DIODE RP 4040 Search Results

diode RP 4040

Abstract: diode RP 6040 DIODE REDRESSEMENT 4040 DIODE REDRESSEMENT RP 8040 X diode RP 6020 ic 4040 RC snubber circuit ku1010 RP 1240 M
Contextual Info: o THOMSON-CSF rectifier diode > 100A selector guide guide de sélection diodes de redressement ^ 100 A 143 new standard single phase all diodes metal stacks nouveaux ponts métalliques standards monophasés tout diodes IHOMSON-CSF T ype A v e ra g e o u tp u t

DIODE REDRESSEMENT 4040

Abstract: RP 8040 X diode RP 4040 la 8040 G 402 rp 402 rp KU 612 RP8040 DRA402 LA 4040
Contextual Info: rectifier diodes < 100 A diodes de redressement Types < 100 A T H O M S O N -C S F •o V r MVI I f SM 10 m s vF A (V) (A ) (V) / if max 20 A / T c a s e = 1 5 0 °C 1N 248 B, (R) 1N 249 B ,(R ) 1N 250 B, (R) 1N 1195 A, (R) 1N 1196 A, (R) 1N 1197 A, (R)

diode RP 1040

Abstract: DRA 402 DIODE 1N SERIES DIODE DRA402 DRA 402 diode RP 4040 diode 1N 3768 r RP8040R fr 608 diode DIODE REDRESSEMENT 4040
Contextual Info: rectifier diodes < 100 A diodes de redressement < 100 A Types TH O M S O N -C SF •o V r MVI If SM 10 m s vF A (V) (A ) (V ) / if m ax 20 A 1N 1N 1N 1N 1N 1N 1N RN RN RN RN / T c a s e = 1 5 0 °C 248 B, (R) 249 B ,(R ) 250 B, (R) 1195 A , (R) 1196 A, (R)

fr 608 diode

Abstract: DIODE REDRESSEMENT 1N SERIES DIODE B-408 diode ku 611 KU 612 diode 736 diode RP 4040 fr 608 KU1506
Contextual Info: rectifier diodes < 100 A diodes de redressement < 100 A Types THOMSON-CSF •o V r MVI I f SM 10 ms vF A (V) (A ) (V) / if max 20 A / T c a s e = 1 5 0 °C 1N 248 B, (R) 1N 249 B,(R) 1N 250 B, (R) 1N 1195 A, (R) 1N 1196 A, (R) 1N 1197 A, (R) 1N 1198 A, (R)

PA 0016 PIONEER

Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
Contextual Info: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete

Contextual Info: ES51998 60000counts DMM Analog front end/Insulation/Peak Features • 60000 counts dual-slope SADC (2 cnvs/s.) • Input signal full scale: 630mV (Max. 63000 count) • Built-in 600 counts fast speed (x10) FADC • Fast ADC conversion rate: 20 times/s • 100L LQFP package

LOG112

Abstract: LOG114 OPA132 OPA2380 OPA300 OPA335 OPA350 OPA380
Contextual Info: OPA380 OPA2380 SBOS291B − NOVEMBER 2003 − REVISED MAY 2004 Precision, High-Speed Transimpedance Amplifier FEATURES D D D D D D D D D D D DESCRIPTION > 1MHz TRANSIMPEDANCE BANDWIDTH EXCELLENT LONG-TERM VOS STABILITY BIAS CURRENT: 50pA max OFFSET VOLTAGE: 25µV (max)

LOG112

Abstract: LOG114 OPA132 OPA2380 OPA300 OPA335 OPA350 OPA380
Contextual Info: OPA380 OPA2380 SBOS291B − NOVEMBER 2003 − REVISED MAY 2004 Precision, High-Speed Transimpedance Amplifier FEATURES D D D D D D D D D D D DESCRIPTION > 1MHz TRANSIMPEDANCE BANDWIDTH EXCELLENT LONG-TERM VOS STABILITY BIAS CURRENT: 50pA max OFFSET VOLTAGE: 25µV (max)

Contextual Info: ES51997 60000counts DMM Analog front end/Peak Features • 60000 counts dual-slope SADC (2 cnvs/s.) • Input signal full scale: 630mV (Max. 63000 count) • Built-in 600 counts fast speed (x10) FADC • Fast ADC conversion rate: 20 times/s • 100L LQFP package

far uv photodiode

Abstract: LOG112 LOG114 OPA132 OPA2380 OPA300 OPA335 OPA350 OPA380 SBOA060
Contextual Info: OPA380 OPA2380 SBOS291C − NOVEMBER 2003 − REVISED JUNE 2004 Precision, High-Speed Transimpedance Amplifier FEATURES D D D D D D D D D D D DESCRIPTION > 1MHz TRANSIMPEDANCE BANDWIDTH EXCELLENT LONG-TERM VOS STABILITY BIAS CURRENT: 50pA max OFFSET VOLTAGE: 25µV (max)

OPA380 OPA2380

Abstract: AB-050 equivalent SBOS291A photodiode has capacitance of 5pf. bandwidth
Contextual Info: OPA380 OPA2380 SBOS291A − NOVEMBER 2003 − REVISED MARCH 2004 Precision, High-Speed Transimpedance Amplifier FEATURES D D D D D D D D D D D DESCRIPTION > 1MHz TRANSIMPEDANCE BANDWIDTH EXCELLENT LONG-TERM VOS STABILITY BIAS CURRENT: 50pA max OFFSET VOLTAGE: 25µV (max)

diode FS601

Contextual Info: ES51970 6000counts DMM Analog front end with Inrush Features • 6000 counts dual-slope SADC (2-5 cnvs/s.) • Input signal full scale: 630mV (Max. 6300 count) • Built-in 600 counts fast speed (x10) FADC • Fast ADC conversion rate: 20-50 times/s • 100L LQFP package

Contextual Info: ES51990 6000counts DMM Analog front end Features • 6000 counts dual-slope SADC (2-5 cnvs/s.) • Input signal full scale: 630mV (Max. 6300 count) • Built-in 600 counts fast speed (x10) FADC • Fast ADC conversion rate: 20-50 times/s • 100L LQFP package

Contextual Info: ES51995 6000counts DMM Analog front end with PEAK Features • 6000 counts dual-slope SADC (2-5 cnvs/s.) • Input signal full scale: 630mV (Max. 6300 count) • Built-in 600 counts fast speed (x10) FADC • Fast ADC conversion rate: 20-50 times/s • 100L LQFP package

Contextual Info: ES51996 6000counts DMM Analog front end/Insulation Features • 6000 counts dual-slope SADC (2-5 cnvs/s.) • Input signal full scale: 630mV (Max. 6300 count) • Built-in 600 counts fast speed (x10) FADC • Fast ADC conversion rate: 20-50 times/s • 100L LQFP package

Contextual Info: TCM1030, TCM1050 DUAL TRANSIENT-VOLTAGE SUPPRESSORS S C TS 040B - J U N E 1989 - R EVISED JU NE 1997 • • Meet or Exceed Bell Standard LSSGR Requirements D OR P PACKAGE TOP VIEW Externally-Controlled Negative Firing Voltage . . . -9 0 V Max • Accurately Controlled, Wide Negative

SCR 1989

Contextual Info: TCM1030, TCM1050 DUAL TRANSIENT-VOLTAGE SUPPRESSORS SCTS040B – JUNE 1989 – REVISED JUNE 1997 D D D D D D Meet or Exceed Bell Standard LSSGR Requirements Externally-Controlled Negative Firing Voltage . . . – 90 V Max Accurately Controlled, Wide Negative

134 kHz RFID antenna design

Contextual Info: LMV221 www.ti.com SNWS018C – DECEMBER 2006 – REVISED MARCH 2013 LMV221 50 MHz to 3.5 GHz 40 dB Logarithmic Power Detector for CDMA and WCDMA Check for Samples: LMV221 FEATURES DESCRIPTION • • • • • • • The LMV221 is a 40 dB RF power detector intended

Contextual Info: LMV221 www.ti.com SNWS018C – DECEMBER 2006 – REVISED MARCH 2013 LMV221 50 MHz to 3.5 GHz 40 dB Logarithmic Power Detector for CDMA and WCDMA Check for Samples: LMV221 FEATURES DESCRIPTION • • • • • • • The LMV221 is a 40 dB RF power detector intended

Contextual Info: LMV221 www.ti.com SNWS018B – DECEMBER 2006 – REVISED MARCH 2008 LMV221 50 MHz to 3.5 GHz 40 dB Logarithmic Power Detector for CDMA and WCDMA Check for Samples: LMV221 FEATURES APPLICATIONS • • • • • • • • • • • 1 2 40 dB Linear in dB Power Detection Range

74VHC4040

Contextual Info: S E M I C O N D U C T O R -n 74VHC4040 12-Stage Binary Counter General Description Features The VH C4040 is an advanced high-speed CM OS device fabricated w ith silicon g a le CM OS technology. It achieves the high-speed operation sim ilar to equivalent B ipolar Schottky T T L w hile m aintaining the CM OS low pow er dissipation.

74LS82

Abstract: 74245 BIDIRECTIONAL BUFFER IC ic 4583 schmitt trigger core bit excess 3 adder using IC 7483 advantages for ic 7473 4 BIT COUNTER 74669 la 4508 ic schematic diagram XF107 74295 random number generator by using ic 4011 and 4017
Contextual Info: General Features The SCxD4 series of high performance CMOS gate arrays offers the user the ability to realise customised VLSI inte­ grated circuits featuring the speed performance previously obtainable only with bipolar technologies whilst retaining all the advantages of CMOS technology; low power consum p­

Contextual Info: LMV221 www.ti.com SNWS018C – DECEMBER 2006 – REVISED MARCH 2013 LMV221 50 MHz to 3.5 GHz 40 dB Logarithmic Power Detector for CDMA and WCDMA Check for Samples: LMV221 FEATURES DESCRIPTION • • • • • • • The LMV221 is a 40 dB RF power detector intended

diode RP 4040

Abstract: APT4040B APT4030 j0501
Contextual Info: ADVANCED POW ER Te c h n o l o g y q O D r APT4030BN APT3530BN APT4040BN APT3540BN Ô S ¡5 WER MOS m 400V 350V 400V 350V 18.5A 18.5A 16.0A 16.0A 0.300 0.30Q 0.40Q 0.40Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T c = 25°C unless otherwise specified.