DIODE RG Search Results

Contextual Info: 6R1MBi75P-160 Diode Module Diode Module with Brake Diode:1600V / 75A, IGBT:1400A/50A Features • Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier

ad130

Abstract: D1103 d1105 MMAD1109 AD1107
Contextual Info: MOTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA M onolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching

EBF83

Abstract: EN50011 Scans-0017839 CD2A battery operated cdi 2235S
Contextual Info: PH ILIPS EBF83 DOUBLE-DIODE PENTODE for use as I.F. amplifier, detector and A.G.C. diode in carradio sets. The tube can be directly operated from a 6 V or 12 V storage battery DOUBLE-DIODE PENTHODE pour l'utilisation comme amplificateur MF, comme détecteur et corne diode de C.A.V. dans récepteurs

diode RGP 30M

Contextual Info: RGP 30K, RGP 30M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter *0 Axial lead diode Fast silicon rectifier diodes RGP 30K, RGP 30M Forward Current: 3 A

041 DIODE

Abstract: diode 2j
Contextual Info: RGL 1A.RGL 1M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 5  Surface mount diode Fast silicon rectifier diodes RGL 1A.RGL 1M Forward Current: 1 A

diode 2j

Abstract: 041 DIODE
Contextual Info: RGL 34A.RGL 34M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 5  Surface mount diode Fast silicon rectifier diodes RGL 34A.RGL 34M Forward Current: 0,5 A

H15R1202

Abstract: IGBT H15R1202 H15R120 IHW15N120R2 PG-TO-247-3-21 600v 20a diode H15R1202 equivalent
Contextual Info: IHW15N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :

Contextual Info: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev B1, Page 1/45 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode and LED modules ♦ CW N-/M-type laser diode drivers ♦ Embedded laser diode

h20r120

Abstract: h20r120 igbt ALL h20r120 IHW20N120R igbt h20r120 m 1305 PG-TO-247-3-21 JESD-022 H20R12 H20R
Contextual Info: IHW20N120R Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :

H20R1202

Abstract: h20r1202 igbt igbt h20r1202 H20R120 equivalent of h20r1202 1200v 30A to247 25A 1200V 600v 30a IGBT equivalent H20R1202 igbt 600V
Contextual Info: IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications

H20R1202

Abstract: igbt h20r1202 h20r1202 igbt equivalent H20R1202 H20R120 equivalent of h20r1202 h20r H20R12 IHW20N120R2 600v 30a IGBT
Contextual Info: IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :

h30r1202

Abstract: h30r120 igbt h30r1202 H30R1 1200v 30A to247 H30R1202 equivalent 600v 30a IGBT IHW30N120R2 h30r IGBT 1200V 60A
Contextual Info: IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :

MRD14B

Abstract: 2N5777 MRA363 MRA363B rectifier diode assembly rectifier diode common anode
Contextual Info: MRA363, MRA363B silicon M ulti-Cell n , power rectifier diode circuits designed for high-current rectifier service. The MRA363 is an air-cooled, integral rectifier assem bly engineered for optimum diode/heatsink utilization. MAXIMUM DIODE RATINGS PER CIRCUIT LEG

h20r120

Abstract: h20r120 igbt igbt h20r120 H20R ALL h20r120 1200v diode to247 igbt 500V 15A IHW15N120R PG-TO-247-3-21 rg54
Contextual Info: Soft Switching Series IHW15N120R q Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :

mosfet 300V 10A

Abstract: M01N60 mosfet 10V 10A n channel mosfet mosfet 10a 600v 2a 400v mosfet to-251 FAST RECOVERY DIODE 10A 400V
Contextual Info: N Channel MOSFET M01N60 1.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits

100v 20a fast recovery power diode

Abstract: Power MOSFET 50V 20A MOSFET 40A 100V 100v 20a mosfet N_CHANNEL MOSFET 100V MOSFET
Contextual Info: LTP40N10 N-Channel 100V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits •Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application BVDSS=100V , • DC to DC converter

Power MOSFET 50V 20A

Abstract: 100V, 200 A MOSFET N_CHANNEL MOSFET 100V MOSFET MOSFET 40A 100V
Contextual Info: LTD35N10 N-Channel 100V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits •Source to Drain diode recovery time comparable to a discrete fast recovery diode. • Pb-free lead planting ; RoHS compliant

mosfet 600V 20A

Abstract: M02N60 Mosfet 600V, 20A TO 220 Package High current N CHANNEL MOSFET MOSFET 400V TO-220 n channel mosfet 600V 2A MOSFET N-channel N channel mosfet TO220
Contextual Info: N Channel MOSFET M02N60 2.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits

LTP120N06

Contextual Info: LTP120N06 N-Channel 60V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits •Source to Drain diode recovery time comparable to a discrete fast recovery diode. • Pb-free lead planting ; RoHS compliant

Contextual Info: LTP95N07 N-Channel 75V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application • DC to DC converter BVDSS=75V ,

C-150

Abstract: IRFI840G IRGIB6B60KD PD944
Contextual Info: PD-94427C IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

transistor c 2335

Abstract: C-150 IRFI840G IRGIB15B60KD1
Contextual Info: PD- 94599 IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 94385A IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD- 94914 IRGIB15B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.