DIODE SYMBOL A1 Search Results
DIODE SYMBOL A1 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
CEZ6V2 |
![]() |
Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
![]() |
Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ12V |
![]() |
Zener Diode, 12 V, USC | Datasheet | ||
MUZ5V6 |
![]() |
Zener Diode, 5.6 V, USM | Datasheet | ||
CEZ6V8 |
![]() |
Zener Diode, 6.8 V, ESC | Datasheet |
DIODE SYMBOL A1 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
BAV70LT1
Abstract: BAV70LT1G BAV70LT3 BAV70LT3G
|
Original |
BAV70LT1 OT-23 O-236) 25laws BAV70LT1/D BAV70LT1 BAV70LT1G BAV70LT3 BAV70LT3G | |
MMBD6100LT1
Abstract: MMBD6100LT1G MMBD6100LT3 MMBD6100LT3G
|
Original |
MMBD6100LT1 MMBD6100LT1 MMBD6100LT1G MMBD6100LT3 MMBD6100LT3G | |
MMBD6100LT1
Abstract: MMBD6100LT1G MMBD6100LT3 MMBD6100LT3G
|
Original |
MMBD6100LT1 MMBD6100LT1/D MMBD6100LT1 MMBD6100LT1G MMBD6100LT3 MMBD6100LT3G | |
BAW56LT1
Abstract: BAW56LT1G BAW56LT3 BAW56LT3G
|
Original |
BAW56LT1 OT-23 O-236) BAW56LT1/D BAW56LT1 BAW56LT1G BAW56LT3 BAW56LT3G | |
BAV74LT1G
Abstract: BAV74LT1 BAV74LT3 BAV74LT3G
|
Original |
BAV74LT1 OT-23 BAV74LT1/D BAV74LT1G BAV74LT1 BAV74LT3 BAV74LT3G | |
TO236 footprint
Abstract: BAW56LT1 BAW56LT1G BAW56LT3 BAW56LT3G 556 square wave generator
|
Original |
BAW56LT1 OT-23 O-236) TO236 footprint BAW56LT1 BAW56LT1G BAW56LT3 BAW56LT3G 556 square wave generator | |
BAV74LT1
Abstract: BAV74LT1G BAV74LT3 BAV74LT3G Diode marking CODE 5M
|
Original |
BAV74LT1 OT-23 BAV74LT1 BAV74LT1G BAV74LT3 BAV74LT3G Diode marking CODE 5M | |
BAV70LT1
Abstract: BAV70LT1G BAV70LT3 BAV70LT3G Diode marking CODE 5M
|
Original |
BAV70LT1 OT-23 O-236) BAV70LT1 BAV70LT1G BAV70LT3 BAV70LT3G Diode marking CODE 5M | |
Q62702-A1031
Abstract: marking code AC sot 323 diode
|
Original |
Q62702-A1031 OT-323 Nov-28-1996 Q62702-A1031 marking code AC sot 323 diode | |
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BYC10-600CT Dual rectifier diode ultrafast, low switching loss Product specification March 2001 NXP Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10-600CT SYMBOL • Dual diode |
Original |
BYC10-600CT BYC10-600CT O220AB) | |
A1030 transistor
Abstract: Q62702-A1030 marking code a4s
|
Original |
Q62702-A1030 OT-323 Nov-28-1996 A1030 transistor Q62702-A1030 marking code a4s | |
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BYC10-600CT Dual rectifier diode ultrafast, low switching loss Product specification March 2001 NXP Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10-600CT SYMBOL • Dual diode |
Original |
BYC10-600CT O220AB) | |
Contextual Info: SIEMENS BAV 70S Silicon Switching Diode Array Type Marking Ordering Gode BAV 70S A4s Pin Configuration Q62702-A1097 1/4=A1 2/5=A2 Package 3/6=C1/2 SOT-363 Maximum Ratings per Diode Symbol Parameter Values 70 Diode reverse voltage Peak reverse voltage Forward current |
OCR Scan |
Q62702-A1097 OT-363 40mmm 535bQ5 aH35fc | |
Q62702-A1051
Abstract: A7S marking code A1051 Q62702A1051
|
Original |
Q62702-A1051 OT-323 Apr-03-1997 Q62702-A1051 A7S marking code A1051 Q62702A1051 | |
|
|||
"MARKING DIAGRAM"
Abstract: 1SS383T1
|
Original |
1SS383T1 1SS383T1/D "MARKING DIAGRAM" 1SS383T1 | |
SC82Contextual Info: 1SS383T1 Preferred Device Dual Schottky Diode MAXIMUM RATINGS TA = 25°C Symbol Max Unit Continuous Reverse Voltage VR 40 V Maximum Peak Forward Current* IFM 300 mA IFM(surge) 500 mA 4 3 Symbol Max Unit 1 2 Symbol Max Unit PD 200 (Note 1) 1.6 (Note 1) mW |
Original |
1SS383T1 SC-82 1SS383T1 SC-82 3000/Tape 1SS383T1/D SC82 | |
Contextual Info: SIEMENS BAS 16-03W Silicon Switching Diode Preliminary data • For high-speed switching applications Type Marking Ordering Code Pin Configuration Package BAS 16-03W B Q62702-A1231 1=A SOD-323 2=C Maximum Ratings Symbol Parameter Value 75 Diode reverse voltage |
OCR Scan |
6-03W Q62702-A1231 OD-323 100ns, | |
A1s sot23
Abstract: SOT-23 marking a1s Q62702-A688 MARKING CODE SOT23 A1S a1s, sot-23 sot23 a1s A1S diode
|
Original |
Q62702-A688 OT-23 A1s sot23 SOT-23 marking a1s Q62702-A688 MARKING CODE SOT23 A1S a1s, sot-23 sot23 a1s A1S diode | |
A1S diode
Abstract: A1s sot23 a1s sot-23 diode a1s SOT-23 marking a1s a1s package Q62702-A688 transistor A688 a1s, sot-23 SOT 23 A1S
|
Original |
Q62702-A688 OT-23 A1S diode A1s sot23 a1s sot-23 diode a1s SOT-23 marking a1s a1s package Q62702-A688 transistor A688 a1s, sot-23 SOT 23 A1S | |
Q62702-A1050
Abstract: a6s marking A1050 A6s DIODE diode A6s
|
Original |
Q62702-A1050 OT-323 40mmm Nov-28-1996 Q62702-A1050 a6s marking A1050 A6s DIODE diode A6s | |
Contextual Info: SIEMENS BAS 28W Silicon Switching Diode Array For high-speed switching applications Electrical insulated diodes Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 =C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings Symbol Diode reverse voltage |
OCR Scan |
Q62702-A3466 OT-343 EHN00019 100ns, | |
Contextual Info: SIEMENS BAS 16-03W Silicon Switching Diode Preliminary data • For high-speed switching applications Type Marking Ordering Code Pin Configuration Package BAS 16-03W B Q62702-A1231 1=A SOD-323 2=C Maximum Ratings Parameter Symbol Diode reverse voltage Vr 75 |
OCR Scan |
6-03W Q62702-A1231 OD-323 100ns, | |
diode a4s
Abstract: marking code fs 1 sot 323 A4s diode
|
OCR Scan |
Q62702-A1030 OT-323 40mmm diode a4s marking code fs 1 sot 323 A4s diode | |
marking E7BContextual Info: SIEMENS BAW56 Silicon Switching Diode Array • For high-speed switching applications • Common anode Type Marking Ordering Code tape and reel B A W 56 A1s Q62702-A688 Pin Configuration Package1) 3 SOT-23 EHMHW Maximum Ratings per Diode Parameter Symbol |
OCR Scan |
BAW56 Q62702-A688 OT-23 02BSb05 23StOS 01S048M 235b05 marking E7B |