DIODE RING QUAD Search Results

SCHOTTKY DIODE SOT-143

Abstract: 040P
Contextual Info: Silicon Schottky Diode Ring Quad Chips MA4E2062 Series MA4E2062 Series Preliminary Specifications Silicon Schottky Diode Ring Quards Features • • • • • • • Package Outlines Small Size Designed for High Volume, Low Cost Closely Matched Junctions

DIODE RING QUAD

Contextual Info: 5082-2292 SILICON-MATCHED DIODE RING QUAD DESCRIPTION: The 5082-2292 is a Silicon Matched Ring Quad Mixer Diode Designed for Operations From 4.0 GHz to 8.0 GHz. PACKAGE STYLE C4 MAXIMUM RATINGS I 40 mA V 3.0 V PDISS 75 mW @ TC = 25 OC PER JUNCTION TJ -65 OC to +125 OC

MA4CS104CR

Contextual Info: Ajfa High Volume, High Sigma C rossover Ring Quad * Surface M ount SOT-143 Silicon Schottky Diode Crossover Ring Quad MA4CS104CR Features • Low capacitance for high frequency performance • Low barrier junctions for sensitive double balanced mixers, IQ modulators and

BY 178 DIODE

Abstract: HSCH-9301 handling of beam lead diodes F 9301 HP4271
Contextual Info: Agilent HSCH-9301 GaAs Beam Lead Schottky Ring Quad Diode Data Sheet Features • Gold tri-metal system for improved reliability • Low capacitance • Low series resistance • High cutoff frequency • Polyimide passivation Description The HSCH-9301 ring quad uses

Contextual Info: F81QD-B40 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleChip Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>4.0V; 300mV Barrier

Contextual Info: F84QD-B40 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleChip Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 625mV Barrier

Contextual Info: F82QD-B40 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleChip Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 400mV Barrier

Contextual Info: F83QD-B40 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleChip Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 500mV Barrier

HSCH-5800

Contextual Info: Whpì HEWLETT mL'tiM PACKARD Beam Lead Schottky Diode Ring Quads for Double Balanced Mixers Operating to 26 GHz Technical Data HSCH-5800 Series Features • M onolithic Ring Quads Closely Matched Electrical Parameters • Low Capacitance 0.10 pF Max. at 0 V

Contextual Info: F82QA-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 400mV Barrier

Contextual Info: F82QD-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 400mV Barrier

Contextual Info: F84QC-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 625mV Barrier

Contextual Info: F83QA-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 500mV Barrier

F81QA-W56

Contextual Info: F81QA-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>4.0V; 300mV Barrier

5516 DIODE

Abstract: 5516 schottky diode DME3927 DME3930 DMF3926 DMF3929 DMJ3928 DMJ3931 5512 IF 5514
Contextual Info: Silicon Beamless Schottky Diodes Features For Microwave MIC Assembly & Automated High Volume Manufacturing Lines Mechanically Rugged Design Three Barrier Heights for Optimized Mixer Performance Wide Product Range: Series Pair, Ring, Bridge, and 8 Diode Ring

Contextual Info: SIEMENS Silicon Crossover Ring Quad Schottky Diode BAT 114-099R Features • High barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code

Contextual Info: F81QD-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>4.0V; 300mV Barrier

Contextual Info: F81QC-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>4.0V; 300mV Barrier

Contextual Info: F84QB-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 625mV Barrier

SCHOTTKY DIODE SOT-143

Abstract: BAT 58
Contextual Info: Silicon Crossover Ring Quad Schottky Diode BAT 114-099R Features • High barrier diode for double balanced mixers, phase detectors and modulators ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped

Contextual Info: F83QB-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 500mV Barrier

Contextual Info: F84QA-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 625mV Barrier

Contextual Info: F82QC-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 400mV Barrier

Contextual Info: F84QD-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 625mV Barrier