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    DIODE S1 61 Search Results

    DIODE S1 61 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ20V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Datasheet
    CUZ24V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Datasheet
    CUZ16V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Datasheet

    DIODE S1 61 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ap6900gsm

    Contextual Info: AP6900GSM Pb Free Plating Product Advanced Power Electronics Corp. DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE CH-1 S1/D2 S1/D2 S1/D2 G1 ▼ Simple Drive Requirement ▼ DC-DC Converter Suitable ▼ Fast Switching Performance S2/A G2 SO-8 CH-2 D1 D1 Description


    Original     		AP6900GSM ap6900gsm PDF

    Contextual Info: SPST SWITCHES Advanced c o n tro l C o m m o n «« The S1 series of single pole, single throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of


    OCR Scan     		10MHz 18GHz L-STD-202F, MIL-STD-202F, M105C, 26GHz MIL-STD-883 /-12V, /-15V PDF

    Si4816DY

    Abstract: Si4816DY-T1-E3
    Contextual Info: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 6.3 0.030 at VGS = 4.5 V 5.4 0.013 at VGS = 10 V 10 0.0185 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21


    Original     		Si4816DY 2002/95/EC 11-Mar-11 Si4816DY-T1-E3 PDF

    si1922

    Abstract: SI1922EDH
    Contextual Info: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21


    Original     		Si1922EDH 2002/95/EC OT-363 SC-70 Si1922EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si1922 PDF

    Si3909DV

    Contextual Info: Si3909DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.200 at VGS = - 4.5 V ± 1.8 - 20 0.235 at VGS = - 3.6 V ± 1.6 0.340 at VGS = - 2.5 V ± 1.3 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si3909DV 2002/95/EC Si3909DV-T1-E3 Si3909DV-T1-GE3 18-Jul-08 PDF

    Si3951DV-T1-GE3

    Abstract: Si3951DV Si3951DV-T1-E3
    Contextual Info: Si3951DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.115 at VGS = - 4.5 V - 2.7 0.205 at VGS = - 2.5 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si3951DV 2002/95/EC Si3951DV-T1-E3 Si3951DV-T1-GE3 18-Jul-08 PDF

    Si1926DL-T1-GE3

    Abstract: SI1926DL-T1-E3
    Contextual Info: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si1926DL 2002/95/EC OT-363 SC-70 Si1926DL-T1-E3 Si1926DL-T1-GE3 18-Jul-08 PDF

    si1965

    Contextual Info: Si1965DH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 12 ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) a


    Original     		Si1965DH 2002/95/EC OT-363 SC-70 Si1965DH-T1-E3 Si1965DH-T1-GE3 18-Jul-08 si1965 PDF

    Contextual Info: Si4922BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, e 0.016 at VGS = 10 V 8 30 0.018 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4922BDY 2002/96/EC Si4922BDY-T1-E3 Si4922BDY-T1-GE3 18-Jul-08 PDF

    SI1958

    Abstract: 74340 Si1958DH Si1958DH-T1-E3 Si1958DH-T1-GE3
    Contextual Info: Si1958DH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a Qg (Typ.) a 0.205 at VGS = 4.5 V 1.3 0.340 at VGS = 2.5 V 1.3a 1.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si1958DH 2002/95/EC OT-363 SC-70 Si1958DH-T1-E3 Si1958DH-T1-GE3 18-Jul-08 SI1958 74340 PDF

    si4204

    Contextual Info: Si4204DY Vishay Siliconix Dual N-Channel 20 V MOSFET FEATURES PRODUCT SUMMARY VDS V 20 RDS(on) (Ω) ID (A) 0.0046 at VGS = 10 V 19.8a 0.006 at VGS = 4.5 V 17.3a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si4204DY 2002/95/EC Si4204DY-T1-GE3 18-Jul-08 si4204 PDF

    Si3911DV

    Abstract: us50-24
    Contextual Info: Si3911DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.145 at VGS = - 4.5 V - 2.2 - 20 0.200 at VGS = - 2.5 V - 1.8 0.300 at VGS = - 1.8 V - 1.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si3911DV 2002/95/EC Si3911DV-T1-E3 Si3911DV-T1-GE3 18-Jul-08 us50-24 PDF

    Si3905DV

    Abstract: Si3905DV-T1-E3
    Contextual Info: Si3905DV Vishay Siliconix Dual P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.125 at VGS = - 4.5 V ± 2.5 -8 0.175 at VGS = - 2.5 V ± 2.0 0.265 at VGS = - 1.8 V ± 1.7 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si3905DV 2002/95/EC Si3905DV-T1-E3 Si3905DV-T1-GE3 18-Jul-08 PDF

    Si4906DY-T1-E3

    Abstract: Si4906DY-T1-GE3 DIODE D2 SI4906DY
    Contextual Info: Si4906DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 VDS (V) N-Channel 40 Qg (Typ.) 6.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4906DY 2002/95/EC Si4906DY-T1-E3 Si4906DY-T1-GE3 18-Jul-08 DIODE D2 PDF

    AN816

    Contextual Info: Si1913EDH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.1 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1913EDH SC-70 2002/95/EC OT-363 SC-70 Si1913EDH-T1-E3 Si1913EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC AN816 PDF

    SI7288DP-T1-GE3

    Abstract: SI7288 Si7288DP
    Contextual Info: New Product Si7288DP Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.019 at VGS = 10 V 20 0.022 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		Si7288DP 2002/95/EC Si7288DP-T1-GE3 18-Jul-08 SI7288 PDF

    Si5915BDC

    Abstract: UA712
    Contextual Info: Si5915BDC Vishay Siliconix Dual P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.070 at VGS = - 4.5 V 4a 0.086 at VGS = - 2.5 V 4a 0.145 at VGS = - 1.8 V 3.6 Qg (Typ.) 5 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si5915BDC 2002/95/EC 18-Jul-08 UA712 PDF

    SI5935CDC-T1-E3

    Abstract: SI5935CDC
    Contextual Info: Si5935CDC Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V - 4g 0.156 at VGS = - 1.8 V - 3.8 VDS (V) - 20 Qg (Typ.) 6.2 nC • Halogen-free According to IEC 61249-2-21


    Original     		Si5935CDC 2002/95/EC Si5935CDC-T1-E3 18-Jul-08 PDF

    SiJ900DP

    Abstract: 2030 mosfet
    Contextual Info: New Product SiJ900DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.011 at VGS = 10 V 30 0.0135 at VGS = 4.5 V 30 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		SiJ900DP 2002/95/EC SiJ900DP-T1-GE3 18-Jul-08 2030 mosfet PDF

    Si7232DN

    Abstract: si7232
    Contextual Info: New Product Si7232DN Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0164 at VGS = 4.5 V 25f 0.020 at VGS = 2.5 V 25f 0.024 at VGS = 1.8 V 24.6 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si7232DN 2002/95/EC Si7232DN-T1-GE3 18-Jul-08 si7232 PDF

    Si4946BEY-T1-E3

    Abstract: SI4946BEY-T1-GE3 Si4946BEY
    Contextual Info: Si4946BEY Vishay Siliconix Dual N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.041 at VGS = 10 V 6.5 0.052 at VGS = 4.5 V 5.8 Qg (Typ.) 9.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4946BEY 2002/95/EC Si4946BEY-T1-E3 Si4946BEY-T1-GE3 18-Jul-08 PDF

    Contextual Info: Si5902BDC Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a Qg (Typ.) 2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si5902BDC 2002/95/EC Si5902BDC-T1-E3 Si5902BDC-T1-GE3 18-Jul-08 PDF

    SI7272DP-T1-GE3

    Abstract: si7272
    Contextual Info: New Product Si7272DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0093 at VGS = 10 V 25 0.0124 at VGS = 4.5 V 25 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • PWM Optimized


    Original     		Si7272DP Si7272DP-T1-GE3 18-Jul-08 si7272 PDF

    Si1913DH

    Contextual Info: Si1913DH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.10 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1913DH SC-70 2002/95/EC OT-363 SC-70 Si1913DH-T1-E3 Si191lectual 18-Jul-08 PDF