DIODE SR 3A0 Search Results

diode sr 3A0

Abstract: 54ACT163 54ACT163DMQB 54ACT163FMQB 54ACT163LMQB ACT163 J163 diode 3A0
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 07/02/96 Last Update Date: 10/23/97 Last Major Revision Date: 09/21/97 MN54ACT163-X REV 3A0 Synchronous Presettable Binary Counter General Description The ACT163 is a high-speed synchronous modulo-16 binary counter. It is synchronously

diode sr 3A0

Abstract: diode 3A0 5962-9175802MPA CLC420BE-QML MNCLC420B-X
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 04/07/98 Last Update Date: 08/02/01 Last Major Revision Date: 07/18/01 MNCLC420B-X REV 3A0 HIGH SPEED, VOLTAGE FEEDBACK OPERATIONAL AMPLIFIER General Description The CLC420B is an operational amplifier designed for applications requiring matched inputs

HIR26-21C

Abstract: w32 smd transistor w32 smd transistor 143 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB 19-223SURSYGC/S530-A3/E3/TR8 l289 itr8102 w27 smd transistor
Contextual Info: Everlight Electronics was established in 1983 and plays a critical role in the history of Taiwan’s LED industry. It has become the leader in the Taiwan LED packaging industry. Although facing competition from numerous worldwide Optoelectronic suppliers, Everlight

diode sr 3A0

Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 11/11/98 Last Update Date: 10/09/03 Last Major Revision Date: 09/26/03 MRLM124A-X-RH REV 5A0 QUAD OPERATIONAL AMPLIFER, SINGLE SUPPLY, LOW POWER: GUARANTEED TO 50k AND 100k rd Si TESTED TO MIL-STD-883, METHOD 1019

LM124A

Abstract: LM124AJLQMLV LM124AJRQMLV LM124AWGLQMLV LM124AWGRQMLV LM124AWLQMLV LM124AWRQMLV M0003130
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 11/11/98 Last Update Date: 06/21/02 Last Major Revision Date: 06/10/02 MRLM124A-X-RH REV 4A0 QUAD OPERATIONAL AMPLIFER, SINGLE SUPPLY, LOW POWER: GUARANTEED TO 50k AND 100k rd Si TESTED TO MIL-STD-883, METHOD 1019.5

AP-657

Abstract: gt28f320c3ba110 29064
Contextual Info: E PRELIMINARY 3 VOLT ADVANCED+ BOOT BLOCK FLASH MEMORY 28F008/800C3, 28F016/160C3, 28F032/320C3 x8/x16 n n n n n n Flexible SmartVoltage Technology  2.7 V–3.6 V Read/Program/Erase  2.7 V or 1.65 V I/O Option Reduces Overall System Power  12 V for Fast Production

28F008C3

Abstract: 28F016C3 28F032C3 28F160C3 28F320C3 28F800C3 TE28F320C3B110 2B0000-2BFFFF
Contextual Info: E PRODUCT PREVIEW 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 28F008C3, 28F016C3, 28F032C3 28F800C3, 28F160C3, 28F320C3 n n n n n n Flexible SmartVoltage Technology  2.7 V–3.6 V Read/Program/Erase  2.7 V or 1.65 V I/O Option Reduces

28F008C3

Abstract: 28F016C3 28F032C3 28F160C3 28F320C3 28F800C3 sr5 diode
Contextual Info: E PRELIMINARY 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 28F008C3, 28F016C3, 28F032C3 28F800C3, 28F160C3, 28F320C3 n n n n n n Flexible SmartVoltage Technology  2.7 V–3.6 V Read/Program/Erase  2.7 V or 1.65 V I/O Option Reduces

Intel SCSP

Abstract: FLASH MEMORY 38F PF38F1010C0ZTL0 intel 28f 28F160C3 28F320C3 RD28F1604C3BD70 RD28F3204C3B70
Contextual Info: Intel Advanced+ Boot Block Flash Memory C3 SCSP Family Datasheet Product Features • ■ ■ ■ Flash Memory Plus SRAM — Reduces Memory Board Space Required, Simplifying PCB Design Complexity SCSP Technology — Smallest Memory Subsystem Footprint

Intel Stacked CSP

Abstract: transistor 2N 5551 28F160C3 28F320C3 252636 RD28F1604C3BD70 2N2728
Contextual Info: 3 Volt Intel Advanced+ Boot Block Flash Memory C3 Stacked-Chip Scale Package Family Datasheet Product Features • ■ ■ ■ Flash Memory Plus SRAM — Reduces Memory Board Space Required, Simplifying PCB Design Complexity Stacked-Chip Scale Package (StackedCSP) Technology

Intel SCSP

Abstract: Intel Stacked CSP BA 658 28F160C3 28F320C3
Contextual Info: Intel Advanced+ Boot Block Flash Memory C3 SCSP Family Datasheet Product Features • ■ ■ ■ Flash Memory Plus SRAM — Reduces Memory Board Space Required, Simplifying PCB Design Complexity SCSP Technology — Smallest Memory Subsystem Footprint

te28f160

Abstract: TE28F800 intel e te28f160c3bc70 F8000-FFFFF 29064 TE28F320
Contextual Info: 3-Volt Advanced+ Boot Block Flash Memory 28F800C3, 28F160C3, 28F320C3, 28F640C3 x16 Datasheet Product Features • ■ ■ ■ ■ ■ ■ ■ Flexible SmartVoltage Technology — 2.7 V–3.6 V Read/Program/Erase — 12 V for Fast Production Programming

ge28f320c3bd

Abstract: Intel SCSP 28F160C3 28F320C3 28F640C3 28F800C3 TE28F320C3 te28f160c3bc70 ge28f160 vf bga
Contextual Info: 3-Volt Advanced+ Boot Block Flash Memory 28F800C3, 28F160C3, 28F320C3, 28F640C3 x16 Datasheet Product Features • ■ ■ ■ ■ ■ ■ ■ Flexible SmartVoltage Technology — 2.7 V–3.6 V Read/Program/Erase — 12 V for Fast Production Programming

ge28f320c3bd70

Abstract: GE28F160C3TC70 GE28F640C3TC80 TE28F800C3BA110 28F160C3 28F320C3 28F640C3 28F800C3
Contextual Info: 3-Volt Advanced+ Boot Block Flash Memory 28F800C3, 28F160C3, 28F320C3, 28F640C3 x16 Preliminary Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V–3.6 V Read/Program/Erase — 12 V for Fast Production Programming • 1.65 V–2.5 V or 2.7 V–3.6 V I/O Option

28F160C3

Abstract: 28F320C3 28F640C3 28F800C3
Contextual Info: 3 Volt Advanced+ Boot Block Flash Memory 28F800C3, 28F160C3, 28F320C3, 28F640C3 x16 Preliminary Datasheet Product Features • ■ ■ ■ ■ ■ Flexible SmartVoltage Technology — 2.7 V–3.6 V Read/Program/Erase — 12 V for Fast Production Programming

29064

Contextual Info: 3 Volt Advanced+ Boot Block Flash Memory 28F800C3, 28F160C3, 28F320C3, 28F640C3 x16 Preliminary Datasheet Product Features • ■ ■ ■ ■ ■ Flexible SmartVoltage Technology — 2.7 V–3.6 V Read/Program/Erase — 12 V for Fast Production Programming

rc28F640C3TC90

Abstract: intel 28f160 290645-010 28f160 GT28F640C3BC100 Intel 28F640C3 TE28F640C3BC90 28F160C3 28F320C3 28F640C3
Contextual Info: 3 Volt Advanced+ Boot Block Flash Memory 28F800C3, 28F160C3, 28F320C3, 28F640C3 x16 Preliminary Datasheet Product Features • ■ ■ ■ ■ ■ ■ Flexible SmartVoltage Technology — 2.7 V–3.6 V Read/Program/Erase — 12 V for Fast Production Programming

Contextual Info: PRELIMINARY 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 28F008C3, 28F016C3, 28F032C3 28F800C3, 28F160C3, 28F320C3 n Flexible SmartVoltage Technology — 2.7 V-3.6 V Read/Program/Erase — 2.7 V or 1.65 V I/O Option Reduces Overall System Power

29064

Contextual Info: intel PRELIMINARY 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 28F008C3, 28F016C3, 28F032C3 28F800C3, 28F160C3, 28F320C3 Flexible SmartVoltage Technology — 2.7 V-3.6 V Read/Program/Erase — 2.7 V or 1.65 V I/O Option Reduces Overall System Power

Contextual Info: ADVANCED INFORMATION MX29LW320T/B 32M-BIT [4M x 8 / 2M x 16] ONLY CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • • • • • • Supply voltage range: 2.7V to 3.6V 2M word x 16 Bit /4M Byte x 8 Bit switchable Fast access time: 70/80/90ns 20mA maximum active current

mx29lw321

Contextual Info: ADVANCED INFORMATION MX29LW321T/B 32M-BIT [4M x 8 / 2M x 16] ONLY CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • • • • • • Supply voltage range: 2.7V to 3.6V 2M word x 16 Bit /4M Byte x 8 Bit switchable Fast access time: 70/80/90ns 20mA maximum active current

74LVT16240A

Abstract: SSOP48
Contextual Info: Philips Semiconductors Product specification 3.3V 16-bit inverting buffer/driver 3-State 74LVT16240A FEATURES DESCRIPTION • 16-bit bus interface The 74LVT16240A is a high-perform ance BiCMOS product designed for V qc operation at 3.3V. • 3-State buffers

74LVT162244B

Abstract: SSOP48
Contextual Info: Philips Semiconductors Product specification 3.3V 16-bit buffer/driver with 30£2 termination resistors 3-State 7/n wT1coo/l, D 74LVT162244B FEATURES DESCRIPTION • 16-bit bus interface The 74LVT162244B is a high-perform ance BiCMOS product designed for V c c operation at 3.3V.

Contextual Info: ADVANCED INFORMATION MX69LW322/324T/B 32M-BIT [X8/X16] FLASH AND 2M-BIT/4M-BIT X8/X16 SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85°C