DIODE REVERSE VOLTAGE PROTECTION Search Results

BAY135

Abstract: BAY13
Contextual Info: BAY135 Vishay Telefunken Silicon Planar Diode Features D Very low reverse current Applications 94 9367 Protection circuits, delay circuits Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage, non repetitive Repetitive peak reverse voltage Reverse voltage

Contextual Info: BAY135 V IS HAY Vishay Telefunken Silicon Planar Diode Features • Very low reverse current % Applications Protection circuits, delay circuits Absolute Maximum Ratings Tj = 25° C Parameter Peak reverse voltage, non repetitive Repetitive peak reverse voltage

DIODE S4 Schottky SOD-323

Abstract: DIODE marking S4 sod diode SOD-323 S4 DIODE schottky SD103CWS SD103AWS SD103BWS diode s6 28 diode x sod 323
Contextual Info: SOD-323 Plastic-Encapsulate Diode SD103AWS-SD103CWS SCHOTTKY DIODE SOD-323 Features • · 1.00 Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance 1.70 1.30 Marking: SD103AWS:S4

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode SD103AWS-SD103CWS SCHOTTKY DIODE SOD-323 Features • · 1.00 Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode SD103AW-SD103CW SCHOTTKY DIODE SOD-123 Features 1.05 • · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD SD103AWS DIODE SCHOTTKY BARRIER SWITCHING DIODE „ FEATURES * Low Forward Voltage Drop * Fast Switching * Negligible Reverse Recovery Time * Low Reverse Capacitance * Designed for Surface Mount Application * PN Junction Guard Ring for Transient and ESD Protection

Contextual Info: RECTRON SD103CW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 20 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA

Contextual Info: RECTRON SD103AW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 40 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA

SD103CW

Contextual Info: RECTRON SD103CW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 20 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA

Contextual Info: LTC4359 Ideal Diode Controller with Reverse Input Protection FEATURES n n n n n n n DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode Wide Operating Voltage Range: 4V to 80V Reverse Input Protection to – 40V Low 9µA Shutdown current

RB520S-40

Contextual Info: RB520S40 SURFACE MOUNT SCHOTTKY BARRIER DIODE SOD-523 VOLTAGE FEATURES Unit：inch mm • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Negligible Reverse Recovery Time 0.050(1.25) 0.045(1.15) • Low Reverse Capacitance

Contextual Info: RB520S40 SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE FEATURES SOD-523 Unit：inch mm • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Negligible Reverse Recovery Time 0.050(1.25) 0.045(1.15) • Low Reverse Capacitance

24V dual-coil brushless fan regulator circuit

Abstract: BOP 286 24v DC motor dc motor for 24v 4 pin hall marking code 6 "DC Motor" 4 pin hall sensor DC MOTOR 24v Dual Complementary Darlington Power Supply electric motor brushes 24v dc
Contextual Info: AH266 High Voltage Hall Effect Latch General Description Features - On-chip Hall plate - Operating voltage: 4V~28V - Output current: 400mA Continuous, 25oC - Reverse protection diode only for chip reverse power connecting (Note) - Output protection Zener breakdown Vz=62V(Typ)

BOP 286

Abstract: ATS266 BRUSHLESS DC MOTOR an 132 hall sensor
Contextual Info: ATS266 High Voltage Hall Effect Latch „ Features „ General Description - On-chip Hall plate - Operating voltage: 4V~28V - Output current: 400mA Continuous - Reverse protection diode only for chip reverse power connecting (Note) - Output protection Zener breakdown Vz=56V(Typ)

hall sensor 4-pin SIP

Abstract: 24V DC brushless fan regulator circuit AH266 circuit diagram of hall effect
Contextual Info: AH266 High Voltage Hall Effect Latch „ Features „ General Description - On-chip Hall plate - Operating voltage: 4V~28V - Output current: 400mA Continuous, 25oC - Reverse protection diode only for chip reverse power connecting (Note) - Output protection Zener breakdown Vz=62V(Typ)

XBS206S17R

Abstract: XBS206
Contextual Info: XBS206S17R-G ETR1613-002a Schottky Barrier Diode, 2A, 60V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.615V TYP. ●Rectification Forward Current : IF(AVE)=2A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage

XBS204

Contextual Info: XBS204S17R-G ETR1612-002a Schottky Barrier Diode, 2A, 40V Type •APPLICATIONS ■FEATURES Forward Voltage : VF=0.485V TYP. ●Rectification Forward Current : IF(AVE)=2A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage

XBS303V17R-G

Abstract: XBS303V17R XBS30
Contextual Info: XBS303V17R-G ETR1614-001a Schottky Barrier Diode, 3A, 30V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.355V TYP. ●Rectification Forward Current : IF(AVE)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage

XBS304S17R-G

Abstract: ETR1615-002a XBS30 304S17
Contextual Info: XBS304S17R-G ETR1615-002a Schottky Barrier Diode, 3A, 40V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.465V TYP. ●Rectification Forward Current : IF(AVE)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage

XBS104S13

Contextual Info: XBS104S13 ETR1608-002 Schottky Barrier Diode, 1A, 40V Type •APPLICATIONS ■FEATURES Forward Voltage : VF=0.49V TYP. ●Rectification Forward Current : IF(AV)=1A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=40V

XBS204S17

Contextual Info: XBS204S17 ETR1612-002 Schottky Barrier Diode, 2A, 40V Type •APPLICATIONS ■FEATURES Forward Voltage : VF=0.485V TYP. ●Rectification Forward Current : IF(AV)=2A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=40V

BA604

Contextual Info: BA604 TELEFUNKEN Semiconductors Silicon Planar Diode Applications General purpose 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage, non repetitive Reverse voltage Peak forward surge current Repetitive peak forward current Forward current

Contextual Info: XBS053V15 ETR1607-002 Schottky Barrier Diode, 500mA, 30V Type •APPLICATIONS ■FEATURES Forward Voltage : VF=0.40V TYP. ●Rectification Forward Current : IF(AV)=500mA ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=30V

Marking Code s3 diode

Contextual Info: PRELIMINARY SD101AWS - SD101CWS SURFACE MOUNT SCHOTTKY BARRIER SWITCHING DIODE POWER SEMICONDUCTOR Features • • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance