DIODE SOD-123 MARKING CODE T2 Search Results
DIODE SOD-123 MARKING CODE T2 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ24V |
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Zener Diode, 24 V, SOD-523 | Datasheet | ||
CEZ20V |
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Zener Diode, 20 V, SOD-523 | Datasheet | ||
CEZ36V |
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Zener Diode, 36 V, SOD-523 | Datasheet | ||
CEZ30V |
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Zener Diode, 30 V, SOD-523 | Datasheet | ||
CEZ16V |
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Zener Diode, 16 V, SOD-523 | Datasheet |
DIODE SOD-123 MARKING CODE T2 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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diode sod-123 marking code 120
Abstract: diode sod-123 marking code t2 BA 141 diode
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BAV19W-BAV21W OD-123 OD-123 BAV19W: BAV20W: BAV21W: diode sod-123 marking code 120 diode sod-123 marking code t2 BA 141 diode | |
Contextual Info: SIEMENS • âE3SL05 000^427 74D Silicon Variable Capacitance Diode BB 419 • For VHF tuned circuit applications Type Marking Ordering Code tape and reel BB 419 white 2 Q62702-B499 Pin Configuration Package1) SOD-123 ky- o2 1 i^ i o -1 |
OCR Scan |
E3SL05 Q62702-B499 OD-123 EHA0700I | |
S 187 Siemens
Abstract: MARKING CODE 515 diode marking 515 DIODE T28
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OCR Scan |
Q62702-B607 OD-123 S 187 Siemens MARKING CODE 515 diode marking 515 DIODE T28 | |
sod123 marking siemensContextual Info: Silicon Tuning Diode BB 811 • Frequency range up to 2 GHz; special design for use in TV-sat indoor units Type Marking Ordering code taped Package BB 811 white/T. Q62702-B478 SOD-123 Maximum Ratings Parameter Symbol Value Unit Reverse voltage 30 V Forward current, 7a < 60 °C |
OCR Scan |
Q62702-B478 OD-123 sod123 marking siemens | |
MBR120
Abstract: SOD123FL MBR120LSFT1 MBR120LSFT3
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MBR120LSFT1 r14525 MBR120LSFT1/D MBR120 SOD123FL MBR120LSFT1 MBR120LSFT3 | |
MBR140SFT1
Abstract: MBR140SFT3 SOD-123LF
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MBR140SFT1 r14525 MBR140SFT1/D MBR140SFT1 MBR140SFT3 SOD-123LF | |
MARKING L3L
Abstract: MSC 0036 MBR130LSFT1 code l3l
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MBR130LSFT1 OD-123 MBR130LSFT1/D MARKING L3L MSC 0036 MBR130LSFT1 code l3l | |
L2ED
Abstract: MBR120ESFT1 MBR120ESFT3
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MBR120ESFT1 r14525 MBR120ESFT1/D L2ED MBR120ESFT1 MBR120ESFT3 | |
MBR140SFT1
Abstract: MBR140SFT3
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MBR140SFT1 OD-123 MBR140SFT1/D MBR140SFT1 MBR140SFT3 | |
Contextual Info: SG S -T H O M S O N s m 6T 6V 8, a /22 o , a SM 6T6V8C,CA/220C,CA TRANSIL FEATURES • PEAK PULSE POWER= 600 W @ 1ms. ■ BREAKDOWN VOLTAGE RANGE : From 6V8 to 220 V. ■ UNI AND BIDIRECTIONAL TYPES. ■ LOW CLAMPING FACTOR. ■ FAST RESPONSE TIME: Tclamping : 1ps 0 V to VBR . |
OCR Scan |
CA/220C | |
MBR140SF
Abstract: L4f marking marking L4F
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MBR140SFT1 OD-123 38x38 MBR140SF L4f marking marking L4F | |
Contextual Info: MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection |
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MBR120ESFT1 OD-123 38x38 | |
Contextual Info: MBR120VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection |
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MBR120VLSFT1 OD-123 38x38 | |
Contextual Info: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection |
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MBR120LSFT1 OD-123 38x38 | |
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diode e4fContextual Info: MBR140ESF, NRVB140ESF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection |
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MBR140ESF, NRVB140ESF MBR140ESF/D diode e4f | |
Contextual Info: MBR120VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection |
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MBR120VLSFT1 MBR120VLSFT1/D | |
Contextual Info: MBR140ESF, NRVB140ESF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection |
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MBR140ESF, NRVB140ESF MBR140ESF/D | |
Contextual Info: MBR140ESF, NRVB140ESF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection |
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MBR140ESF, NRVB140ESF MBR140ESF/D | |
MBR120VLSFT1G
Abstract: MBR120VLSFT3G MBR120VLSFT1 MBR120VLSFT3
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MBR120VLSFT1 OD-123 MBR120VLSFT1/D MBR120VLSFT1G MBR120VLSFT3G MBR120VLSFT1 MBR120VLSFT3 | |
Contextual Info: MBR120ESFT1G, NRVB120ESFT1G, MBR120ESFT3G, NRVB120ESFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high |
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MBR120ESFT1G, NRVB120ESFT1G, MBR120ESFT3G, NRVB120ESFT3G MBR120ESFT1/D | |
MBR120LSFT1
Abstract: MBR120LSFT1G MBR120LSFT3 MBR120LSFT3G Diode SOd-123 marking cu
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MBR120LSFT1 OD-123 MBR120LSFT1/D MBR120LSFT1 MBR120LSFT1G MBR120LSFT3 MBR120LSFT3G Diode SOd-123 marking cu | |
Contextual Info: MBR120ESF, NRVB120ESF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection |
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MBR120ESF, NRVB120ESF OD-123 MBR120ESFT1/D | |
MBR120Contextual Info: MBR120ESFT1G, NRVB120ESFT1G, MBR120ESFT3G, NRVB120ESFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high |
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MBR120ESFT1G, NRVB120ESFT1G, MBR120ESFT3G, NRVB120ESFT3G OD-123 MBR120ESFT1/D MBR120 | |
NRVB140SFContextual Info: MBR140SF, NRVB140SF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection |
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MBR140SF, NRVB140SF OD-123 MBR140SFT1/D |