DIODE SCHOTTKY CMS Search Results

CPD92

Abstract: Schottky Diode 1N6263 CMDD6263 CMKD6263 CMOD6263 CMPD6263 CMSD6263
Contextual Info: PROCESS CPD92 Central Schottky Diode TM Semiconductor Corp. High Voltage Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 7.9 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å

"Schottky Diode"

Abstract: 1N6263 Schottky diode Die Schottky diode wafer CMOD6263 CMPD6263 CMSD6263 CPD92V CMDD6263 CMKD6263
Contextual Info: PROCESS CPD92V Schottky Diode High Voltage Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

schottky diode high voltage

Abstract: diode schottky 29 1N6263 diode 29 CMDD6263 CMKD6263 CMLD6263 CMOD6263 CMPD6263 CMSD6263
Contextual Info: PROCESS CPD92V Schottky Diode High Voltage Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

"Schottky Diode"

Abstract: 1N6263 CMDD6263 CMKD6263 CMLD6263 CMOD6263 CMPD6263 CMSD6263 CMUD6263E
Contextual Info: PROCESS CPD102X Schottky Diode High Voltage Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 5.9 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

DIODE 720

Abstract: "Schottky Diode" DIODE R3 CPD48V high current schottky diode
Contextual Info: PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 13.8 x 13.8 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

high current schottky diode

Abstract: CPD48V "Schottky Diode" DIODE 3T Schottky diode wafer
Contextual Info: PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 x 14 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

CPD48V

Contextual Info: PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 x 14 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

Contextual Info: PROCESS CPD48V Schottky Diode High Current Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 x 14 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 9.0 x 9.0 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

cms diode

Abstract: Diode schottky cms HSMS8202 package marking schottky diode hsms8202 uA 733 CMS2802 CMS2802DS Cross Reference sot23 microwave mixer diode
Contextual Info: Preliminary Data CMS-2802 Microwave Mixer Diode Description: Features: The Zywyn CMS-2802 Schottky Diode is designed for applications ranging from 10~14 GHz. It is optimized for use in X/Ku bands and is ideal for downconverter applications. It is available in plastic SOT-23 standard

CMS16

Contextual Info: CMS16 TOSHIBA Schottky Barrier Diode CMS16 Switching Mode Power Supply Applications Portable Equipment Battery Applications DC-DC Converter Applications Symbol Repetitive peak reverse voltage VRRM Average forward current IF AV Nonrepetitive peak surge current

Contextual Info: CMS16 TOSHIBA Schottky Barrier Diode CMS16 Switching Mode Power Supply Applications Portable Equipment Battery Applications DC-DC Converter Applications Symbol Repetitive peak reverse voltage VRRM Average forward current IF AV Nonrepetitive peak surge current

2N3904 TRANSISTOR SMD

Abstract: 2L smd transistor transistor SMD 2n3904 ny smd transistor 2N2222A npn transistor 2N3904 NPN Transistor SOT23 transistor 2N2222A smd TRANSISTOR NY smd transistor 2l transistor 2N3906 smd
Contextual Info: New in this issue Hauppauge, NY USA – August 2, 2001 • NEW! ULTRAmini Transistors Featured Product Current Limiting Diodes Practical Applications for Current Limiting Diodes - by Sze Chin • NEW! ½ Amp Schottky The current limiting diode CLD or current regulating diode

CMS20

Contextual Info: CMS20 TOSHIBA Schottky Barrier Diode CMS20 Switching Mode Power Supply Applications Portable Equipment Battery Applications Symbol Rating Unit Repetitive peak reverse voltage VRRM 60 V Average forward current IF AV Non-repetitive peak surge current Junction temperature

CMS17

Contextual Info: CMS17 TOSHIBA Schottky Barrier Diode CMS17 Switching Mode Power Supply Applications Portable Equipment Battery Applications • Unit: mm Forward voltage: VFM = 0.48 V max • Average forward current: IF (AV) = 2.0 A • Repetitive peak reverse voltage: VRRM = 30 V

Contextual Info: CMS30I30A Schottky Barrier Diode CMS30I30A 1. Applications • Secondary Rectification in Switching Regulators • Reverse-Current Protection in Mobile Devices 2. Features 1 Peak forward voltage: VFM = 0.49 V (max)@IF = 3.0 A (2) Average forward current: IF(AV) = 3.0 A

CMS17

Contextual Info: CMS17 TOSHIBA Schottky Barrier Diode CMS17 Switching Mode Power Supply Applications Portable Equipment Battery Applications • • • • Unit: mm Forward voltage: VFM = 0.48 V max Average forward current: IF (AV) = 2.0 A Repetitive peak reverse voltage: VRRM = 30 V

Contextual Info: CMS20I30A Schottky Barrier Diode CMS20I30A 1. Applications • Secondary Rectification in Switching Regulators • Reverse-Current Protection in Mobile Devices 2. Features 1 Peak forward voltage: VFM = 0.45 V (max)@IFM = 2.0 A (2) Average forward current: IF(AV) = 2.0 A

Contextual Info: CMS20I40A Schottky Barrier Diode CMS20I40A 1. Applications • Secondary Rectification in Switching Regulators • Reverse-Current Protection in Mobile Devices 2. Features 1 Peak forward voltage: VFM = 0.52 V (max) @IFM = 2 A (2) Average forward current: IF(AV) = 2 A

Contextual Info: CMS10I30A Schottky Barrier Diode CMS10I30A 1. Applications • Secondary Rectification in Switching Regulators • Reverse-Current Protection in Mobile Devices 2. Features 1 Peak forward voltage: VFM = 0.36 V (max) @IFM = 1 A (2) Average forward current: IF(AV) = 1 A

CMS17

Contextual Info: CMS17 TOSHIBA Schottky Barrier Diode CMS17 Switching Mode Power Supply Applications Portable Equipment Battery Applications • • • • Unit: mm Forward voltage: VFM = 0.48 V max Average forward current: IF (AV) = 2.0 A Repetitive peak reverse voltage: VRRM = 30 V

Contextual Info: CMS17 TOSHIBA Schottky Barrier Diode CMS17 Switching Mode Power Supply Applications Portable Equipment Battery Applications • • • • Unit: mm Forward voltage: VFM = 0.48 V max Average forward current: IF (AV) = 2.0 A Repetitive peak reverse voltage: VRRM = 30 V

Contextual Info: CMS17 TOSHIBA Schottky Barrier Diode CMS17 Switching Mode Power Supply Applications Portable Equipment Battery Applications • • • • Unit: mm Forward voltage: VFM = 0.48 V max Average forward current: IF (AV) = 2.0 A Repetitive peak reverse voltage: VRRM = 30 V

M-FLAT

Abstract: CMS30I30A
Contextual Info: CMS30I30A Schottky Barrier Diode CMS30I30A 1. Applications • Secondary Rectification in Switching Regulators • Reverse-Current Protection in Mobile Devices 2. Features 1 Peak forward voltage: VFM = 0.49 V (max)@IF = 3.0 A (2) Average forward current: IF(AV) = 3.0 A

Contextual Info: CMS15I40A Schottky Barrier Diode CMS15I40A 1. Applications • Secondary Rectification in Switching Regulators • Reverse-Current Protection in Mobile Devices 2. Features 1 Peak forward voltage: VFM = 0.49 V (max) @IFM = 1.5 A (2) Average forward current: IF(AV) = 1.5 A