DIODE S1 77 Search Results

DIODE G7

Abstract: VVZB 120-16 io2
Contextual Info: VVZB 120 VRRM = 1200/1600 V IdAV = 120 A Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary data VRRM O1 S1 Type V 1200 1600 VVZB 120-12 io2 VVZB 120-16 io2 M1 I1 E1 W1 L7 G7 C7 O10 W10 Conditions

Contextual Info: VVZB 120 VRRM = 1200/1600 V IdAV = 120 A Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary data VRRM O1 S1 Type M1 I1 E1 V 1200 1600 VVZB 120-12 io2 VVZB 120-16 io2 W1 L7 G7 C7 O10 IdAV IFRMS/ITRMS

Contextual Info: VVZB 120 VRRM = 1200/1600 V IdAV = 120 A Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary data VRRM O1 S1 Type M1 I1 E1 V 1200 1600 VVZB 120-12 io2 VVZB 120-16 io2 W1 L7 G7 C7 O10 W10 Tcase= 80°C, sinusoidal 120°

MIL-STD-12

Abstract: 1N4500 Krypton-85
Contextual Info: MI l - S - I 9 5 0 0 /U 0 3 USAF B J u l y I9 6 8 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPE 1N 4500 and TX1N4500 1. SCOPE 1 S1 S c o p e » T h is s p e c i f i c a t i o n c o v e r s t h e d e t a i l r e q u ir e m e n ts f o r s i l i c o n ,

AIR FLOW DETECTOR CIRCUIT DIAGRAM

Abstract: monochrome TV flyback schematic CA1391 DIODE S2 S4 DIODE s7 200 zener 150v 1w CA139 CA1391E CA1394
Contextual Info: CA1391, CA1394 UCT OBSOLETE PROD REPLACEMENT NO RECOMMENDED ns 1-800-442-7747 Call Central Applicatio harris.com or email: centapp@ May 1999 [ /Title CA13 91, CA139 4 /Subject (TV Horizontal Processors) /Autho r () /Keywords (Harris Semiconductor, TV horizontal

Contextual Info: 5 2 3 3 /3 8 , 5 4 5 8 / 63 / 74 , 5604 , 2-FUNCTION 4-DIGIT VF AUTOMOTIVE CLOCKS SC L5604E <01 LAMP S2 Q" S1 771 NU [~£ 3Ì~| NU S3 [j" IGNtTKX [1_ I t] C1 0? NU Tn 62 f2 34~| 02 a2 j* Tri c2 t>2 ¿T] g3 t 1 TESI (To Til e3 COLON [TT Til c3 t) [tT ¿U îl_] e*

VHC153

Abstract: ZN 3055
Contextual Info: bSOllSS 00777SS 77t e*> io National Semiconductor PRELIMINARY 74VHC153 Dual 4-Input Multiplexer General Description Features The VHC153 is an advanced high-speed CMOS device fab­ ricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky

AO4612

Abstract: AO4612L
Contextual Info: AO4612 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel VDS V = 60V ID = 4.5A (VGS=10V) RDS(ON) < 56mΩ (VGS=10V) < 77mΩ (VGS=4.5V) The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The

SUD50NP04-77P

Contextual Info: New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V

SUD50NP04-77P

Abstract: a2240
Contextual Info: New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V

SUD50NP04-77P

Contextual Info: New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V

HI1-0381-2

Abstract: HI1-0381-5 HI1-0384-2 HI2-0381-2 HI2-0381-5 HI3-0381-5 HI-381 HI-387
Contextual Info: [ /Title /Subject () /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark HI-381 thru HI-387 UCT TE PROD E PRODUCT OBSOLE ITUT E SUBST -7747 L IB S S O P Sheet cations 1-800-442 FOR AData li p m p is.co al A call Centr il: centapp@harr

Contextual Info: Dual N-channel MOSFET ELM14828AA-N •General description ■Features ELM14828AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • Vds=60V Id=4.5A (Vgs=10V) Rds(on) < 56mΩ (Vgs=10V) Rds(on) < 77mΩ (Vgs=4.5V)

MAX6685

Contextual Info: 19-2459; Rev 1; 1/03 Dual-Output Remote-Junction Temperature Switches Features ♦ Pin-Programmed Lower Temperature Threshold from +40°C to +80°C or +75°C to +115°C 5°C Increments ♦ Preset Upper Threshold: +120°C or +125°C ♦ Open-Drain, Active-Low Output for Upper

MAX6685

Abstract: MAX6685AU40L pnp npn dual emitter connected MAX6685AU40H MAX6685AU75H MAX6685AU75L MAX6686 MAX6686AU40H MAX6686AU40L MAX6686AU75L
Contextual Info: 19-2459; Rev 2; 4/03 Dual-Output Remote-Junction Temperature Switches Features ♦ Pin-Programmed Lower Temperature Threshold from +40°C to +80°C or +75°C to +115°C 5°C Increments ♦ Preset Upper Threshold: +120°C or +125°C ♦ Open-Drain, Active-Low Output for Upper

Contextual Info: Dual N-channel MOSFET ELM14828AA-N •General description ■Features ELM14828AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • Vds=60V Id=4.5A (Vgs=10V) Rds(on) < 56mΩ (Vgs=10V) Rds(on) < 77mΩ (Vgs=4.5V)

EE16 12V

Abstract: SMD TRANSISTOR B7 EE16 transformer 5v 2.1a t1/epc17 TRANSFORMER smd transistor 12W 3 pins EE16-4 core transformer
Contextual Info: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT41X Rev 1.4 JUL 2013 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History 2013 - Jul - 22 Rev 1.4 Page 4.5 Update ACT410 5V2.1A application solution transformer and parameter.

EE16-4 core transformer

Abstract: EE16 transformer 5v 2.1a
Contextual Info: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT41X Rev 1.5 Jan 2014 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History 2014 - Jan - 23 Rev 1.5 Page 4.5 Update ACT410 5V2.1A application solution transformer and parameter.

MAX6685

Abstract: MAX6685AU40L
Contextual Info: 19-2459; Rev 2; 4/03 Dual-Output Remote-Junction Temperature Switches Features ♦ Pin-Programmed Lower Temperature Threshold from +40°C to +80°C or +75°C to +115°C 5°C Increments ♦ Preset Upper Threshold: +120°C or +125°C ♦ Open-Drain, Active-Low Output for Upper

RK3026

Abstract: SAMA5 10w led diode charger pad wide REGULATOR sw 13003 10kk thermistor SC053
Contextual Info: Contents 1. High Power DC-DC Converter Products ………………….………………………….………….…………………. 3 1.1 DC-DC Product Selection Guide …….………………………………………………………………………………. 4

FERRITE core TRANSFORMER

Abstract: V14220 transformer less power supply 6v output Ericsson Base Station TANTAL C-16 thyristor TD 42 F
Contextual Info: May 1997 PBL 3755 PCM-Repeater Description Key Features The PBL 3755 is a bipolar integrated circuit that contains all the necessary functions to form a regenerative repeater for Pulse Code Modulated PCM telecommunications systems. The circuit is designed to operate at 2.048 Mbps CEPT lines with HDB3 code

14.507.02502

Abstract: 14-271.0252 704.928.38 14-271-0252
Contextual Info: EAO – Your Expert Partner for Human Machine Interfaces EAO Product Information Series 14 Switches and Indicators 14 Contents 14 Description . 3 Product Assembly . 4

230V ac to 5V dc usb charger circuit

Abstract: SAMA5 RK3026 s3c2416 charger pad wide
Contextual Info: Contents 1. High Power DC-DC Converter Products ………………….………………………….………….………….….…. 3 1.1 DC-DC Product Selection Guide …….………………………………………………………………………….……. 4

SUD50NP04-77P

Abstract: TO-252-4L 74439 complementary MOSFET TO252
Contextual Info: New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V