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    DIODE SYMBOL A1 Search Results

    DIODE SYMBOL A1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Datasheet
    CUZ24V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Datasheet
    CUZ16V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Datasheet

    DIODE SYMBOL A1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BAV70LT1

    Abstract: BAV70LT1G BAV70LT3 BAV70LT3G
    Contextual Info: BAV70LT1 Preferred Device Dual Switching Diode Common Cathode Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA Symbol Max Unit


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    BAV70LT1 OT-23 O-236) 25laws BAV70LT1/D BAV70LT1 BAV70LT1G BAV70LT3 BAV70LT3G PDF

    MMBD6100LT1

    Abstract: MMBD6100LT1G MMBD6100LT3 MMBD6100LT3G
    Contextual Info: MMBD6100LT1 Monolithic Dual Switching Diode Features • Pb−Free Packages are Available MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit Peak Forward Surge Current


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    MMBD6100LT1 MMBD6100LT1 MMBD6100LT1G MMBD6100LT3 MMBD6100LT3G PDF

    MMBD6100LT1

    Abstract: MMBD6100LT1G MMBD6100LT3 MMBD6100LT3G
    Contextual Info: MMBD6100LT1 Monolithic Dual Switching Diode Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit Peak Forward Surge Current


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    MMBD6100LT1 MMBD6100LT1/D MMBD6100LT1 MMBD6100LT1G MMBD6100LT3 MMBD6100LT3G PDF

    BAW56LT1

    Abstract: BAW56LT1G BAW56LT3 BAW56LT3G
    Contextual Info: BAW56LT1 Preferred Device Dual Switching Diode Common Anode Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA 4 A Symbol Max Unit


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    BAW56LT1 OT-23 O-236) BAW56LT1/D BAW56LT1 BAW56LT1G BAW56LT3 BAW56LT3G PDF

    BAV74LT1G

    Abstract: BAV74LT1 BAV74LT3 BAV74LT3G
    Contextual Info: BAV74LT1 Monolithic Dual Switching Diode Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS EACH DIODE ANODE 1 3 CATHODE 2 ANODE Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol


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    BAV74LT1 OT-23 BAV74LT1/D BAV74LT1G BAV74LT1 BAV74LT3 BAV74LT3G PDF

    BAV74LT1

    Abstract: BAV74LT1G BAV74LT3 BAV74LT3G Diode marking CODE 5M
    Contextual Info: BAV74LT1 Monolithic Dual Switching Diode Features • Pb−Free Packages are Available MAXIMUM RATINGS EACH DIODE ANODE 1 3 CATHODE 2 ANODE Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 1.8


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    BAV74LT1 OT-23 BAV74LT1 BAV74LT1G BAV74LT3 BAV74LT3G Diode marking CODE 5M PDF

    A1030 transistor

    Abstract: Q62702-A1030 marking code a4s
    Contextual Info: BAV 70W Silicon Switching Diode Array • For high speed switching applications • Common cathode Type Marking Ordering Code Pin Configuration BAV 70W A4s 1 = A1 Q62702-A1030 2 = A2 Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage


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    Q62702-A1030 OT-323 Nov-28-1996 A1030 transistor Q62702-A1030 marking code a4s PDF

    SC82

    Contextual Info: 1SS383T1 Preferred Device Dual Schottky Diode MAXIMUM RATINGS TA = 25°C Symbol Max Unit Continuous Reverse Voltage VR 40 V Maximum Peak Forward Current* IFM 300 mA IFM(surge) 500 mA 4 3 Symbol Max Unit 1 2 Symbol Max Unit PD 200 (Note 1) 1.6 (Note 1) mW


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    1SS383T1 SC-82 1SS383T1 SC-82 3000/Tape 1SS383T1/D SC82 PDF

    Contextual Info: SIEMENS BAS 16-03W Silicon Switching Diode Preliminary data • For high-speed switching applications Type Marking Ordering Code Pin Configuration Package BAS 16-03W B Q62702-A1231 1=A SOD-323 2=C Maximum Ratings Symbol Parameter Value 75 Diode reverse voltage


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    6-03W Q62702-A1231 OD-323 100ns, PDF

    A1s sot23

    Abstract: SOT-23 marking a1s Q62702-A688 MARKING CODE SOT23 A1S a1s, sot-23 sot23 a1s A1S diode
    Contextual Info: Silicon Switching Diode Array BAW 56 For high-speed switching applications ● Common anode ● Type Marking Ordering Code tape and reel BAW 56 A1s Q62702-A688 Pin Configuration Package1) SOT-23 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage


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    Q62702-A688 OT-23 A1s sot23 SOT-23 marking a1s Q62702-A688 MARKING CODE SOT23 A1S a1s, sot-23 sot23 a1s A1S diode PDF

    Contextual Info: SIEMENS BAS 28W Silicon Switching Diode Array For high-speed switching applications Electrical insulated diodes Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 =C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings Symbol Diode reverse voltage


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    Q62702-A3466 OT-343 EHN00019 100ns, PDF

    BAS19LT1G

    Abstract: BAS21LT1 BAS19 BAS19LT1 BAS19LT3 BAS20 BAS20LT1 BAS21 BAS21DW5T1 On semiconductor date Code sot-23
    Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Features http://onsemi.com • Pb−Free Packages are Available HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Rating Symbol Continuous Reverse Voltage BAS19 BAS20 BAS21


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    BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 BAS19 BAS20 BAS21 BAS19LT1G BAS21LT1 BAS19 BAS19LT1 BAS19LT3 BAS20 BAS20LT1 BAS21 BAS21DW5T1 On semiconductor date Code sot-23 PDF

    BAV70

    Contextual Info: BAV70 Silicon Switching Diode Array 3  For high-speed switching applications  Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV70 A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage


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    BAV70 VPS05161 EHA07004 EHB00066 EHB00067 Jul-31-2001 EHB00068 BAV70 PDF

    BAV99

    Abstract: free pdf transistor a7s bav99 marking diode bav A2 SOT23
    Contextual Info: BAV99 Silicon Switching Diode Array 3  For high-speed switching applications  Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAV99 A7s Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage


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    BAV99 VPS05161 EHA07005 EHB00076 EHB00077 Jul-30-2001 EHB00078 BAV99 free pdf transistor a7s bav99 marking diode bav A2 SOT23 PDF

    SC-88A footprint

    Abstract: BAS19LT1G JX SOT23 SOT23 Marking JX sot-23 Marking do hM sot-353 marking 04 sot-23 marking 25 SOT-23 ref marking cd sc-88a BAS19LT3G
    Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Features • Pb−Free Packages are Available HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Rating Symbol Continuous Reverse Voltage BAS19 BAS20 BAS21 Repetitive Peak Reverse Voltage


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    BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 BAS19 BAS20 BAS21 SC-88A footprint BAS19LT1G JX SOT23 SOT23 Marking JX sot-23 Marking do hM sot-353 marking 04 sot-23 marking 25 SOT-23 ref marking cd sc-88a BAS19LT3G PDF

    Contextual Info: Philips Semiconductors Product specification Silicon planar epitaxial high-speed double diode FEATURES • Plastic SMD envelope • High switching speed • General application. BAW56W QUICK REFERENCE DATA SYMBOL CONDITIONS MAX. UNIT Per diode Vr continuous reverse


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    BAW56W PDF

    450KW

    Contextual Info: BAT 63 Silicon Schottky Diode ● Low barrier diode for mixer and detectors up to GHz frequencies Type BAT 63 Ordering Code tape and reel 1 Q62702-A1004 A1 Pin Configuration 2 3 4 C2 A2 C1 Marking Package 63 SOT-143 Maximum Ratings Parameter Symbol Values


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    Q62702-A1004 OT-143 450KW PDF

    A1 SOT143

    Abstract: VPS05178 BAW101 EHA07008
    Contextual Info: BAW101 Silicon Switching Diode Array 3  Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage


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    BAW101 VPS05178 EHA07008 OT143 EHN00019 Aug-20-2001 EHB00104 EHB00103 A1 SOT143 VPS05178 BAW101 EHA07008 PDF

    diode marking 74

    Abstract: BAV74
    Contextual Info: BAV 74 Silicon Switching Diode Array 3 • For high-speed switching applications • Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV 74 JAs Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage


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    VPS05161 EHA07004 OT-23 EHB00071 EHB00072 Oct-11-1999 EHB00073 diode marking 74 BAV74 PDF

    BAV70

    Abstract: SOT-23 marking A4s A4S SOT-23
    Contextual Info: BAV 70 Silicon Switching Diode Array 3 • For high-speed switching applications • Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV 70 A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage


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    VPS05161 EHA07004 OT-23 EHB00066 EHB00067 Oct-07-1999 EHB00068 BAV70 SOT-23 marking A4s A4S SOT-23 PDF

    fast recovery diode 54

    Abstract: BYC10-600CT BYC5-600 BYV29
    Contextual Info: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10-600CT SYMBOL • Dual diode • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET


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    BYC10-600CT O220AB) BYC10-600CT fast recovery diode 54 BYC5-600 BYV29 PDF

    Contextual Info: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10-600CT SYMBOL • Dual diode • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET


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    BYC10-600CT O220AB) BYC10-600CT PDF

    BAW56TT1

    Abstract: SMD310
    Contextual Info: BAW56TT1 Preferred Device Advance Information Dual Switching Diode http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 mW Peak Forward Surge Current


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    BAW56TT1 r14525 BAW56TT1/D BAW56TT1 SMD310 PDF

    BAW56TT1

    Abstract: BAW56TT1G
    Contextual Info: BAW56TT1 Preferred Device Dual Switching Diode Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 1.8


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    BAW56TT1 BAW56TT1/D BAW56TT1 BAW56TT1G PDF