DIODE S6 28 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SD103AW-SD103CW SOD-123 SCHOTTKY DIODES FEATURES MARKING: SD103AW: S4 SD103BW: S5 SD103CW: S6 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD103AWS-SD103CWS SOD-323 SCHOTTKY DIODES FEATURES MARKING: SD103AW: S4 SD103BW: S5 SD103CW: S6 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter

SD103AW

Abstract: SD103BW SD103CW continental SOD123 103CW
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SCHOTTKY BARRIER SWITCHING DIODE SD103AW - SD103CW SOD-123 PLASTIC PACKAGE Marking: Date Code Polarity: Cathode Band SD103AW=S4 SD103BW=S5 SD103CW=S6 ABSOLUTE MAXIMUM RATINGS

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SCHOTTKY BARRIER SWITCHING DIODE SD103AW - SD103CW SOD-123 PLASTIC PACKAGE Marking: Date Code Polarity: Cathode Band SD103AW=S4 SD103BW=S5 SD103CW=S6 ABSOLUTE MAXIMUM RATINGS

Contextual Info: GWM 160-0055P3 VDSS = 55 V = 160 A ID25 RDSon typ. = 2.0 mW Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 L- Conditions VDSS TJ = 25°C to 150°C Maximum Ratings IF25 IF90 TC = 25°C diode

smd diode code SL

Abstract: smd diode g6 DIODE S4 39 smd diode smd diode code g3 SMD mosfet MARKING code TC S4 SMD Marking Code SMD MARKING CODE s4 smd diode code g4 smd diode code s3 smd diode marking s4 smd diode S6
Contextual Info: GWM 160-0055P3 Three phase full Bridge VDSS = 55 V = 160 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 L- Conditions VDSS TJ = 25°C to 150°C Maximum Ratings IF25 IF90 TC = 25°C diode

fast recovery diode 1a trr 200ns

Abstract: DIODE MARKING code GM oms 450 S60L120 fly wheel SG DIODE MARKING diode MARKING CODE sg
Contextual Info: Super Fast Recovery Diode Single Diode Wtm OUTLINE S6 0 L120 1200V 60A Feature • rüIitEEFRD • H igh Voltage S u p er FRD • L o w N oise • trr = 2 0 0 n s • trr= 2 0 0 n s • ö jc f t '/ J v ö 'l 'i • S m all Bjc Main Use • S w itc h in g R eg u lator

diode S6 39

Abstract: APTC80TDU15P
Contextual Info: APTC80TDU15P Triple dual Common Source VDSS = 800V RDSon = 150mΩ max @ Tj = 25°C ID = 28A @ Tc = 25°C Super Junction MOSFET Power Module G3 G1 G5 S3 S1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies D5 S5

APT0502

Abstract: APTC80TDU15PG
Contextual Info: APTC80TDU15PG Triple dual Common Source VDSS = 800V RDSon = 150mΩ max @ Tj = 25°C ID = 28A @ Tc = 25°C Super Junction MOSFET Power Module G5 S3 S1 S5 S1/S2 S3/S 4 S5/ S6 S2 S4 S6 G2 G4 G6 D2 D4 Features • D6 • • • D1 D3 G1 S1 /S2 D2 S1 D5 G3 S3/S4

si24

Abstract: diode 513 S5
Contextual Info: A N A LO G D E V IC E S CMOS 8- and 16-Channel Analog Multiplexers AD7506/AD7507 FUNCTIONAL DIAGRAMS FEATURES Ron ! 3001Ì Power Dissipation: 1.5mW TTL/DTL/CMOS Direct Interface Break-Before-Make Switching Standard 28-Pin DIPs and 28-Terminal Surface Mount Packages

AD7191BRUZ

Contextual Info: Evaluation Board User Guide UG-280 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Evaluation Board for the AD7191 Pin-Programmable, 24-Bit Σ-Δ ADC FEATURES GENERAL DESCRIPTION

AD7506

Abstract: AD7506KN AD7506KQ AD7506TE AD7506TQ AD7507
Contextual Info: A N A LO G D EVICES CMOS 8- and 16-Channel Analog Multiplexers AD7506/AD7507 FUNCTIONAL DIAGRAMS FEATURES Ron * 300Î1 Power Dissipation: 1.5mW TTL/DTL/CMOS Direct Interface Break-Before-Make Switching Standard 28-Pin DIPs and 28-Terminal Surface Mount Packages

FTC 276

Abstract: SAA7370A TZA1015 TZA1015T saa7348
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TZA1015 Data amplifier and laser supply circuit for CD and read-only optical systems HDALAS Preliminary specification File under Integrated Circuits, IC01 1997 May 16 Philips Semiconductors Preliminary specification Data amplifier and laser supply circuit for CD and

Optical pickup OEIC

Abstract: SAA7370A TZA1015 TZA1015T saa7348 laser diode philips cd
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TZA1015 Data amplifier and laser supply circuit for CD and read-only optical systems HDALAS Preliminary specification File under Integrated Circuits, IC01 1997 May 16 Philips Semiconductors Preliminary specification Data amplifier and laser supply circuit for CD and

GT 1081

Abstract: S5 3000 T1791N
Contextual Info: Freewheeling Diodes Type V D D V(drm) V l(FSM) l (2)d t kA A(2>s kV Tc= -25 .+85°C I(RM) V /kA 2000, 2500 typ 1,25 24 2880 *103 2,62/6,4 3500.4500 3500.4500 3500.4500 4500 4500 4500 4500 4500 6500 typ 2 18 32 45 18 32 4,5 18 32 26 1620 5120 1012

2IL02

Abstract: cd photo diode photo amplifier photo diode amplifier 360J S028 SAA7370A TZA1015 TZA1015T k292
Contextual Info: Philips Semiconductors Preliminary specification Data amplifier and laser supply circuit for CD and read-only optical systems HDALAS TZA1015 The device contains 6 transimpedance amplifiers to amplify and filter the focus and radial photo diode voltage input signals. The preamplifier forms a versatile,

8 pins IC LF 353 n

Abstract: diode S6 31 536 photo Optical pickup OEIC
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TZA1015 Data amplifier and laser supply circuit for CD and read-only optical systems HDALAS Product specification Supersedes data of 1997 May 16 File under Integrated Circuits, IC01 1998 Sep 09 Philips Semiconductors Product specification

Contextual Info: Silicon Variable Capacitance Diode • For UHF and TV/TR tuners • Large capacitance ratio, low series resistance BB 535 1 1 CATHODE 2 ANODE 2 CASE 477– 02, STYLE 1 SOD– 323 MAXIMUM RATINGS Parameter Diode Reverse Voltage Peak reverse voltage R > 5kΩ

S6 diode

Abstract: diode S6 diode s6 28 DIODE T25 DIODE T25 4 DIODE T25 4 do diode S62 DIODE S6 67
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Variable Capacitance Diode • For UHF and TV/TR tuners • Large capacitance ratio, low series resistance BB 535 1 1 CATHODE 2 ANODE 2 CASE 477– 02, STYLE 1 SOD– 323 MAXIMUM RATINGS Parameter Diode Reverse Voltage Peak reverse voltage R > 5kΩ

smd schottky diode s6

Abstract: smd schottky diode s4
Contextual Info: SD103AW,SD103BW,SD103CW 400mW, Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-123 Features ­Low power loss, high current capability, low VF ­Surface device type mounting ­Moisture sensitivity level 1 ­Matte Tin Sn lead finish with Nickel(Ni) underplate

Contextual Info: APTC80TDU15PG Triple dual Common Source VDSS = 800V RDSon = 150mΩ max @ Tj = 25°C ID = 28A @ Tc = 25°C Super Junction MOSFET Power Module D3 D1 G3 G1 G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 Application • AC Switches • Switched Mode Power Supplies

smd schottky diode s6

Abstract: smd schottky diode marking s4 smd schottky diode s4 smd schottky diode s4 SOD-123 smd schottky diode marking s6 S4 DIODE schottky smd schottky diode s6 05 marking code s4 diode MARKING CODE diode sod123 W1 S4 SOD123
Contextual Info: SD103AW,SD103BW,SD103CW 400mW, Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-123 Features —Low power loss, high current capability, low VF —Surface device type mounting —Moisture sensitivity level 1 —Matte Tin Sn lead finish with Nickel(Ni) underplate

Contextual Info: M74HC4514 M74HC4515 SGS-THOMSON iy HC4514:4 TO 16 LINE DECODER/LATCH HC4515: 4 TO 16 LINE DECODER LATCH INV. HIGHSPEED tpD = 18 ns (TYP.) AT Vcc = 5 V LOW POWER DISSIPATION Icc = 4 nA (MAX.) AT Ta = 25 °C HIGH NOISE IMMUNITY V nih = V nil = 28 % Vcc (MIN.)

S4 42 DIODE

Abstract: smd diode g6 DIODE S4 39 smd diode smd diode S4 28 DIODE S4 37
Contextual Info: GWM100-0085X1 VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions