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    DIODE SUBSTITUTION Search Results

    DIODE SUBSTITUTION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ20V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Datasheet
    CUZ24V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Datasheet
    CUZ16V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Datasheet

    DIODE SUBSTITUTION Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IDG 600

    Abstract: M61880FP 20P2N-A M61880
    Contextual Info: M61880FP Laser Diode Driver/Controller REJ03F0068-0100Z Rev.1.0 Sep.19.2003 Description The M61880FP is a laser diode driver/controller that performs drive and laser power control of a type of semiconductor laser diode in which the semiconductor laser diode anode and monitoring photodiode cathode are connected to the stem.


    Original     		M61880FP REJ03F0068-0100Z M61880FP IDG 600 20P2N-A M61880 PDF

    Contextual Info: DEMO MANUAL DC1926A Dual Ideal Diode Controller DESCRIPTION Demonstration circuit 1926A features the LTC4353, a dual low voltage ideal diode controller, in a typical 12A application. The LTC4353 creates two near-ideal diodes using external N-channel MOSFETs thereby replacing high


    Original     		DC1926A LTC4353, LTC4353 dc1926af PDF

    Contextual Info: InGaAlP-High Brightness-Lumineszenzdiode 605 nm, High Optical Power InGaAlP High Brightness Light Emitting Diode (605 nm, High Optical Power) F 2001A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature • Optimierte Lichtauskopplung durch


    Original     		PDF

    LCD 2002a

    Abstract: c1449 C1449 transistor LCD+2002a 2002A
    Contextual Info: InGaAlP-High Brightness-Lumineszenzdiode 587 nm, High Optical Power InGaAlP High Brightness Light Emitting Diode (587 nm, High Optical Power) F 2002A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature • Optimierte Lichtauskopplung durch


    Original     		PDF

    CIE1931

    Contextual Info: 4.0x4.0mm RIGHT ANGLE SURFACE MOUNT LED LAMP Part Number: AA4040RWC/Z PRELIMINARY SPEC WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN Light Emitting Diode.


    Original     		AA4040RWC/Z 500pcs DSAH1109 AUG/15/2008 CIE1931 PDF

    CIE1931

    Contextual Info: 4.0x4.0mm RIGHT ANGLE SURFACE MOUNT LED LAMP Part Number: AA4040RWC/Z PRELIMINARY SPEC WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN Light Emitting Diode.


    Original     		AA4040RWC/Z 500PCS 4600k DSAH1109 JUN/07/2007 CIE1931 PDF

    CIE1931

    Contextual Info: 1.0x0.5mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APHH1005RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features


    Original     		APHH1005RWF/A 2000PCS L/15/2006 DSAG6504 JUL/15/2006 CIE1931 PDF

    1203-005570

    Abstract: CIE1931
    Contextual Info: 1.0x0.5mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APHH1005RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features


    Original     		APHH1005RWF/A 2000PCS 4600k DSAG6504 JUN/04/2007 1203-005570 CIE1931 PDF

    Contextual Info: 3.5x2.8mm SURFACE MOUNT LED LAMP Part Number: AAA3528QWDSYKS-AMT ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES White Super Bright Yellow Description The source color devices are made with InGaN Light Emit- Features ting Diode.


    Original     		AAA3528QWDSYKS-AMT ED4701/100 DSAL3628 SEP/16/2012 PDF

    CIE1931

    Contextual Info: 1.0x0.5mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APHH1005RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features


    Original     		APHH1005RWF/A 2000pcs DSAG6504 AUG/15/2008 CIE1931 PDF

    CIE1931

    Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APH1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description The source color devices are made with InGaN on SiC Light Emitting Diode.


    Original     		APH1608RWF/A 2000PCS MAY/23/2006 DSAG3635 CIE1931 PDF

    IDC2000

    Abstract: CIE1931
    Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APH1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features


    Original     		APH1608RWF/A 2000PCS 4600k DSAG3635 JUN/29/2007 IDC2000 CIE1931 PDF

    CIE1931

    Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APH1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features


    Original     		APH1608RWF/A 2000pcs DSAG3635 AUG/16/2008 CIE1931 PDF

    CIE1931

    Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APT1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features


    Original     		APT1608RWF/A 2000pcs DSAG3636 AUG/16/2008 CIE1931 PDF

    Contextual Info: 4.0x4.0mm RIGHT ANGLE SURFACE MOUNT LED LAMP PRELIMINARY SPEC P/N: AA4040RWC/J ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES WHITE Description The source color devices are made with InGaN on SiC Light Emitting Diode.


    Original     		AA4040RWC/J 500PCS DSAG2565 APR/18/2006 PDF

    LM 385 N

    Abstract: 1201001 CIE1931
    Contextual Info: 4.0x4.0mm RIGHT ANGLE SURFACE MOUNT LED LAMP PRELIMINARY SPEC Part Number: AA4040RWC/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode.


    Original     		AA4040RWC/A 500PCS 4600k DSAG3661 MAY/19/2007 LM 385 N 1201001 CIE1931 PDF

    CIE1931

    Contextual Info: 1.6x0.6mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APA1606RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode.


    Original     		APA1606RWF/A 2000PCS 4600k DSAG3638 MAY/17/2007 CIE1931 PDF

    CIE1931

    Contextual Info: 1.6x0.6mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APA1606RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode.


    Original     		APA1606RWF/A 2000pcs DSAG3638 AUG/15/2008 CIE1931 PDF

    LM 385 N

    Abstract: CIE1931
    Contextual Info: 4.0X0.8mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APJKA4008RWC/A ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES WHITE Description The source color devices are made with InGaN on SiC Light Emitting Diode.


    Original     		APJKA4008RWC/A 2000PCS 5600k 4600k DSAG3649 JUN/29/2007 LM 385 N CIE1931 PDF

    232 GFP smd diode

    Abstract: Diode SMD SJ 8C low noise amplifier amp 77 medical ultrasound guide smd type T3rd CLC425 CLC425A8B CLC425AIB CLC425AJE CLC425AJP
    Contextual Info: Ultra Low Noise Wideband Op Amp SComlinear A National Semiconductor Company CLC425 APPLICATIONS: • instrumentation sense amplifiers • ultrasound pre-amps • magnetic tape & disk pre-amps • photo-diode transimpedance amplifiers • wide band active filters


    OCR Scan     		CLC425 CLC425 05nV/VHz, OA-15 232 GFP smd diode Diode SMD SJ 8C low noise amplifier amp 77 medical ultrasound guide smd type T3rd CLC425A8B CLC425AIB CLC425AJE CLC425AJP PDF

    CIE1931

    Contextual Info: 4.0X0.8mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APJKA4008RWC/A ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES WHITE Description The source color devices are made with InGaN on SiC Light Emitting Diode.


    Original     		APJKA4008RWC/A 2000PCS DSAG3649 MAY/23/2006 CIE1931 PDF

    CIE1931

    Contextual Info: 4.0x4.0mm RIGHT ANGLE SURFACE MOUNT LED LAMP Part Number: AA4040RWC/A PRELIMINARY SPEC White ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode.


    Original     		AA4040RWC/A 500pcs DSAG3661 AUG/15/2008 CIE1931 PDF

    CIE1931

    Contextual Info: 3.0mmx1.0 mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APA3010RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode.


    Original     		APA3010RWF/A 2000PCS LEVE18 4600k DSAG3639 MAY/17/2007 CIE1931 PDF

    barcodescanner

    Abstract: barcode scanner OSRAM automotive lamp F 1998A
    Contextual Info: InGaAlP-High Brightness-Lumineszenzdiode 632 nm, High Optical Power InGaAlP High Brightness Light Emitting Diode (632 nm, High Optical Power) F 1998A Vorläufige Daten/Preliminary Data Wesentliche Merkmale Feature • Optimierte Lichtauskopplung durch Oberflächenstrukturierung und Stromverteilung


    Original     		PDF