DIODE SJ 98 Search Results

d 5072 transistor

Abstract: d 5072 1N6171AUS
Contextual Info: SENSITRON SEMICONDUCTOR 1N6138A/US thru 1N6173A/US TECHNICAL DATA DATA SHEET 5072, REV. – SJ SX SV Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C

C 5074 transistor

Contextual Info: SENSITRON SEMICONDUCTOR 1N6102A/US thru 1N6137A/US TECHNICAL DATA DATA SHEET 5074, REV. – SJ SX SV Transient Voltage Suppressor Diode, 500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C

Contextual Info: 1N6108A thru 1N6136A Standard 500W Bi-directional TVS SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5074, REV. C AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT * SJ*, SX*, SV*, SS* Bi-directional Transient Voltage Suppressor Diode, 500W

IPA50R500CE

Abstract: DIODE V10-20 mosfet equivalent IPA50R280CE LLC resonant smps resonant llc full bridge 400W pwm smps schematic SWITCHING bjt 500v IPA50R280C
Contextual Info: Application Note AN 2012-04 V1.0 April 2012 500V CoolMOSTM CE 500V Superjunction MOSFET for Consumer and Lighting Applications IFAT PMM APS SE SL René Mente Francesco Di Domenico 500V CoolMOSTM CE Application Note AN 2012-04 V1.0 April 2012 Edition 2011-02-02

IC 4558 surround sound circuit

Abstract: ILX554 ICX285AL LCX029amt sony led tv electronic diagram LCX017CLT surround circuit using ic 4558 pin diagram composite to GVIF ILX551A GVIF
Contextual Info: FIRST HALF 2 0 0 1 semiconductor product guide Table of Contents CAVD Multimedia Products . . . . . . . . . . . . . . . . . . . . . . . . 2 CCDs Area Sensor — Color . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Area Sensor— Black & White. . . . . . . . . . . . . . . . . . . . . 3

led 5050 rgb datasheet

Abstract: 5050 rgb led GVIF cable ILX511 sony exview camera IC 4558 surround sound circuit CCD LINEAR SENSOR 512 IC PROCESSOR VCT1 ICX205 ccd sony ilx511
Contextual Info: F I R S T Q U A R T E R 2 0 0 0 semiconductor product guide Table of Contents CCDs Area Sensor — Color . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Area Sensor— Black & White. . . . . . . . . . . . . . . . . . . . . 3 Area Sensor — Progressive Scan . . . . . . . . . . . . . . . . . . 4

Contextual Info: TOSHIBA TA78M05,06,0 8 ~ 1 0,12,15,18,20,24F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA78M05F, TA78M06F, TA78M08F, TA78M09F, TA78M10F TA78M12F, TA78M15F, TA78M18F, TA78M20F, TA78M24F 0.5 A THREE TERMINAL POSITIVE VOLTAGE REGULATORS 5 Vf 6 Vf 8 Vf 9 Vf 10 Vf 12 Vf 15 Vf 18 Vf 20 Vf 24 V

IPP50R280Ce

Abstract: IPD50R1K4CE IPD50R380CE IPD50R800CE
Contextual Info: Product Brief Features 500V CoolMOS CE Power MOSFET The CoolMOS™ CE is a new technology platform of Infineon’s market leading high voltage power MOSFETs designed according to the revolutionary superjunction SJ principle. 500V CE portfolio provides all benefits of a fast switching SJ MOSFET while not

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CFD2650VThinpak 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD 1Description

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CFD2650VThinpak 650VCoolMOS™CFD2PowerTransistor IPL65R165CFD DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™CFD2PowerTransistor IPL65R165CFD 1Description

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CFD2650VThinpak 650VCoolMOS™CFD2PowerTransistor IPL65R340CFD DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™CFD2PowerTransistor IPL65R340CFD 1Description

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CFD2650VThinpak 650VCoolMOS™CFD2PowerTransistor IPL65R725CFD DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™CFD2PowerTransistor IPL65R725CFD 1Description

AMMC-6408

Abstract: diode in 5394 HBM W50
Contextual Info: AMMC-6408 6-18 GHz 1W Power Amplifier Data Sheet Chip Size: 2000 x 2000 µm 78.5 x 78.5 mils Chip Size Tolerance: ± 10 µm (±0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) Pad Dimensions: 100 x 100 µm (4 ± 0.4 mils) Description Features The AMMC-6408 MMIC is a broadband 1W power

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS ThinkPAK8x8 650VCoolMOS™E6PowerTransistor IPL65R310E6 DataSheet Rev.2.1 Final Industrial&Multimarket 650VCoolMOS™E6PowerTransistor IPL65R310E6 1Description ThinPAK8x8

5R380CE

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE 500VCoolMOS™CEPowerTransistor IPA50R380CE DataSheet Rev.2.2 Final PowerManagement&Multimarket 500VCoolMOS™CEPowerTransistor IPA50R380CE 1Description TO-220FP

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE 500VCoolMOS™CEPowerTransistor IPx50R1K4CE DataSheet Rev.2.1 Final Industrial&Multimarket 500VCoolMOS™CEPowerTransistor IPD50R1K4CE,IPU50R1K4CE 1Description DPAK

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE 500VCoolMOS™CEPowerTransistor IPx50R2K0CE DataSheet Rev.2.0 Final Industrial&Multimarket 500VCoolMOS™CEPowerTransistor IPD50R2K0CE,IPU50R2K0CE 1Description DPAK

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPL60R650P6S DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPL60R650P6S 1Description ThinPAK5x6

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPL60R180P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPL60R180P6 1Description ThinPAK8x8

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C6650V 650VCoolMOS™C6PowerTransistor IPD65R950C6 DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™C6PowerTransistor IPD65R950C6 1Description DPAK

5R950CE

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE 500VCoolMOS™CEPowerTransistor IPx50R950CE DataSheet Rev.2.1 Final PowerManagement&Multimarket 500VCoolMOS™CEPowerTransistor IPD50R950CE,IPU50R950CE 1Description DPAK

65E6190

Abstract: diode smd E6 smd diode E6 Diode SMD SJ 19 Diode type SMD marking SJ IPW65R190E6 IPP65R190E6 MOSFET TRANSISTOR SMD MARKING CODE 11 smd marking code E6 ipa65r
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6

5R500CE

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE 500VCoolMOS™CEPowerTransistor IPx50R500CE DataSheet Rev.2.1 Final PowerManagement&Multimarket 500VCoolMOS™CEPowerTransistor IPP50R500CE 1Description TO-220 tab

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE 500VCoolMOS™CEPowerTransistor IPA50R650CE DataSheet Rev.2.1 Final PowerManagement&Multimarket 500VCoolMOS™CEPowerTransistor IPA50R650CE 1Description TO-220FP