DIODE SY 200 Search Results

diode sy 180 10

Abstract: 1ss373
Contextual Info: 1SS373 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • Low forward voltage: DESCRIPTION PIN VF = 0.23V typ. @IF = 5mA 1 Cathode 2 Anode 2 1 SY Top View Marking Code: "SY" Simplified outline SOD-323 and symbol

diode sy 180 10

Abstract: 1ss373
Contextual Info: 1SS373 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • Low forward voltage: DESCRIPTION PIN VF = 0.23V typ. @IF = 5mA 1 Cathode 2 Anode 2 1 SY Top View Marking Code: "SY" Simplified outline SOD-323 and symbol

diode sy 180 10

Abstract: 1ss373 diode sy
Contextual Info: 1SS373 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • Low forward voltage: DESCRIPTION PIN VF = 0.23V typ. @IF = 5mA 1 Cathode 2 Anode 2 1 SY Top View Marking Code: "SY" Simplified outline SOD-323 and symbol

diode sy

Abstract: diode sy 160 diode sy 200 1ss373 diodes SY 200
Contextual Info: 1SS373 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • High speed switching 1 Cathode 2 Anode 2 1 SY Top View Marking Code: "SY" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC

diode sy 200

Abstract: 1ss373 diode sy 180 10
Contextual Info: 1SS373 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • High speed switching 1 Cathode 2 Anode 2 1 SY Top View Marking Code: "SY" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC

SY 625

Contextual Info: HSS82-Silicon Epitaxial Planar Diode for High Voltage Switching Features Outline • High reverse voltage. VR=200V • Suitable for 5mm pitch high speed automatical insertion. • S m all g la ss p ack a g e (M H D ) en a b les ea sy

4N29-4N33

Contextual Info: 57E J> ÛUALITY TECHNOLOGIES CORP Optoisolator Specifications _ 7MbbfiSl Ü00mi|4 •ÛTY 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier SY M BO L M IN E

MARKING SY SOT23

Abstract: SY SOT23 MARKING SOT23-3 LF MARKING P8A
Contextual Info: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 -SEPTEMBER 1995 O DIODE PIN CONNECTION r-W rW •► 1 3 SOT23 PART MARKING DETAIL - P8A ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L VALUE UNIT rrm 100 V *F A V 250 mA ^S M 3.0 A 330

VUB145-16NOXT

Contextual Info: VUB 145-16NO1 Three Phase Rectiier Bridge w ith IG B T and F ast R ecovery D iode f or B rak ing Sy stem Rectiier Diode VR Fast Recov. Diode = 1600 V VC E =S 1200 V R M IdAV M = 14 5A VF = 2.76 V IF SM = 1100 A IF SM = 200 A IG BT V C E S= 1200 V I C 8 0 VC

Contextual Info: VUB 116-16NO1 Three Phase Rectiier Bridge w ith IG B T and F ast R ecovery D iode f or B rak ing Sy stem Rectiier Diode VR Fast Recov. Diode = 1600 V VC E =S 1200 V R M IdAV M = 116 A VF = 2.76 V IF SM = 700 A IF SM = 200 A IGBT V C E S= 1200 V I C 8 0 VC

diode sy 715

Contextual Info: SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR ZDX3F ZDX4F ISSUE 2 -MARCH 94 ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SY M B O L Repetitive Peak R everse Voltage V RRM Average Rectified Forw ard Current Non-Repetitive Peak Forw ard Current t=1ns ZD X 3F

Contextual Info: HSS83-Silicon Epitaxial Planar Diode for High Voltage Switching Features Outline • High reverse voltage. VR=250V • Suitable for 5mm pitch high speed automatical insertion. • S m all g la ss p ack a g e (M H D ) en a b les e a sy

Contextual Info: ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES I SSUE 2 -M A R CH 1995_ 2 _ DIODE PIN CONNECTION 1 t PARTMARKING DETAIL ZC2800E - E6 ZC2811E-E8 ZC5800E-E9 3 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L Power Dissipation at Tamb- 25°C

"DIODE" SY 171

Abstract: THZ3R3A05 thz010a10 THZ6R0A10 THZ013A05
Contextual Info: ALLEGRO M IC RO SY ST E MS 8514019 S PR A G U E . INC ^3 D • GS0433Ô SEMICONDS/ IC S 00D3bED 93D R ■ 03620 _ ALGR T '- 't /"* DIODE CHIPS ‘THZ’ Series ‘A ’ Zener Diodes ELECTRICAL CHARACTERISTICS at Tfl = 25°C @ZT mA Max. (m-A)

SY SOT23

Contextual Info: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 - JANUARY 1998 PIN CONFIGURATION 1 PARTM ARKING DETAIL Î F M M V 109 - 4A ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L P o w e r D is s ip a tio n at T amb=25°C VALUE UNIT 330 mW -55 to +150 °C

Contextual Info: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 3 - JANUARY 1998 PIN CONFIGURATION 1 PARTM ARKING DETAIL Î F M M V 3 1 0 2 -4 C ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L P o w e r D is s ip a tio n at T amb=25°C VALUE UNIT 330 mW -55 to +150

B159 diode

Abstract: 6DI50B-050 le50a 6di50b B-159 M606
Contextual Info: 6DI50B-050 50A ✓ < 7 ! t ± ' N r 7 — t ' ^ L — -/u : Outline Drawings - POWER TRANSISTOR MODULE •¡tfjft : F e a tu re s 1 7 ÿ —sft-f y 'sy »hFE*''iëj^ =t — KF*3 j Including Free W heeling Diode High D C Current Gain Insulated Type Iffliê : A p p lic a tio n s

1BH62

Abstract: DIODE 1BH62 IS1835 1JH62 1DH62 1GH62 1JH62 3-3b1a DIODE 39c 1S1834 1S1835
Contextual Info: 9097250 TOSHIBA DISCRETE/OPTO 39C FAST RECOVERY DIODE 02240 »^^0^7250 0002540 S Unit in I S 1835 600V Bin 1A MAXIMUM RATING C H A R A C T E R IST IC SY M BO L 400 1S1834 R epetitiv e P eak R e v e rse V oltage 1S1835 V Vrrm 600 1S1834 R e v e r s e V oltage

toshiba 6jg11

Abstract: 12GH11 12JG11 12JH11 6JG11 12GG11 IF-10A 6DG11 6GG11 12BG11
Contextual Info: 9097250 1ñ dË TOSHIBA 39C DI S C R E T E /O P T O J t D^SSD 0 0 0 5 2 4 3 D T - O J - / / FAST RECOVERY DIODE | ~ - 02243 600V 6A 6 JG 1 1 M A X IM U M RATINGS C H A R A C T E R IS T IC SY M BO L 100 200 6DG11 Repetitive Peak R everse Voltage

Contextual Info: s q . i .p . Square In-line Package Input/Output In-line Package Bridge Diode • O U TL IN E DIM ENSIONS S3WBD 600V 2.3A U nit • mm W eight • 5.5g ■ RATINGS Absolute Maximum Ratings i i a I t em Sy mb o l V M axim um R e v e rs e V o lta g e m tiW M

diode sy 170

Contextual Info: SEM ICONDUCTOR KDR728 TECHNI CAL DATA S C H O T T K Y BARRI ER T YP E DIODE LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES • L ow Forw ard V oltage : V F 2 =0.42(T yp.) • Sm all Package : USC. w MAXIMUM RATING (Ta=25°C) C H A R A C T E R IS T IC SY M B O L

sy 320 diode

Contextual Info: P h ilip s Se m ico n d u cto rs P re lim in sry specification Schottky barrier diodes FEA T U R ES BAT54W series Q U IC K R E F E R EN C E DATA • Ultra-fast switching speed • Low forward voltage SY M B O L PA RAM ET ER CO N DITIO N S UNIT MAX. Per diode

15FWJ11

Abstract: 15GWJ11 30GWJ11 30FWJ11 AC23A
Contextual Info: 9097250 TOSHIBA 39C CDI S C R E T E / O P T O 02257 7^ 03-^ 7 SCHOTTKY BARRIER DIODE Unit in nm 15GWJ11 40V 15A MAXIMUM RATINGS C H A R A C T E R IS T IC SY M B O L Repetitive Peak 15FWJ11 R everse Voltage 15GWJ11 RATING UNIT 30 V rrm 40 Average F o rw a rd C u rrent

Contextual Info: W hnt H E W L E T T WilEM PA C K A R D GaAs Schottky Diode Technical Data HS CH-9401 Features • Low Ju n ction C apacitance — typ ically 35 fF • Low S eries R esistan ce — typ ically 6 Q. • T ri-m etal sy stem for im proved relia b ility • High cu t-o ff freq uency