DIODE SMD CODE SM 97 Search Results

smd code A7t

Abstract: A7T SMD Diode smd diode a7t BAV99 A7t smd
Contextual Info: Philips Semiconductors Product specification High-speed double diode BAV99 FEATURES DESCRIPTION • Sm all plastic SM D package The BAV 99 consists of two high-speed sw itching diodes connected in series, fabricated in planar technology, and encapsulated in the sm all S O T23 plastic SMD

Contextual Info: Philips Semiconductors Product specification High-speed double diode PMBD6100 FEATURES DESCRIPTION • Sm all plastic SM D package The P M B D 6100 consists of tw o high-speed sw itching diodes with com m on cathodes, fabricated in planar technology, and encapsulated

SMD MARKING CODE LP SOT-323

Contextual Info: Philips Semiconductors Product specification High-speed double diode BAV70W PINNING FEATURES DESCRIPTION • V ery sm all plastic SM D package The B A V 70W consists of two high-speed sw itching diodes with com m on cathodes, fabricated in planar technology, and encapsulated

diode smd ED 35

Contextual Info: PRODUCT DATASHEET AAT1401 SwitchRegTM Serial LED Driver with Filtered PWM and 32 Step S2C Dimming Control Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT1401 is a st ep- up single channel LED driver wit h an input volt age range of 2.7V t o 5.5V. The wide input

Contextual Info: PRODUCT DATASHEET AAT1403 SwitchRegTM Serial LED Driver with Filtered PWM and 32 Step S2C Dimming Control Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT1403 is a st ep- up single channel LED driver wit h an input volt age range of 2.7V t o 5.5V. The wide input

Contextual Info: Philips Semiconductors Product specification Low-voltage avalanche regulator double diodes FEATURES MARKING • V ery low dynam ic im pedance at low currents: a pproxim ately 1/ 20 of conventional series TYPE NUMBER • Hard breakdow n knee • Low noise: a pproxim ately 1/ 10 of

mosfet Marking SAs

Abstract: SAs SOT-23 marking Diode smd code sm 97
Contextual Info: PD - 9.1257B International 3BR Rectifier IR L M L 2 4 0 2 PRELIMINARY HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance N-Channel M O S FE T S O T -23 Footprint Low Profile <1.1 mm Available in Tape and Reel

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK12G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK12G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

Contextual Info: SPD 13N05L Infineon technologies w » p f°v e d SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancem ent mode Drain-Source on-state resistance ^DSion Continuous drain current b • Avalanche rated 55 V 0.064

TRANSISTOR SMD MARKING CODE 702

Abstract: 702 Z smd TRANSISTOR 702 Z TRANSISTOR smd TRANSISTOR SMD 702 N 702 H transistor smd smd diode 708 TRANSISTOR SMD MARKING CODE 702 4 702 y smd TRANSISTOR 703 TRANSISTOR smd 702 TRANSISTOR smd
Contextual Info: Infineo n |m p ,° v e d technologies f c — BUZ 104SL • SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vds • Enhancement mode Drain-Source on-state resistance f l DS on • Avalanche rated Continuous drain current

Contextual Info: SIEMENS SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • W orldw ide best Ros on in TO-251 and TO -252 • Ultra low gate charge • Periodic avalanche proved • Extrem e d v/d t rated • O ptim ized capacitances

SMD MARKING CODE C17

Abstract: MARKING MON sot-23 smd diode marking hg marking code 6c SMD IRLMSS703 l00a HG marking sot23
Contextual Info: PD 9.1540 International I G R Rectifier I IR L M S 1 9 0 2 PRELIMINARY HEXFET Power MOSFET Generation V Technology Micro6 Package Style Ultra Low Rds on N-Channel MOSFET Voss = 20V ^D S(on) = 0 .1 0 Q Description Fifth Generation HEXFETs from International Rectifier

mosfet smd code pq

Abstract: motorola diode smd 35v smd TRANSISTOR code YW RECTIFIER 638 MOTOROLA
Contextual Info: ' i , r 19- 1313; Rev 0, 11/97 jy \j\y L \jy \ •Down Controller with for CPU Power The switching frequency is pin-selectable for 300kHz, 600kHz, or 1MHz. High switching frequencies allow the use of a small surface-mount inductor and decrease out­ put filter capacitor requirements, reducing board area

Contextual Info: In fin eon SPD30P06P SPU30P06P Preliminary data technologies SIPMOS Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS • Enhancement mode Drain-Source on-state resistance ñ DS on • Avalanche rated Continuous drain current

MARKING tAN SOT-23

Abstract: Lm 304 PN MARKING tAN SOT-23 diode diode smd yw diode SMD MARKING CODE yw l6302 smd SOT23 diode marking 2F st smd diode marking code ex st smd diode marking code "LE" smd diode marking LM
Contextual Info: PD - 9.1258B International TSR Rectifier IRLML2803 PRELIMINARY HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1 mm Available in Tape and Reel Fast Switching

Contextual Info: bOE î> m ñ235bOS DDMSSM^ T5Ü « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF TEMPFET • • • • • BTS 136 VDS = 50 V, /D = 27 A, flDS on = 0.05 Q N-channel, enhancem ent mode Tem perature sen sor with th yristo r ch a ra cte ristic Plastic package 14A3 in acc. with DIN 41869 or

smd TRANSISTOR code marking 2F

Abstract: TRANSISTOR SMD MARKING CODE X D TRANSISTOR SMD MARKING CODE 2.T transistor smd code marking tm om SMD CODE MARKING SMD Transistor Marking Code Nt TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE kh TRANSISTOR SMD MARKING CODE RE 34 transistor SMD MARKING CODE HF
Contextual Info: PD -20602 rev. B 01/2000 HFA06TB120S. Series TM HEXFRED Ultrafast, Soft Recovery Diode Features BASE + 2 N/C Benefits VR = 1200V VF(typ.)* = 2.4V (K) • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche

M7461

Contextual Info: PD-9.1267F International IO R Rectifier IRF7504 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual P-Channel MOSFET • Very Small SOIC Package • Low Profile <1.1 mm • Available in Tape & Reel • Fast Switching

SMD Transistor t30

Abstract: transistor SMD t30
Contextual Info: SPP 30N03L Infineon technologie» SIPMOS Power Transistor Product Summary Features V 30 Drain source voltage '/ ds • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.018 n 30 A h • N channel • Logic Level

13N05L

Abstract: SPD13N05L P-TO251-3-1 P-TO252 Q67040-S4116-A2 SPU13N05L 13N05
Contextual Info: SPD 13N05L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.064 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 12.5 A • Logic Level • dv/dt rated

Siemens DIODE E 1220

Contextual Info: SIEMENS SPP30N03L SPB30N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type SPP30N03L Vds 30 V b 30 A SPB30N03L ffDS on @ VGS 0.028 O V/gs = 4.5V

BUZ104SL

Abstract: E3045 Q67040-S4006-A2
Contextual Info: BUZ 104SL SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.064 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 12.5 A • Logic Level • dv/dt rated

EI - 33A TRANSFORMER

Contextual Info: PD - 9.1613 International lö R Rectifier IRF7413A PRELIMINARY HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching V qss = 30V

Contextual Info: PD 9.1414A International IO R Rectifier IR L M S 6 7 0 2 PRELIMINARY HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channei MOSFET . * «1 : n V q ss J f , * *| O'— JJ — G ~ iJ L-f~ s = -20V ^ D S (o n ) =