DIODE S1 61 Search Results
DIODE S1 61 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
| CUZ24V |
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Zener Diode, 24 V, USC | Datasheet | ||
| CUZ16V |
|
Zener Diode, 16 V, USC | Datasheet |
DIODE S1 61 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
ap6900gsmContextual Info: AP6900GSM Pb Free Plating Product Advanced Power Electronics Corp. DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE CH-1 S1/D2 S1/D2 S1/D2 G1 ▼ Simple Drive Requirement ▼ DC-DC Converter Suitable ▼ Fast Switching Performance S2/A G2 SO-8 CH-2 D1 D1 Description |
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AP6900GSM ap6900gsm | |
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Contextual Info: SPST SWITCHES Advanced c o n tro l C o m m o n «« The S1 series of single pole, single throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of |
OCR Scan |
10MHz 18GHz L-STD-202F, MIL-STD-202F, M105C, 26GHz MIL-STD-883 /-12V, /-15V | |
Si4816DY
Abstract: Si4816DY-T1-E3
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Si4816DY 2002/95/EC 11-Mar-11 Si4816DY-T1-E3 | |
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Contextual Info: Si1967DH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.3a 0.640 at VGS = - 2.5 V - 1.2 0.790 at VGS = - 1.8 V - 1.0 • Halogen-free According to IEC 61249-2-21 Definition |
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Si1967DH 2002/95/EC OT-363 SC-70 Si1967DH-T1-E3electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Si4340DY-T1-E3
Abstract: Si4340DY
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Si4340DY 2002/95/EC SO-14 18-Jul-08 Si4340DY-T1-E3 | |
si1922
Abstract: SI1922EDH
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Si1922EDH 2002/95/EC OT-363 SC-70 Si1922EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si1922 | |
Si4310BDYContextual Info: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21 |
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Si4310BDY 2002/95/EC SO-14 11-Mar-11 | |
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Contextual Info: Si4310BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.011 at VGS = 10 V 10 0.016 at VGS = 4.5 V 8.2 0.0085 at VGS = 10 V 14 0.0095 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21 |
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Si4310BDY 2002/95/EC SO-14 18-Jul-08 | |
74398
Abstract: si1972dh SI1972DH-T1-GE3 Si1972DH-T1-E3
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Si1972DH 2002/95/EC OT-363 SC-70 Si1972DH-T1-E3 Si1972DH-T1-GE3 18-Jul-08 74398 | |
74296
Abstract: SOT-363 marking CF si1988 061B SI1988DH-T1-E3
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Si1988DH 2002/95/EC OT-363 SC-70 Si1988DH-T1-E3 Si1988DH-T1-GE3 18-Jul-08 74296 SOT-363 marking CF si1988 061B | |
Si3909DVContextual Info: Si3909DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.200 at VGS = - 4.5 V ± 1.8 - 20 0.235 at VGS = - 3.6 V ± 1.6 0.340 at VGS = - 2.5 V ± 1.3 • Halogen-free According to IEC 61249-2-21 Definition |
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Si3909DV 2002/95/EC Si3909DV-T1-E3 Si3909DV-T1-GE3 18-Jul-08 | |
Si3951DV-T1-GE3
Abstract: Si3951DV Si3951DV-T1-E3
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Si3951DV 2002/95/EC Si3951DV-T1-E3 Si3951DV-T1-GE3 18-Jul-08 | |
Si1926DL-T1-GE3
Abstract: SI1926DL-T1-E3
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Si1926DL 2002/95/EC OT-363 SC-70 Si1926DL-T1-E3 Si1926DL-T1-GE3 18-Jul-08 | |
si1965Contextual Info: Si1965DH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 12 ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) a |
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Si1965DH 2002/95/EC OT-363 SC-70 Si1965DH-T1-E3 Si1965DH-T1-GE3 18-Jul-08 si1965 | |
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Si4214DDY
Abstract: SI4214DD si4214
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Si4214DDY 2002/95/EC Si4214DDY-T1-GE3 18-Jul-08 SI4214DD si4214 | |
SI1967DH-T1-GE3
Abstract: Si1967DH si1967
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Si1967DH 2002/95/EC OT-363 SC-70 Si1967DH-T1-E3 18-Jul-08 SI1967DH-T1-GE3 si1967 | |
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Contextual Info: Si4922BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, e 0.016 at VGS = 10 V 8 30 0.018 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si4922BDY 2002/96/EC Si4922BDY-T1-E3 Si4922BDY-T1-GE3 18-Jul-08 | |
SI1958
Abstract: 74340 Si1958DH Si1958DH-T1-E3 Si1958DH-T1-GE3
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Si1958DH 2002/95/EC OT-363 SC-70 Si1958DH-T1-E3 Si1958DH-T1-GE3 18-Jul-08 SI1958 74340 | |
si4204Contextual Info: Si4204DY Vishay Siliconix Dual N-Channel 20 V MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0046 at VGS = 10 V 19.8a 0.006 at VGS = 4.5 V 17.3a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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Si4204DY 2002/95/EC Si4204DY-T1-GE3 18-Jul-08 si4204 | |
Si3911DV
Abstract: us50-24
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Si3911DV 2002/95/EC Si3911DV-T1-E3 Si3911DV-T1-GE3 18-Jul-08 us50-24 | |
Si3905DV
Abstract: Si3905DV-T1-E3
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Si3905DV 2002/95/EC Si3905DV-T1-E3 Si3905DV-T1-GE3 18-Jul-08 | |
Si4906DY-T1-E3
Abstract: Si4906DY-T1-GE3 DIODE D2 SI4906DY
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Si4906DY 2002/95/EC Si4906DY-T1-E3 Si4906DY-T1-GE3 18-Jul-08 DIODE D2 | |
Si4948EYContextual Info: Si4948EY Vishay Siliconix Dual P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V ± 2.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs |
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Si4948EY 2002/95/EC Si4948EY-T1-E3 Si4948EY-T1-GE3 18-Jul-08 | |
Si9945AEY-T1-E3
Abstract: Si9945AEY SI9945 Si9945AEY-T1-GE3 SI9945A
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Si9945AEY 2002/95/EC Si9945AEY-T1-E3 Si9945AEY-T1-GE3 18-Jul-08 SI9945 SI9945A | |