DIODE SR 304 Search Results

MIE-304G1

Abstract: 840 nm GaAs
Contextual Info: GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-304G1 Package Dimensions The MIE-304G1 is an infrared emitting diode in GaAs Unit : mm inches technology molded in water clear plastic package. ψ3.00 (.118) 5.25 (.207) 1.00 (.040) 4.00

MIE-304A2

Abstract: opto 921 high power infrared led
Contextual Info: AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-304A2 Package Dimensions The MIE-304A2 is a high power infrared eimtting Unit: mm inches diode in GaAs technology with AlGaAs window 3.00 (.118) coating molded in water clear plastic package.

high power infrared led

Abstract: MIE-304A4 Unity Opto Technology
Contextual Info: AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-304A4 Package Dimensions The MIE-304A4 is a high power infrared eimtting Unit: mm inches diode in GaAs technology with AlGaAs window 3.00 (.118) coating molded in water clear plastic package.

MIE-304H4

Contextual Info: GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-304H4 Package Dimensions The MIE-304H4 is a GaAlAs infrared LED having a 3.00 .118 peak wavelength at 850nm molded in water clear Unit : mm (inches ) plastic package. The forward voltage at low current

LL-304IRC2E-003

Contextual Info: LUCKY LIGHT LL-304IRC2E-003 DATA SHEET QC: Part No. ENG: LL- 304IRC2E-003 Spec No. Prepared By: S/N-014IR-X4.2 Page 1 of 4 LUCKY LIGHT Features ♦ ♦ ♦ ♦ Standard T-1 3/4 diameter package viewing angle=20° Infrared Emitting Diode Reliable and rugged

IRAC1166-100W

Abstract: KNB1560 cp5 94v-0 tdk ferrite PQ3535 CP5 94V0 hughes TERMINAL 200-203 PQ3535 PC44 smd diode f4 4d t3.15A/250V IRF22N60K
Contextual Info: 10 Ang Mo Kio Street 65, #03-18 TechPoint, Singapore 569059 Reference Design # 0618 IRAC1166-100W +16V Low-side Smart Rectification 100W Flyback Demo Board User’s Guide by ISRAEL SERRANO 18 August 2006 Rev.1A 18 August 2006 RD#0618 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: 310 252-7105

J-STD-020B

Abstract: VSMF4720 VSMF4720-GS08 VSMF4720-GS18
Contextual Info: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • • 94 8553 DESCRIPTION VSMF4720 is an infrared, 870 nm emitting diode in GaAlAs

VSMF4720

Abstract: VSMF4720-GS08 VSMF4720-GS18
Contextual Info: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability

VSMF4720

Abstract: VSMF4720-GS08 VSMF4720-GS18
Contextual Info: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability

Contextual Info: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability

UPC1298V

Abstract: FU-672PDF-V620M03 FU-672PDF-V620M05 FU-672PDF-V620M06
Contextual Info: TZ7-01-304A 1/6 October 5, 2001 Approved Approved Charged K.Masuda Specification of wavelength monitor integrated DFB-LD module Module type: FU-672PDF-V620Mxx • 4ch for 50GHz spacing, 150GHz range thermally wavelength tunable A B x Date 5.Oct.’01 C D

BPW34 application note

Abstract: APPLICATION NOTE BpW34 lux meter calibration RB94
Contextual Info: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability

op amp 741 model PSpice code

Abstract: op amp 741 model PSpice DC-M4 diode AN4820 MAR 732 an4819 op amp 741 model Spice AN489 8741 substitution BF178
Contextual Info: Application Note 48 November 1991 Using the LTC Op Amp Macromodels Getting the Most from SPICE and the LTC Library Walt Jung INTRODUCTION This application note is an overview discussion of the Linear Technology SPICE macromodel library. It assumes little if any prior knowledge of this software library or its

MOSFET DRIVER DC MOTOR CONTROLLER

Abstract: AN-994 IPS021 IPS021L IRSF3021 IRSF3021L airbag
Contextual Info: Data Sheet No. PD 60068-I IRSF3021 NOTE: For new designs, we recommend IR’s new products IPS021 and IPS021L FULLY PROTECTED POWER MOSFET SWITCH Features • • • • • • • • Product Summary Controlled slew rate reduces EMI Over temperature protection with auto-restart

1kw mosfet

Abstract: 100W DC motor driver airbag
Contextual Info: Data Sheet No. PD 60068-H IRSF3021 FULLY PROTECTED POWER MOSFET SWITCH Features • · · · · · · · Product Summary Controlled slew rate reduces EMI Over temperature protection with auto-restart Linear current-limit protection Active drain-to-source clamp

1kw mosfet

Abstract: IPS021 IPS021L
Contextual Info: Data Sheet No. PD 60069-H IRSF3031 NOTE: For new designs, we recommend IR’s new products IPS021 and IPS021L FULLY PROTECTED POWER MOSFET SWITCH Features • · · · · · · · · Product Summary Controlled slew rate reduces EMI Over temperature protection

Mosfet Sot223

Abstract: to220 pcb footprint MOSFET ESD Rated Power MOSFET SOT-223 Sd pcb IRSF3031L AN-994 IPS021 IPS021L IRSF3031
Contextual Info: Data Sheet No. PD 60069-H IRSF3031 NOTE: For new designs, we recommend IR’s new products IPS021 and IPS021L FULLY PROTECTED POWER MOSFET SWITCH Features • • • • • • • • • Product Summary Controlled slew rate reduces EMI Over temperature protection

a39 zener diode

Contextual Info: MOTORCLA SC IME D I b3b?2S4 00^031? 2 | XSTRS/R F 7 ~ -3 7 - / 3 MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA MTP25IM06E Designer's Data Sheet TM OS IV Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced " E " series of TM O S power M O SFET s is designed to withstand high

Contextual Info: Communication ICs Panel interface for telephones BU8317KV The BU8317KV is a large-scale integrated circuit which enables a serial input /output interface between the key in­ put required for panel boards used in PHS systems, portable telephones, and telephone answering machines and

SZM - 238

Contextual Info: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 238 S 08.12 S Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak forward reverse voltage

smd diode UJ 64 A

Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Contextual Info: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.

6513

Abstract: sanyo lcd
Contextual Info: Ordering number:ENN4424 Monolithic Linear IC LA6512, 6513 High-Voltage Dual Power Operational Amplifiers Overview Package Dimensions LA6512 SIP10F and LA6513 (SIP10) are power operational amplifier ICs capable of withstanding high voltages of ±30 V/1 A and are best suited for such voltage division

L150-022

Abstract: 2674-ADJ LM26745 2674adj LM series voltage regulators ADJ lt 032 b140 ark 3399
Contextual Info: S eptem ber 1998 LM2674 SIMPLE SWITCHER Power Converter High Efficiency 500 mA Step-Down Voltage Regulator General Description F e a tu re s • Efficiency up to 96% ■ Available in S O -8 and 8-pin DIP packages ■ C om puter Design Softw are L M 2 6 7 X M a de S im p le

Contextual Info: International TOR Rectifier PD -5.048 PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA500TD60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces - 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200