DIODE SCD Search Results

BAR65-02W

Abstract: SCD80
Contextual Info: BAR65-02W Silicon RF Switching Diode
Low loss, low capacitance PIN-diode 2
Band switch for TV-tuners
Series diode for mobile communication transmit-receiver switch 1 Type BAR65-02W Marking N VES05991 Pin Configuration 1=C 2=A Package SCD80 Maximum Ratings

Contextual Info: BAR 65-02W Silicon RF Switching Diode
Low loss, low capacitance PIN-diode 2
Band switch for TV-tuners
Series diode for mobile communication transmit-receiver switch 1 VES05991 Type Marking Pin Configuration Package BAR 65-02W N 1=C SCD-80 2=A Maximum Ratings

BA792

Abstract: top mark smd Philips Diode smd code 805 SMD MARKING 541 DIODE 279-27 smd diode marking kda marking code kda smd code marking 777 smd diode marking 77 S4 SMD diode mark
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BA792 Band-switching diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance:

SMD MARKING 541 DIODE

Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET L8 book, halfpage M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF

Contextual Info: PRODUCT: ZEN056V075A48LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27365 REV LETTER: E REV DATE: JUNE 22, 2011 PAGE NO : 1 OF 8 Specification Status: Released GENERAL DESCRIPTION TE PolyZen devices are polymer enhanced, precision Zener diode micro-assemblies.

Zener Diode 5A

Contextual Info: PRODUCT: ZEN132V230A16LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27362 REV LETTER: D REV DATE: MAY 11, 2011 PAGE NO.: 1 OF 8 Specification Status: Released GENERAL DESCRIPTION TE PolyZen devices are polymer enhanced, precision Zener diode micro-assemblies.

Contextual Info: PRODUCT: ZEN098V130A24LS PolyZen DOCUMENT: SCD27645 REV LETTER: D REV DATE: MAY 16, 2011 PAGE NO.: 1 OF 7 Polymer Enhanced Zener Diode Micro-Assemblies Specification Status: Preliminary GENERAL DESCRIPTION TE PolyZen devices are polymer enhanced, precision Zener diode micro-assemblies.

Contextual Info: PRODUCT: ZEN065V130A24LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27363 REV LETTER: E REV DATE: MAY 11, 2011 PAGE NO.: 1 OF 8 Specification Status: Released GENERAL DESCRIPTION TE PolyZen devices are polymer enhanced, precision Zener diode micro-assemblies.

BAT62

Abstract: BAT62-02W SCD80
Contextual Info: BAT62-02W Silicon Schottky Diode
Low barrier diode for detectors up to GHz 2 frequencies 1 VES05991 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration BAT62-02W 2 1=C Package 2=A SCD80 Maximum Ratings

Contextual Info: PRODUCT: ZEN164V130A24LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27330 REV LETTER: D REV DATE: MAY 29, 2011 PAGE NO.: 1 OF 8 Specification Status: Released GENERAL DESCRIPTION TE PolyZen devices are polymer enhanced, precision Zener diode microassemblies. They offer resettable

BBY52-02W

Abstract: SCD80 MARKING 02W bby5202w
Contextual Info: BBY52-02W Silicon Tuning Diode • High Q hyperband tuning diode • Low series inductance • Designed for low tuning voltage operation 2 • For VCO's in mobile communications equipment 1 VES05991 Type Marking Pin Configuration Package BBY52-02W K 1=C SCD80

Contextual Info: PRODUCT: ZEN056V230A16LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27327 REV LETTER: E REV DATE: MAY 11, 2011 PAGE NO.: 1 OF 8 Specification Status: Released GENERAL DESCRIPTION TE PolyZen devices are polymer enhanced, precision Zener diode microassemblies. They offer resettable

Contextual Info: PRODUCT: ZEN132V130A24LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD26665 REV LETTER: G REV DATE: MAY 12, 2011 PAGE NO.: 1 OF 8 Specification Status: Released GENERAL DESCRIPTION TE PolyZen devices are polymer enhanced, precision Zener diode microassemblies. They offer resettable

Contextual Info: PRODUCT: ZEN056V130A24LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD26730 REV LETTER: F REV DATE: MAY 12, 2011 PAGE NO.: 1 OF 8 Specification Status: Released GENERAL DESCRIPTION TE PolyZen devices are polymer enhanced, precision Zener diode microassemblies. They offer resettable

Contextual Info: PRODUCT: ZEN065V230A16LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27315 REV LETTER: D REV DATE: MAY 11, 2011 PAGE NO.: 1 OF 8 Specification Status: Released GENERAL DESCRIPTION TE PolyZen devices are polymer enhanced, precision Zener diode microassemblies. They offer resettable

Contextual Info: SIEMENS BAS 16-02W Silicon Switching Diode Preliminary data • For high-speed switching applications Type Marking Ordering Code Pin Configuration Package BAS 16-02W 3 Q62702-A1239 1=A SCD-80 2=C Maximum Ratings Parameter Symbol Diode reverse voltage Vr 75

BAS16-02W

Abstract: BAS1602W SCD80
Contextual Info: BAS16-02W Silicon Switching Diode
For high-speed switching applications 2 1 VES05991 Type Marking Pin Configuration Package BAS16-02W 3 1=C SCD80 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM 85 Forward current

Q62702-A1028

Contextual Info: BAT 62-02W Silicon Schottky Diode • Low barrier diode for detectors up to GHz 2 frequencies 1 VES05991 ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code Pin Configuration Package BAT 62-02W L 1=C SCD-80

Q62702-A1239

Contextual Info: BAS 16-02W Silicon Switching Diode Preliminary data • For high-speed switching applications 2 1 VES05991 Type Marking Ordering Code Pin Configuration Package BAS 16-02W 3 Q62702-A1239 1=A SCD-80 2=C Maximum Ratings Parameter Symbol Diode reverse voltage

a1216 transistor

Abstract: Q62702-A1216
Contextual Info: BAR 65-02W Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-diode • Band switch for TV-tuners 2 • Series diode for mobile communication transmit-receiver switch 1 VES05991 Type Marking Ordering Code Pin Configuration Package

Contextual Info: SIEMENS BAR 65-02W Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-diode • Band switch for TV-tuners • Series diode for mobile communication transmit-receiver switch Type Marking Ordering Code Pin Configuration Package BAR 65-02W

str 6707

Abstract: BP317 Diode smd code 805 SMD 2211 smd schottky diode marking 72 BAT254
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET L4 dbook, halfpage M3D177 BAT254 Schottky barrier diode Product specification 1996 Mar 19 Philips Semiconductors Product specification Schottky barrier diode BAT254 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD110 very small ceramic

Contextual Info: BAT63. Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies • For high-speed applications • Zero bias detector diode • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAT63-02V BAT63-07W " ! ,   ,

BBY51-02W

Abstract: SCD80 MARKING 02W
Contextual Info: BBY51-02W Silicon Tuning Diode
High Q hyperabrupt tuning diode 2
Low series inductance
Designed for low tuning voltage operation
For VCO's in mobile communications equipment 1 VES05991 Type Marking Pin Configuration Package BBY51-02W I 1=C SCD80 2=A