DIODE SCHOTTKY 0.2V Search Results

Contextual Info: Ordering number : EN3240C 1SS351 Schottky Barrier Diode http://onsemi.com Dual Series Schottky Barrier Diode for Mixer and Detector 5V, 30mA, 0.69pF, CP Features • • • Series connection of 2 elements in a small-sized package facilitates high-density mounting and

LTC4358

Abstract: LTC4252-2A LTC4358CFE MARKING TRANSISTOR BD RC marking g02 tssop FE16 n channel mosfet marking Bc B530C LTC4358C LTC4358CDE
Contextual Info: LTC4358 5A Ideal Diode FEATURES DESCRIPTION n The LTC 4358 is a 5A ideal diode that uses an internal 20mΩ N-channel MOSFET to replace a Schottky diode when used in diode-OR and high current diode applications. The LTC4358 reduces power consumption, heat

Contextual Info: LTC4358 5A Ideal Diode FEATURES n n n n n n n DESCRIPTION The LTC 4358 is a 5A ideal diode that uses an internal 20mΩ N-channel MOSFET to replace a Schottky diode when used in diode-OR and high current diode applications. The LTC4358 reduces power consumption, heat

Contextual Info: LTC4229 Ideal Diode and Hot Swap Controller Features Description Ideal Diode and Inrush Current Control for Redundant Supplies n Low Loss Replacement for Power Schottky Diode n Protects Output Voltage from Input Brownouts n Allows Safe Hot Swapping from a Live Backplane

Contextual Info: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.

Solar Charge Controller

Abstract: 48V 100W zener diode 14v 10A mosfet solar controller FDB3632 solar panel controller p channel mosfet 100v Solar Charge Controller Circuit SMAT70A solar panel 5v
Contextual Info: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.

Contextual Info: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.

NTE578

Contextual Info: NTE578 Silicon Rectifier Schottky Barrier, General Purpose Description: The NTE578 is a general purpose rectifier employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the art geometry features epitaxial construction with oxide

Step-up 12V to 36V 300mA

Abstract: LT3473 LT3473A LT3473AEDE LT3473EDD LTC3473A ltc3436 3473
Contextual Info: LT3473/LT3473A Micropower 1A Boost Converter with Schottky and Output Disconnect U FEATURES DESCRIPTIO • The LT 3473/LT3473A are micropower step-up DC/DC converters with integrated Schottky diode and output disconnect circuitry in low profile DFN packages. The

ltg2

Abstract: LT3464ETS8
Contextual Info: LT3464 Micropower Boost Converter with Schottky and Output Disconnect in ThinSOT U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 3464 is a micropower step-up DC/DC converter with integrated Schottky diode and output disconnect

lemc3225

Abstract: murata lqh32cn470k GMK212 LMK107 LT3464 LT3464ETS8 LEMC3225-100 c3464 8D26 LEMC3225-68
Contextual Info: Final Electrical Specifications LT3464 Micropower Boost Converter with Integrated Schottky and Output Disconnect in ThinSOT U • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 3464 is a micropower step-up DC/DC converter with integrated Schottky diode and output disconnect

LTC4416

Contextual Info: LTC4353 Dual Low Voltage Ideal Diode Controller FEATURES n n n n n n n DESCRIPTION The LTC 4353 controls external N-channel MOSFETs to implement an ideal diode function. It replaces two high power Schottky diodes and their associated heat sinks, saving power and board area. The ideal diode function

mini inductances

Contextual Info: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES n n n n n n DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode with an N-Channel MOSFET 0.5µs Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V

sot 26 Dual N-Channel MOSFET

Abstract: LTCXD
Contextual Info: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES • ■ ■ ■ ■ ■ DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode with an N-Channel MOSFET 0.5 s Turn-Off Time Limits Peak Fault Current Wide Operating Voltage Range: 9V to 80V

1SS351

Contextual Info: 1SS351 Ordering number : EN3240C SANYO Semiconductors DATA SHEET 1SS351 Silicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications Features • • • Series connection of 2 elements in a small-sized package facilitates high-density mounting and

DTM180AA

Abstract: DT-408 STD8018A LP05018 LS1012 DTM180AB
Contextual Info: ZERO-BIAS SCHOTTKY DIODE DETECTORS 100 KHz - 50 GHz FEATURES • No Bias Required • Matched Input for Excellent VSWR* • Extremely Flat Frequency Response* • Very High Sensitivity DZ Series * (DZR & DZM Series) APPLICATIONS ENVIRONMENTAL RATINGS

Contextual Info: Ordering number :EN3240B 1SS351 Silicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications Features Package Dimensions • Series connection of 2 elements in a small-sized package facilitates high-density mounting and permits 1SS351-applied equipment to be made

1SS351

Contextual Info: Ordering number :EN3240B 1SS351 Sillicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications Features Package Dimensions • Series connection of 2 elements in a small-sized package facilitates high-density mounting and permits 1SS351-applied equipment to be made

1SS351

Contextual Info: Ordering number :EN3240B 1SS351 Silicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications Features Package Dimensions • Series connection of 2 elements in a small-sized package facilitates high-density mounting and permits 1SS351-applied equipment to be made

ss295

Abstract: 1SS295 SS29
Contextual Info: TOSHIBA 1SS295 TOSHIBA DIODE UHF BAND MIXER APPLICATIONS. • • • 1 SS295 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Small Package Small Delta Forward Voltage Small Delta Total Capacitance Unit in mm : AVjr = 10mV Max. : AOr = 0.1pF (Max.) E +0.5 2.5-0.3

1SS295

Contextual Info: 1SS295 TO SH IBA TOSHIBA DIODE UHF BAND MIXER APPLICATIONS. • • • 1 SS295 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Small Package Small Delta Forward Voltage Small Delta Total Capacitance : AVjp = 10mV Max. : AOr = 0.1pF (Max.) MAXIMUM RATINGS (Ta = 25°C)

MOSFET current sense amplifier

Abstract: IR3550
Contextual Info: 50A Integrated PowIRstage FEATURES IR3551 DESCRIPTION • Peak efficiency up to 94.5% at 1.2V  Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode  Input voltage VIN operating range up to 15V  Output voltage range from 0.25V up to 3.3V

LTC4355IS#PBF

Abstract: MOSFET and parallel Schottky diode 200w power amplifier circuit diagram irf3710 1A IRF3710 MOSFET pin diagram of MOSFET how mosfets connect parallel IRF3710 equivalent lt 0806 mosfet irf3710
Contextual Info: SPELL CHECK COMPLETED LTC4355 Positive High Voltage Ideal Diode-OR with Input Supply and Fuse Monitors Description Features • ■ ■ ■ ■ ■ ■ ■ Replaces Power Schottky Diodes Controls N-Channel MOSFETs 0.5µs Turn-Off Time Limits Peak Fault Current

IR3550

Contextual Info: 60A Integrated PowIRstage FEATURES IR3550 DESCRIPTION • Peak efficiency up to 95% at 1.2V  Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode  Input voltage VIN operating range up to 15V  Output voltage range from 0.25V up to 3.3V