DIODE RK 30 6 Search Results

RK 891 031-aa

Abstract: interposing relay RK 211 074 RK 211 064 RXMS1 ABB make RED 670 rk 223 069 ec RXME 1 abb rk 216 rk 211 072
Contextual Info: Auxiliary, signalling and tripping relays RXMA1, RXMA 2, RXMM 1 RXMS 1, RXSF 1, RXME 1, RXME 18, RXMH 2 & RXMT 1 RXMM 1 SE 90 06 16 RXSF 1 (SE 82 02 62) (SE 82 02 62) (SE 94 07 44) (SE 94 07 41) Page 1 Issued July 2007 Revision: B Data subject to change without notice

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

MPE-220A

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

R04003C

Abstract: S2274
Contextual Info: SKYWORKS' D ATASH EET S K Y 12 2 0 7-3 0 6 LF: 0 .9 -4.0 GH z High Power Silicon PIN Diode SPOT Switch A p p lic a tio n s ANT • Transmit/receive switching and failsafe switching in TD-SCDMA, WiMAX, and LTE base stations • Transmit/receive switching in land mobile radios and military

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

SFPJ-73

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

ASEA thyristor

Abstract: RK 924 RK 211 175 asea designation
Contextual Info: ASEA Catalogue RK 31-10 E Edition 2 November 1974 Time-lag relay type RXKT 2 □ □ □ is available with tim e scales 0.2—2 s, 1—10 s, 6 -6 0 s and 0 .5 -5 min Is suitable fo r d.c. supply Requires no auxiliary voltage □ Is used in, for example, relay protections and automatic equipment for

ratub

Abstract: ratua AN 7314 220 volt ac relays switch circuit diagram abb generator excitation system generator RXME ABB RK629 RTXP 18 ASEA COMBITEST
Contextual Info: Info-Ng. j l B ^k | | | | INFORMATION M B h S | FromyTtats ASEfl GROWNflOVERI RFR, Sept 19S1 Edition I RK 629-300 E Flfcfl, 7454 P a js 1 ABB Relays Over-excitation relay, type RATUB The RATUB over-excitation relay is used for protecting power transform ers against excessive excitation by monitoring the

6bv8

Abstract: diode 12-55 c capacitor RGF general electric RK 1900
Contextual Info: 6BV8 ET-T981 Page 1 6BV8 TUBES 12-55 DUPLEX-DIODE TRIODE DESCRIPTION AND RATING T h e 6 B V 8 is a m iniature duplex-diode m ed ium -m u triode in w hich separate cathode an d plate connections are provided for each diode section. T h e tube is intended p rim a rily for service as a com bined syn ch ron ou s detector and

FS15R06VE3_B2

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS15R06VE3_B2 IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 初步数据/PreliminaryData 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES  600

12AT6

Abstract: 6at6 6AT6-12AT6 12at6 diagram 6at6 tube T1447 tube 12AT6 12at6 tube ga 39 diode general electric
Contextual Info: 6AT6 12AT6 ET-T1447 Page 1 6AT6-12AT6 2-57 DUPLEX-DIODE TRIODE TUBES DESCRIPTION AND RATING The 6AT6 is a miniature, duplex-diode, high-mu triode designed for use as a combined detector, amplifier, and automatic-volume-control tube. Except for heater ratings, the 12AT6 is identical to the 6AT6.

12AV6

Abstract: 6AV6 6AV6 tube 12av6 tube t814 tube 6AV6 6s3 tube ET-T924 t924 12av6, tube
Contextual Info: 6AV6 3AV6 12AV6 6AV6 - 3AV6 - 1 2AV6 ¿faß}* ET-T924 Page 1 DUPLEX-DIODE TRIODE 3-55 TUBES DESCRIPTION A N D RATING The 6AV6 is a miniature duplex-diode, high-mu triode intended primarily for use as a combined detector, amplifier, and automatic-volume-control tube

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS15R06VE3_B2 初步数据 PreliminaryData IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES  600  V

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS15R06VE3 IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 初步数据/PreliminaryData 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES  600  V

diode RU 3AM

Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS10R06VE3_B2 IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 初步数据/PreliminaryData 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES  600

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS6R06VE3_B2 初步数据 PreliminaryData IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES  600  V

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS10R06VE3_B2 初步数据 PreliminaryData IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES  600  V

6CN7

Abstract: 6T8 tube reactance tube rs tube
Contextual Info: ET-T908A 6 C N 7 -8 C N 7 Page 1 11-56 DUPLEX-DIODE TRIODE TUBES DESCRIPTION A N D RATING The 6C N 7 is a duplex-diode high-mu triode in which separate cathodes are provided for the diode and triode sections. The triode section of the 6C N 7 is electrically identical to the triode section of the 6T8. The tube is primarily

diagram 3 phase heater control

Abstract: diagram 3 phase heater 6cn7 reactance tube rs tube transistor+6cn
Contextual Info: 6 C N7 TUNOSOL D U P L E X - D IO D E T R IO D E M IN I A T U R E TYPE COATED UN I P O T E N T I A L CATHODE SE RI E S H EA TE R 6 . 3 + 0 . 6 VOLTS 3 0 0 MA. PARALLEL. 3 . 1 5 VOLTS 6 0 0 + 4 0 MA. AC OR DC ANY MOUNTING P O S I T I O N CONTROL OF A P P L I E S ONLY