DIODE SY 250 Search Results

MARKING SY SOT23

Abstract: SY SOT23 MARKING SOT23-3 LF MARKING P8A
Contextual Info: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 -SEPTEMBER 1995 O DIODE PIN CONNECTION r-W rW •► 1 3 SOT23 PART MARKING DETAIL - P8A ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L VALUE UNIT rrm 100 V *F A V 250 mA ^S M 3.0 A 330

4N29-4N33

Contextual Info: 57E J> ÛUALITY TECHNOLOGIES CORP Optoisolator Specifications _ 7MbbfiSl Ü00mi|4 •ÛTY 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier SY M BO L M IN E

Contextual Info: HSS83-Silicon Epitaxial Planar Diode for High Voltage Switching Features Outline • High reverse voltage. VR=250V • Suitable for 5mm pitch high speed automatical insertion. • S m all g la ss p ack a g e (M H D ) en a b les e a sy

SY 625

Contextual Info: HSS82-Silicon Epitaxial Planar Diode for High Voltage Switching Features Outline • High reverse voltage. VR=200V • Suitable for 5mm pitch high speed automatical insertion. • S m all g la ss p ack a g e (M H D ) en a b les ea sy

diode sy 715

Contextual Info: SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR ZDX3F ZDX4F ISSUE 2 -MARCH 94 ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SY M B O L Repetitive Peak R everse Voltage V RRM Average Rectified Forw ard Current Non-Repetitive Peak Forw ard Current t=1ns ZD X 3F

1SS119

Contextual Info: ADE-208-180A Z 1SS119 Silicon Epitaxial Planar Diode for High Speed Switching HITACHI Features Rev, 1 Aug. 1995 Outline • Low capacitance. (C=3.0pF max) • Short reverse recovery time, (trr =3.5ns max) • Sm all g la ss p ackage (M H D ) en a b les ea sy

VUB145-16NOXT

Contextual Info: VUB 145-16NO1 Three Phase Rectiier Bridge w ith IG B T and F ast R ecovery D iode f or B rak ing Sy stem Rectiier Diode VR Fast Recov. Diode = 1600 V VC E =S 1200 V R M IdAV M = 14 5A VF = 2.76 V IF SM = 1100 A IF SM = 200 A IG BT V C E S= 1200 V I C 8 0 VC

SY SOT23

Contextual Info: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 - JANUARY 1998 PIN CONFIGURATION 1 PARTM ARKING DETAIL Î F M M V 109 - 4A ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L P o w e r D is s ip a tio n at T amb=25°C VALUE UNIT 330 mW -55 to +150 °C

Diode SY 350

Contextual Info: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 - JANUARY 1998 PIN CONFIGURATION 1 PARTM ARKING DETAILS Î FM M V105G - 4EZ ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L P o w e r D is s ip a tio n at T amb=25°C VALUE UNIT 330 mW -55 to +150 °C

Contextual Info: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 3 - JANUARY 1998 PIN CONFIGURATION 1 PARTM ARKING DETAIL Î F M M V 3 1 0 2 -4 C ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L P o w e r D is s ip a tio n at T amb=25°C VALUE UNIT 330 mW -55 to +150

B159 diode

Abstract: 6DI50B-050 le50a 6di50b B-159 M606
Contextual Info: 6DI50B-050 50A ✓ < 7 ! t ± ' N r 7 — t ' ^ L — -/u : Outline Drawings - POWER TRANSISTOR MODULE •¡tfjft : F e a tu re s 1 7 ÿ —sft-f y 'sy »hFE*''iëj^ =t — KF*3 j Including Free W heeling Diode High D C Current Gain Insulated Type Iffliê : A p p lic a tio n s

Contextual Info: SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE PAIR CO M M O N CATHODE FMMD2837 I_ PIN C O N FIG U R A T IO N 1 n P A R T M A R K IN G D E T A IL S i k. j k F M M D 2 8 3 7 -A 5 3 3 MS ABSOLUTE MAXIMUM RATINGS PARAMETER SY M B O L Breakdown Voltage at Ir=100|jA

11F2

Contextual Info: Optoisolator Specifications H11F1, H11F2, H11F3 Optoisolator GaAIAs Infrared Emitting Diode and Bilateral Analog FET T h e H I IF fam ily con sists o f a g alliu m -a lu m in u m -a rse n k le in fra re d e m ittin g d io d e co u p led to a sy m m etrical b ila te ra l silicon p h o to d e te cto r.

E72445

Abstract: 2500VRM
Contextual Info: C a Y D O M Series M50 P A R Î NUMBER t&f N tlFJCA TIO N 50-100Amp SCR/DIODE MODULES • Over 40KW Output Capability ELECTRICAL SY M B O L Maximum Voltage Drop @ Am ps Peak vF • M SPECIFICATION M 5050 M 50100 1 .7 V 0 5OA I.4 V 100A U di/dt Critical Rate of Rise o f O n-State Current @ Tj=125’C A/(»

2N7016

Abstract: CIL TRANSISTOR LD070
Contextual Info: lflE D SILICONIX INC « yS ilicon ix 'Silîcor _ • A55M735 D01512S 2 2N7016 J U f ilincorporated - T -3 ° i-n P-C h a n n e l Enhancem ent M o d e T ra n sisto r 4-PIN DIP Similar to TO-250 TO P VIEW PRODUCT SUMMARY V(8R|DSS -60 r o y 1.0 1 Œ 2 C •o

Schottky Rectifier 250V

Abstract: diode 20000v NX DIODE schottky diode 800V diode 50000v Schottky diode high reverse voltage gw diode diode 10000v diode schottky 900v
Contextual Info: Table 1 Symbols Z FW GW A B C D E F G H J K L M N P Q R Repetitive reverse voltage 25 V 30 V 10V 50 V 100 V 150 V 200V 250V 300V 400V 500V 600V 700V 800V 900V 1000V 1100V 1200 V 1300 V Repetitive reverse voltage 1400V 1500V 1600 V 1700V 1800 V 1900V 2000V

diode sy 160

Abstract: diode sy 400 MG 12v diode Diode SY 250 BLF051MGC-12V-P BLF051MGC-24V-P BLF051MGC-6V-P BLF051SYC-12V-P BLF051SYC-24V-P BLF051SYC-6V-P
Contextual Info: 5mm FLANGE BASED LED LAMPS Features BLF051 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. Package Dimensions zLONG LIFE. zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.

diode sy 400

Abstract: diode sy 160 diode sy-250 BLF052MGC-12V-P BLF052MGC-24V-P BLF052MGC-6V-P BLF052SYC-12V-P BLF052SYC-24V-P BLF052SYC-6V-P MG 12v diode
Contextual Info: 5mm FLANGE BASED LED LAMPS Features BLF052 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. zLONG LIFE. Package Dimensions zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.

diode sy 160

Abstract: diode sy Ic mega 16 BLB101SYC-12V-P BLB101SYC-24V-P BLB101SYC-6V-P BLB101MGC-12V-P BLB101MGC-24V-P BLB101MGC-6V-P
Contextual Info: 10mm BAYONET BASED LED LAMPS Features BLB101 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. Package Dimensions zLONG LIFE. zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.

diode sy 160

Abstract: BLS101 BLS101MGC-12V-P BLS101MGC-24V-P BLS101MGC-6V-P BLS101SYC-12V-P BLS101SYC-24V-P BLS101SYC-6V-P
Contextual Info: 10mm SCREW BASED LED LAMPS Features BLS101 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. zLONG LIFE. Package Dimensions zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.

diode sy 160

Abstract: BLB102SYC-24V-P BLB102MGC-12V-P BLB102MGC-24V-P BLB102MGC-6V-P BLB102SYC-12V-P BLB102SYC-6V-P
Contextual Info: 10mm BAYONET BASED LED LAMPS Features BLB102 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. Package Dimensions zLONG LIFE. zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.

diode sy 400

Abstract: BLF041MGC-12V-P BLF041MGC-24V-P BLF041MGC-6V-P BLF041SYC-12V-P BLF041SYC-24V-P BLF041SYC-6V-P
Contextual Info: 4mm FLANGE BASED LED LAMPS Features BLF041 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. zLONG LIFE. Package Dimensions zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.

C1685 transistor

Abstract: transistor c1684 Cl684 MCT-2201 MCT2200 C1685 C1681 TRANSISTOR C1685 C1285 H127
Contextual Info: GENL INSTR-i OPTOELEK flfl GÉNÉRAL INSTRUMENT DE | 3ÔT015Ô DOOETbT T | ~ VDE APPROVED p h o to tra n sisto r op toco u p le rs DVE PACKAGE DIMENSIONS [& eg] DESCRIPTION Æi r* { 6.86 .270 6.35 (.250) 0.36 (.014) I 0.20 (.008) O WWW T 8.89 (.350) 7.62

diode sy 200

Abstract: diode sy 170 diode sy 400 L-7676CSEC
Contextual Info: 7.6mm x7.6mm SUPER FLUX Kingbright L-7676CSEC L-7676SURC L-7676CSEC-E L-7676SURC-E L-7676CSYC Package Dimensions Features lSUPER FLUX OUTPUT. lDESIGN FOR HIGH CURRENT OPERATION. lOUTSTANDING MATERIAL EFFICIENCY. lRELIABLE AND RUGGED. Description The Super Bright Orange source color devices are made