DIODE RY 10 A Search Results

Contextual Info: b E Lt T a 2 ci GD1Ô21D 3G1 • MITSUBISHI LASER DIODES iN*rV ML7XX12 SERIES ll«»» “ some Pat3" InGaAsP LASER DIODES ML78512 D E S C R IP T IO N M L7XX12 FEATURES series are InGaAsP laser diode arrays # 1310nm , F ab ry - perot LD array 9 10 — 12 b ea m s /c h ip

p-channel 250V 30A power mosfet

Abstract: PN channel MOSFET 10A AK2501E
Contextual Info: AK2501E 250V N-Channel + P-Channel ESD-Protected MOSFET General Features t ESD Improved Capability Low ON Resistance Fast Switching RoHS Compliant/Lead Free Small Surface Mount Package SOP8 ee ¾ ¾ ¾ ¾ ¾ Applications High Efficiency SMPS DC/DC Converter

diode ry 10 A

Contextual Info: FTU03N25E 250V N-Channel ESD-Protected MOSFET General Features BVDSS RDS ON (Max.) ID 250V 1.5Ω 3.0A t ESD Improved Capability Low ON Resistance Low Gate Charge (typical ?nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free ee ¾ ¾ ¾ ¾

ftu02p

Contextual Info: FTU02P25E 250V P-Channel ESD-Protected MOSFET General Features BVDSS RDS ON (Max.) ID -250V 3.7Ω -2.0A t ESD Improved Capability Low ON Resistance Low Gate Charge (typical ?nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free ee ¾ ¾ ¾ ¾

18P4G

Abstract: 20P2N-A M63817FP M63817KP M63817P
Contextual Info: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63817P/FP/KP are eight-circuit Single transistor arrays

18P4G

Abstract: 20P2N-A M63815FP M63815KP M63815P
Contextual Info: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63815P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63815P/FP/KP are eight-circuit Single transistor arrays

M63816FP

Abstract: 18P4G 20P2N-A M63816KP M63816P
Contextual Info: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63816P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63816P/FP/KP are eight-circuit Single transistor arrays

M63814FP

Abstract: M63814GP M63814KP M63814P
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63814P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63814P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN

GP 015 DIODE

Abstract: GP 005 DIODE GP 250 DIODE M63813FP M63813GP M63813KP M63813P
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63813P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN

ZNR 471

Abstract: 103 2KV pm3a104k detailed vfd circuit diagram for motor three phase 710 opto coupler 16T202DA1 DA1 7805 KA78L05BP 100uf 16v electrolytic capacitor TLP521
Contextual Info: VDC_AD support DCP PV3.3 DA1 KDS226 MC_CON AC2 AC1 3 C35 104,50V DCP 2 PV5 Z1 ZNR 471 R51 4.7KJ0 PV3.3 support VDC_FB R39 100KF,1W R40 100KF,1W 100KF,1W R41 R42 100KF,1W Q2 KRC101S R9 4.7KJ0 2 Q1 2N2222 R38 2.8KF0 2 PV5 U1 KA5H0280R SPS 1 support 500K,2W R15

IN60A

Abstract: PR30A IC270
Contextual Info: APT20GF120BRD 1200V 32A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

RY 227 Tf 227 10A

Abstract: APT100GF60JRD
Contextual Info: APT100GF60JRD 600V 140A E E Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

Contextual Info: APT11GF120BRD 1200V 22A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

CAR ALTERNATOR REGULATOR

Abstract: car alternator surge CAR ALTERNATOR REGULATOR 24 volt CAR ALTERNATOR REGULATOR file free BRIDGE RECTIFIER 40 AMP IN LINE WIRE LEAD 24 volt surge suppressor Alternator regulator zener alternator rectifier 1N4003 IVIR2525
Contextual Info: MR2525 MR2525R POWER RECTIFIER/POW ER SURGE SUPPRESSOR • ’ ' designed fo r applications requiring a low voltage re c tifie r w ith reverse avalanche characteristics or fo r use as a reverse power transient suppressor. Developed to suppress transients in the auto­

Contextual Info: SSE D N AMER PHILIPS/DISCRETE ^53=131 D0H025S 1 P o w e rM O S tra n s is to r B U K 4 2 6-80 0 A B U K 426-800B r - 3 1-// GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: DIODE MODULE f.r.d FRS400CA120 UL;E76102(M) F R S 4 0 0 C A 1 2 0 is a high speed isolated diode module designed for high power switching application. F R S 4 0 0 C A 1 2 0 is suitable for high frequency application requiring low loss and high speed control.

diode ry 10 A

Abstract: E135149 1N4007 definitions 1N4007 RY16046 Diode 1N4007 n type connector PCB Relay schrack RY
Contextual Info: General Purpose Relays Accessories Miniature PCB Relay RYII • Accessories for Miniature PCB Relay RYII, pinning 3.2 mm ■ Socket with PCB- or screw terminals ■ No reduction of protection class or creepage/clearance with plastic retainer ■ Easy replacement of relays

RY 227 Tf 227 10A

Abstract: pearson 411 IGBT 1200V 60A igbt 60a
Contextual Info: APT60GF120JRD 1200V 100A E E Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

RY 227 Tf 227 10A

Abstract: APT40GF120JRD IGBT 1200V 60A
Contextual Info: APT40GF120JRD 1200V 60A E E Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

IGBT 1200V 60A

Contextual Info: APT50GF120JRD 1200V 75A E E Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

1N4150

Abstract: 1N4450 1N4606 1N4607 1N460B D035 DT230C DT230H JS-2-65-11
Contextual Info: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES Ir @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.

MPY600AP

Abstract: MPY600 signal multiplier 1N914 OPA621 x2107
Contextual Info: MPY600 FPO Wide Bandwidth SIGNAL MULTIPLIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 75MHz — Current Output 30MHz — Voltage Output ● LOW NOISE ● LOW FEEDTHROUGH: –60dB 5MHz ● GROUND-REFERRED OUTPUT ● LOW OFFSET VOLTAGE ● MODULATOR/DEMODULATOR

Contextual Info: ‘> 3 7 I y-f>m Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS D30SC4M Case : ITO-3P 40V 30A •Tj 150°C •P rrs m & d D •SFWS • DC/DCZlVK-i? •mm. y -A , oa«ü m •æe. RATINGS Absolute Maximum Ratings m r m n Symbol Item lii {(fnitlX

LRD 07

Abstract: IC-7060
Contextual Info: APT50GF60B2RD APT50GF60LRD 600V 80A APT50GF60B2RD Fast IGBT & FRED T-Max B2RD The Fast IGBT™ is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior