DIODE S38 Search Results

Contextual Info: S380Y thru S380ZR Silicon Standard Recovery Diode VRRM = 1600 V - 2000 V IF =380 A Features • High Surge Capability • Types up to 2000 V VRRM DO-9 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

Contextual Info: S380Y thru S380ZR Silicon Standard Recovery Diode VRRM = 1600 V - 2000 V IF =380 A Features • High Surge Capability • Types up to 2000 V VRRM DO-9 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

Contextual Info: S380Y thru S380ZR Silicon Standard Recovery Diode VRRM = 1600 V - 2000 V IF = 380 A Features • High Surge Capability • Types from 1600 V to 2000 V VRRM DO-9 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Contextual Info: SURFACE MOUNT: Super Fast Recovery Schottky & Bridge Rectifiers SUPER FAST RECOVERY DIODE Part CrossMax.Average Peak Peak Fwd Surge Max Forward Max. Reverse Max Reverse Package Number Reference Rect. Current Inverse Current @ 8.3ms Voltage @ Ta 25 C Current @ 25 C Recovery Time

IR photodiode sensor

Abstract: Photodiode Array linear C2334 linear array photodiode element silicon linear photodiode array photodiode linear array 256 C4351 silicon photodiode array Photodiode Array 2d Linear Image sensor IC
Contextual Info: Photodiode Arrays/Linear Image Sensors 16-ELEMENT SILICON PHOTODIODE ARRAY S5668 SERIES For various measuring purpose This photodiode consists of 16 elem ents of Silicon Photodiode having active area of 1.175mm (width X 2.0mm (height) with 1.575mm pitch. This diode is

DIODE SOT-23 PACKAGE

Abstract: dbs107 mmbd2836 Bridge rectifier DF08 s1g 28 diode BAS21 DL4148 LL4148 LL4448 MMBD1402
Contextual Info: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package

d 1667

Abstract: marking bbb2 S380D
Contextual Info: 17E D TELEFUNKEN ELECTRONIC ODD^flflS 1 • ALGG m S 380 D • S 381 D YGiyilHUIMtiM electronic Creative lechnôtogfes 1 Silicon Mesa Diode 01 -1 ST Application: Rectifier Features: • Glass passivated junction • Hermetically sealed package Dim ensions in mm

Contextual Info: 17E D TELEFUNKEN ELECTRONIC ODD^flflS 1 • ALGG m S 380 D • S 381 D YGiyilHUIMtiMelectronic Creative lechnôtogfes Silicon Mesa Diode 1 0 1 - 1 S T Application: Rectifier Features: • Glass passivated junction • Hermetically sealed package D im e n sio n s in m m

aeg diode Si 11 K

Abstract: aeg rectifier aeg diode aeg diode Si 11 AEG TT marking B_Y aeg tt 100 ir 0588 RB1A C177
Contextual Info: A ZG CORP i7e D QOHTHSb o o m a a s 5 m S 380 D • S 381 D T~OI~t$r T ilL lIF ty iK lN electronic Creativo Technologies Silicon Mesa Diode Application: Rectifier Features: Hermetically sealed package • Glass passivated junction Dim ensions in mm Sintered glass case

1n45b

Abstract: 1N48 diode T11G T26G IN283 T13G 1N849 DIODE 1N418 IN457A t20g
Contextual Info: 86D 0 0 3 3 5 _ 3 8 6 9 7 2 0 GENERAL DIO D E CORP GENERAL DIODE CORP fit ù 7 D DÎT| 3flfa17BG 0000335 fl J “ GERMANIUM DIODES Case Style — D0-7 TYPE \ \•% % 1N34 1N34A 1N38 1N38 1N3BA 75 75 36 125 125 1.0 1.0 1.0 1.0 1.0 1N38B 1N44 1N45

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

SS89 transistor

Abstract: BSS89 s 89
Contextual Info: SIEMENS BSS 89 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type b 0.3 A B S S 89 240 V Type B S S 89 B S S 89 B SS 89 Ordering Code Q62702-S519 Q62702-S619 Q62702-S385 ffDS(on) 6Q Package Marking

s380 rectifier

Abstract: S380 S125-1A S380 Diotec data sheet S380 S-801A diode 0.2 V 1A S250-1A S801A S250 DIOTEC
Contextual Info: S40-1A . S380-1A S40-1A . S380-1A Surface Mount Si-Bridge-Rectifiers Si-Brückengleichrichter für die Oberflächenmontage 2.5-0.1 Nominal current Nennstrom 0.2 2.4 -0.1 Version 2007-04-11 2.54 5. +0.2 6.5+0.2 4.7 -0.1 1.0 A Alternating input voltage Eingangswechselspannung

S250F

Contextual Info: S40F . S380F S40F . S380F “Slim” Profile Fast Switching Surface Mount Si-Bridge-Rectifiers Schnelle Si-Brückengleichrichter für die Oberflächenmontage mit „schlanker“ Bauhöhe ±0.1 Nominal current Nennstrom 0.2 1.6 1.5 ±0.1 Version 2012-03-26

S250F

Abstract: S125F S40F S80F
Contextual Info: S40F . S380F S40F . S380F “Slim” Profile Fast Switching Surface Mount Si-Bridge-Rectifiers Schnelle Si-Brückengleichrichter für die Oberflächenmontage mit „schlanker“ Bauhöhe ±0.1 Nominal current Nennstrom 0.2 1.6 1.5 ±0.1 Version 2010-08-09

Contextual Info: S40F . S380F S40F . S380F “Slim” Profile Fast Switching Surface Mount Si-Bridge-Rectifiers Schnelle Si-Brückengleichrichter für die Oberflächenmontage mit „schlanker“ Bauhöhe ±0.1 Nominal current Nennstrom 0.2 1.6 1.5 ±0.1 Version 2012-06-19

S250F

Contextual Info: S40F . S380F S40F . S380F “Slim” Profile Fast Switching Surface Mount Si-Bridge-Rectifiers Schnelle Si-Brückengleichrichter für die Oberflächenmontage mit „schlanker“ Bauhöhe ±0.1 Nominal current Nennstrom 0.2 1.6 1.5 ±0.1 Version 2012-10-09

S250F

Contextual Info: S40F . S380F S40F . S380F “Slim” Profile Fast Switching Surface Mount Si-Bridge-Rectifiers Schnelle Si-Brückengleichrichter für die Oberflächenmontage mit „schlanker“ Bauhöhe ±0.1 Nominal current Nennstrom 0.2 1.6 1.5 ±0.1 Version 2012-06-11

S31-S38

Abstract: s38 marking SFM31 SFM32 SFM33 SFM34 SFM35 SFM36 S34 DO-214AB s34 recovery diode
Contextual Info: S31-S38 Super fast recovery type Features SMC Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.276 7.0 0.260(6.6) For surface mounted applications. 0.012(0.3) Typ. 0.152(3.8)

DIODE s38

Abstract: KS324520 powerex ks32 ks32 S-40
Contextual Info: KS324520 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S lr iQ lG D s r lln Q t O H Transistor Module 200 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in

LC75853E

Abstract: LC75853 LED display for radio AUTO SEARCH TUNING FM RADIO RECEIVER sanyo fm front end 8818 S356A
Contextual Info: Ordering number : EN*4743A CMOS LSI LC7233N-8818 Single-Chip PLL and Controller with LCD Driver Preliminary Overview Package Dimensions The LC7233N-8818 is a single-chip electronic tuning microcontroller that supports control of an electronic tone/volume control IC the LC7538JMD and handles

DIODE s38

Contextual Info: mUUEREX Powerex, inc., 200 HUÎis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 KS324520 Single Darlington Transistor Module 200 Amperes/600 Volts A b so lu te M a x im u m R atin g s, Tj = 25 °C unless otherwise specified Symbol KS324520 Units

Contextual Info: KS324520 Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S iflQ lB D s r lin Q t O H Transistor Module 200 Amperes/600 Volts O U T LIN E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power