê) Dyn. Imped.29 Temp Coef pp/10k8.0 Maximum Operating Temp (øC)175’ |
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td3909692voltage22pp/10k8styledo-34 | |
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Contextual Info: TD3907582 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage10 @I(Z) (A) (Test Condition)20m Tolerance (%)5 P(D) Max. (W)500m Z(z) Max. (ê) Dyn. Imped.7.0 Temp Coef pp/10k6.0 Maximum Operating Temp (øC)175’ |
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td3907582voltage10pp/10k6styledo-34 | |
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Contextual Info: TD3909732 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage33 @I(Z) (A) (Test Condition)3.8m Tolerance (%)5 P(D) Max. (W)500m Z(z) Max. (ê) Dyn. Imped.58 Temp Coef pp/10k8.5 Maximum Operating Temp (øC)175’ |
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td3909732voltage33pp/10k8styledo-34 | |
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Contextual Info: TD3909662 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage16 @I(Z) (A) (Test Condition)7.8m Tolerance (%)5 P(D) Max. (W)500m Z(z) Max. (ê) Dyn. Imped.17 Temp Coef pp/10k8.3 Maximum Operating Temp (øC)175’ |
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td3909662voltage16pp/10k8styledo-34 | |