DZ800S17K3
Abstract: FF800R17KE3
Contextual Info: Technische Information / technical information DZ800S17K3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Emitter Controlled³ Diode 62mm C-series module with Emitter Controlled³ diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data
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MOZ 23
Abstract: DD1000S33HE3 48 H diode
Contextual Info: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values
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dd1000s33he3moz 2348 h diode |
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DD1000S33
Abstract: FZ1000R33HE3
Contextual Info: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values
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BAP51-02
Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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m3d319bap51-02od523mam405+2125004/00/02/pp6bp317
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109 DIODE
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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m3d319bap50-02od523mam405+2613512/01/pp8109 diode
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1PS10SB63
Abstract: MARKING S4 diode schottky MLE118 S4 DIODE schottky Schottky barrier sot-23 Marking s4
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW 1PS10SB63 Schottky barrier diode Product specification 2003 Aug 20 Philips Semiconductors Product specification Schottky barrier diode 1PS10SB63 FEATURES DESCRIPTION • Very low diode capacitance An epitaxial Schottky barrier diode encapsulated in a
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m3d8911ps10sb63od882mdb391+6sca75613514/01/pp7marking s4 diode schottkymle118s4 diode schottkyschottky barrier sot-23 marking s4
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAP50-03 SOD-323 GENERAL PURPOSE PIN DIODE FEATURES y Low diode capacitance y Low diode forward resistance MARKING: A81 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate DIODE BAP64-05 PIN DIODE SOT-23 FEATURES z High voltage, current controlled z RF resistor for RF attenuators and switches z Low diode capacitance z Low diode forward resistance z
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE BAP64-05W PIN DIODE SOT-323 FEATURES z High voltage, current controlled z RF resistor for RF attenuators and switches z Low diode capacitance z Low diode forward resistance
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BAP51-02
Abstract: smd diode S4 diode S4 05 AS 15 f
Contextual Info: LESHAN RADIO COMPANY, LTD. General purpose PIN diode BAP51 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79
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bap51od523sc-79bap51-02+3smd diode s4diode s4 05as 15 f
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DIODE S4 74
Abstract: BAP50 BAP50-02 diode DB 3 C
Contextual Info: General purpose PIN diode BAP50 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79 1 CATHODE 2 ANODE
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Contextual Info: DISCRETE SEMICONDUCTORS DAT BAP51-03 General purpose PIN diode Product specification Supersedes data of 1999 Aug 16 2004 Feb 11 NXP Semiconductors Product specification General purpose PIN diode BAP51-03 FEATURES PINNING • Low diode capacitance PIN Low diode forward resistance.
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diode DB 3 C
Abstract: BAP50 BAP50-02
Contextual Info: LESHAN RADIO COMPANY, LTD. General purpose PIN diode BAP50 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79
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diode S4 05
Abstract: smd diode S4 diode smd JS 8 BAP51-02
Contextual Info: General purpose PIN diode BAP51 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79 1 CATHODE 2 ANODE
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bap51od523sc-79diode s4 05+3smd diode s4diode smd js 8bap51-02
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skiip 832 gb 120
Abstract: skiip 832 gb 120 000c SKIIP CASE S4 diode S4 05 SKIIP832GB
Contextual Info: SKiiP 832 GB 120 - 406 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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skiip 832 gb 120skiip 832 gb 120 000cskiip case s4diode s4 05+1skiip832gb
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semikron skiip 1242 gb 120
Abstract: 1000A current sensors M2 1200 DIODE SKiiP 1242 GB 120 . 407 CTV DIODE S4 01 SKIIP CASE S4 DIODE 1000a semikron+skiip+1242+gb+120
Contextual Info: SKiiP 1242 GB 120 - 407 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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semikron skiip 1242 gb 1201000a current sensorsm2 1200 diodeskiip 1242 gb 120 . 407 ctv+4diode s4 01skiip case s4diode 1000asemikron+skiip+1242+gb+120
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Contextual Info: SKiiP 1442 GAR 120 - 414 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and FWD Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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DIODE S4 65
Abstract: gal 900 DIODE S4 38
Contextual Info: SKiiP 1442 GAL 120 - 413 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and FWD Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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DIODE S4 72
Abstract: dv 1602 SKIIP CASE S4 29-04-70
Contextual Info: SKiiP 1602 GB 061 - 459 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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skiip 33 ups 063
Abstract: semikron skiip 33 skiip 33 ups SKIIP CASE S4 skiip gar 170 1000A current sensors
Contextual Info: SKiiP 1092 GB 170 - 474 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 4000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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igbt11rthjs10skiip 33 ups 063semikron skiip 33+4skiip 33 upsskiip case s4skiip gar 1701000a current sensors
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dv 1602
Abstract: DIODE S4 72 29-04-70 semikron skiip 33 SKIIP CASE S4
Contextual Info: SKiiP 1602 GB 061 - 459 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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semikron skiip 1242 gb 120
Abstract: skiip 33 ups 063 semikron skiip 33 skiip gb 120 SKiiP 1242 GB 120 . 407 CTV IGBT 1000A SKIIP CASE S4 semikron 1242 gb 120
Contextual Info: SKiiP 1242 GB 120 - 407 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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igbt11rthjs10semikron skiip 1242 gb 120skiip 33 ups 063+6semikron skiip 33skiip gb 120skiip 1242 gb 120 . 407 ctvigbt 1000askiip case s4semikron 1242 gb 120
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S4 SMD diode mark
Abstract: top mark smd Philips BA792 diode smd mark s4 SOD110 REFLOW Mam1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BA792 Band-switching diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance:
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BA792
Abstract: top mark smd Philips Diode smd code 805 SMD MARKING 541 DIODE 279-27 smd diode marking kda marking code kda smd code marking 777 smd diode marking 77 S4 SMD diode mark
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BA792 Band-switching diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance:
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ba792mam139od110scds47+10117021/1100/01/pp8top mark smd philipsdiode smd code 805smd marking 541 diode279-27smd diode marking kdamarking code kdasmd code marking 777smd diode marking 77s4 smd diode mark
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