DIODE S2 01 Search Results

Contextual Info: 1N6263WS SILICON SCHOTTKY BARRIER DIODE for general purpose applications PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 S2 Top View Marking Code: "S2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Reverse Voltage

marking CODE S2

Contextual Info: 1N6263WS SILICON SCHOTTKY BARRIER DIODE for general purpose applications PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 S2 Top View Marking Code: "S2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Reverse Voltage

Contextual Info: FEA TU R ES • D C -4 5 0 MHz ■ 50£2 or75C2 Terminations ■ 20 Watts CW : ;, p j ■ SMA Connectors ■ Diode Suppression of Switching Transients J3 J2 .xx = .02 .xx x = .010 GUARANTEED PERFORMANCE Œ s sS - S-T W > -J — S2 MIN PARAMETER TYPICAL PERFORMANCE

MCS2400

Abstract: MSC2400 80110h
Contextual Info: G E SOLI» STATE 01 DE Optoelectronic Specifications. Jj 3fl7SQfll □01cIñ7a nr "T-4Í-S7 Photon Coupled Isolator MCS2, MCS2400 GaAs Infrared Em itting Diode & Light Activated SCR IN C H E S M IL L IM E T E R S T he G E Solid State M C S2 and M CS2400 consist o f a gallium

S2L3

Contextual Info: ft* * SP2T SWITCHES sjonffok Components The S2 series of single pole, two throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible

Diode smd s6 95

Abstract: DIODE S4 66 smd diode S6 48 Diode smd s6 46 Diode smd s6 68 Diode smd s4 95 SMD MARKING g5 DIODE 542 SMD smd diode code g3 smd diode g6
Contextual Info: GWM 100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 100

Contextual Info: GWM 100-01X1 Three phase full Bridge VDSS = 100 V ID25 = 90 A RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 100

Contextual Info: GWM 100-01X1 Three phase full Bridge VDSS = 100 V ID25 = 90 A RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 100

smd diode code mj

Abstract: SMD marking code 542 smd diode code g6 9 GWM 100-01X1 smd diode code g4 smd marking BL smd diode code s6 welding mosfet smd diode g6 DIODE S4 39 smd diode TR 505 diode
Contextual Info: Advanced Technical Information Three phase full Bridge GWM 100-01X1 VDSS = 100 V ID25 = 90 A RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C

B170G

Contextual Info: TDK-Lambda HK15A SPECIFICATIONS PA777-01-01C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Item Nominal Output Voltage Maximum Output Current Maximum Output Power Efficiency Typ Input Voltage Range Input Current (Typ) Inrush Current (Typ) Output Voltage Range

DIODE T4

Abstract: DSBT2-S-DC12V DS2E-M-DC24V DIODE t3 DSBT2-M-2D-DC12V DSBT2-M-2D-DC24V DSBT2-S-DC24V LR26550 DSBT2-S-DC5V
Contextual Info: DS-BT DS-BT RELAYS BABT APPROVED DS RELAYS 20.65 .813 BABT CR No.: 0104 UL File No.: E43149 CSA File No.: LR26550 10.65 .419 10.5 .413 • • • • mm inch Approved by BABT Certificate of Recognition 4,000 V breakdown voltage Reinforced insulation between coil and contacts

DSBT2-S-DC12V

Abstract: DIODE T4 RELAY 1500 V LR26550 DSBT2-S-DC24V MBB relay RELAY DC12V DATA SHEET DS2E-M-DC24V DSBT2-M-2D-DC12V DSBT2-M-2D-DC24V LR26550
Contextual Info: DS-BT DS-BT RELAYS BABT APPROVED DS RELAYS 20.65 .813 BABT CR No.: 0104 UL File No.: E43149 CSA File No.: LR26550 10.65 .419 10.5 .413 • • • • mm inch Approved by BABT Certificate of Recognition 4,000 V breakdown voltage Reinforced insulation between coil and contacts

Contextual Info: 2SK3609-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FUJI POWER MOS FET Super FAP-G Series Outline Drawings mm 外形寸法図 OUT VIEW Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Fig.1 Ｐ矢視図参照

HK15A-28

Abstract: CSA23-1 pA777 HK15A-12 HK15A-15 HK15A-24 HK15A-5 KIV-77 OPERATE MANUAL
Contextual Info: DENSEI-LAMBDA HK15A PA777-01-01 A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Item Nominal Output Voltage Maximum Output Current Maximum Oulpul Power Efficiency Typ Input Voltage Range Input Current (Typ) Inrush Current (Typ) Output Voltage Range

diode s4

Abstract: 70-01P2 S6 diode
Contextual Info: GWM 70-01P2 Advanced Technical Information VDSS = 100 V ID25 = 70 A Ω RDSon typ. = 11 mΩ Three phase full bridge with Trench MOSFETs in DCB isolated high current package L+ G3 G5 S3 S5 Pins Gate G1 S1 L1 L2 L3 G4 G6 S4 S6 G2 S2 Pow s er Pin L- Applications

DIODE marking S6 57

Abstract: DIODE marking S4 57 smd diode code s1 96 GMM3x60-015X1 DIODE marking S6 96 smd diode .S6 22 smd diode S4 96 smd diode g6 Control of Starter-generator S4 DIODE
Contextual Info: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings

Contextual Info: 2SK3613-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER FUJI POWER MOS FET MOSFET Super FAP-G Series OUT VIEW Outline Drawings Drawings mm (mm) 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

power supply 100v 30a schematic

Abstract: 2SK3597-01
Contextual Info: 2SK3597-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER FUJI POWER MOS FET MOSFET Super FAP-G Series OUT VIEW Outline Drawings mm 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Fig.1 Ｐ矢視図参照

Contextual Info: 2SK3605-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER FUJI POWER MOS FET MOSFET Super FAP-G Series OUT VIEW Outline Drawings mm 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Fig.1 Ｐ矢視図参照

2SK3593-01

Contextual Info: 2SK3593-01 FUJI POWER MOSFET FUJI POWER MOS FET MOSFET N-CHANNEL SILICON POWER Super FAP-G Series OUT VIEW Outline Drawings mm 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Fig.1 Ｐ矢視図参照

Control of Starter-generator

Abstract: starter/generator
Contextual Info: GWM 70-01P2 Advanced Technical Information VDSS = 100 V ID25 = 70 A Ω RDSon typ. = 11 mΩ Three phase full bridge with Trench MOSFETs in DCB isolated high current package Pins Gate L+ G3 G5 S3 S5 G1 S1 L1 L2 L3 G4 G6 S4 S6 G2 S2 Pow s er Pin t L- Applications

C-123

Abstract: 2SK3589-01 n-channel, 75v, 50a
Contextual Info: 2SK3589-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FUJI POWER MOS FET Super FAP-G Series OUT VIEW Outline Drawings mm 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Fig.1 Ｐ矢視図参照

2sk3601

Abstract: 2SK3601-01
Contextual Info: 2SK3601-01 FUJI POWER MOSFET FUJI POWER MOS FET MOSFET N-CHANNEL SILICON POWER Super FAP-G Series OUT VIEW Outline Drawings mm 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Fig.1 Ｐ矢視図参照

Diode smd s6 95

Abstract: DIODE marking S4 45 L3 code smd diode g6 smd diode S5 S3 marking DIODE Diode smd s6 68
Contextual Info: GMM 3x100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 S4 S6 G2 S2 L1- L3+ L3 L2- L3- Applications MOSFETs Conditions Maximum Ratings