DIODE SG 5 Search Results

diode MARKING CODE sg

Abstract: marking code SG diode sg 03 sg diode code marking MARKING CODE sg 06 SG DIODE RB520S-30 MARKING SG diode marking sg code sg
Contextual Info: RB520S-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification and High Speed Switching Applications Features PINNING • Extremely small surface mounting type. DESCRIPTION PIN • High reliability. 1 Cathode 2 Anode 2 1 SG Top View Marking Code: "SG"

Contextual Info: HE7601SG GaAIAs IRED Description T he H E 7 6 0 1 SG is a 770 nm band G aA lA s infrared light em itting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors. features Package Type • HE7601SG : SG

S 205T

Contextual Info: SEC LIGHT EMITTING DIODES ELECTRON DEVICE SG205D,SG205T GaP LIGHT EM ITTIN G DIODE GREEN -N EPO C SERIES— DESCRIPTION The SG 205D, SG 205T are Gap Gallium Phosphide Light Emitting Diodes which are mounted on the lead frames and molded in green diffused, green clear plastic respectively. They are ideally suited for front panel indicator applications.

marking sg

Abstract: diode SOD-323 SD107WS SG DIODE MARKING
Contextual Info: SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance 1.30 · ·

BAR19

Contextual Info: C T SG S-TH O M SO N ^ 7 # . HDlgœilLIgTOOIfSlDgi BAR 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE RATINGS limiting values Repetitive Peak Reverse Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features ０．８５ 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications

Contextual Info: /= T SG S-TH O M SO N BAT 41 SMALL SIGNAL SCHO I IKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against ex­ cessive voltage such as electrostatic discharges.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SOD-323 SD107WS FAST SWITCHING DIODES + FEATURES z Low turn-on voltage z Fast switching - MARKING: SG Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

Contextual Info: SG S-TH O M SO N RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ BDX53F BDX54F COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

ESM3030DV

Contextual Info: SG S-TH O M SO N RülDigœilLIg'iriûiDeS ESM3030DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS . EASY TO MOUNT

ESM4045DV

Contextual Info: SG S-TH O M SO N ESM4045DV NPN DARLINGTON POWER MODULE . . . . . . . HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R,h JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

SMD MARKING CODE sg

Abstract: diode MARKING CODE sg smd diode marking sG MARKING CODE sg 06 diode sg 01 diode smd marking code SG SG DIODE MARKING diode smd code SG sg smd code smd "code rc" transistor
Contextual Info: SB520WT SCHOTTKY BARRIER DIODE Features PINNING • Ultra small SMD package DESCRIPTION PIN • Very low forward voltage 1 Cathode 2 Anode Applications 2 1 • Ultra high speed switching SG RC • Voltage clamping • Low current rectification Top View Top

Contextual Info: £ ÿ j SG S-TH O M SO N D»ilLiœ s R(|D(êS BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu­ ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre­

ByV schottky

Contextual Info: C T SG S-TH O M SO N ^T/.llD lgœ ilLIgTrœ M gi BYV10-20A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu­ ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre­

220v 25a diode bridge

Contextual Info: rZ J SG S-THOM SO N TSIxxxB5 TELEPHONE SET INTERFACE FEATURES • SINGLE DEVICE PROVIDING : DIODE BRIDGE BIDIRECTIONAL PROTECTION ■ CROWBAR PROTECTION ■ PEAK PULSE CURRENT: Ipp = 30A, 10/1000 jis . VOLTAGE RANGE FROM 120V to 270V ■ Maximum current : lo = 0.5

Contextual Info: HE7601SG Description GaAIAs IRED The HE7601SG is a 770 nm band GaAlAs infrared light emitting diode with a double heterojunction struc­ ture. It is suitable as a light source for optical control devices and sensors. features Package Type • HE7601SG: SG

Schaffner IU 1237

Abstract: Schaffner 1237 NSG506C 7R2R23
Contextual Info: C T SG S-THO M SO N LDP24M TRANSIL LOAD DUMP PROTECTION PRELIMINARY DATASHEET • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION . HIGH SURGE CURRENT CAPABILITY: 30 A / 40 ms EXPONENTIAL WAVE a COMPLIANT WITH MAIN STANDARDS

BU810

Contextual Info: S G S -T H O M S O N iM m @ ignnCTisì«ii Sgì BU 810 MEDIUM VOLTAGE NPN FAST-SWITCHING DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON . LOW BASE-DRIVE REQUIREMENTS . FAST SWITCHING SPEED . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

SGS125

Abstract: s125 transistor
Contextual Info: r Z J SGS-TUOMSON Hö i s [liLi©?^ iö©i SG S125 SILICON PNP POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP DARLINGTON . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION . GENERAL PURPOSE SWITCHING DESCRIPTION The SGS125 is a silicon epitaxial-base PNP

SG30TC15M

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE SG 30T C 1 5 M 15 0 V 3 0 A Feature • Tj= 175°C • 7 ; iÆ • Tj=175°C • High lo Rating • Full Molded -,/b F • <£Ir=40|jA • Low Ir=40|jA • U le < l i • igüIÎŒ 2kV{*IŒ • Resistance for thermal run-away

Contextual Info: Schottky Barrier Diode Twin Diode mtmm SG 30TC 12M Unit : mm Package : FTO-220G o -y H d ^ J 120V 30A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • o u t lin e Ir=40|jA Tj=175°C Full Molded Low Ir=40|jA Resistance for thermal run-away

Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE SG 30TC 15M 150V 30A Feature • Tj=150°C • T j= i5 r c • High lo Rating • 7 / iæ - ju ^ • lR = 4 0 p A • Full Molded • Low Ir=40(jA • *& « £ « & : u c < u • Resistance fo r thermal run-away

Contextual Info: '> 3 7 t Schottky Barrier Diode - K Axial Diode OUTLINE DIMENSIONS D1NS6 Case : 0.6 ^ I 2.6 =01 60V 1A i & i a © • T i 15013 o SIE #P h rsm ? J M- D (2 Cathode : Anode ^ Cathode band m j* *}sg]@sr*H2 M arking •S R S S S6 _a 24 -v h ,iii (M) Date code