DIODE SR 34 Search Results

si96

Contextual Info: SEMTECH Today*« Rauiki.1 March 18, 1999 RailClamp Low Capacitance TVS Diode Array SR05 TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES RailClamps are surge rated diode arrays designed to protect high speed data intertaces. The SR series has

Contextual Info: PRELIMINARY DATA SHEET 1310 nm FOR LONG HAUL 2.5 Gb/s NX7315 InGaAsP MQW-FP LASER DIODE TOSA 0.6 mW SERIES FEATURES DESCRIPTION • FOR MAN AND LAN APPLICATIONS SDH I-16, SONET OC-48(SR) The NX7315 Series is a 1310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode transmitter

TOSA MQW Laser diode SFP

Abstract: GR-468-CORE NX7312UA NX7312UB STM-16 GR-468-CORE SFP
Contextual Info: PRELIMINARY DATA SHEET 1310 nm FOR LONG HAUL 2.5 Gb/s NX7315 InGaAsP MQW-FP LASER DIODE TOSA 0.6 mW SERIES FEATURES DESCRIPTION • FOR MAN AND LAN APPLICATIONS SDH I-16, SONET OC-48(SR) The NX7315 Series is a 1310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode transmitter

Contextual Info: International SR ectifier Preliminary Data Sheet PD -2.449 HFA320NJ40C Ultrafast, Soft Recovêry Diode HEXFRED LUG TERMINAL ANODE 1 Features LUG TERMNAL ANODE2 Vr = 400V • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters

MSD700

Abstract: MSD7000 1n3600 die
Contextual Info: »Ë~|b3b7S55 | 6367255 □□ 3 0 1 1 4 MOTOROLA t. SC CD I O D E S / O P T O 34C 3811^ oj-o SILICON SWITCHING DIODE DIE continued) sr 1C914 DIE NO. UNE SOURCE — DSD241 This die provides performance equal to or better than that of the following device types:

QSH-030-01-L-D-A

Abstract: QTH-030-01-L-D-A v23816n1018l312a C312 GR-253 V23816-N1018-C312-A V23816-N1018-L312-A
Contextual Info: Fiber Optics 3.3 V, 4-Line LVDS Parallel 2.5 GBd Transponder OC-48 SONET/SDH Short Reach SR up to 2 km V23816-N1018-C312-A V23816-N1018-L312-A Preliminary Data Features • Compliant with existing standards • Compact integrated transponder unit with – FP laser diode transmitter

SHINDENGEN DIODE

Contextual Info: f f iH ü x '/W x y 3 y h V7 Surface Mounting Device ^ —K Schottky Barrier Diode Single Diode IW B tfä c E l D2FS6 OUTLINE DIMENSIONS Case : 2F o-w 60V 1.5A i} J ° ® hV 5» •/JvffiSM D • T j 150TC •PnnsM T l ^ y - y x U U I 1 • SR®S •D C /D C U V A - ?

diode sg 08

Abstract: BL0709-18-349 PB25
Contextual Info: 28mmX28mm LED CLUSTER ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES BL0709-18-349 SUPER BRIGHT RED BLUE SUPER BRIGHT GREEN PRELIMINARY SPEC Description Features HIGH VISIBILITY. The Super Bright Red source color devices are made

Contextual Info: Freescale Semiconductor Advance Information Document Number: MC34981 Rev. 1.0, 7/2013 Single High Side Switch 4.0 mOhm , PWM clock up to 60 kHz 34981 Industrial The 34981 is a high frequency, self-protected 4.0 m RDS(ON) high side switch used to replace electromechanical relays, fuses, and

Contextual Info: Freescale Semiconductor Advance Information Document Number: MC34981 Rev. 2.0, 9/2013 Single High Side Switch 4.0 mOhm , PWM clock up to 60 kHz 34981 Industrial The 34981 is a high frequency, self-protected 4.0 m RDS(ON) high side switch used to replace electromechanical relays, fuses, and

Contextual Info: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BIR-BM13E4G-1-TRS25.5A END-LOOK PACKAGE INFRARED EMITTING DIODE Package Dimensions: 5.7 .224 5.0(.197) 8.6(.34) Features: H2 Anode 1. High radiant power and high radiant intensity. 2. Standard T-1 3/4(5mm)package. H1

Contextual Info: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BIR-BM13E4G-2-TRS25.5A Package Dimensions: END-LOOK PACKAGE INFRARED EMITTING DIODE 5.0 .197 5.7(.224) 8.6(.34) Features: H2 1. High radiant power and high radiant intensity. H1 W2 Anode 2. Standard T-1 3/4(5mm)package.

BIR-BM13E4G-2-TRS25

Abstract: diode W240
Contextual Info: BRIGHT LED ELECTRONICS CORP. BIR-BM13E4G-2-TRS25.5A SINCE 1981 END-LOOK PACKAGE INFRARED EMITTING DIODE z Package Dimensions: 5.0 .197 P2 5.7(.224) 8.6(.34) z Features: H2 1. High radiant power and high radiant intensity. H1 W2 Anode 2. Standard T-1 3/4(5mm)package.

8582

Contextual Info: BRIGHT LED ELECTRONICS CORP. BIR-BM13E4G-1-TRS25.5A SINCE 1981 END-LOOK PACKAGE INFRARED EMITTING DIODE z Package Dimensions: 5.7 .224 5.0(.197) P2 8.6(.34) z Features: H2 Anode 1. High radiant power and high radiant intensity. 2. Standard T-1 3/4(5mm)package.

SIR-34ST3F

Contextual Info: SIR-34ST3F Sensors Infrared light emitting diode, top view type SIR-34ST3F The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking

Contextual Info: ADP1043A Evaluation Board Forward Active Clamp PRD 1168 Reference Design FEATURES Forward Active Clamp with Synchronous rectifier Voltage Feedback Loop Dimensions: 58.4mmx61mm×12mm Half Brick Input Voltage Range: -34V to -60V DC Output Voltage/Current: 18V/6A DC

SIR-341ST3F

Contextual Info: SIR-341ST3F Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide

toy IR remote control circuit diagram

Abstract: Emitting SIR-34ST3F
Contextual Info: SIR-34ST3F Sensors Infrared light emitting diode, top view type SIR-34ST3F The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,

toy IR remote control circuit diagram

Abstract: SIR-341ST3F 940NM data sheet
Contextual Info: SIR-341ST3F Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide

Contextual Info: SIR-34ST3F Sensors Infrared light emitting diode, top view type SIR-34ST3F The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking

diode d502

Abstract: diode Schottky D501
Contextual Info: AN3303 Application note Secondary-side rectification for an LLC resonant converter featuring the SRK2000 Introduction The EVLSRK2000 is a family of demonstration boards designed for the evaluation of the SRK2000 in LLC resonant converters with synchronous rectification SR .

Contextual Info: SIR-34ST3F Sensors Infrared light emitting diode, top view type SIR-34ST3F The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,

SIR-34ST3F

Contextual Info: SIR-34ST3F Sensors Infrared light emitting diode, top view type SIR-34ST3F The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,

Contextual Info: T-1 3mm INFRARED EMITTING DIODE Part Number: L-34F3BT Features Description z Mechanically and spectrally matched to the phototransistor. F3 Made with Gallium Arsenide Infrared Emitting diodes. z RoHS compliant. Package Dimensions Notes: 1. All dimensions are in millimeters (inches).