DIODE SMD 86 Search Results

Contextual Info: CERLED SMD Chip Detector SMD - Receiver PFD 10 Photo Pin Diode -H* *RohS-conform Description Real surface mount component with a FR4 chip base. The silicon Photo PIN Diode provides the positive side on the front and the negative side on the FR4 contact base.

SMD MARKING 541 DIODE

Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET L8 book, halfpage M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF

MARKING SMD x9

Abstract: DS1217
Contextual Info: Formosa MS SMD Zener Diode ZGFM103V3B-M THRU ZGFM10330B-M List List. 1 Package outline. 2

Diode smd code cm

Abstract: cfd 10 DTS1005 DSA0041763 Diode smd code ee PerkinElmer light
Contextual Info: D A T A S H E E T CERLED Ceramic Chip SMD SMD – Receiver CFD 10 Photo Pin Diode Description Real surface mount component with a ceramic chip base. The silicon Photo PIN Diode provides the positive side on the front and the negative side on the ceramic contact base.

Low Forward Voltage Diode

Abstract: Diode smd 86 DIODE SMD 88 smd symbols 1PS70SB82 88 diode Marking 85 diode marking 88 smd diode marking smd marking rd
Contextual Info: Diodes SMD Type Schottky barrier double diodes 1PS70SB82;1PS70SB84 1PS70SB85;1PS70SB86 Features Low forward voltage Very small SMD plastic package Low diode capacitance. Absolute Maximum Ratings Ta = 25 Parameter Symbol Min Max Unit Continuous reverse voltage

DIODE JS.9 smd

Contextual Info: Schottky Barrier Diode Twin Diode m tm OUTLINE Package : STO-220 DF40SC4 u^hàLÌ°- M 40V m U nit-m m W eight 1.5g (T y p ) 10.2 DA Feature a • SMD < • Tj=150°C 1Tj=150°C • P rrsm 1 P rrs m Rating SMD 1 High lo Rating -Small-PKG 4.7 m Main Use

Contextual Info: Product specification Philips Semiconductors Low-leakage diode BAS45AL FEATURES DESCRIPTION • Continuous reverse voltage: max. 125 V Epitaxial medium-speed switching diode with a low leakage current in a small glass SOD80C SMD package. • Repetitive peak forward current:

DIODE smd marking 702

Abstract: diode smd marking code 421 DIODE SMD MARKING CODE 702 suppressor diode smd 5pha 5pfm 4008 SMD DIODE TV50C110K SMD MARKING CODE 529 308 smd marking
Contextual Info: Comchip SMD Transient Voltage Suppressor SMD Diode Specialist TV50C110-G Thru. TV50C441-G Working Peak Reverse Voltage: 11 to 440 Volts Power Dissipation: 5000 Watts RoHS Device Features DO-214AB SMC -Glass passivated chip. -5000W peak pulse power capability with a

smd diode 2d

Abstract: diode smd 2d DF40SC4 MX 15G smd m7
Contextual Info: Schottky Barrier Diode Twin Diode mtmm DF40SC4 o u t lin e 40V 40A Feature • SMD • SMD • PRRSMÿ7/ ' C 5 > î / x < S l I • P brsm Rating 1 High lo Rating-Small-PKG Main Use • Switching Regulator • DC/DC □ V K —5' • DC/DC Converter • mm. y -A .o A m s s

Contextual Info: TSML3710 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC-2 SMD package. Features • SMT IRED with extra high radiant power

VSMF4710

Abstract: CECC00802 J-STD-020B VSMF4710-GS08 VSMF4710-GS18
Contextual Info: VSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm RoHS Compliant, Released for Lead Pb -free Solder Process Description VSMF4710 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 SMD package.

CECC00802

Abstract: J-STD-020B VSMG3700 VSMG3700-GS08 VSMG3700-GS18
Contextual Info: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm RoHS Compliant, Released for Lead Pb -free Solder Process Description VSMG3700 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 SMD package.

J-STD-020B

Contextual Info: VSMG2700 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm RoHS Compliant, Released for Lead Pb -free Solder Process Description VSMG2700 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 SMD package.

TSMG2700

Contextual Info: TSMG2700 Vishay Semiconductors GaAlAs DH Infrared Emitting Diode in SMT Package Description TSMG2700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant

Contextual Info: TSMG2700 Vishay Semiconductors GaAlAs DH Infrared Emitting Diode in SMT Package Description TSMG2700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant

zener smd diode 101

Abstract: ZENER DIODE t2 201 Zener diode CZRC5348 CZRC5349 CZRC5350 CZRC5351 CZRC5352 CZRC5388 SMD DIODE 517
Contextual Info: COMCHIP Surface Mount Zener Diode SMD DIODE SPECIALIST CZRC5348 Thru CZRC5388 Voltage: 11 - 200 Volts Power: 5.0 Watts Features For surface mounted applications in order to optimize board space Low profile package Glass passivated junction Low inductance Built-in strain relief

Contextual Info: TSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF4710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant

TSML3710-GS08

Contextual Info: TSML3710 Vishay Telefunken GaAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PL–CC–2 SMD package. Features D SMT IRED with extra high radiant power D Low forward voltage

MAX160

Abstract: TSMF4710-GS08 TSMF4710-GS18
Contextual Info: TSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF4710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant

TEMT3700

Abstract: TSML3710
Contextual Info: TSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC-2 SMD package. Features • • • • • SMT IRED with extra high radiant power

BAS45AL

Abstract: bas45
Contextual Info: BAS45AL Low-leakage diode Rev. 5 — 6 August 2010 Product data sheet 1. Product profile 1.1 General description Epitaxial medium-speed switching diode with a low leakage current, encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device SMD package.

Contextual Info: TSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF3710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant

Contextual Info: TSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC-2 SMD package. Features • • • • • SMT IRED with extra high radiant power

Contextual Info: TSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Description TSMG3700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant