DIODE SG 5 Search Results

Contextual Info: HE7601SG GaAIAs IRED Description T he H E 7 6 0 1 SG is a 770 nm band G aA lA s infrared light em itting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors. features Package Type • HE7601SG : SG

S 205T

Contextual Info: SEC LIGHT EMITTING DIODES ELECTRON DEVICE SG205D,SG205T GaP LIGHT EM ITTIN G DIODE GREEN -N EPO C SERIES— DESCRIPTION The SG 205D, SG 205T are Gap Gallium Phosphide Light Emitting Diodes which are mounted on the lead frames and molded in green diffused, green clear plastic respectively. They are ideally suited for front panel indicator applications.

marking sg

Abstract: diode SOD-323 SD107WS SG DIODE MARKING
Contextual Info: SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance 1.30 · ·

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features ０．８５ 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SOD-323 SD107WS FAST SWITCHING DIODES + FEATURES z Low turn-on voltage z Fast switching - MARKING: SG Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

Contextual Info: SG S-TH O M SO N RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ BDX53F BDX54F COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

SMD MARKING CODE sg

Abstract: diode MARKING CODE sg smd diode marking sG MARKING CODE sg 06 diode sg 01 diode smd marking code SG SG DIODE MARKING diode smd code SG sg smd code smd "code rc" transistor
Contextual Info: SB520WT SCHOTTKY BARRIER DIODE Features PINNING • Ultra small SMD package DESCRIPTION PIN • Very low forward voltage 1 Cathode 2 Anode Applications 2 1 • Ultra high speed switching SG RC • Voltage clamping • Low current rectification Top View Top

Contextual Info: £ ÿ j SG S-TH O M SO N D»ilLiœ s R(|D(êS BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu­ ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre­

220v 25a diode bridge

Abstract: TSI62B5 220v 5a diode bridge TSI120 TSI200B5 TSI120B5 TSI150B5 TSI180B5 TSI270B5 sgs marking code
Contextual Info: [= 7 SG S-THO M SO N TSIxxxB5 TELEPHONE SET INTERFACE FEATURES • SINGLE DEVICE PROVIDING : DIODE BRIDGE BIDIRECTIONAL PROTECTION . CROWBAR PROTECTION ■ PEAK PULSE CURRENT: Ipp = 30A, 10/1000 xs . VOLTAGE RANGE FROM 62V to 270V ■ Maximum current: lo = 0.5A

Contextual Info: HE7601SG Description GaAIAs IRED The HE7601SG is a 770 nm band GaAlAs infrared light emitting diode with a double heterojunction struc­ ture. It is suitable as a light source for optical control devices and sensors. features Package Type • HE7601SG: SG

BU810

Contextual Info: S G S -T H O M S O N iM m @ ignnCTisì«ii Sgì BU 810 MEDIUM VOLTAGE NPN FAST-SWITCHING DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON . LOW BASE-DRIVE REQUIREMENTS . FAST SWITCHING SPEED . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

SGS125

Abstract: s125 transistor
Contextual Info: r Z J SGS-TUOMSON Hö i s [liLi©?^ iö©i SG S125 SILICON PNP POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP DARLINGTON . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION . GENERAL PURPOSE SWITCHING DESCRIPTION The SGS125 is a silicon epitaxial-base PNP

SG30TC15M

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE SG 30T C 1 5 M 15 0 V 3 0 A Feature • Tj= 175°C • 7 ; iÆ • Tj=175°C • High lo Rating • Full Molded -,/b F • <£Ir=40|jA • Low Ir=40|jA • U le < l i • igüIÎŒ 2kV{*IŒ • Resistance for thermal run-away

Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE SG 30TC 15M 150V 30A Feature • Tj=150°C • T j= i5 r c • High lo Rating • 7 / iæ - ju ^ • lR = 4 0 p A • Full Molded • Low Ir=40(jA • *& « £ « & : u c < u • Resistance fo r thermal run-away

Contextual Info: '> 3 7 t Schottky Barrier Diode - K Axial Diode OUTLINE DIMENSIONS D1NS6 Case : 0.6 ^ I 2.6 =01 60V 1A i & i a © • T i 15013 o SIE #P h rsm ? J M- D (2 Cathode : Anode ^ Cathode band m j* *}sg]@sr*H2 M arking •S R S S S6 _a 24 -v h ,iii (M) Date code

CB417

Abstract: smd diode Coloured band marked devices Smd code S08 CB429 DIL20 F126 S020 T0220AB SOD-6 DIMENSIONS CB417
Contextual Info: LVT3V3 SMLVT3V3 / = T SG S-THO M SO N * * œ ^ M 0 M ( § s TRANSIL FEATURES • ■ ■ ■ ■ UNDIRECTIONAL TRANSIL DIODE. PEAK PULSE POWER= 600 W @ 1ms. REVERSE STAND OFF VOLTAGE = 3.3 V. LOW CLAMPING FACTOR. FAST RESPONSE TIME: Tclamping : 1ps (0 V to VBR -

ic 2 bo 565

Abstract: SG206T
Contextual Info: NEC LIGHT EMITTING ELECTRON DEVICE DIODE SG206D,206T GaP LIGHT EMITTING DIODE - N E P O C S E R IE S - D ESC R IP T IO N The SG206D, SG 206T are GaP Gallium Phosphide Light Emitting Diodes which are mounted on the lead frames and molded in green diffused, green clear plastic respectively. They are ideally suited for front panel indicator applications.

SG40TC10M

Abstract: schottky diode marking A7 marking c1j c1j marking
Contextual Info: Schottky Barrier Diode mtm OUTLINE Twin Diode SG 40TC 1OM 100 V 40 A Feature • Tj=175°C • Full Molded • Tj=175°C • IS I r =60|j A • • L o w Ir = 6 0 | j A • Resistance for thermal run-away • Dielectric Strength 2kV U 1C < 11 • ig iU ÎŒ 2kV«IŒ

FTO-220G

Abstract: J533 J533-1
Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE SG 40 T C 1 2 M U n it : m m Package I FTO-220G Weight J.54g Typ o v h i j y iw ! ) 120V 40A 4.5 Feature • T j=175°C • T j= 1 7 S f C • y jis t- ib • Full M olded K • I r=60^A • Low lR=60pA • * W I Æ ® e ï: U C C IA

Diode MARKING S37

Abstract: transient voltage suppressor diode LDP24AS DTR7637 DIODE MARKING CODE 623
Contextual Info: r= 7 SG S-TtfO M SO N * 7 £ [M M iL E g ïM O g S LDP24AS TRANSIL LOAD DUMP PROTECTION FEATURES • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION ■ HIGH SURGE CURRENT CAPABILITY : 40 A / 40 ms EXPONENTIAL WAVE ■ COMPLIANT WITH MAIN STANDARDS

Contextual Info: HI TAC HI/ OPTOELECTRONICS S^E D MM T b SG S D0120L42 HL7838G •HIT4 GaAIAs LD Description The HL7838G is a 0.78 pm band GaAIAs laser diode with a double heterojunction structure and is appro­ priate as the light source for various optical application devices, including laser beam printers and laser

Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE SG 20TC1OM 100V 20A Feature • • • • • • T j= i5 r c • 7 J IÆ -J U K • (S lR = 3 0 p A • j r iiìè s b c u c < u •« » W Œ 2 k V S S I Tj=150°C Full Molded Low lR=30pA Resistance for thermal run-away

motorola opto

Abstract: 1N914 MMCFD914 38192
Contextual Info: 34 MOTOROLA SG iDIODES /OP TO l ¿T|h3t,7ESS GDBflna 4 T " 6367255 M O T O R O L A SC DIODES/OPTO 34C 38192 MMCFD914 FLIP-CHIP SW ITCHING DIO DE F lip -C h ip diode for high-speed switching applications with performance similar to the 1N914. Primary Electrical Features: