DIODE S4 15 Search Results

sfp transceiver

Contextual Info: PB4-S4-4103L www.palconnusa.com Product Overview The PB4-S4-4103L of Small Form Factor Pluggable SFP transceiver module is specifically designed for high performance integrated single data link over single mode optical fiber. The high-speed laser diode and photo diode are provided as a light source and a detector, respectively. An EEPROM

S4 DIODE schottky

Abstract: MARKING S4 diode schottky s4 schottky diode DIODE marking S4 sod marking code s4 diode sod-523 S4 1SS389 1ss389
Contextual Info: 1SS389 Schottky Barrier Diode SOD-523 Features — Low forward voltage. — Small package. Applications — Dimensions in inches and millimeters Schottky diode in surface mounted circuits. Ordering Information Type No. Marking 1SS389 S4 Package Code SOD-523

S4 DIODE schottky

Abstract: MARKING S4 diode schottky DIODE marking S4 sod S4 1SS389 marking code s4 diode sod-523 1SS389 schottky diode 100A Marking S4 SOD 023 galaxy s4 S4 DIODE
Contextual Info: BL Galaxy Electrical Production specification Schottky Barrier Diode 1SS389 FEATURES z Low forward voltage. z Small package. Pb Lead-free APPLICATIONS z Schottky diode in surface mounted circuits. SOD-523 ORDERING INFORMATION Type No. Marking 1SS389 S4 Package Code

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes SOD-523 1SS389 SCHOTTKY BARRIER DIODE FEATURES     High Speed High Reliability Small Package Low Forward Voltage APPLICATIONS  High Speed Switching MARKING: S4

S4 DIODE schottky PACKAGE T-1

Abstract: SCHOTTKY DIODE S6 09 SD103CWS SD103AWS SD103BWS
Contextual Info: SD103AWS.SD103CWS SURFACE MOUNT SCHOTTKY BARRIER DIODE PINNING DESCRIPTION PIN Features • Low Forward Voltage 1 Cathode 2 Anode 2 1 Top View Marking Code: SD103AWS "S4" SD103BWS "S5" SD103CWS "S6" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC

S4 46a DIODE schottky

Abstract: APT0406 APT0501 APT0502 APTM50HM75SCTG A1012-0
Contextual Info: APTM50HM75SCTG Full bridge Series & SiC parallel diodes MOSFET Power Module VBUS CR1A Q3 G3 CR2A Q2 S3 CR4A CR2B CR4B Q4 G2 G4 S2 S4 0/VBUS NTC1 • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior

Contextual Info: TAK CHEONG 200mW SOD-323 SURFACE MOUNT DEVICE MARKING CODE: Device Device Type Marking 1SS355 S4 Small Outline Flat Lead Plastic Package High Speed Switching Diode Absolute Maximum Ratings Symbol PD TSTG TA = 25°C unless otherwise noted Parameter Power Dissipation

S4 DIODE schottky

Abstract: S4 55 DIODE schottky device marking code S4 SD103 SD103AWS SD103BWS SD103CWS s6 schottky sd103cws semtech
Contextual Info: SD103AWS thru SD103CWS SCHOTTKY DIODE PINNING DESCRIPTION PIN Features • For general purpose applications • The SD103 series is a metal-on-silicon Schottky 1 Cathode 2 Anode 2 1 barrier device which is protected by a PN junction S4 guard ring. • Top View

SD103

Abstract: SD103AWS SD103BWS SD103CWS device marking code S4 DIODE marking S4 sod
Contextual Info: SD103AWS thru SD103CWS SCHOTTKY DIODE PINNING DESCRIPTION PIN Features • For general purpose applications • The SD103 series is a metal-on-silicon Schottky 1 Cathode 2 Anode 2 1 barrier device which is protected by a PN junction S4 guard ring. • Top View

S4 DIODE schottky

Abstract: SD103 SD103AWS SD103BWS SD103CWS sd103cws semtech
Contextual Info: SD103AWS thru SD103CWS SCHOTTKY DIODE PINNING DESCRIPTION PIN Features • For general purpose applications • The SD103 series is a metal-on-silicon Schottky 1 Cathode 2 Anode 2 1 barrier device which is protected by a PN junction S4 guard ring. • Top View

S4 DIODE

Contextual Info: 0 G lû 3 b 2 L IO • MITSUBISHI OPTICAL DEVICES FU-52SDU-F2/S2/F4/S4 DUPLEXER MODULE WITH SINGLEMODE FIBER PIGTAIL (1.3 um LD AND 1.3 miti PD) DESCRIPTION FEATU RES Duplexer module FU-52SDU series incorporate a 1.3um laser diode, an InGaAs photodiode and

Contextual Info: GWM 160-0055P3 VDSS = 55 V = 160 A ID25 RDSon typ. = 2.0 mW Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 L- Conditions VDSS TJ = 25°C to 150°C Maximum Ratings IF25 IF90 TC = 25°C diode

smd diode code SL

Abstract: smd diode g6 DIODE S4 39 smd diode smd diode code g3 SMD mosfet MARKING code TC S4 SMD Marking Code SMD MARKING CODE s4 smd diode code g4 smd diode code s3 smd diode marking s4 smd diode S6
Contextual Info: GWM 160-0055P3 Three phase full Bridge VDSS = 55 V = 160 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 L- Conditions VDSS TJ = 25°C to 150°C Maximum Ratings IF25 IF90 TC = 25°C diode

S4 DIODE sma

Abstract: Diode S4 sma S4L2
Contextual Info: SP4T SWITCHES Components The S4 series of single pole, four throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible

Contextual Info: SP4T SWITCHES Advanced Control Components Inc. The S4 series of single pole, four throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible

Contextual Info: SINGLE-POLE, FOUR-THROW SWITCHES The S4 series of single pole, four throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible

Contextual Info: SINGLE-POLE, FOUR-THROW SWITCHES The S4 series of single pole, four throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible

smd diode code g3

Abstract: smd diode code g4 smd diode g6 DIODE S4 39 smd diode smd diode S4 smd diode code mj smd diode S6 DIODE marking S4 45 SMD S6 55 A smd diode code SL SMD diode MARKING CODE g6
Contextual Info: Advanced Technical Information Three phase full Bridge GWM 160-0055X1 VDSS = 55 V ID25 = 160 A RDSon typ. = 2.3 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C

smd diode S6

Abstract: smd diode S4 S4 DIODE SMD MARKING g5 smd diode g5 smd diode g6 Diode S4 g1 smd diode S3 marking DIODE SMD MARKING s6
Contextual Info: GWM 220-004P3 Three phase full Bridge VDSS = 40 V =1 80 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings

smd diode S4

Contextual Info: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings

smd diode S4

Abstract: smd diode code g3 SMD MARKING CODE 503 K smd diode S6 S4 DIODE S6 diode smd diode marking code L2 SMD MARKING g3 smd diode code s6 SMD MARKING g5
Contextual Info: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings

smd diode g6

Abstract: smd S4 36 SMD diode MARKING CODE g6 smd g5
Contextual Info: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings

Diode smd s6 95

Abstract: DIODE S4 66 smd diode S6 48 Diode smd s6 46 Diode smd s6 68 Diode smd s4 95 SMD MARKING g5 DIODE 542 SMD smd diode code g3 smd diode g6
Contextual Info: GWM 100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 100

Contextual Info: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V ID25 = 160 A RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS