DIODE SCR Search Results

Contextual Info: PD47_06 POW-R-BLOKTM Dual SCR / Diode Isolated Module 600 Amperes, Up to 2400 Volts Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Description: Powerex Dual SCR/Diode Modules are designed for use in applications requiring

Contextual Info: LD421850 TM POW-R-BLOK Dual SCR/Diode Isolated Module 500 Amperes / 1800 Volts Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING Powerex Dual SCR/Diode Modules are designed for use in applications requiring phase control and isolated

5SLA 3600E170300

Abstract: 5SYA2039 3600E170300
Contextual Info: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 HiPak Single DIODE Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Y234

Abstract: newave power 2RI100E ZS1000
Contextual Info: _ _ _ 2-Pack Diode 2R110OE-060/080 '“ S T POWER DIODE MODULE Features • All the term inals and the m ounting plate are electrically isolated. These modules can be Installed in the same cooling fin as other modules, thus saving installation space - a cost-effective feature.

Contextual Info: Paper Sensor KPS1006C Description The KPS1006C photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC in which a photo diode, signal processing circuit, constant voltage circuit and modulation circuit are integrated at the light receiving side.

PIN Photodiode side look

Abstract: TOLD9442M
Contextual Info: T O SH IB A TOLD9442M TOSHIBA LASER DAIODE InGaAlP TOLD9442M Lasing Wavelength : Ap = 650 nm Typ. Optical Output Power : P0 = 5 mW Operation Case Temperature : Tc = —10~60°C Pin Connection LD Ô 6 ! PD 2 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE

Contextual Info: TOLD9221M TO SHIBA TO SHIBA LASER DAIODE InGaAlP TOLD9221M Unit in mm Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T c = —10~60°C Pin Connection VsVT 1O 9 3 LD (3ï) PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE

ixys dsei 2x30

Abstract: DSEI IXYS 2x31 IXYS DSEI 2 DSEI 20-01 A
Contextual Info: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 1000 1000 IFAVM = 2x30 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 30-10P DSEI 2x 31-10P 2x30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM

BU2525DX

Abstract: bu2525D
Contextual Info: SavantIC Semiconductor Product Specification BU2525DX Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of large screen color TV receivers

Contextual Info: IGBT MODU ODULE MBM200JS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES 4-φ6.5 * High speed and low saturation voltage. 3-M6 108 93 18 20 4-Fast-on Terminal #110 20 C2E1 G2 * low noise due to built-in free-wheeling 15 27 48 62 E2 diode - ultra soft fast recovery diode USFD .

2x61

Abstract: IXYS DSEI 2X61 6112P
Contextual Info: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 IFAVM = 2x52 A VRRM = 1200 V trr = 40 ns Type DSEI 2x 61-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM

dsei 101-12a

Abstract: E72873
Contextual Info: DSEI 2x 101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 VRRM = 1200 V IFAVM = 2x 91 A trr = 40 ns miniBLOC, SOT-227 B E72873 Type DSEI 2x 101-12A Symbol Test Conditions Maximum Ratings (per diode) IF(RMS) IF(AV)M ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5

DSEI 2X101-06

Abstract: ixys dsei 101-06A E72873 IXYS DSEI 2
Contextual Info: DSEI 2x 101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 VRRM = 600 V IFAVM = 2x 96 A trr = 35 ns miniBLOC, SOT-227 B E72873 Type DSEI 2x 101-06A Symbol Test Conditions Maximum Ratings (per diode) IF(RMS) IF(AV)M ① IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5

30N60U1

Abstract: 30n60
Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 30 N60U1 IXSH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

Contextual Info: SB16-100MA SB16-100AM SB16-100RM SEME LAB MECHANICAL DATA Dimensions in mm DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI–REL APPLICATIONS FEATURES • HERMETIC TO220 METAL PACKAGE • ISOLATED CASE • SCREENING OPTIONS AVAILABLE TO220 METAL PACKAGE

M3227

Abstract: M3071 m3240 BR216 diode JJ ptm1 FN1510
Contextual Info: PHILIPS INTER NA TIONAL SbE D 711Dö5ti DDM1D7M 37T • PHIN BR216 T-ll-23 DUAL ASYMMETRICAL BREAKOVER DIODE The B R 2 1 6 is a monolithic dual asymmetrical 65 V breakover diode in the T 0 -2 2 0 A B outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a

bridge rectifier module ECG 5700

Abstract: sec d 5702 AC261 ECG5700 ECG5701 all scr U250 X0205 RECTIFIER GI schematic symbol for varistor
Contextual Info: Industrial Power Modules cont'd Hybrid Modules 5700 EC G No. Description Single Phase, Hybrid Bridge, Common Cathode Freewheeling Diode AC2G2 Sci î i < 3 Cl AC2G2 (♦) ♦G1 A AC11 AC2 Schematic Diagrams V \ AC2 S P -G 1 G4 AC1 • 5704 SCR A C Switch

K-55611-TD357-2

Abstract: TD357 DIODE y 12 K-55611-TD357-S diode EB Scans-0017400 general electric 32HQ7
Contextual Info: E L E C T R O N IC — PRODUCT INFORMATION — Page 1 mmmmm I N A C T IO N - Compactron Diode-Pentode TUBES LOW HEATER POWER MULTIFUNCTION DIFFUSION BONDED DIODE CATHODE The 32HQ7 is a m u ltifu n c tio n com pactron c o n ta in in g a hig h -p e rve an ce dio d e and a beam power pentode. The

Contextual Info: SKKD 260 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 3 Rectifier Diode Modules ./01 .//1 . >77 6 77 6@77 "677 . ;77 6"77 677 "777 2 %. 4 "7 % 8   6;7< , 4 ;! =&: 0?+ "7'7; 0?+ "7'6" 0?+ "7'6 0?+ "7'"75 " 77 ""77 0?+ "7'""5 Symbol Conditions Values

MO-275

Abstract: BS448 Mullard
Contextual Info: S P E C I A L Q U A L I T Y D O U B L E D IO D E M82I2 Special quality double diode with separate cathodes and internal screening between sections for use in equipment where mechanical vibrations and shocks are unavoidable and where statistically controlled major electrical characteristics are required.

Contextual Info: LD41_60 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Description: OUTLINE DRAWING Powerex Dual Diode Modules are designed for use in applications requiring rectification and isolated packaging. The modules are isolated

Contextual Info: SKKE 380 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 3 Rectifier Diode Modules SKKE 380 *+, )*, ) 6!00 ) 6900 -%#) / !50 # 1   6507 ' / 600 8$4 +: !50;69 6<00 6 00 +: !50;6 Symbol Conditions -%#)   6507 ' / 600 8$ -%+, > -%*,+ / 00 # 12 3  

Contextual Info: 20JL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20JL2C41A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION z Repetitive Peak Reverse Voltage : VRRM = 600 V z Average Output Rectified Current : IO = 20 A

AA3528SF4S-R

Contextual Info: 3.5x2.8 mm INFRARED EMITTING DIODE Part Number: AA3528SF4S-R Features Description z Mechanically and spectrally matched to the phototransistor. SF4 Made with Gallium Aluminum Arsenide Infrared z Package : 1500pcs / reel. Emitting diodes. z Moisture sensitivity level : level 3.