DIODE RA 225 R Search Results

diode RA 225 R

Contextual Info: D A 1 0 S H T 1 2 -2 2 0 Silicon C a rb id e S ch o ttk y Rectifier V rrm =1200V Ip = 10 A Qc = 19 nC 225 °C Max Tj S ilicon C arbide Pow er Schottky Diode Featu res TO-220 Pa ck a ge • 1200 V Schottky Rectifier • 225 °C Maximum Operating Temperature

Contextual Info: DA10SHT12-263 Silicon Carbide Schottky Rectifier Silicon Carbide Power Schottky Diode Vrrm = 1200 V lF = 10 A Qc = 19 nC F e a tu re s 225 °C Max Tj T O -2 6 3 P a c k a g e • 1200 V Schottky Rectifier • 225 °C Maximum Operating Temperature • Zero Reverse Recovery Current

RFM18N08

Abstract: TA9286 RCA 3432 RFM18N10 RFP18N08 RFP18N10
Contextual Info: Standard Pow er M O S FE T s RFM18N08, RFM18N10, RFP18N08, RFP18N10 File N um ber 1446 N-Channel Enhancment-Mode Power Field-Effect Transistors 18 A , 8 0 V — 100 V fo s fo ri : 0 .1 0 Features: m SOA is power-dissipation lim ited • Nanosecond switching speeds

F15N05L

Abstract: F15N06L f15n05 RFP15N05L f15n RFM15N05L RFP15N06L RFM15N06L rca application notes RCA bipolar transistors
Contextual Info: Logic-Level Power MOSFETs File N u m be r 1558 RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET t e r m in a l d ia g r a m

Diode BAY 46

Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a

diode RA 225 R

Contextual Info: APT8065BVR • R A dvanced W .\A p o w e r Te c h n o lo g y " soov i3a o.6soq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: • R ADVANCED W .\A po w er Techno lo g y " APT8065SVR soov i3a o.6soq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

integrated circuits equivalents list

Abstract: fey101 7400N FCY101 7490N FCL102 7476N FCK 111 fch 191 FCL101
Contextual Info: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC •RC ■RC ■RC ■RC ■RC RC RC RC RC ■RC RC 224 225 226 227 231 234 236 246 261 266 286 296 M ullard comparable

Contextual Info: DACO SEMICONDUCTOR CO.,LTD. SILICON CA RBID E SCH O TTKY DIODE 12A Features TO -247 Package 1200 V Schottky Rectifier 225 °C Maximum Operating Temperature Zero Reverse Recovery Current Positive Temperature Coefficient of V Temperature Independent Switching Behavior

diode RA 225 R

Contextual Info: MOTOROLA Order this document by BSS84LT1/D SEMICONDUCTOR TECHNICAL DATA 6 P t. N ml • !V i: BSS84LT1 Motorola Preferred Device Low rDS on Sm all-S ignal MOSFETs TMOS Single P-Channel Field Effect Transistors ~ M r W TMOS ’ P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

BSS84

Abstract: MOSFET P-Channel sot-23
Contextual Info: MOTOROLA Order this document by BSS84/D SEMICONDUCTOR TECHNICAL DATA G r e e n L i n e BSS84 Motorola Preferred Device Low rDS on Sm all-S ignal MOSFETs TMOS Single P-Channel Field Effect Transistors ~M r W TMOS ’ P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

integrated circuits equivalents list

Abstract: FCH161 FCH181 FCH191 FJJ14 7400N FCL101 equivalent 7420N FCL101 FJH111
Contextual Info: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS Mullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC •RC ■RC ■RC ■RC ■RC RC RC RC RC ■RC RC 224 225 226 227 231 234 236 246 261 266 286 296 Mullard comparable

integrated circuits equivalents list

Abstract: FCH141 FCH191 7400N FCL101 7402N 7420N FJH101 Mullard Diode FJH121
Contextual Info: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC 224 •RC 225 ■RC 226 ■RC 227 ■RC 231 ■RC 234 RC 236 RC 246 RC 261 RC 266 ■RC 286 RC 296 M ullard comparable

integrated circuits equivalents list

Abstract: FCY101 FCH151 FCH191 7400N 7402N 7420N FCL101 FJH101 FJH111
Contextual Info: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC 224 •RC 225 ■RC 226 ■RC 227 ■RC 231 ■RC 234 RC 236 RC 246 RC 261 RC 266 ■RC 286 RC 296 M ullard comparable

Contextual Info: 8-CHANNEL SOURCE DRIVERS This versatile fam ily of integrated circuits will w ork with m any com binations of logic- and load-voltage levels, m eeting interface requirem ents beyond the capabilities of standard logic buffers. Series U D N2580A/LW source drivers can drive incandescent, LED, or vacuum

ta9230

Abstract: RFM15N12 RFM15N15 RFP15N12 RFP15N15 ta9195
Contextual Info: Standard Power MOSFETs RFM15N12, RFM15N15, RFP15N12, RFP15N15 File N u m be r 1443 N-Channel Enhancement-Mode Power Field-Effect Transistors 15 A, 120 V — 150 V rDs on : 0.15 fi Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds

CK5787WA

Abstract: subminiature tubes EZ Anode 105 Raytheon Company industrial tube company EZ 103
Contextual Info: TECHNICAL IN FO R M A T IO N RELIABLE SUBMINIATURE GAS DIODE TYPE Ç x -C -e .L L ej -T L -c — e - £ J - / — l O -n — A - CK5787 W A The CK5787WA is a co ld cathode, g a s - fille d diode of sub m iniatu re co n stru ctio n designed fo r service as a vo lta g e re g u la to r.

1MBH60-090

Abstract: 1MBH65-090 HIGH VOLTAGE DIODE for microwave ovens ERD60-100 T0220AB 2mbi
Contextual Info: in • • • • IG B T m old typ es High speed sw itch in g • Low saturation vo ltag e V o lta g e drive m e th o d p erm its lo w p o w er drive S uited fo r high fre q u en cy p o w e r supplies, such as m icro w a ve ovens W h e n using these IGBTs, FUJI'S fast recovery diode ER D 60-100 is required.

integrated circuits equivalents list

Abstract: FCH111 Mullard Diode FCL101 7472N equivalent 7400N FCH131 7402N 7420N FJH111
Contextual Info: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L V E R S IO N S Mullard equivalent Type No. TTL r a n g e DTL r a n g e - RC 206 - RC 210 RC 216 RC •RC ■RC ■RC ■RC ■RC RC RC RC RC ■RC RC 224 225 226 227 231 234 236 246 261 266 286 296 Mullard

DS493

Abstract: DS4933
Contextual Info: M ITEL S E M IC O N D U C T O R GP800DHB18S Powerline N-Channel IGBT Module Advance Inform ation DS4933 - 2.8 February 1999 Supesedes August 1998, version DS4933-2.0 T he G P 800D H B 18S is a dual sw itch 1800V, robust n c h a n n e l e n h a n c e m e n t m o d e in s u la te d g a te b ip o la r

8n20

Abstract: 8N18 rfm8n
Contextual Info: H A J R R RFM 8N18/8N20 RFP8N18/8N20 I S HARRIS SEMICOND SECTOR 5fc>E J> m 43G2E71 0Q41b7fl TTÔ IHAS August 1991 N-Channel Enhancement Mode Power Field Effect Transistors 7 ^ 3 4 */ Packages Features T0-204AA • 8A, 180V and 200V • rDS(on = o .s n • S O A is Pow er-D issipation Limited

15N15

Abstract: rfm15n15 diode RA 225 R
Contextual Info: R FM 15N 12/15N 15 R FP15N12/15N15 3 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u s t 1991 Packages Features T 0 -204A A BOTTOM VIEW • 15 A , 1 2 0V a n d 150V • r D S on) = 0 .1 5 f l DRAIN (FLANGE) SOURCE • S O A is P o w e r-D is s ip a tio n L im ite d

5d surface mount diode

Abstract: MMBL914H A12E
Contextual Info: ] 1MMBL914H Surface M ount Switching Diode SWITCHING DIODE 200mAMPERS 100VOLTS Features: ‘ High Speed ^ 4ns ‘ Low Rever Leakage Current ‘ Small Outline Surface Mount SOD-323 Package SOD -323 Outline Dimensions Unit:mm MILLMETERS Dim A B C D E H ,1 K

RFL2N05L

Abstract: RFL2N06L RFP4N05L RFP4N06L TA9520
Contextual Info: Logic-Level Power MOSFETs RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L File N u m be r 1560 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINALDIAGRAM 2 and 4 A, 50 V — 60 V rDs(on): 0.6 0 and 0.750 Features: • ■