DIODE RY 10 A Search Results

18P4G

Abstract: 20P2N-A M63815FP M63815KP M63815P
Contextual Info: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63815P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63815P/FP/KP are eight-circuit Single transistor arrays

M63816FP

Abstract: 18P4G 20P2N-A M63816KP M63816P
Contextual Info: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63816P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63816P/FP/KP are eight-circuit Single transistor arrays

GP 015 DIODE

Abstract: GP 005 DIODE GP 250 DIODE M63813FP M63813GP M63813KP M63813P
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63813P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN

ZNR 471

Abstract: 103 2KV pm3a104k detailed vfd circuit diagram for motor three phase 710 opto coupler 16T202DA1 DA1 7805 KA78L05BP 100uf 16v electrolytic capacitor TLP521
Contextual Info: VDC_AD support DCP PV3.3 DA1 KDS226 MC_CON AC2 AC1 3 C35 104,50V DCP 2 PV5 Z1 ZNR 471 R51 4.7KJ0 PV3.3 support VDC_FB R39 100KF,1W R40 100KF,1W 100KF,1W R41 R42 100KF,1W Q2 KRC101S R9 4.7KJ0 2 Q1 2N2222 R38 2.8KF0 2 PV5 U1 KA5H0280R SPS 1 support 500K,2W R15

IN60A

Abstract: PR30A IC270
Contextual Info: APT20GF120BRD 1200V 32A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

RY 227 Tf 227 10A

Abstract: APT100GF60JRD
Contextual Info: APT100GF60JRD 600V 140A E E Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

CAR ALTERNATOR REGULATOR

Abstract: car alternator surge CAR ALTERNATOR REGULATOR 24 volt CAR ALTERNATOR REGULATOR file free BRIDGE RECTIFIER 40 AMP IN LINE WIRE LEAD 24 volt surge suppressor Alternator regulator zener alternator rectifier 1N4003 IVIR2525
Contextual Info: MR2525 MR2525R POWER RECTIFIER/POW ER SURGE SUPPRESSOR • ’ ' designed fo r applications requiring a low voltage re c tifie r w ith reverse avalanche characteristics or fo r use as a reverse power transient suppressor. Developed to suppress transients in the auto­

4X4 push-button matrix keyboard

Abstract: PCD8570 3 x 4 telephone keypad PCD3312 keyboard to DTMF PCD8577 PCF8577 DTMF and emergency PCD3343 PCD3341
Contextual Info: D EVE LO PM EN T DATA This data sheet contains advance inform ation and specifications are subject to change w ith o u t notice. U pus P C D 3341 CMOS REPERTORY DIALLER TELEPHONE SET CONTROLLER G E N E R A L D E S C R IP T IO N T he PCD3341 is a lo w th re sh o ld voltage IC fa b rica te d in CMOS. I t is designed to c o n tro l d isp la y, redial

Contextual Info: SSE D N AMER PHILIPS/DISCRETE ^53=131 D0H025S 1 P o w e rM O S tra n s is to r B U K 4 2 6-80 0 A B U K 426-800B r - 3 1-// GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

RY 227 Tf 227 10A

Abstract: pearson 411 IGBT 1200V 60A igbt 60a
Contextual Info: APT60GF120JRD 1200V 100A E E Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

IGBT 1200V 60A

Contextual Info: APT50GF120JRD 1200V 75A E E Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.

MPY600AP

Abstract: MPY600 signal multiplier 1N914 OPA621 x2107
Contextual Info: MPY600 FPO Wide Bandwidth SIGNAL MULTIPLIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 75MHz — Current Output 30MHz — Voltage Output ● LOW NOISE ● LOW FEEDTHROUGH: –60dB 5MHz ● GROUND-REFERRED OUTPUT ● LOW OFFSET VOLTAGE ● MODULATOR/DEMODULATOR

Contextual Info: ‘> 3 7 I y-f>m Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS D30SC4M Case : ITO-3P 40V 30A •Tj 150°C •P rrs m & d D •SFWS • DC/DCZlVK-i? •mm. y -A , oa«ü m •æe. RATINGS Absolute Maximum Ratings m r m n Symbol Item lii {(fnitlX

LRD 07

Abstract: IC-7060
Contextual Info: APT50GF60B2RD APT50GF60LRD 600V 80A APT50GF60B2RD Fast IGBT & FRED T-Max B2RD The Fast IGBT™ is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior

TLM621

Abstract: very high current schottky diode DC surface mount power diode "Schottky Diode" power diode package CTLSH05-40M621 schottky diode 100A schottky diode
Contextual Info: RY A IN IM EL PR Central CTLSH05-40M621 Semiconductor Corp. SURFACE MOUNT LOW VF SILICON SCHOTTKY DIODE Top View DESCRIPTION: Bottom View The CENTRAL SEMICONDUCTOR CTLSH05-40M621 Low VF Schottky Diode packaged in a TLM Tiny Leadless Module™ , is a high quality

BUK657-600A

Contextual Info: ^53=131 D0E071S 1 • 5SE D N AMER PHILIPS/DISCRETE P o w e rM O S tra n s is to r F ast R ec o v e ry D io d e F E T B U K 657-600A B U K 657-600B B U K 657-600C G E N E R A L D E S C R IP T IO N Q U IC K R E F E R E N C E D A TA N-channel enhancement mode

027Q

Abstract: NDS336P
Contextual Info: M ay 1996 National & Semiconductor PRELIMINARY NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel lo g ic level enhancem ent m ode pow er fie ld effect tran sisto rs are produced using N ationals proprietary, high cell density, DMOS

marking code tc sot 363

Abstract: sot363 marking 12 diode matrix TVS 200 diode CMKTVS05C NACMKTVS05C diode ry 10 A sot 363 marking tm sot marking RY
Contextual Info: Central LIM E PR RY A CMKTVS05C N I TM Semiconductor Corp. SURFACE MOUNT 5 DIODE MATRIX COMMON ANODE SILICON TVS 200 WATTS, 12 AMPS, 5 VOLTS DESCRIPTION: The Central Semiconductor CMKTVS05C is an ULTRAmini TVS matrix of 5 diodes with a common anode configuration, in an SOT-363

zener diode 46a

Abstract: DSBT2-S-DC12V DSBT2-S-DC24V DS2E-M-DC24V DSBT2-M-2D-DC12V DSBT2-M-2D-DC24V LR26550 solid state 220 volt stabilizer circuit dsbt2-s-dc5v AC DC DIGITAL ammeter diagram
Contextual Info: DS-BT DS-BT RELAYS BABT APPROVED DS RELAYS 20.65 .813 BABT CR No.: 0104 UL File No.: E43149 CSA File No.: LR26550 10.65 .419 10.5 .413 • • • • mm inch Approved by BABT Certificate of Recognition 4,000 V breakdown voltage Reinforced insulation between coil and contacts

JESD22-A114

Abstract: JESD22-A115 JESD78 P82B96 PCA82C250 PCA9600 PCA9600D PCA9600DP
Contextual Info: PCA9600 Dual bidirectional bus buffer Rev. 04 — 11 November 2009 Product data sheet 1. General description The PCA9600 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9600 is a

Contextual Info: ESE D N AMER PHILIPS/DISCRETE • bb53131 ODEO4bO S B U K 454-400A B U K 454-400B P o w e rM O S tra n s is to r r - 3 ? - n GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

JS1-12V

Abstract: JS1-48V JS1-24V JS relay JS1-5V JS1a-24V JS1-18V LR26550 12v 10mA reed relay Matsushita polarized relay
Contextual Info: JS ULTRA-MINIATURE PC BOARD TYPE POWER RELAY 22 .866 16 .630 JS-RELAYS UL File No.: E43028 CSA File No.: LR26550 16.4 .646 • Ultra-miniature size with universal terminal footprint • High contact capacity: 10 A • UL class B coil insulation type available

DF2-DC24V

Abstract: DF2-L2-DC12V matsua DF2-DC12V DF2-L2-DC24V df2-dc5v DF2-DC12V Relay Matsushita DS2 Relay Matsushita DS2 m df2-dc9v Relay Matsua DS2 m
Contextual Info: DF HIGHLY SENSITIVE DIP MINIATURE RELAY 16 .630 DF-RELAYS UL File No.: E43149 CSA File No.: LR26550 9.9 .390 • Smaller than most of 2 Form C relays Header area: 80% of DS2 relay Cubic measure: 57% of DS2 relay • High sensitivity — 100 mW nominal power

HY1Z-24V

Abstract: HY1-12V HY1-24V HY1Z-12V LR26550 AgPd Matsua Miniature Relay s3 12v Matsua Relay Technical Information
Contextual Info: HY High Sensitivity 1 Form C Relay in Ultra Small Size 12 .472 HY-RELAYS 7.4 .291 UL File No.: E43149 CSA File No.: LR26550 10.1 .398 • High sensitivity: 150 mW/200 mW • A wide range of ambient temperature: –40°C to +70°C –40°F to +158°F • Sealed construction