DIODE SOD-323 MARKING CODE AD Search Results

Contextual Info: PRELIMINARY DATASHEET 200mW SOD-323 SURFACE MOUNT DEVICE MARKING CODE: Device Type Device Marking BAV19WS S5 BAV20WS S6 BAV21WS S7 Small Outline Flat Lead Plastic Package High Voltage Switching Diode Absolute Maximum Ratings Symbol PD TA = 25°C unless otherwise noted

Contextual Info: TAK CHEONG 200mW SOD-323 SURFACE MOUNT DEVICE MARKING CODE: Device Device Type Marking 1SS355 S4 Small Outline Flat Lead Plastic Package High Speed Switching Diode Absolute Maximum Ratings Symbol PD TSTG TA = 25°C unless otherwise noted Parameter Power Dissipation

sod-323 diode MARKING CODE 4

Contextual Info: PRELIMINARY DATASHEET 200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package Fast Switching Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG DEVICE MARKING CODE: Device Type BAT42WS BAT43WS TA = 25°C unless otherwise noted Parameter

B4 diode surface mount

Contextual Info: TAK CHEONG 200mW SOD-323 SURFACE MOUNT DEVICE MARKING CODE: Small Outline Flat Lead Plastic Package Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG Device Type RB501V-40 TA = 25°C unless otherwise noted Parameter Power Dissipation Units

marking code B3 SOD-323

Abstract: sod323 marking NO
Contextual Info: TAK CHEONG 200mW SOD-323 SURFACE MOUNT DEVICE MARKING CODE: Small Outline Flat Lead Plastic Package Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG Device Type RB551V-30 TA = 25°C unless otherwise noted Parameter Power Dissipation Units

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Hot–Carrier Diodes Schottky Barrier Diode LMDL301T1G These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package

MMVL105GT1

Abstract: MMVL105GT1G
Contextual Info: MMVL105GT1 Preferred Device Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features http://onsemi.com

MMVL3102T1

Abstract: MMVL3102T1G
Contextual Info: MMVL3102T1 Preferred Device Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features • High Q with Guaranteed Minimum Values at VHF Frequencies

SBAS16HT1G

Abstract: BAS16HT1G
Contextual Info: BAS16HT1, SBAS16HT1G Switching Diode Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

MMVL409T1

Abstract: MMVL409T1G
Contextual Info: MMVL409T1 Preferred Device Silicon Tuning Diode These devices are designed for general frequency control and tuning applications. They provide solid−state reliability in replacement of mechanical tuning methods. Features • • • • High Q with Guaranteed Minimum Values at VHF Frequencies

NSR1020MW2T1G

Abstract: NSR1020MW2T3G 5M MARKING CODE SCHOTTKY DIODE
Contextual Info: NSR1020MW2T1G Schottky Barrier Diodes This Schottky Barrier Diode in the SOD−323 package offers extremely low Vf performance. The low forward voltage makes them capable of handling high current in a very small package. The resulting device is ideally suited for application as a blocking diode in

MMVL809T1

Abstract: MMVL809T1G
Contextual Info: MMVL809T1 Silicon Tuning Diode This device is designed for 900 MHz frequency control and tuning applications. It provides solid−state reliability in replacement of mechanical tuning methods. Features • • • • http://onsemi.com Controlled and Uniform Tuning Ratio

NSR1020MW2T1G

Abstract: NSR1020MW2T3G 5M MARKING CODE SCHOTTKY DIODE
Contextual Info: NSR1020MW2T1G Schottky Barrier Diodes This Schottky Barrier Diode in the SOD−323 package offers extremely low Vf performance. The low forward voltage makes them capable of handling high current in a very small package. The resulting device is ideally suited for application as a blocking diode in

Contextual Info: NSR1030MW2T1G Product Preview Schottky Barrier Diodes This Schottky Barrier Diode in the SOD−323 package offers extremely low Vf performance. The low forward voltage makes them capable of handling high current in a very small package. The resulting device is ideally suited for application as a blocking diode in

Contextual Info: NSR1020MW2T1G Schottky Barrier Diodes This Schottky Barrier Diode in the SOD−323 package offers extremely low Vf performance. The low forward voltage makes them capable of handling high current in a very small package. The resulting device is ideally suited for application as a blocking diode in

MMDL914T1G

Abstract: Marking code 5d sod323 SMMDL914T1G
Contextual Info: MMDL914T1G, SMMDL914T1G, MMDL914T3G High-Speed Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

MMDL914T1

Abstract: MMDL914T1G MMDL914T3G
Contextual Info: MMDL914T1 High-Speed Switching Diode Features • Pb−Free Package is Available http://onsemi.com 1 CATHODE MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 V Forward Current IF 200 mA IFM surge 500 mA Peak Forward Surge Current Non−Repetitive Peak Forward Current

Contextual Info: NSR1040MW2T1G Product Preview Schottky Barrier Diodes This Schottky Barrier Diode in the SOD−323 package offers extremely low Vf performance. The low forward voltage makes them capable of handling high current in a very small package. The resulting device is ideally suited for application as a blocking diode in

MMDL301T1G

Contextual Info: MMDL301T1G Silicon Hot-Carrier Diodes Schottky Barrier Diode These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS20HT1G z Pb-Free Package is Available. 1 z Device Marking: JR 1 CATHODE 2 ANODE 2 SOD– 323 MARKING DIAGRAM Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR

MMVL109T1

Abstract: MMVL109T1G
Contextual Info: MMVL109T1 Preferred Device Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid−state reliability in replacement of mechanical tuning methods. Features • • • • High Q with Guaranteed Minimum Values at VHF Frequencies

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode LMVL3401T1G This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. Supplied in a Surface Mount package. • Rugged PIN Structure Coupled with Wirebond Construction

Contextual Info: BAS16H, SBAS16H Switching Diode Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Contextual Info: MMDL914T1G, SMMDL914T1G, MMDL914T3G High-Speed Switching Diode http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS