DIODE SYMBOL A1 Search Results
DIODE SYMBOL A1 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
| CUZ24V |
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Zener Diode, 24 V, USC | Datasheet | ||
| CUZ16V |
|
Zener Diode, 16 V, USC | Datasheet |
DIODE SYMBOL A1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
BAV70LT1
Abstract: BAV70LT1G BAV70LT3 BAV70LT3G
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BAV70LT1 OT-23 O-236) 25laws BAV70LT1/D BAV70LT1 BAV70LT1G BAV70LT3 BAV70LT3G | |
MMBD6100LT1
Abstract: MMBD6100LT1G MMBD6100LT3 MMBD6100LT3G
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MMBD6100LT1 MMBD6100LT1 MMBD6100LT1G MMBD6100LT3 MMBD6100LT3G | |
MMBD6100LT1
Abstract: MMBD6100LT1G MMBD6100LT3 MMBD6100LT3G
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MMBD6100LT1 MMBD6100LT1/D MMBD6100LT1 MMBD6100LT1G MMBD6100LT3 MMBD6100LT3G | |
BAW56LT1
Abstract: BAW56LT1G BAW56LT3 BAW56LT3G
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BAW56LT1 OT-23 O-236) BAW56LT1/D BAW56LT1 BAW56LT1G BAW56LT3 BAW56LT3G | |
BAV74LT1G
Abstract: BAV74LT1 BAV74LT3 BAV74LT3G
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BAV74LT1 OT-23 BAV74LT1/D BAV74LT1G BAV74LT1 BAV74LT3 BAV74LT3G | |
BAV74LT1
Abstract: BAV74LT1G BAV74LT3 BAV74LT3G Diode marking CODE 5M
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BAV74LT1 OT-23 BAV74LT1 BAV74LT1G BAV74LT3 BAV74LT3G Diode marking CODE 5M | |
A1030 transistor
Abstract: Q62702-A1030 marking code a4s
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Q62702-A1030 OT-323 Nov-28-1996 A1030 transistor Q62702-A1030 marking code a4s | |
SC82Contextual Info: 1SS383T1 Preferred Device Dual Schottky Diode MAXIMUM RATINGS TA = 25°C Symbol Max Unit Continuous Reverse Voltage VR 40 V Maximum Peak Forward Current* IFM 300 mA IFM(surge) 500 mA 4 3 Symbol Max Unit 1 2 Symbol Max Unit PD 200 (Note 1) 1.6 (Note 1) mW |
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1SS383T1 SC-82 1SS383T1 SC-82 3000/Tape 1SS383T1/D SC82 | |
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Contextual Info: SIEMENS BAS 16-03W Silicon Switching Diode Preliminary data • For high-speed switching applications Type Marking Ordering Code Pin Configuration Package BAS 16-03W B Q62702-A1231 1=A SOD-323 2=C Maximum Ratings Symbol Parameter Value 75 Diode reverse voltage |
OCR Scan |
6-03W Q62702-A1231 OD-323 100ns, | |
A1s sot23
Abstract: SOT-23 marking a1s Q62702-A688 MARKING CODE SOT23 A1S a1s, sot-23 sot23 a1s A1S diode
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Q62702-A688 OT-23 A1s sot23 SOT-23 marking a1s Q62702-A688 MARKING CODE SOT23 A1S a1s, sot-23 sot23 a1s A1S diode | |
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Contextual Info: SIEMENS BAS 28W Silicon Switching Diode Array For high-speed switching applications Electrical insulated diodes Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 =C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings Symbol Diode reverse voltage |
OCR Scan |
Q62702-A3466 OT-343 EHN00019 100ns, | |
BAS19LT1G
Abstract: BAS21LT1 BAS19 BAS19LT1 BAS19LT3 BAS20 BAS20LT1 BAS21 BAS21DW5T1 On semiconductor date Code sot-23
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BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 BAS19 BAS20 BAS21 BAS19LT1G BAS21LT1 BAS19 BAS19LT1 BAS19LT3 BAS20 BAS20LT1 BAS21 BAS21DW5T1 On semiconductor date Code sot-23 | |
BAV70Contextual Info: BAV70 Silicon Switching Diode Array 3 For high-speed switching applications Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV70 A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage |
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BAV70 VPS05161 EHA07004 EHB00066 EHB00067 Jul-31-2001 EHB00068 BAV70 | |
BAV99
Abstract: free pdf transistor a7s bav99 marking diode bav A2 SOT23
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BAV99 VPS05161 EHA07005 EHB00076 EHB00077 Jul-30-2001 EHB00078 BAV99 free pdf transistor a7s bav99 marking diode bav A2 SOT23 | |
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SC-88A footprint
Abstract: BAS19LT1G JX SOT23 SOT23 Marking JX sot-23 Marking do hM sot-353 marking 04 sot-23 marking 25 SOT-23 ref marking cd sc-88a BAS19LT3G
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BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 BAS19 BAS20 BAS21 SC-88A footprint BAS19LT1G JX SOT23 SOT23 Marking JX sot-23 Marking do hM sot-353 marking 04 sot-23 marking 25 SOT-23 ref marking cd sc-88a BAS19LT3G | |
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Contextual Info: Philips Semiconductors Product specification Silicon planar epitaxial high-speed double diode FEATURES • Plastic SMD envelope • High switching speed • General application. BAW56W QUICK REFERENCE DATA SYMBOL CONDITIONS MAX. UNIT Per diode Vr continuous reverse |
OCR Scan |
BAW56W | |
450KWContextual Info: BAT 63 Silicon Schottky Diode ● Low barrier diode for mixer and detectors up to GHz frequencies Type BAT 63 Ordering Code tape and reel 1 Q62702-A1004 A1 Pin Configuration 2 3 4 C2 A2 C1 Marking Package 63 SOT-143 Maximum Ratings Parameter Symbol Values |
Original |
Q62702-A1004 OT-143 450KW | |
A1 SOT143
Abstract: VPS05178 BAW101 EHA07008
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BAW101 VPS05178 EHA07008 OT143 EHN00019 Aug-20-2001 EHB00104 EHB00103 A1 SOT143 VPS05178 BAW101 EHA07008 | |
diode marking 74
Abstract: BAV74
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VPS05161 EHA07004 OT-23 EHB00071 EHB00072 Oct-11-1999 EHB00073 diode marking 74 BAV74 | |
BAV70
Abstract: SOT-23 marking A4s A4S SOT-23
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VPS05161 EHA07004 OT-23 EHB00066 EHB00067 Oct-07-1999 EHB00068 BAV70 SOT-23 marking A4s A4S SOT-23 | |
fast recovery diode 54
Abstract: BYC10-600CT BYC5-600 BYV29
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BYC10-600CT O220AB) BYC10-600CT fast recovery diode 54 BYC5-600 BYV29 | |
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Contextual Info: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10-600CT SYMBOL • Dual diode • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET |
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BYC10-600CT O220AB) BYC10-600CT | |
BAW56TT1
Abstract: SMD310
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BAW56TT1 r14525 BAW56TT1/D BAW56TT1 SMD310 | |
BAW56TT1
Abstract: BAW56TT1G
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BAW56TT1 BAW56TT1/D BAW56TT1 BAW56TT1G | |