DIODE SMD 86 Search Results

SMD MARKING 541 DIODE

Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET L8 book, halfpage M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF

MARKING SMD x9

Abstract: DS1217
Contextual Info: Formosa MS SMD Zener Diode ZGFM103V3B-M THRU ZGFM10330B-M List List. 1 Package outline. 2

Diode smd code cm

Abstract: cfd 10 DTS1005 DSA0041763 Diode smd code ee PerkinElmer light
Contextual Info: D A T A S H E E T CERLED Ceramic Chip SMD SMD – Receiver CFD 10 Photo Pin Diode Description Real surface mount component with a ceramic chip base. The silicon Photo PIN Diode provides the positive side on the front and the negative side on the ceramic contact base.

Low Forward Voltage Diode

Abstract: Diode smd 86 DIODE SMD 88 smd symbols 1PS70SB82 88 diode Marking 85 diode marking 88 smd diode marking smd marking rd
Contextual Info: Diodes SMD Type Schottky barrier double diodes 1PS70SB82;1PS70SB84 1PS70SB85;1PS70SB86 Features Low forward voltage Very small SMD plastic package Low diode capacitance. Absolute Maximum Ratings Ta = 25 Parameter Symbol Min Max Unit Continuous reverse voltage

Contextual Info: Product specification Philips Semiconductors Low-leakage diode BAS45AL FEATURES DESCRIPTION • Continuous reverse voltage: max. 125 V Epitaxial medium-speed switching diode with a low leakage current in a small glass SOD80C SMD package. • Repetitive peak forward current:

DIODE smd marking 702

Abstract: diode smd marking code 421 DIODE SMD MARKING CODE 702 suppressor diode smd 5pha 5pfm 4008 SMD DIODE TV50C110K SMD MARKING CODE 529 308 smd marking
Contextual Info: Comchip SMD Transient Voltage Suppressor SMD Diode Specialist TV50C110-G Thru. TV50C441-G Working Peak Reverse Voltage: 11 to 440 Volts Power Dissipation: 5000 Watts RoHS Device Features DO-214AB SMC -Glass passivated chip. -5000W peak pulse power capability with a

Contextual Info: TSML3710 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC-2 SMD package. Features • SMT IRED with extra high radiant power

J-STD-020B

Contextual Info: VSMG2700 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm RoHS Compliant, Released for Lead Pb -free Solder Process Description VSMG2700 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 SMD package.

TSMG2700

Contextual Info: TSMG2700 Vishay Semiconductors GaAlAs DH Infrared Emitting Diode in SMT Package Description TSMG2700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant

Contextual Info: TSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF4710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant

MAX160

Abstract: TSMF4710-GS08 TSMF4710-GS18
Contextual Info: TSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF4710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant

TEMT3700

Abstract: TSML3710
Contextual Info: TSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC-2 SMD package. Features • • • • • SMT IRED with extra high radiant power

CECC00802

Abstract: J-STD-020B VSML3710 VSML3710-GS08
Contextual Info: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm RoHS Compliant, Released for Lead Pb -free Solder Process Description VSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC-2 SMD package, released for Lead (Pb)-free Reflow Soldering.

318 MARKING DIODE

Abstract: smd rf transistor marking BAT68-04W BAT68-05W BAT68-06W bat68
Contextual Info: Diodes SMD Type Silicon Schottky Diode BAT68-04W,BAT68-05W,BAT68-06W Features For mixer applications in VHF/UHF range For high-speed switching application Absolute M axim um Ratings Ta = 25 Param eter Sym bol Value Unit Diode reverse voltage VR 8 V Forward current

CMBD4150

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBD4150 SILICON PLANAR EPITAXIAL HIGH SPEED DIODE Marking CMBD4150 = D18 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE

Zener diode smd marking f6

Abstract: smd zener diode code B4 smd zener diode code A5 Y5 smd zener smd zener diode code B5 Zener diode smd marking k9 smd diode zener K9 z5 smd zener diode code D5 Zener diode smd marking c6 smd diode MARKING F6
Contextual Info: MM1Z5221B~MM1Z5268B SILICON PLANAR ZENER DIODES PINNING Silicon planar zener diode in a small plastic PIN SMD SOD-123 package DESCRIPTION 1 Cathode 2 Anode Features Total power dissipation: max.500 mW 1 2 Small plastic package suitable for surface mounted design

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBD4150 SILICON PLANAR EPITAXIAL HIGH SPEED DIODE Marking CMBD4150 = D18 PACKAGE OUTLINE DETAILS

smd zener diode code A5

Abstract: smd diode zener K9 Diode smd marking A5 sod-123 smd zener diode code B4 C 5763 Diode smd marking A4 sod-123 MM1Z5268B smd diode code K4 Zener diode smd marking c6 SMD DIODE F6
Contextual Info: MM1Z5221B~MM1Z5268B SILICON PLANAR ZENER DIODES Silicon planar zener diode in a small plastic PINNING SMD SOD-123 package PIN DESCRIPTION 1 Cathode 2 Anode Features • Total power dissipation: max. 500 mW 1 2 • Small plastic package suitable for surface mounted design

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBD4150 SILICON PLANAR EPITAXIAL HIGH SPEED DIODE Marking CMBD4150 = D18 Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 3 ABSOLUTE MAXIMUM RATINGS

SMAL850

Contextual Info: SMAL850 TECHNICAL DATA High Power LED Array, 60 chips, SMD ALGaAs SMAL850 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency AlGaAs diode chips, mounted on an AIN ceramics and covered with clear silicone resin.

Contextual Info: CERLED SMD Chip Detector Photo Pin Diode SR 10 DE -H* *RoHS-Compliant Description Features and Benefits The solder pads provide an excellent heat sink. On special request also available with daylight filter SR10DE-DLF . Ideal for sensor applications. Available on special order in 8 mm blister

TSOP5700TT

Abstract: smd M21 TSAL6400 TSHF5400 TSOP5700 10kW3 bandpassfilter bandfilter 455khz
Contextual Info: TSOP5700 Vishay Semiconductors IR Receiver for High Data Rate PCM at 455kHz Description The TSOP5700 is a miniaturized SMD IR receiver for infrared remote control and IR data transmission. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.The demodulated output signal can directly be decoded by a

HC49-SMD

Abstract: superhet B3569 B3570 HC49 LQFP32 SFE10 TH71111 TH71112 receiver fm
Contextual Info: TH71111 868/915MHz FSK/FM/ASK Single-Conversion Superheterodyne Receiver Features ! ! ! ! ! ! ! Single superhet architecture for low external component count FSK for digital data and FM reception for analog signal transmission FM/FSK demodulation with phase-coincidence demodulator

transistor smd ALG

Abstract: r23 transistor HM79-10100LFTR7 transistor smd ALG 33 HICAL HM00-A5861LF PoE adapter circuit diagrams SMD ZENER DIODE u6 transistor smd ALG c1 SIL6029
Contextual Info: Engineering Prototype Report for EP-86 – 6.6 W Multi-Class Powered Device PD for Power over Ethernet (PoE) Using DPA-Switch (DPA423G) Title Specification Input: 33-57 VDC, Output: 3.3 V / 2.0 A Application PoE Class 2 PD – Including IEEE802.3af Compliant Interface Circuit