DIODE RM Search Results

1N5411

Abstract: 1N5760 DIODE GE 103717 1N5758 1N5761 germanium motorola 2n491 1N5759 Hitron
Contextual Info: PART NUMBER INDEX Part Number Manufacturer 1N3299 AmerMicroSC Mcrwv Diode 1N3300 AmerMicroSC Mcrwv Diode 1N3300A AmerMicroSC 1N3301 Mcrwv Diode 1N3301 A 1N3302 Mcrwv Diode 1N3302A 1N3303 CrimsonSemi 1N3303A Mcrwv Diode 1N3304 AmerMicroSC Mcrwv Diode 1N3304A

DIODE A16

Abstract: 97a6 transistor A16 a15 diode
Contextual Info: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS

TYN616

Abstract: 100-6 scr Transistor 2p4m SCR 2P4M
Contextual Info: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS

97a6

Abstract: transistor A16
Contextual Info: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS

transistors C106

Abstract: TO202 package transistor 2p4m
Contextual Info: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS

thyristor code

Abstract: 1KHZ thyristor thyristor h 250 tb 15 R216CH12FJO Anti-Parallel Thyristor
Contextual Info: lllfESTCODE SEMICONDUCTORS * Isolated Base Power Modules Available as DOUBLE THYRISTOR, THYRISTOR/DIODE, DIODE/THYRISTOR, DOUBLE DIODE. Features compression mounted ceramic units ensuring hermeticity. Isolation 2.5KV RMS using non-hazaidous materials. Integral water cooled unit available.

Contextual Info: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.

Westcode thyristor

Abstract: WESTCODE TB R216CH12FJO 1KHZ thyristor thyristor T 95 F 700 SM12CXC190 back to back thyristor module thyristor 910 R216CH12 westcode diodes S
Contextual Info: WESTCODE SEMICONDUCTORS« »«-»» Isolated Base Power Modules Available as DOUBLE THYRISTOR, THYRISTOR/DIODE, DIODE/THYRISTOR, DOUBLE DIODE. Features compression mounted ceramic units ensuring hermeticity. Isolation 2.5KV RMS using non-hazardous materials. Integral water cooled unit available.

BAS32

Abstract: diode bas32 IEC134 BAS32 sod80
Contextual Info: 41E D 711002b 00533bt. eSPHIN PHILIPS INTERNATIONAL BAS32 T-03-09 HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32 is a planar epitaxial high-speed diode designed fo r fast logic applications. This SM diode is a leadless diode in a h e rm e tica lly sealed SOD- 8 O envelope w ith tin -p la te d m etal discsat

TYN616

Abstract: TO-92 C106 c106 1006
Contextual Info: Products Search Home About Us Product News Application Message to Us Contact Us Corp.News | Industry News Products Category You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode

RM600DY-66S

Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULE RM600DY-66S HIGH POWER SWITCHING USE INSULATED TYPE HVDi High Voltage Diode Module RM600DY-66S ● IDC . 600A ● VRRM . 3300V

RM400DY-66S

Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULE RM400DY-66S HIGH POWER SWITCHING USE INSULATED TYPE HVDi High Voltage Diode Module RM400DY-66S ● IDC . 400A ● VRRM . 3300V

diode fr 210

Abstract: 1506 diode diode s 360
Contextual Info: SIEMENS Silicon Switching Diode Array BGX 50 A • Bridge configuration • High-speed switch diode chip Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage Vr 50 V Peak reverse voltage V rm 70 Forward current If 140 mA Total power dissipation, Ts = 74 ‘ C

Thyristor ABB ys 150

Contextual Info: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

Thyristor MCD

Abstract: mdc 90-12 ABB thyristor modules 90-08io8 DIODE REDRESSEMENT mcd 132
Contextual Info: A S E A BROüJN/ABB ~fl3 FI Dcmfl30ó QQoans E F SEMICON • Netz-Thyristor-Diode-Module _ _ 1 T— 25-23 S 3 f£ v ~ : B ES Phase control Thyristor-Diode-Modules Daten pro Diode Oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor

Contextual Info: 6R1MBi75P-160 Diode Module Diode Module with Brake Diode:1600V / 75A, IGBT:1400A/50A Features • Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier

ad130

Abstract: D1103 d1105 MMAD1109 AD1107
Contextual Info: MOTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA M onolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching

5516 DIODE

Contextual Info: A S E A Û3 BRO üJN/ABB s e m i c o n Netz-Thyristor-M odule D I □□4Û3DÛ 7 T - 25-23 Phase control Thyristor-Modules Daten pro Diode oderThyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor V r rm V drm

DD200GB40

Abstract: DD200GB80
Contextual Info: DIODE MODULE DD200GB UL;E76102 （M） Power Diode Module DD200GB series are designed for various rectifier circuits. DD200GB has two diode two diode chips connecected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating

53HK7

Contextual Info: — PRODUCT INFORMATION — Page 1 Compactron Diode-Pentode TUBES The 53HK7 is a compactron containing a high-perveance diode and a beam-power pentode. The diode is intended for service as the damping diode and the pentode as the horizontaldeflection amplifier in television receivers.

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

DIODE V10-20

Abstract: T1548 general electric EIA 6-8
Contextual Info: 6AF3 6AF3 ET-T1548 Page 1 7-J9 DIODE FOR TV DAMPING-DIODE APPLICATIONS TUBES DESCRIPTION AND RATING The 6AF3 is a miniature, heater-cathode type diode for service as the damp­ ing diode in the horizontal-deflection circuit of television receivers. It will

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure