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TSP70

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B5817W

Abstract: B5818W B5819W Diode SJ Sj diode
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode B5817W-5819W SOD-123 SCHOTTKY BARRIER DIODE FEATURES + For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ

Diode SJ 14

Abstract: DIODE marking Sl B5817WS-5819WS B5818WS B5819WS Diode SJ diode marking SJ B5817WS diode reverse voltage protection B5819WSSL
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817WS: SJ

B5817W-5819W

Abstract: DIODE marking Sl B5819W B5817W B5818W diode reverse voltage protection Schottky Diode 30V 1A SOD123 1A diode low reverse current
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode B5817W-5819W SOD-123 SCHOTTKY BARRIER DIODE FEATURES + For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. - MARKING: B5817W: SJ

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817WS: SJ

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode B5817W-5819W SOD-123 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817WS: SJ

Diode SJ

Abstract: Schottky Diode 30V 1A SOD Schottky Diode 30V 1A SOD123 B5817W B5818W B5819W Silicon Schottky Diode sod123 sl DIODE sod123
Contextual Info: B5817W-B5819W SCHOTTKY BARRIER DIODE PRODUCT SUMMARY SOD-123 Plastic-Encapsulate Diode SOD-123 + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. - Pb-free; RoHS-compliant MARKING: B5817W: SJ B5818W: SK

Contextual Info: Product specification Philips Semiconductors BB901 Variable capacitance diode DESCRIPTION The BB901 is a silicon planar variable capacitance diode in a microminiature SOT23 envelope. It is intended as a tunable coupling diode in VHF all-band tuners. QUICK REFERENCE DATA

Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULE RM400DY-66S -wsi sJ«w'','sa'8 HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE HVDi High Voltage Diode Module RM400DY-66S • ID C . 4 0 0 A • V rrm . 3 3 0 0 V

diode in 5401

Abstract: for APD bias high-voltage 104 Ceramic Disc Capacitors 100v
Contextual Info: TIED87, TIED88, TIED 89 Reference Diode Pairs Texas Optoelectronics, Inc. DESCRIPTION FEATURES These diode pairs consist of an avalanche photodiode APD and a small reference diode that have been manufactured together to ensure close matching of both the breakdown voltages

2SC668

Abstract: 2SC930
Contextual Info: Ordering number : EN684E S V C 2 1 1 S P A Diffused Junction Type Silicon Diode Varactor Diode IOCAP for FM Receiver Electronic Tuning Features - Twin type varactor diode being excellent in large input characteristic and intended for use in highvoltage FM electronic tuning applications.

Contextual Info: î / a y h * - A'UT7S H 'Î-K —KïS'n.—Jb Diode Module Schottky Barrier Diode OUTLINE DIMENSIONS D360SC4M 40V 360A l> US V f ► sjcô '/jv^u > *§ kS R S Ü »DC/DC H C x T .^ ÜfêÉIlfi:«* r s tfi< f i ÿ v>) RATINGS Absolute Maximum Ratings a Item

taser circuit

Abstract: 808 nm 100 mw SLD300 SLD323XT SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-25 SLD323XT-3
Contextual Info: , V J I N Ï I_S L D 3 2 3 X T High Power Density 1 W Laser Diode D escription Unit : mm Package O utline The SLD 323X T is a high power, gain-guided laser diode produced by M OCVD m eth od *1. C om pared to the SLD 300 Series, this laser diode has a high brightness

tsta7500

Contextual Info: Temic TSTA7500 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA7500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO -18 package. Its flat glass window makes it ideal for

diode 1N5819

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate Diode 1N5817, 1N5819 SOT-23-3L SCHOTTKY DIODE - 1. ANODE FEATURES 3.CATHODE + Power dissipation PD : 300 mW Ta=25℃ Collector current IF : 1 A Collector-base voltage VR : 1N5817:

Contextual Info: PD-9.1647 International IQR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a o r- ID K ur * - - 3 g an

SD6150

Contextual Info: WOTOiROiLA Order this document * m sm sSd SEMICONDUCTOR TECHNICAL DATA Dual Diode Common Anode MSD6150 3 Anode Cathode 1 2 Cathode MAXIMUM RATINGS EACH DIODE Rating Symbol Reverse Voltage Total Device Dissipation @ Ta = 25°C Derate above 25°C Operating and Storage Junction

12-C3C5

Contextual Info: -Km&'f*-!* wmsfjwz TV'cm. Rectifier Diode Surface Mounting Device Diode Array I W f N is ia OUTLINE DIMENSIONS S1ZA 600V 1.1 A RATINGS Absolute Maximum Ratings a 1 BÜT? Symbol Conditions Item T /= 2 5 t; - - - BH & — — TjrpeJVIo^ S1ZA20

Diode SJ

Abstract: diode marking SJ marking sj diode SOD-323 diode B5817WS marking V diode SOD MARKING "SJ"
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode B5817WS SCHOTTKY BARRIER DIODE SOD-323 FEATURES + Power dissipation PD: 200 mW Tamb=25℃ Collector current 1 A IF: Collector-base voltage VR: 20 V Operating and storage junction temperature range

5d surface mount diode

Abstract: MMBL914H A12E
Contextual Info: ] 1MMBL914H Surface M ount Switching Diode SWITCHING DIODE 200mAMPERS 100VOLTS Features: ‘ High Speed ^ 4ns ‘ Low Rever Leakage Current ‘ Small Outline Surface Mount SOD-323 Package SOD -323 Outline Dimensions Unit:mm MILLMETERS Dim A B C D E H ,1 K

Diode SJ 44

Contextual Info: SKNa 20 Stud Diode Avalanche Diode SKNa 20 Features # $%&'& *+ ,-.+ /+%+/0+ # # # )*&/&),+/10,1) 2. ,3 4566 7+/8+,1) 8+,&' )&0+ 91,* :'&00 1(02'&,3/ $(3;+ 01;+ ,*/+&;+; 0,2; <=> ? @33'1(: %1& 8+,&' .'&,+0 3/ *+&, 01(A0 =BCD $(3;+ ,3 0,2; MGNOK81( <LO?= Q R6 $

Contextual Info: 5f -f i - K i ' / i - J l ' '>3 7 h * M U T S f - r * - K Schottky Barrier Diode Diode Module O U TLIN E D IM E N S IO N S D180SC6M Case : Modules 60V 180A © © m a l | j •IE V f • SjcöVhSO' ffl ÌÈ • * s y s R « § •D C /D C n v A - 9 • IC

Contextual Info: □ - □ 3 . Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D10LC20U 200V 10A r n y 't'X >trr35ns >SRS;H >^BsOAw0, ^ m iB s F A RATINGS Absolute Maximum Ratings a i s E-fSymbol Conditions a Item Storage Temperature Operating Junction Temperature