DIODE SD 19 Search Results

SD-0013

Contextual Info: SILICON DIODE CHIPS DEVICE NO. : SD-0013 SD-013 1. Scope : This specification applies to silicon diode chips, Device No. SD-0013. 2. Structure : 2-1. Mesa type. 2-2. Electrodes: P (Anode ) Side: Aluminum alloy or gold alloy. N (Cathode) Side: Gold alloy.

Opto Diode

Contextual Info: SILICON DIODE CHIPS DEVICE NO. : SD-0011 1. Scope : This specification applies to silicon PIN diode chips, Device NO. SD-0011 2. Structure : 2-1. Planar type : Silicon Diode 2-2. Electrodes : Top side Anode : Aluminum Alloy . Back side ( Cathode ) : Gold Alloy.

DIODE RK 306

Abstract: tr/DIODE RK 306
Contextual Info: DETECTORS POSITION SENSITIVE DIODE SD-503 SD-503B, m ^ t o The SD-503 is position sensors fo r au to m a tic focusing of camera. FEATURES • Laser beam fo c u s in g /p o s itio n in g is best perform ed. • High perform ance • High r e lia b ility in dem anding environments.

Contextual Info: SCHOTTKY DIODE ARRAY SDA12 ISSU E 1 -A U G U S T 1996 DEVICE DESCRIPTION FEATURES The SD A 12 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • Reduced reflection noise • Repetitive peak forward current - 200mA

Contextual Info: SCHOTTKY DIODE ARRAY IS S U E 2 - J A N U A R Y 1998 DEVICE DESCRIPTION FEATURES The SD A 12 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • Reduced reflection noise • Repetitive peak forward current

SD4148

Abstract: MMSD4148T1
Contextual Info: •■■éUMÌÌh MOTOROLA Order this document by MMSD4148T1/D SEMICONDUCTOR TECHNICAL DATA Switching Diode M M SD 4148T1 The switching diode has the following features: • SOD-123 Surface Mount Package • High Breakdown Voltage • Fast Speed Switching Time

Contextual Info: DETECTORS POSITION S EN SIT IV E DIODE S D 1 0 1 ,102,103 W f c S f e DIMENSIONS Urtit:mm SD-101, 102, 103IS, •§m<D%±m=?-T‘ t o The SD-101, 102, 103 are position sensors for automatic focusing of camera. FEATURES • B ft/ S fiS fttU ., • a tS E S 'ftC ^ l'o

Contextual Info: OVAL SOLID STATE LAMP ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES WP5603PBDL/SD/H BLUE Description Features OUTSTNDING MATERIAL EFFICIENCY. The Blue source color devices are made with InGaN on SiC Light Emitting Diode.

Contextual Info: OVAL SOLID STATE LAMP ATTENTION WP5603VGDL/SD/H GREEN OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description Features OUTSTNDING MATERIAL EFFICIENCY. The Green source color devices are made with InGaN on SiC Light Emitting Diode.

B-500 diode

Abstract: 3700/2200 250C1500 B250C 8250 C3700-2200 TT 2200 b80c din 46247 B380
Contextual Info: Rectifier Diode Bridges Type V rrm V rms V V Ifsm Ifav m A A Last 10 ms load tvj=tvjma change: Type tvj max outline O c V rrm V rms Ifsm Ifavm V V A A Last load change: tvj= tvjmax R/C B 40 C 800 Si,.D,.SD 100 40 145 B2 30/ 25-30 Si 75 30 B 80 C 800 Si, .D.SD

B-500 diode

Abstract: B40C C5000-3300 C1500 b6 diode B80C 3700 40C5000 SIB660 diode 2200
Contextual Info: Rectifier Diode Bridges Type V rrm V rms V V Ifsm If a v m A A Last 10 ms load tvj=tvjma change: R/C -v max outline Type O c V rrm V rms *FSM ' favm V V A A 10 ms t vj= t vjmax B 40 C 800 Si,.D,.SD 100 40 145 B2 30/ 25-30 Si 75 30 B 80 C 800 Si, .D.SD

Contextual Info: OVAL SOLID STATE LAMP Part Number: WP5603SIDL/SD/J3 Hyper Red Features Description z Outstanding material efficiency. The Hyper Red device is based on light emitting diode chip z Reliable and rugged. made from AlGaInP. z RoHS compliant. Package Dimensions

SDA803

Abstract: 20 amp rectifier
Contextual Info: SDÄ803 * c'0 ' ?' 1 20 amp rectifier assembly * AVERAGE OUTPUT CURRENT 20 AMPS * 50 NSEC. * MAXIMUM THERMAL RESISTANCE 4°C/WATT * HERMETICALLY SEALED DIODE CELLS * TURRET TERMINAL MAXIMUM RECOVERY Designed in aluminum case to provide maximum thermal conductivity and simple installation.

D3229

Abstract: SN74S1050 SN74S1052 switching diode 16 array
Contextual Info: SN 74S 1052 16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SD LS016A • Designed to Reduce Reflection Noise • Repetitive Peak Forward Current . . . 2 0 0 mA • • • D3229. JULY 19B9-REVISED MARCH 1990 D W OR N PACKAGE TOP VIEW D01 C D 02 C DO 3 C

SDcd data sheet

Abstract: AN10439
Contextual Info: IP4352CX24 9-channel SD-memory card interface filter with ESD protection to IEC 61000-4-2 level 4 Rev. 01 — 13 August 2009 Product data sheet 1. Product profile 1.1 General description The IP4352CX24 is a diode array for protecting downstream components from

SDC04

Contextual Info: SDC04 NPN Darlington External dimensions E With built-in avalanche diode Absolute maximum ratings Electrical characteristics Ta=25°C ••• SD (Ta=25°C) Specification min typ max Symbol Ratings Unit Symbol VCBO 100±15 V ICBO VCEO 100±15 V IEBO VEBO

IP4350CX24

Abstract: TF card footprint PCB
Contextual Info: IP4352CX24 9-channel SD memory card interface filter with ESD protection to IEC 61000-4-2 level 4 Rev. 02 — 3 May 2010 Product data sheet 1. Product profile 1.1 General description The IP4352CX24 is a diode array designed to provide protection to downstream

Contextual Info: IP4352CX24 9-channel SD memory card interface filter with ESD protection to IEC 61000-4-2 level 4 Rev. 02 — 3 May 2010 Product data sheet 1. Product profile 1.1 General description The IP4352CX24 is a diode array designed to provide protection to downstream

SDC03

Contextual Info: SDC03 NPN Darlington With built-in avalanche diode Absolute maximum ratings External dimensions E Electrical characteristics Ta=25°C Symbol Ratings Unit Symbol VCBO 60±10 V ICBO VCEO 60±10 V IEBO SD (Ta=25°C) Specification min typ max 1.1 ••• Unit

4011 TOSHIBA

Abstract: 1SV102 C20V C25V TA510 25R4
Contextual Info: T OSH IBA "b? {DISCRETE/OPTO} 9097250 TOSHIBA m DISCRETE/OPTO> 1SV102 ^ TI^ Ü^ SD DOO^Bbl 67C 09361 o T - O lH I "Silicon Epitaxial Planar Type • Variable Capacitance Diode Unit in mm AU RADIO BAND TUNING APPLICATIONS. FEATURES: . High Capacitance Ratio : C2v/C25V=23(Typ.

SDC06

Contextual Info: SDC06 NPN With built-in avalanche diode Absolute maximum ratings External dimensions E Electrical characteristics Ta=25°C SD (Ta=25°C) Specification min typ max Symbol Ratings Unit Symbol VCBO 30 to 45 V ICBO VCEO 30 to 45 V IEBO VEBO 6 V VCEO 30 IC 2

Contextual Info: Surging Ideas T VS Diode Application Note TEL: 805-498-2111 SI96-12 FAX: 805-498-3804 E SD Protection Good Systran design demands some form of ESD protection. Good shielding of conductive cables and equipment cases as well as good bonding practices are required for externally radiated ESD emissions. For

Russian diode Transistor

Abstract: LASER DIODE DRIVER ldd-9 Spectra-Physics 476 russian diode High Vacuum Distillation furnace ATC-2430 Spectra-Physics 20 watt laser module breast pump russian diodes Rittal
Contextual Info: ATC-SD Home Page High power laser diode manufacturer Most high-tech companies keep their know-how in secret and sell only ready products. We have the opposite strategy. Our main product is know-how. There is equipment and Equipment. We offer you Equipment which is fully adapted for real A3B5

2DI75M-120

Abstract: T151 T930 B383
Contextual Info: 2DI75M-1 20 75A ' < r7 — h 7 V y X ^ i y ±/n °7-Z î Sd.-JU a — 71/ : Outline Drawings POWER TRANSISTOR MODULE Mounting hole i Features • 12 = ^ = C2E1 High Arm Short Circuit Capability • h F E ^ f t i' /T * V £ / Including Free Wheeling Diode