DIODE SG 5 Search Results

S 205T

Contextual Info: SEC LIGHT EMITTING DIODES ELECTRON DEVICE SG205D,SG205T GaP LIGHT EM ITTIN G DIODE GREEN -N EPO C SERIES— DESCRIPTION The SG 205D, SG 205T are Gap Gallium Phosphide Light Emitting Diodes which are mounted on the lead frames and molded in green diffused, green clear plastic respectively. They are ideally suited for front panel indicator applications.

marking sg

Abstract: diode SOD-323 SD107WS SG DIODE MARKING
Contextual Info: SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance 1.30 · ·

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features ０．８５ 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SOD-323 SD107WS FAST SWITCHING DIODES + FEATURES z Low turn-on voltage z Fast switching - MARKING: SG Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

Contextual Info: SG S-TH O M SO N RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ BDX53F BDX54F COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

SMD MARKING CODE sg

Abstract: diode MARKING CODE sg smd diode marking sG MARKING CODE sg 06 diode sg 01 diode smd marking code SG SG DIODE MARKING diode smd code SG sg smd code smd "code rc" transistor
Contextual Info: SB520WT SCHOTTKY BARRIER DIODE Features PINNING • Ultra small SMD package DESCRIPTION PIN • Very low forward voltage 1 Cathode 2 Anode Applications 2 1 • Ultra high speed switching SG RC • Voltage clamping • Low current rectification Top View Top

Contextual Info: £ ÿ j SG S-TH O M SO N D»ilLiœ s R(|D(êS BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu­ ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre­

Contextual Info: HE7601SG Description GaAIAs IRED The HE7601SG is a 770 nm band GaAlAs infrared light emitting diode with a double heterojunction struc­ ture. It is suitable as a light source for optical control devices and sensors. features Package Type • HE7601SG: SG

BU810

Contextual Info: S G S -T H O M S O N iM m @ ignnCTisì«ii Sgì BU 810 MEDIUM VOLTAGE NPN FAST-SWITCHING DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON . LOW BASE-DRIVE REQUIREMENTS . FAST SWITCHING SPEED . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

SG30TC15M

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE SG 30T C 1 5 M 15 0 V 3 0 A Feature • Tj= 175°C • 7 ; iÆ • Tj=175°C • High lo Rating • Full Molded -,/b F • <£Ir=40|jA • Low Ir=40|jA • U le < l i • igüIÎŒ 2kV{*IŒ • Resistance for thermal run-away

Contextual Info: Schottky Barrier Diode Twin Diode mtmm SG 30TC 12M Unit : mm Package : FTO-220G o -y H d ^ J 120V 30A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • o u t lin e Ir=40|jA Tj=175°C Full Molded Low Ir=40|jA Resistance for thermal run-away

Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE SG 30TC 15M 150V 30A Feature • Tj=150°C • T j= i5 r c • High lo Rating • 7 / iæ - ju ^ • lR = 4 0 p A • Full Molded • Low Ir=40(jA • *& « £ « & : u c < u • Resistance fo r thermal run-away

Contextual Info: '> 3 7 t Schottky Barrier Diode - K Axial Diode OUTLINE DIMENSIONS D1NS6 Case : 0.6 ^ I 2.6 =01 60V 1A i & i a © • T i 15013 o SIE #P h rsm ? J M- D (2 Cathode : Anode ^ Cathode band m j* *}sg]@sr*H2 M arking •S R S S S6 _a 24 -v h ,iii (M) Date code

SG40TC10M

Abstract: schottky diode marking A7 marking c1j c1j marking
Contextual Info: Schottky Barrier Diode mtm OUTLINE Twin Diode SG 40TC 1OM 100 V 40 A Feature • Tj=175°C • Full Molded • Tj=175°C • IS I r =60|j A • • L o w Ir = 6 0 | j A • Resistance for thermal run-away • Dielectric Strength 2kV U 1C < 11 • ig iU ÎŒ 2kV«IŒ

FTO-220G

Abstract: J533 J533-1
Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE SG 40 T C 1 2 M U n it : m m Package I FTO-220G Weight J.54g Typ o v h i j y iw ! ) 120V 40A 4.5 Feature • T j=175°C • T j= 1 7 S f C • y jis t- ib • Full M olded K • I r=60^A • Low lR=60pA • * W I Æ ® e ï: U C C IA

Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE SG 20TC1OM 100V 20A Feature • • • • • • T j= i5 r c • 7 J IÆ -J U K • (S lR = 3 0 p A • j r iiìè s b c u c < u •« » W Œ 2 k V S S I Tj=150°C Full Molded Low lR=30pA Resistance for thermal run-away

73b21

Contextual Info: r Z Z SG S -T H O M S O N • 7 f raooasiiLiieTr^omies S T T B 8 0 6 D l TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av) 8A V rrm 600V t r (typ) 50ns Vf (max) 1.3 V k- w - V FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­

SG DIODE

Abstract: diode Sr BL0508-09-73 5mm LIGHT EMITTING DIODE SG 21 DIODE
Contextual Info: 21.9mm x 21.9mm LED CLUSTER BL0508-09-73 Features Description !HIGH VISIBILITY. !EMITTING COLOR: ! NO. The Super Bright Red source color devices are made HYPER RED. OF BUILT-IN 5mm LED LAMPS: Super Brihgt Red 3 Pcs,Super Bright Green 6 Pcs. !WATERPROOF PACKAGE WITH HOOD SUITABLE

Contextual Info: SGM2021 Low Power, Low Dropout, Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2021 series low-power, low-noise, low-dropout, y Low Output Noise CMOS linear voltage regulators operate from a 2.5V to y Low Dropout Voltage 5.5V input voltage. They are the perfect choice for low

Contextual Info: SKiiP 39AHB16V1 Absolute Maximum Ratings Symbol Conditions IGBT - Chopper K;CO .; .;1X K/CO & M GF N;L 4+8*&& 2'-* 79&* &@*,969*5 (& M GF TUQV N; '@ Y P S& ([ Diode - Chopper MiniSKiiP 3 (& M GF TUQV N; '@ Y P S& .$ .$1X ([ 3-phase bridge rectifier + brake chopper

kl diode

Abstract: international rectifier thyristor 282
Contextual Info: SKiiP 28AHB16V1 Absolute Maximum Ratings Symbol Conditions IGBT - Chopper K;CO .; .;1X K/CO & M GF N;L 4+8*&& 2'-* 79&* &@*,969*5 (& M GF TUQV N; '@ Y P S& ([ Diode - Chopper MiniSKiiP 2 (& M GF TUQV N; '@ Y P S& .$ .$1X ([ 3-phase bridge rectifier + brake chopper

Contextual Info: SKCH 28 VN$W VNNW@ VHNW YH Q FR Z O8&- <,5 &<%*,5P V ^JJ CJJ RJJ LFJJ V ^JJ CJJ RJJ LFJJ O[< Q R¥ ]GP $SG; FRTJ^ $SG; FRTJC $SG; FRTJR $SG; FRTLF L^JJ L^JJ $SG; FRTL^ Symbol Conditions YH [< Q RE ]G [.Q ^E ]G_ <7.+*+ LP [.Q ^E ]G_ IEZTLJJ [.Q ^E ]G_ ILDZTLFE

Contextual Info: SGM2013 300mA, Low Power, Low Dropout 3 -Terminal, Linear Regulators GENERAL DESCRIPTIO FEATURES The SGM2013 low-power, low-dropout, CMOS linear z Ultra-Low Dropout Voltage: 300mV at 300mA Output voltage regulators operate from a 2.5V to 5.5V input and deliver up to 300mA. They are perfect choice for low voltage,