DIODE SMD FOOTPRINT Search Results
DIODE SMD FOOTPRINT Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| BLM15PX330BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 33ohm POWRTRN | |||
| BLM15PX600SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 60ohm POWRTRN | |||
| BLM21HE601SN1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 600ohm NONAUTO | |||
| BLM21HE472BH1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 4700ohm POWRTRN | |||
| BLM15PX330SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 33ohm POWRTRN |
DIODE SMD FOOTPRINT Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: NTHD3101F Power MOSFET and Schottky Diode −20 V, Fetky, P−Channel, −3.2 A, with 2.2A Schottky Barrier Diode, ChipFET] Features • • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package Leadless SMD Package Provides Great Thermal Characteristics |
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NTHD3101F Dra17. | |
smd marking DA QT
Abstract: 24W16 C2608 SMD mosfet MARKING code TJ NTHD3133PFT1G
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NTHD3133PF NTDH3133PF/D smd marking DA QT 24W16 C2608 SMD mosfet MARKING code TJ NTHD3133PFT1G | |
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Contextual Info: NTHD3133PF Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features •ăLeadless SMD Package Featuring a MOSFET and Schottky Diode •ă40% Smaller than TSOP-6 Package •ăLeadless SMD Package Provides Great Thermal Characteristics |
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NTHD3133PF NTDH3133PF/D | |
LBAS516T1GContextual Info: LESHAN RADIO COMPANY, LTD. High-speed Diode DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology and encapsulated in the SOD523 SC79 SMD plastic package. LBAS516T1G S-LBAS516T1G FEATURES • Ultra small plastic SMD package |
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LBAS516T1 OD523 LBAS516T1G S-LBAS516T1G OD-523 AEC-Q101 LBAS516T1G | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. High-speed Diode DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology,and encapsulated LBAS516T1G in the SOD523 SC79 SMD plastic package. 1 FEATURES • Ultra small plastic SMD package · High switching speed: max. 4 ns |
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LBAS516T1 LBAS516T1G OD523 OD-523 LBAS516T3G | |
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Contextual Info: Formosa MS SMD Zener Diode MMSZ5221B THRU MMSZ5267B List List. 1 Package outline. 2 |
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MMSZ5221B MMSZ5267B MIL-STD-202F METHOD-208 MIL-STD-750D METHOD-1038 JESD22-A102 METHOD-1051 1000hrs. | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. High-speed diode LBAS516T1G DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD523 SC79 SMD plastic package. 1 2 FEATURES • Ultra small plastic SMD package · High switching speed: max. 4 ns |
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LBAS516T1G LBAS516T1 OD523 OD-523 LBAS516T3G | |
BAS116HContextual Info: BAS116H 75 V, low leakage diode in small SOD123F package Rev. 01 — 11 April 2005 Product data sheet 1. Product profile 1.1 General description Low leakage switching diode, encapsulated in a SOD123F small SMD plastic package. 1.2 Features • Small and flat lead SMD plastic package |
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BAS116H OD123F BAS116H | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. High-speed diode LBAS516T1G DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD523 SC79 SMD plastic package. 1 2 FEATURES • Ultra small plastic SMD package · High switching speed: max. 4 ns |
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LBAS516T1G LBAS516T1 OD523 OD523 SC-79 LBAS516T | |
BAS116HContextual Info: BAS116H 75 V, low leakage diode in small SOD123F package Rev. 02 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description Low leakage switching diode, encapsulated in a SOD123F small SMD plastic package. 1.2 Features Small and flat lead SMD plastic package |
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BAS116H OD123F BAS116H | |
NTHD4P02F
Abstract: NTHD4P02FT1 NTHD4P02FT1G
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NTHD4P02F NTHD4P02F/D NTHD4P02F NTHD4P02FT1 NTHD4P02FT1G | |
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Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal |
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NTHD4P02F NTHD4P02F/D | |
NTHD4P02FT1GContextual Info: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal |
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NTHD4P02F otherwi18. NTHD4P02FT1G | |
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Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal |
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NTHD4P02F NTHD4P02F/D NTHD4P02F | |
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Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal |
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NTHD4P02F NTHD4P02F/D | |
NTHD3101FT1G
Abstract: NTHD3101F NTHD3101FT1 TL82
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NTHD3101F NTHD3101F/D NTHD3101FT1G NTHD3101F NTHD3101FT1 TL82 | |
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Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal • |
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NTHD4P02F NTHD4P02F/D | |
NTHD4N02F
Abstract: NTHD4N02FT1 NTHD4N02FT1G ChipFET
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NTHD4N02F NTHD4N02F/D NTHD4N02F NTHD4N02FT1 NTHD4N02FT1G ChipFET | |
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Contextual Info: NTHD3101F Power MOSFET and Schottky Diode −20 V, FETKYt, P−Channel, −4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package |
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NTHD3101F NTDH3101F/D | |
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Contextual Info: NTHD3101F Power MOSFET and Schottky Diode −20 V, Fetky, P−Channel, −4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt Features • • • • • • • http://onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package |
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NTHD3101F NTDH3101F/D | |
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Contextual Info: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.9 A, N−Channel, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals |
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NTHD4N02F NTHD4N02F/D | |
NTHD4N02F
Abstract: NTHD4N02FT1 NTHD4N02FT1G 5M MARKING CODE SCHOTTKY DIODE
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NTHD4N02F NTHD4N02F/D NTHD4N02F NTHD4N02FT1 NTHD4N02FT1G 5M MARKING CODE SCHOTTKY DIODE | |
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Contextual Info: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 2.7 A, N−Channel, with 1.0 A Schottky Barrier Diode, ChipFET http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals |
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NTHD4N02F NTHD4N02F/D | |
NTHD3101FT1
Abstract: NTHD3101FT1G NTHD3101F NTHD3101FT3 NTHD3101FT3G
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NTHD3101F NTDH3101F/D NTHD3101FT1 NTHD3101FT1G NTHD3101F NTHD3101FT3 NTHD3101FT3G | |