DIODE RING MIXER Search Results
DIODE RING MIXER Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
CUZ12V |
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Zener Diode, 12 V, USC | Datasheet | ||
MUZ5V6 |
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Zener Diode, 5.6 V, USM | Datasheet |
DIODE RING MIXER Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SCHOTTKY DIODE SOT-143
Abstract: 040P
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Original |
MA4E2062 OT-143 SCHOTTKY DIODE SOT-143 040P | |
5516 DIODE
Abstract: 5516 schottky diode DME3927 DME3930 DMF3926 DMF3929 DMJ3928 DMJ3931 5512 IF 5514
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DIODE RING QUADContextual Info: 5082-2292 SILICON-MATCHED DIODE RING QUAD DESCRIPTION: The 5082-2292 is a Silicon Matched Ring Quad Mixer Diode Designed for Operations From 4.0 GHz to 8.0 GHz. PACKAGE STYLE C4 MAXIMUM RATINGS I 40 mA V 3.0 V PDISS 75 mW @ TC = 25 OC PER JUNCTION TJ -65 OC to +125 OC |
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MA4CS104CRContextual Info: Ajfa High Volume, High Sigma C rossover Ring Quad * Surface M ount SOT-143 Silicon Schottky Diode Crossover Ring Quad MA4CS104CR Features • Low capacitance for high frequency performance • Low barrier junctions for sensitive double balanced mixers, IQ modulators and |
OCR Scan |
MA4CS104CR OT-143 A4CS104CR MA4CS104CR | |
Contextual Info: F81QD-B40 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleChip Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>4.0V; 300mV Barrier |
Original |
F81QD-B40 300mV | |
Contextual Info: F84QD-B40 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleChip Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 625mV Barrier |
Original |
F84QD-B40 625mV | |
Contextual Info: F82QD-B40 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleChip Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 400mV Barrier |
Original |
F82QD-B40 400mV | |
Contextual Info: F83QD-B40 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleChip Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 500mV Barrier |
Original |
F83QD-B40 500mV | |
HSCH-5800Contextual Info: Whpì HEWLETT mL'tiM PACKARD Beam Lead Schottky Diode Ring Quads for Double Balanced Mixers Operating to 26 GHz Technical Data HSCH-5800 Series Features • M onolithic Ring Quads Closely Matched Electrical Parameters • Low Capacitance 0.10 pF Max. at 0 V |
OCR Scan |
HSCH-5800 HSCH-583X HSCH-581X | |
Contextual Info: F82QA-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 400mV Barrier |
Original |
F82QA-W56 400mV | |
Contextual Info: F82QD-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 400mV Barrier |
Original |
F82QD-W56 400mV | |
Contextual Info: F84QC-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 625mV Barrier |
Original |
F84QC-W56 625mV | |
Contextual Info: F83QA-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 500mV Barrier |
Original |
F83QA-W56 500mV | |
F81QA-W56Contextual Info: F81QA-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>4.0V; 300mV Barrier |
Original |
F81QA-W56 300mV | |
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Contextual Info: SIEMENS Silicon Crossover Ring Quad Schottky Diode BAT 114-099R Features • High barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code |
OCR Scan |
114-099R Q62702-A1006 OT-143 EHA07C E35bG5 D15G3Ã DlED30* | |
Contextual Info: F81QD-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>4.0V; 300mV Barrier |
Original |
F81QD-W56 300mV | |
Contextual Info: F81QC-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>4.0V; 300mV Barrier |
Original |
F81QC-W56 300mV | |
Contextual Info: F84QB-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 625mV Barrier |
Original |
F84QB-W56 625mV | |
SCHOTTKY DIODE SOT-143
Abstract: BAT 58
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Original |
114-099R Q62702-A1006 OT-143 SCHOTTKY DIODE SOT-143 BAT 58 | |
Contextual Info: F83QB-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 500mV Barrier |
Original |
F83QB-W56 500mV | |
Contextual Info: F84QA-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 625mV Barrier |
Original |
F84QA-W56 625mV | |
Contextual Info: F82QC-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 400mV Barrier |
Original |
F82QC-W56 400mV | |
Contextual Info: F84QD-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 625mV Barrier |
Original |
F84QD-W56 625mV | |
Contextual Info: F83QD-W56 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleMicro-X Mounting StyleS DescriptionBeam Lead Ring Quad N-Type Mixer; Vbr>5.0V; 500mV Barrier |
Original |
F83QD-W56 500mV |