DIODE SOT-89 MARKING CODE Search Results

diode sot-89 marking code

Abstract: sot-89 Marking LB marking QE diode marking gg 2a BH SOT-89 Q62702-A77 marking gg sot-89
Contextual Info: • Silicon Switching Diodes SIEMEN S/ SPCL-, ÔS3L.320 OOlbSSÔ fl W Ê Z I P BAW 79 A SEMICONDS 32E D -B AW 79 D r-eS 'U • • • For high-speed switching High breakdown voltage Common cathode Typo Marking Ordering code for versions In bulk Ordering code for

Contextual Info: 3SE D • 6231,350 OQlbSSS S H S I P Silicon Switching Diodes SIEM EN S/ SPCLi SENICONDS • • T-£>3~\{ _ BAW 78 A -BAW 78D Switching applications High breakdown voltage Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape

diode T3 Marking

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.

Contextual Info: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed LM1MA141KT1G LM1MA142KT1G switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

Contextual Info: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Pb−Free Packages are Available

476A diode

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–89 package which is designed for low

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode LM1MA141WAT1G LM1MA142WAT1G This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode LMVL3401T1G This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. Supplied in a Surface Mount package. • Rugged PIN Structure Coupled with Wirebond Construction

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode LMBV3401LT1G This device is designd primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits.Supplied in a surface Mount package. SILICON PIN SWITCHING DIODE

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features LBAS70XLT1G Low forward current High breakdown voltage Guard ring protected Low diode capacitance. 3 APPLICATIONS 1 Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current Guard ring protected Low diode capacitance. LBAS40XLT1G 3 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. Blocking diodes. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for

NTA4153N

Abstract: NTA4153NT1 NTA4153NT1G NTE4153N NTE4153NT1G
Contextual Info: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Pb−Free Packages are Available

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Serise Switching Diodes LBAV99WT1G LBAV99RWT1G Features • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish The LBAV99WT1 is a smaller package, equivalent to the LBAV99LT1. Suggested Applications

Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues Pb-Free Package is Available. Ordering Information 3 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel 1 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAV70WT1G FEATURE ƽSmall plastic SMD package. 3 ƽFor high-speed switching applications. ƽPb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAV70WT1G A4 3000/Tape&Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode This switching diode has the following features: . Low Leakage Current Applications . Medium Speed Switching Times LBAV199LT1G . Pb-Free Package is Available. 3 2 CATHODE 1 ANODE 1 3 CAHODE/ANODE 2 CASE 318–08, STYLE 11

Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes FETURE LMBD2837LT1G LMBD2838LT1G • Pb-Free Package is available. ORDERING INFORMATION Device Marking Shipping A5 3000/Tape&Reel LMBD2837LT3G A5 10000/Tape&Reel LMBD2838LT1G MA6 3000/Tape&Reel LMBD2838LT3G

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode LBAV99LT1G • Pb−Free Package is Available. 3 DEVICE MARKING ORDERING INFORMATION . Device Marking Shipping LBAV99LT1G A7 3000 Tape & Reel LBAV99LT3G A7 10000 Tape & Reel 1 2 2 CATHODE 1 ANODE 3 CAHODE/ANODE

SOT-353 MARKING 8v

Abstract: diode SM 88A MOSFET SC-59 power gs 069 SC-75 sot marking a1 353 marking 118 sot-323 marking 25 SOD-323 6C t marking code sot 23
Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mA, 60 V L2N7002WT1G N–Channel SOT–323 • 3 We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

Contextual Info: LESHAN RADIO COMPANY, LTD. Switching Diode LBAL99LT1G Featrues Pb-Free Package is Available. Ordering Information Device 3 Marking Shipping 1 LBAL99LT1G JF 3000/Tape&Reel LBAL99LT3G JF 10000/Tape&Reel 2 CASE 318–08, STYLE 18 SOT–23 TO–236AB MAXIMUM RATINGS

Contextual Info: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications LBA277T1 High frequency switching z Features 1 Small surface mounting type. 2) High reliability. 1 z Construction Silicon epitaxial planar 2 z Pb-Free package is available SOD–523 Device Marking

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS20HT1G z Pb-Free Package is Available. 1 z Device Marking: JR 1 CATHODE 2 ANODE 2 SOD– 323 MARKING DIAGRAM Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE Pb-Free package is available o MAXIMUM RATINGS TA = 25 C Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA PD 200 mW 1.6 mW/°C TJ, Tstg