DIODE SM 88A Search Results

74AHC1G04

Abstract: 74AHCT1G04 INA 04 74AHC1G04GW 74AHCT1G04GW 74AHC1G04GW AC Philips LQFP PART MARKING CODE 74ahc1g
Contextual Info: P hilips S em ico n d uctors P relim inary sp ecification Inverter 74A H C 1G 04; 74A H C T 1G 04 FEA TUR ES Q U IC K R E F E R E N C E DATA • S ym m etrical output im pedance GN D = 0 V; Tamb = 25 °C; tr = tf < 3.0 ns. T Y P IC A L • High noise im m unity

sc-88a si

Abstract: 74AHC1G08 74AHC1G08GW 74AHCT1G08 74AHCT1G08GW sot353 marking AE
Contextual Info: P hilips S em ico n d uctors P relim inary sp ecification 2-in pu t A N D gate 74A H C 1G 08; 74A H C T 1G 08 FEA TUR ES Q U IC K R E F E R E N C E DATA • S ym m etrical output im pedance GN D = 0 V; Tamb = 25 °C; tr = tf < 3.0 ns. T Y P IC A L • High noise im m unity

74AHC1G02

Abstract: 74AHC1G02GW 74AHCT1G02 74AHCT1G02GW
Contextual Info: P hilips S em ico n d uctors P relim inary sp ecification 2-in pu t NO R gate 74A H C 1G 02; 74A H C T 1G 02 FEA TUR ES Q U IC K R E F E R E N C E DATA • S ym m etrical output im pedance GN D = 0 V; Tamb = 25 °C; tr = tf < 3.0 ns. T Y P IC A L • High noise im m unity

74AHC1G00

Abstract: 74AHC1G00GW 74AHCT1G00 74AHCT1G00GW
Contextual Info: P hilips S em ico n d uctors P relim inary sp ecification 2-in pu t N A ND gate 74A H C 1G 00; 74A H C T 1G 00 FEA TUR ES Q U IC K R E F E R E N C E DATA • S ym m etrical output im pedance GN D = 0 V; Tamb = 25 °C; tr = tf < 3.0 ns. T Y P IC A L • High noise im m unity

74AHC1G32

Abstract: 74AHC1G32GW 74AHCT1G32 74AHCT1G32GW
Contextual Info: P hilips S em ico n d uctors P relim inary sp ecification 2-in pu t O R gate 74A H C 1G 32; 74A H C T 1G 32 FEATURES Q U IC K R E F E R E N C E DATA • S ym m etrical output im pedance GN D = 0 V; Tamb = 25 °C; tr = tf < 3.0 ns. T Y P IC A L • High noise im m unity

74AHC1G125

Abstract: 74AHC1G125GW 74AHCT1G125 AM SOT353 74AHC1G125 PHILIPS MARKING AF SOT353
Contextual Info: P hilips S em ico n d uctors P relim inary sp ecification Bus buffer/line driver; 3-state 74AHC1G125; 74AHCT1G125 FEA TUR ES Q U IC K R E F E R E N C E DATA • S ym m etrical output im pedance GN D = 0 V; Tamb = 25 °C; tr = tf < 3.0 ns. T Y P IC A L • High noise im m unity

IRF250SM

Contextual Info: im if Pi im SEME IRF250SM LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 2.0 3.5 3.5 200V V DSS 0.25 14A I D(cont) 3.0 0.100Û ^D S (on) FEATURES TT • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF

lg diode 88A

Abstract: IRF240SM
Contextual Info: im iF F i mi SEME IRF240SM LAB MECHANICAL DATA Dimensions in mm inches 11.5 («— ► 3.5 1 t ' k 1 r !1 2.0 N-CHANNEL POWER MOSFET -►i — 3.5 4 ¥ 200V V Dss 0.25 13.9A ^D(cont) 3.0 0 .1 8 0 0 ^DS(on) FEATURES 3 • HERMETICALLY SEALED SURFACE MOUNT PACKAGE

Contextual Info: im s ffs n il IRFN140 SEME LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11 s 100 V V Dss 0.25 13.9A ^D(cont) 3.0 r*-H 0 .077G R DS(on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE.

Contextual Info: im i ^ i mi IRF140SM SEME LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 100V 13.9A 0.07712 V DSS 0.25 I D(cont) 3.0 ^DS(on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE.

Contextual Info: ADE-208-046D Z HSM88AS Silicon Schottky Barrier Diode for Balanced Mixer HITACHI Features Rev. 4 Jul. 1994 Pin Arrangement • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. 4 TJz P Ordering Information

Contextual Info: 3 7E SEMELAB LTD 0133107 D QQQQSm Q E G3 1 1987 SEMELAB • x fc BUZ 20 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm u _ 10.3 iu . J wi 13~*1 —* max. .I m 0X- -*]3.6K+|3.6|* m 4.5ma« 5.9 min. , i 15.8 max. L.}.,- APPLICATIONS • DC/DC CONVERTERS

Contextual Info: I ADE-208-047C Z HSM88ASR Silicon Schottky Barrier Diode for Balanced Mixer HITACHI Features Rev. 3 Jul. 1994 Pin Arrangement • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. 4P Ordering Information

PA 0016 PIONEER

Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
Contextual Info: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete

22B4 diode ZENER

Abstract: smk 1350 transistor 88E1111 BCC package SIL1162 LS650 C3333 P33A zener DIODE 5c2 39C6 2N7002DW
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD DRAWING 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN DATE 02 D PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

diode SM 88A

Abstract: FDPF035N06B_F152
Contextual Info: FDPF035N06B_F152 N-Channel PowerTrench MOSFET 60 V, 88 A, 3.5 mΩ Features Description • RDS on = 2.91 mΩ ( Typ.) @ VGS = 10 V, ID = 88 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

ZH510

Abstract: XW604 L9120 M5607 L9140 C4722 L9300 PP9010 ZH610 74LVC1G04DBVG4
Contextual Info: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS

Q8303

Abstract: JD smd diodes C4722 C5807 C8450 p66 apple XTAL 25mhz 50ppm SMC H8S2116 U6700 Socket AM2
Contextual Info: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS

SOT23-5 AE31

Abstract: c9450 ar9350 ZH510 M5621 C4722 FERR-120-OHM-1 6A4 mic DIODE D6905 C8450
Contextual Info: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS

YW 431

Abstract: AN-994 IRFBC40A IRFBC40AS
Contextual Info: PD- 91897A SMPS MOSFET IRFBC40AS HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

AN-994

Abstract: IRFBC40A IRFBC40AS
Contextual Info: PD- 91897A SMPS MOSFET IRFBC40AS HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

diode SM 88A

Contextual Info: PD- 91897 SMPS MOSFET IRFBC40AS HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

Contextual Info: FDPF035N06B N-Channel PowerTrench MOSFET 60 V, 88 A, 3.5 mΩ Features Description • RDS on = 2.91 mΩ ( Typ.) @ VGS = 10 V, ID = 88 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

Contextual Info: FDPF035N06B N-Channel PowerTrench MOSFET 60 V, 88 A, 3.5 mΩ Features Description • RDS on = 2.91 mΩ ( Typ.) @ VGS = 10 V, ID = 88 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining