DIODE S1 77 Search Results

DIODE G7

Abstract: VVZB 120-16 io2
Contextual Info: VVZB 120 VRRM = 1200/1600 V IdAV = 120 A Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary data VRRM O1 S1 Type V 1200 1600 VVZB 120-12 io2 VVZB 120-16 io2 M1 I1 E1 W1 L7 G7 C7 O10 W10 Conditions

Contextual Info: VVZB 120 VRRM = 1200/1600 V IdAV = 120 A Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary data VRRM O1 S1 Type M1 I1 E1 V 1200 1600 VVZB 120-12 io2 VVZB 120-16 io2 W1 L7 G7 C7 O10 IdAV IFRMS/ITRMS

Contextual Info: VVZB 120 VRRM = 1200/1600 V IdAV = 120 A Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary data VRRM O1 S1 Type M1 I1 E1 V 1200 1600 VVZB 120-12 io2 VVZB 120-16 io2 W1 L7 G7 C7 O10 W10 Tcase= 80°C, sinusoidal 120°

MIL-STD-12

Abstract: 1N4500 Krypton-85
Contextual Info: MI l - S - I 9 5 0 0 /U 0 3 USAF B J u l y I9 6 8 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPE 1N 4500 and TX1N4500 1. SCOPE 1 S1 S c o p e » T h is s p e c i f i c a t i o n c o v e r s t h e d e t a i l r e q u ir e m e n ts f o r s i l i c o n ,

AIR FLOW DETECTOR CIRCUIT DIAGRAM

Abstract: monochrome TV flyback schematic CA1391 DIODE S2 S4 DIODE s7 200 zener 150v 1w CA139 CA1391E CA1394
Contextual Info: CA1391, CA1394 UCT OBSOLETE PROD REPLACEMENT NO RECOMMENDED ns 1-800-442-7747 Call Central Applicatio harris.com or email: centapp@ May 1999 [ /Title CA13 91, CA139 4 /Subject (TV Horizontal Processors) /Autho r () /Keywords (Harris Semiconductor, TV horizontal

Contextual Info: 5 2 3 3 /3 8 , 5 4 5 8 / 63 / 74 , 5604 , 2-FUNCTION 4-DIGIT VF AUTOMOTIVE CLOCKS SC L5604E <01 LAMP S2 Q" S1 771 NU [~£ 3Ì~| NU S3 [j" IGNtTKX [1_ I t] C1 0? NU Tn 62 f2 34~| 02 a2 j* Tri c2 t>2 ¿T] g3 t 1 TESI (To Til e3 COLON [TT Til c3 t) [tT ¿U îl_] e*

AO4612

Abstract: AO4612L
Contextual Info: AO4612 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel VDS V = 60V ID = 4.5A (VGS=10V) RDS(ON) < 56mΩ (VGS=10V) < 77mΩ (VGS=4.5V) The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The

SUD50NP04-77P

Contextual Info: New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V

SUD50NP04-77P

Abstract: a2240
Contextual Info: New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V

SUD50NP04-77P

Contextual Info: New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V

HI1-0381-2

Abstract: HI1-0381-5 HI1-0384-2 HI2-0381-2 HI2-0381-5 HI3-0381-5 HI-381 HI-387
Contextual Info: [ /Title /Subject () /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark HI-381 thru HI-387 UCT TE PROD E PRODUCT OBSOLE ITUT E SUBST -7747 L IB S S O P Sheet cations 1-800-442 FOR AData li p m p is.co al A call Centr il: centapp@harr

MAX6685

Contextual Info: 19-2459; Rev 1; 1/03 Dual-Output Remote-Junction Temperature Switches Features ♦ Pin-Programmed Lower Temperature Threshold from +40°C to +80°C or +75°C to +115°C 5°C Increments ♦ Preset Upper Threshold: +120°C or +125°C ♦ Open-Drain, Active-Low Output for Upper

kst3904-tf

Abstract: Temperature Switches MAX6685 MAX6685AUA40H MAX6685AUA40L MAX6685AUA75H MAX6685AUA75L MAX6686 MAX6686AUA40H MAX6686AUA40L
Contextual Info: 19-2459; Rev 0; 4/02 Dual-Output Remote-Junction Temperature Switches Features ♦ Pin-Programmed Lower Temperature Threshold from +40°C to +80°C or +75°C to +115°C 5°C Increments ♦ Preset Upper Threshold: +120°C or +125°C ♦ Open-Drain, Active-Low Output for Upper

Contextual Info: Dual N-channel MOSFET ELM14828AA-N •General description ■Features ELM14828AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • Vds=60V Id=4.5A (Vgs=10V) Rds(on) < 56mΩ (Vgs=10V) Rds(on) < 77mΩ (Vgs=4.5V)

EE16-4 core transformer

Abstract: EE16 transformer 5v 2.1a
Contextual Info: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT41X Rev 1.5 Jan 2014 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History 2014 - Jan - 23 Rev 1.5 Page 4.5 Update ACT410 5V2.1A application solution transformer and parameter.

MAX6685

Abstract: MAX6685AU40L
Contextual Info: 19-2459; Rev 2; 4/03 Dual-Output Remote-Junction Temperature Switches Features ♦ Pin-Programmed Lower Temperature Threshold from +40°C to +80°C or +75°C to +115°C 5°C Increments ♦ Preset Upper Threshold: +120°C or +125°C ♦ Open-Drain, Active-Low Output for Upper

FERRITE core TRANSFORMER

Abstract: V14220 transformer less power supply 6v output Ericsson Base Station TANTAL C-16 thyristor TD 42 F
Contextual Info: May 1997 PBL 3755 PCM-Repeater Description Key Features The PBL 3755 is a bipolar integrated circuit that contains all the necessary functions to form a regenerative repeater for Pulse Code Modulated PCM telecommunications systems. The circuit is designed to operate at 2.048 Mbps CEPT lines with HDB3 code

14.507.02502

Abstract: 14-271.0252 704.928.38 14-271-0252
Contextual Info: EAO – Your Expert Partner for Human Machine Interfaces EAO Product Information Series 14 Switches and Indicators 14 Contents 14 Description . 3 Product Assembly . 4

230V ac to 5V dc usb charger circuit

Abstract: SAMA5 RK3026 s3c2416 charger pad wide
Contextual Info: Contents 1. High Power DC-DC Converter Products ………………….………………………….………….………….….…. 3 1.1 DC-DC Product Selection Guide …….………………………………………………………………………….……. 4

SUD50NP04-77P

Abstract: TO-252-4L 74439 complementary MOSFET TO252
Contextual Info: New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V

SUD50NP04-77P

Contextual Info: New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V

3V to 300V dc dc converter

Abstract: 52V Dc voltage regulator ic DIODE 1n5819 sunplus camera SPY0016A SW203
Contextual Info: SPY0016A STEP-UP DC/DC CONVERTER GENERAL DESCRIPTION The circuit is a high efficiency step-up DC/DC converter IC equipped with a voltage regulator and a voltage detector by CMOS process. The SPY0016A is an output-voltage-fixed type regulator consists of a PWM

SUD50NP04-77P

Abstract: W2114
Contextual Info: New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V

Diode smd s6 68

Abstract: S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions