DIODE S1 77 Search Results

DIODE G7

Abstract: VVZB 120-16 io2
Contextual Info: VVZB 120 VRRM = 1200/1600 V IdAV = 120 A Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary data VRRM O1 S1 Type V 1200 1600 VVZB 120-12 io2 VVZB 120-16 io2 M1 I1 E1 W1 L7 G7 C7 O10 W10 Conditions

Contextual Info: VVZB 120 VRRM = 1200/1600 V IdAV = 120 A Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary data VRRM O1 S1 Type M1 I1 E1 V 1200 1600 VVZB 120-12 io2 VVZB 120-16 io2 W1 L7 G7 C7 O10 IdAV IFRMS/ITRMS

AIR FLOW DETECTOR CIRCUIT DIAGRAM

Abstract: monochrome TV flyback schematic CA1391 DIODE S2 S4 DIODE s7 200 zener 150v 1w CA139 CA1391E CA1394
Contextual Info: CA1391, CA1394 UCT OBSOLETE PROD REPLACEMENT NO RECOMMENDED ns 1-800-442-7747 Call Central Applicatio harris.com or email: centapp@ May 1999 [ /Title CA13 91, CA139 4 /Subject (TV Horizontal Processors) /Autho r () /Keywords (Harris Semiconductor, TV horizontal

Contextual Info: 5 2 3 3 /3 8 , 5 4 5 8 / 63 / 74 , 5604 , 2-FUNCTION 4-DIGIT VF AUTOMOTIVE CLOCKS SC L5604E <01 LAMP S2 Q" S1 771 NU [~£ 3Ì~| NU S3 [j" IGNtTKX [1_ I t] C1 0? NU Tn 62 f2 34~| 02 a2 j* Tri c2 t>2 ¿T] g3 t 1 TESI (To Til e3 COLON [TT Til c3 t) [tT ¿U îl_] e*

SUD50NP04-77P

Abstract: a2240
Contextual Info: New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V

SUD50NP04-77P

Contextual Info: New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V

MAX6685

Contextual Info: 19-2459; Rev 1; 1/03 Dual-Output Remote-Junction Temperature Switches Features ♦ Pin-Programmed Lower Temperature Threshold from +40°C to +80°C or +75°C to +115°C 5°C Increments ♦ Preset Upper Threshold: +120°C or +125°C ♦ Open-Drain, Active-Low Output for Upper

Contextual Info: Dual N-channel MOSFET ELM14828AA-N •General description ■Features ELM14828AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • Vds=60V Id=4.5A (Vgs=10V) Rds(on) < 56mΩ (Vgs=10V) Rds(on) < 77mΩ (Vgs=4.5V)

EE16 12V

Abstract: SMD TRANSISTOR B7 EE16 transformer 5v 2.1a t1/epc17 TRANSFORMER smd transistor 12W 3 pins EE16-4 core transformer
Contextual Info: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT41X Rev 1.4 JUL 2013 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History 2013 - Jul - 22 Rev 1.4 Page 4.5 Update ACT410 5V2.1A application solution transformer and parameter.

EE16-4 core transformer

Abstract: EE16 transformer 5v 2.1a
Contextual Info: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT41X Rev 1.5 Jan 2014 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History 2014 - Jan - 23 Rev 1.5 Page 4.5 Update ACT410 5V2.1A application solution transformer and parameter.

MAX6685

Abstract: MAX6685AU40L
Contextual Info: 19-2459; Rev 2; 4/03 Dual-Output Remote-Junction Temperature Switches Features ♦ Pin-Programmed Lower Temperature Threshold from +40°C to +80°C or +75°C to +115°C 5°C Increments ♦ Preset Upper Threshold: +120°C or +125°C ♦ Open-Drain, Active-Low Output for Upper

SUD50NP04-77P

Abstract: TO-252-4L 74439 complementary MOSFET TO252
Contextual Info: New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V

SUD50NP04-77P

Contextual Info: New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V

3V to 300V dc dc converter

Abstract: 52V Dc voltage regulator ic DIODE 1n5819 sunplus camera SPY0016A SW203
Contextual Info: SPY0016A STEP-UP DC/DC CONVERTER GENERAL DESCRIPTION The circuit is a high efficiency step-up DC/DC converter IC equipped with a voltage regulator and a voltage detector by CMOS process. The SPY0016A is an output-voltage-fixed type regulator consists of a PWM

Diode smd s6 68

Abstract: S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

SMD MARKING code L1

Abstract: smd diode g6 DIODE S4 39 smd diode smd diode marking code L2 smd diode S6 DIODE smd marking l3 smd diode s4 smd diode code mj smd diode g5 SMD MARKING g5 SMD mosfet MARKING code TJ
Contextual Info: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

1N4001 zener diode

Abstract: LM2575-ADJ Car Battery 12V pulse charger diode 1n5819 1N4001 general diode sample schematic diagram 12v battery charger LM2575 step up converter 12V DC to 19V dC converter schematic diagram schematic diagram 24V NiMh charge controller 12V cell phone charger circuit diagram
Contextual Info: Order this document by AN1593/D Motorola Semiconductor Application Note AN1593 High Efficiency 1A Battery Charger Using the LM2575-ADJ and MC33341 PRELIMINARY INFORMATION by Ondrej Pauk Industrial System Application Laboratory, Roznov CZ Figure 1. High Efficiency Battery Charger Demonstration Board.

amd am2 socket pin diagram

Abstract: Socket S1g1 Processor Functional Socket AM2 Processor Functional AM2 31117 PS2251 am2 socket pin diagram socket s1g1 vss 31117 amd am2 pin diagram amd publication 31117
Contextual Info: AMD NPT Family 0Fh Processor Electrical Data Sheet Publication # 31119 Revision: 3.00 Issue Date: August 2006 Advanced Micro Devices 2004–2006 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices,

LM2575-ADJ

Abstract: LM2575 step up converter diode 1N4001 specifications universal cell phone charger circuit diagram car battery charger circuit diagram 77458bv LM2575 diode u2 MC33341 trickle battery charger circuit based on zener an
Contextual Info: Order this document by AN1593/D AN1593 Low Cost 1.0 A Current Source For Battery Chargers Prepared by: Ondrej Pauk Industrial System Application Laboratory Roznov, CZ Figure 1. Low Cost Current Source for Battery Chargers Demonstration Board This paper describes two designs of low cost current

Contextual Info: Rail transportation isolated DC-DC converters RailQor EN 50155 / RIA-12 Compliance & Evaluation Board Application Note SynQor has developed the ruggedized RailQor product line for the harsh environments associated with railway transportation electronics. The European

S4 42 DIODE

Abstract: smd diode S6 smd diode code g3 DIODE marking S6 77 smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode code g2 SMD SL DIODE S4 37
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

S4 42 DIODE

Abstract: smd diode g6 DIODE S4 39 smd diode smd diode S4 28 DIODE S4 37
Contextual Info: GWM100-0085X1 VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

MAX6687UA75H

Abstract: MAX6688 MAX6688UA75L MAX6687 MAX6687UA40H
Contextual Info: 19-2636; Rev 1; 1/03 Local/Remote Temperature Switches in a µMAX Package Features ♦ Pin-Programmable Local Temperature Threshold in 5°C Increments in Two Distinct Ranges: +40°C to +80°C and +75°C to +115°C The MAX6687 has two open-drain active-low outputs

MAX6687

Abstract: MAX6688 s277
Contextual Info: 19-2636; Rev 0; 10/02 Local/Remote Temperature Switches in a µMAX Package Features ♦ Pin-Programmable Local Temperature Threshold in 5°C Increments in Two Distinct Ranges: +40°C to +80°C and +75°C to +115°C The MAX6687 has two open-drain active-low outputs