DIODE REA Search Results
DIODE REA Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
| CUZ24V |
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Zener Diode, 24 V, USC | Datasheet | ||
| CEZ5V6 |
|
Zener Diode, 5.6 V, ESC | Datasheet |
DIODE REA Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
RLD2WMNV1
Abstract: BU9369FVM
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NJW4710
Abstract: NJW4710VE1
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NJW4710 NJW4710 NJW4710VE1 200MHz 500MHz SSOP24-E1 375TYP NJW4710VE1 | |
NJW4710
Abstract: NJW4710VE1
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NJW4710 NJW4710 NJW4710VE1 200MHz 500MHz SSOP24-E1 375TYP NJW4710VE1 | |
BAS40L
Abstract: marking code s6 SOD-882L
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M3D891 BAS40L OD882 MDB391 SCA75 613514/01/pp8 BAS40L marking code s6 SOD-882L | |
BAP50LX
Abstract: SMD MARKING CODE M 4 Diode
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BAP50LX OD882T sym006 BAP50LX SMD MARKING CODE M 4 Diode | |
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Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC6H065 O-220AC STPSC6H065D STPSC6H065G-TR DocID023247 | |
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Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC10H065 O-220AC STPSC10H065D STPSC10H065G-TR DocID023604 | |
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Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC8H065 O-220AC O-220AC STPSC8H065D STPSC8H065DI STPSC8H065B-TR STPSC8H065G-TR DocID023603 | |
Scans-0017402
Abstract: general electric bulb thermometer pf 9sg
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OCR Scan |
34DK3 K-55611-TD378-1 Scans-0017402 general electric bulb thermometer pf 9sg | |
MBD501
Abstract: MBD701
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MBD501 MBD701 MBD501 MBD701 | |
IDG 600
Abstract: M61880FP 20P2N-A M61880
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M61880FP REJ03F0068-0100Z M61880FP IDG 600 20P2N-A M61880 | |
thyristor code
Abstract: 1KHZ thyristor thyristor h 250 tb 15 R216CH12FJO Anti-Parallel Thyristor
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OCR Scan |
SN151JL thyristor code 1KHZ thyristor thyristor h 250 tb 15 R216CH12FJO Anti-Parallel Thyristor | |
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Contextual Info: http://www.sanken-ele.co.jp SANKEN ELECTRIC MP2-202S Mar. 2008 Fast Recovery Diode General Description MP2-202S is an ultrafast recovery diode of low leak current. Life time killer selection realizes low leak current at high temperature. Package Applications |
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MP2-202S MP2-202S 100mA /200mA | |
1N4148 krad
Abstract: SMD ZENER DIODE 19v LM136A-2.5QML LM136-2.5
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LM136A-2 1N4148 krad SMD ZENER DIODE 19v LM136A-2.5QML LM136-2.5 | |
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kt 3298
Abstract: SVC202SPA CM 3171
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ENN698D SVC202SPA SVC202SPA] kt 3298 SVC202SPA CM 3171 | |
CD61
Abstract: CS61 powerex cd61
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powerex pow-r-blok
Abstract: powerex cd61
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Isola1--16 powerex pow-r-blok powerex cd61 | |
25cg3
Abstract: 6CG3 Scans-0017368
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OCR Scan |
25CG3 25CG3 6CG3 Scans-0017368 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BB178 Preliminary DIODE VHF VARIABLE CAPACITANCE DIODE DESCRIPTION The UTC BB178 is a planar technology variable capacitance diode providing the designers excellent matching performance, ultra-low series resistance and great linearity. |
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BB178 OD-523 BB178 OD-523 BB178L-CC2-R BB178G-CC2-R QW-R601-032 | |
SMD MARKING 541 DIODE
Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
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M3D178 BA792 MAM139 OD110) OD110 SCDS47 113061/1100/01/pp8 SMD MARKING 541 DIODE smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777 | |
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Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0200 Rev.2.00 Jan 28, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A |
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RJS6005WDPK R07DS0901EJ0200 PRSS0004ZE-A | |
laptop mother board voltage details
Abstract: 3904 TRANSISTOR AMD Sempron 140 2N3904 LM95241 LM95241CIMM LM95241CIMM-1 LM95241CIMM-2 LM95241CIMMX LM95241CIMMX-1
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LM95241 65nm/90nm) LM95241 laptop mother board voltage details 3904 TRANSISTOR AMD Sempron 140 2N3904 LM95241CIMM LM95241CIMM-1 LM95241CIMM-2 LM95241CIMMX LM95241CIMMX-1 | |
NX7300BA-CC
Abstract: NX7301BA-CC NX7302BA-CC NX7303BA-CC STM-16
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NX7300BA-CC NX7300BA-CC STM-16 NX7301BA-CC NX7302BA-CC NX7303BA-CC | |
S3 DIODE schottky
Abstract: SOD882 S3 marking DIODE BAT54L Marking s3 Schottky barrier Marking "s3" Schottky barrier MARKING C SOD882
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M3D891 BAT54L OD882 MDB391 SCA75 613514/01/pp8 S3 DIODE schottky SOD882 S3 marking DIODE BAT54L Marking s3 Schottky barrier Marking "s3" Schottky barrier MARKING C SOD882 | |