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    DIODE SOD-123 MARKING CODE 26 Search Results

    DIODE SOD-123 MARKING CODE 26 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA
    Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) PDF Buy
    54LS190/BEA
    Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) PDF Buy
    MG80C186-10/BZA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) PDF Buy
    ICM7555MTV/883
    Rochester Electronics LLC ICM7555MTV/883 - Dual marked (5962-8950303GA) PDF Buy
    MQ80C186-10/BYA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) PDF Buy

    DIODE SOD-123 MARKING CODE 26 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CT25

    Abstract: Q62702-B499 marking code BB Diode
    Contextual Info: BB 419 Silicon Variable Capacitance Diode ● BB 419 For VHF tuned circuit applications Type Marking Ordering Code tape and reel BB 419 white 2 Q62702-B499 Pin Configuration Package1) SOD-123 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR


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    Q62702-B499 OD-123 CT25 Q62702-B499 marking code BB Diode PDF

    tp 127

    Abstract: Code sod-123 on semiconductor
    Contextual Info: BAS85W SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • Voltage clamping • Protection circuits 1 Cathode 2 Anode 2 1 MB Top View Marking Code: "MB" Simplified outline SOD-123 and symbol Absolute Maximum Ratings Ta = 25 OC


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    BAS85W OD-123 OD-123 tp 127 Code sod-123 on semiconductor PDF

    diode marking 74 SOD123

    Abstract: diode sod-123 marking code b3 schottky diode sod-123 marking code 120 sod123 B3 diode sod-123 marking code 120 ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
    Contextual Info: MBR0530T1, MBR0530T3 Preferred Devices Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR0530T1, MBR0530T3 OD-123 OD-123 diode marking 74 SOD123 diode sod-123 marking code b3 schottky diode sod-123 marking code 120 sod123 B3 diode sod-123 marking code 120 ON SEMICONDUCTOR MARKING DIAGRAM SOD-123 PDF

    JS SOD123

    Abstract: ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
    Contextual Info: MMSD103T1 Preferred Device High Voltage Switching Diode MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 Vdc Peak Forward Current IF 200 mAdc IFM surge 625 mAdc Characteristic Symbol Value Unit Forward Power Dissipation, FR−5 Board (Note 1.) @ TA = 25°C


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    MMSD103T1 JS SOD123 ON SEMICONDUCTOR MARKING DIAGRAM SOD-123 PDF

    schottky diode sod-123 marking code 120

    Abstract: MARKING S3 Marking "s3" Schottky barrier diode sod-123 marking code 120
    Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR130T1, MBR130T3 OD-123 1085C/W OD-123 schottky diode sod-123 marking code 120 MARKING S3 Marking "s3" Schottky barrier diode sod-123 marking code 120 PDF

    MBR130T1

    Abstract: MBR130T1G MBR130T3 MBR130T3G
    Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR130T1, MBR130T3 OD-123 MBR130T1/D MBR130T1 MBR130T1G MBR130T3 MBR130T3G PDF

    diode marking 74 SOD123

    Abstract: schottky diode sod-123 marking code 120 schottky diode sod-123 marking code 12 MBR0530T1 MBR0530T3 diode sod-123 marking code 120
    Contextual Info: MBR0530T1, MBR0530T3 Preferred Devices Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR0530T1, MBR0530T3 r14525 MBR0530T1/D diode marking 74 SOD123 schottky diode sod-123 marking code 120 schottky diode sod-123 marking code 12 MBR0530T1 MBR0530T3 diode sod-123 marking code 120 PDF

    Diode SOd-123 marking cu

    Abstract: MBR130T1 MBR130T3 Marking "s3" Schottky barrier
    Contextual Info: MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR130T1, MBR130T3 r14525 MBR130T1/D Diode SOd-123 marking cu MBR130T1 MBR130T3 Marking "s3" Schottky barrier PDF

    MBR130T1G

    Abstract: MBR130T3G
    Contextual Info: MBR130T1G, NRVB130T1G, MBR130T3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR130T1G, NRVB130T1G, MBR130T3G OD-123 MBR130T1/D MBR130T1G PDF

    SOD-123LF

    Abstract: MBR120VLSFT1 MBR120VLSFT1G MBR120VLSFT3 MBR120VLSFT3G
    Contextual Info: MBR120VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR120VLSFT1 OD-123 SOD-123LF MBR120VLSFT1 MBR120VLSFT1G MBR120VLSFT3 MBR120VLSFT3G PDF

    SOD-123LF

    Abstract: MBR120LSFT1 MBR120LSFT1G MBR120LSFT3 MBR120LSFT3G SOD-123FL
    Contextual Info: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR120LSFT1 OD-123 SOD-123LF MBR120LSFT1 MBR120LSFT1G MBR120LSFT3 MBR120LSFT3G SOD-123FL PDF

    MBR140SFT1

    Abstract: MBR140SFT3 SOD-123LF
    Contextual Info: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR140SFT1 r14525 MBR140SFT1/D MBR140SFT1 MBR140SFT3 SOD-123LF PDF

    MARKING L3L

    Abstract: MSC 0036 MBR130LSFT1 code l3l
    Contextual Info: MBR130LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR130LSFT1 OD-123 MBR130LSFT1/D MARKING L3L MSC 0036 MBR130LSFT1 code l3l PDF

    L2ED

    Abstract: MBR120ESFT1 MBR120ESFT3
    Contextual Info: MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR120ESFT1 r14525 MBR120ESFT1/D L2ED MBR120ESFT1 MBR120ESFT3 PDF

    NRVB1H100SFT3G

    Abstract: ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
    Contextual Info: MBR1H100SFT3G, NRVB1H100SFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123FL Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR1H100SFT3G, NRVB1H100SFT3G OD-123FL MBR1H100SF/D ON SEMICONDUCTOR MARKING DIAGRAM SOD-123 PDF

    transil 428

    Contextual Info: SGS-THOMSON M ^©iy! gïïM KiO(gi sm4T6V8, A/220, a SM4T6V8C,CA/220C,CA TRANSIL FEATURES . PEAK PULSE POWER= 400 W @ 1ms. • BREAKDOWN VOLTAGE RANGE : From 6V8 to 220 V. ■ UNI AND BIDIRECTIONAL TYPES. . LOW CLAMPING FACTOR. ■ FAST RESPONSE TIME: Tclamping : 1ps (0 V to VBR).


    OCR Scan
    CA/220C transil 428 PDF

    Contextual Info: SG S -T H O M S O N s m 6T 6V 8, a /22 o , a SM 6T6V8C,CA/220C,CA TRANSIL FEATURES • PEAK PULSE POWER= 600 W @ 1ms. ■ BREAKDOWN VOLTAGE RANGE : From 6V8 to 220 V. ■ UNI AND BIDIRECTIONAL TYPES. ■ LOW CLAMPING FACTOR. ■ FAST RESPONSE TIME: Tclamping : 1ps 0 V to VBR .


    OCR Scan
    CA/220C PDF

    Contextual Info: MBR1H100SFT3G, NRVB1H100SFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123FL Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR1H100SFT3G, NRVB1H100SFT3G 123FL MBR1H100SF/D PDF

    Contextual Info: MBR2H100SFT3G, NRVB2H100SFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123FL Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR2H100SFT3G, NRVB2H100SFT3G 123FL MBR2H100SF/D PDF

    MBR140SF

    Abstract: L4f marking marking L4F
    Contextual Info: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR140SFT1 OD-123 38x38 MBR140SF L4f marking marking L4F PDF

    Contextual Info: MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR120ESFT1 OD-123 38x38 PDF

    MBR0530T1G

    Abstract: diode sod-123 marking code b3 NRVB0530T3G
    Contextual Info: MBR0530T1G, NRVB0530T1G, MBR0530T3G, NRVB0530T3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package The MBR0530T1/3 uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity


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    MBR0530T1G, NRVB0530T1G, MBR0530T3G, NRVB0530T3G OD-123 MBR0530T1/3 MBR0530T1/D MBR0530T1G diode sod-123 marking code b3 PDF

    Contextual Info: MBR120VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR120VLSFT1 OD-123 38x38 PDF

    Contextual Info: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


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    MBR120LSFT1 OD-123 38x38 PDF