DIODE RM25 Search Results

Contextual Info: RM25TN-2H Description: M itsubishi Three-P hase Diode Bridge M odules are designed fo r use in applications requiring rectifi­ cation of thre e-p ha se AC lines into DC voltage. Each m odule consists of six diodes and the interconnect required to form a com plete threephase bridge circuit. Each diode is

three phase on line ups circuit diagrams

Abstract: UPS circuit diagram 3 phase UPS CIRCUIT DIAGRAM UPS RM25TN-2H
Contextual Info: RM25TN-2H Tentative Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Three-Phase Diode Bridge Module 15 Amperes/1600 Volts A S D G H E R B Q R "Y" F P + ~ ~ ~ TYP K J Z - ∅"X" N L T C W M U V Description: Powerex Three-Phase Diode

ED 05 Diode

Abstract: ED 03 Diode
Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM25HG-24S HIGH SPEED SWITCHING USE NON-INSULATED TYPE ed RM25HG-24S DC current . 25A Repetitive peak reverse voltage . 1200V • trr Reverse recovery time . 0.3µs

Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM25HG-24S HIGH SPEED SWITCHING USE NON-INSULATED TYPE ue d RM25HG-24S DC current . 25A Repetitive peak reverse voltage . 1200V • trr Reverse recovery time . 0.3µs

RM25HG-24S

Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM25HG-24S HIGH SPEED SWITCHING USE NON-INSULATED TYPE RM25HG-24S • IDC • VRRM DC current . 25A Repetitive peak reverse voltage . 1200V • trr Reverse recovery time . 0.3µs

rm25hg

Abstract: RM25HG-24S
Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM25HG-24S HIGH SPEED SWITCHING USE NON-INSULATED TYPE RM25HG-24S • IDC • VRRM DC current . 25A Repetitive peak reverse voltage . 1200V • trr Reverse recovery time . 0.3µs

Contextual Info: < HIGH VOLTAGE DIODE MODULES > RM250DG-130F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules RM250DG-130F       IF•··································································· 250A

Contextual Info: < HIGH VOLTAGE DIODE MODULES > RM250DG-130F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules RM250DG-130F       IF•··································································· 250A

Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM25HG-24S HIGH SPEED SWITCHING USE NON-INSULATED TYPE Description: Mitsubishi Super Fast Recovery Diodes are designed for use in applications requiring fast switching. Features: □ Non-lsolated Package □ Planar Chips

Contextual Info: RM25HG-24S Powerex, Inc., 200 Mills Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Super Fast Recovery Single Diode Moduie 25 Amperes/1200 Volts Description: Powerex Super Fast Recovery Diodes are designed for use in applications requiring fast

RM25HG-24S

Abstract: RM25HG24S
Contextual Info: RM25HG-24S Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Super Fast Recovery Single Diode 25 Amperes/1200 Volts B Description: Powerex Super Fast Recovery Diodes are designed for use in applications requiring fast switching.

Contextual Info: RM25HG-24S Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Super Fast Recovery Single Diode 25 Amperes/1200 Volts B Description: Powerex Super Fast Recovery Diodes are designed for use in applications requiring fast switching.

Contextual Info: wmmBC RM25HG-24S Tentative Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Super FdSt ReCOVety Single Diode Module 25 Amperes/1200 Volts Description: Powerex Super Fast Recovery Diodes are designed for use in applications requiring fast

Contextual Info: MITSUBISHI DIODE MODULES RM250DZ/CZ/UZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE RM250DZ/CZ/UZ-M,-H,-24,-2H Average forward current . 250A Repetitive peak reverse voltage . 400/800/1200/1600V • DOUBLE ARMS • Insulated Type

diode zener RM25

Abstract: RM25 zener diode RM25 diode RM25 10MSA
Contextual Info: RM25 AVALANCHE DIODE D2 VRM : 40 Volts IZSM : 3.0 Amp. 10 ms FEATURES : * * * * 1.00 (25.4) MIN. 0.161 (4.1) 0.154 (3.9) Excellent clamping capability Low zener impedance Fast response time : typically less Pb / RoHS Free 0.284 (7.2) 0.268 (6.8) 1.00 (25.4)

E80276

Contextual Info: MITSUBISHI DIODE MODULES RM250DZ/CZ/UZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE RM250DZ/CZ/UZ-M,-H,-24,-2H • IF AV • VRRM Average forward current . 250A Repetitive peak reverse voltage . 400/800/1200/1600V • DOUBLE ARMS

Contextual Info: MITSUBISHI DIODE MODULES RM250DZ/CZ/UZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE RM250DZ/CZ/UZ-M,-H,-24,-2H Average forward current 250A Repetitive peak reverse voltage . 400/800/1200/1600V • DOUBLEARMS • Insulated Type • UL Recognized

Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM25HG-24S HIGH SPEED SWITCHING USE NON-INSULATED TYPE No t fo R r N ec ew om De me sig nd n RM25HG-24S • IDC • VRRM DC current . 25A Repetitive peak reverse voltage . 1200V

Contextual Info: M ITSUBISHI DIODE M O D U LES RM250DZ/CZ/UZ-M,-H,-24,-2H ! Î HIGH POWER GENERAL USE _ INSULATED TYPE RM250DZ/CZ/UZ-M,-H,-24,-2H Average forward current 250A Repetitive peak reverse voltage 400/800/1200/1600V • lF AV

Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM25HG-24S HIGH SPEED SWITCHING USE NON-INSULATED TYPE Description: M itsubishi S uper Fast R ecovery Diodes are designed fo r use in applications requiring fa st sw itching. Features: □ N on-lsolated Package □ Planar C hips

RM25HG-24S

Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM25HG-24S HIGH SPEED SWITCHING USE NON-INSULATED TYPE B F D A G - DIA. K L 2 1 H C J Description: Mitsubishi Super Fast Recovery Diodes are designed for use in applications requiring fast switching. Features: ٗ Non-Isolated Package

RM25HG-24S

Contextual Info: RM25HG-24S Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Super Fast Recovery Single Diode Module 25 Amperes/1200 Volts B F D A G - DIA. K L 2 1 H C J Description: Powerex Super Fast Recovery Diodes are designed for use in

RM25HG-24S

Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM25HG-24S HIGH SPEED SWITCHING USE NON-INSULATED TYPE B F D A G - DIA. K L 2 1 H C J Description: Mitsubishi Super Fast Recovery Diodes are designed for use in applications requiring fast switching. Features: 3 ٗ Non-Isolated Package

ME501210

Abstract: Thyristor Modules ME500810 RM30TPM-H IGBT BOOK intellimod 3
Contextual Info: 3-PHASE DIODE BRIDGE MODULES Outline Drawings Amperes Number 1600 7 96 55 800 12 96 55 Tyoe Volts RM10TN-2H* RM10TN-H* Page RM25TN-2H* 1600 15 96 55 ME700802* 800 20 97 56 ME701202* 1200 20 97 56 ME701602* 1600 20 97 56 55 RM20TN-H* 800 24 96 ME700803*