DIODE R 107 Search Results

MONOLITHIC DIODE matrices

Abstract: HM1-051 diode matrix hm1 Diode S4 55a HM9-050 harris diode HM9-081 diode matrix diode matrix harris HM-030
Contextual Info: CIE1 HM-010/030/040/050/ 074/080/090 HARRIS SEM IC O N D U C TO R A D IV ISIO N O F H A R R IS C O R P O R A T IO N MIL Temperature Diode Matrices Harris M o n olithic Diode Matrices consist o f arrays o f passivated silicon diodes, fabricated in dielectrically

25-12io8

Abstract: MDC 1200 DIODE mdc 40-14 MCO 1510 MCd 25-04 ABB thyristor modules ASEA thyristor mdc 55-04 hs 50 abb E72873
Contextual Info: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-Module d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z5-Z3 Phase control Thyristor-Diode-Modules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

Contextual Info: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-M odule d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z 5 -Z 3 Phase control Thyristor-Diode-M odules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

FP15R12KE3

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FP15R12KE3 Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung

FP15R12KE3

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FP15R12KE3 Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung

FP15R12KE3

Abstract: FP15R12KE3 datasheet
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FP15R12KE3 Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung

FP15R12KE3

Abstract: FP15R12KE3 datasheet
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FP15R12KE3 Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung

a 1201 sanyo

Abstract: TIC 2060 tic 1068 A 3202 DIODE um 3567 diode e 2060 TIC 2060 D
Contextual Info: Ordering number : EN698C I SArnYO SVC202,202SPA No.6980 Diffused Junction Type Silicon Diode i Varactor Diode IOCAP for FM Receiver Electronic Tuning F e a tu r e s • Twin type FM electronic tuning-use varactor diode which excels in large input characteristics.

l7949

Abstract: HP STEP RECOVERY DIODES
Contextual Info: Xhfíl PACKARD APPLICATION NOTE 989 Step Recovery Diode Doubler INTRODUCTION A straightforw ard technique fo r m ultip lie r design is pres­ ented. The in p u t c irc u it is a low pass filte r w hich allows all of the in pu t pow er to be absorbed by the diode and reflects

PJ 969 diode

Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
Contextual Info: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode

D1109

Abstract: D1103 6 PIN TRANSISTORS 566
Contextual Info: SURFACE MOUNT DIODE ARRAYS MMAD130 MMAD1103 These diode arrays are m ultiple diode junctions fabricated by a planar pro­ cess and m ounted in integrated circuit packages fo r use in high-current, fast-sw itching core-driver applications. These arrays offer many o f the

varactor diode notes

Abstract: varactor diode high frequency x band varactor diode "Varactor Diode" CAY10 Parametric Varactor diodes
Contextual Info: GALLIUM ARSENIDE VARACTOR DIODE 125 150 Tstud CO CAYIO TOTAL DISSIPATION PLOTTED AGAINST STUD TEMPERATURE ffr. tm r e ì CAYIO Page C I GALLIUM ARSENIDE VARACTOR DIODE CAYIO TEN TA TIV E DATA Gallium arsenide varactor diode with a high cut-off frequency for use in

ica 700 Y

Abstract: Diode LT 228 LL4735A
Contextual Info: Central CLL4729A THRU CLL4764A Sem iconductor Corp. 1.0W ZENER DIODE 5% TOLERANCE DESCRIPTIO N: The C EN T R A L SE M IC O N D U C T O R CLL4729A Series Silicon Zener Diode is a high quality voltage regulator for use in surface mount industrial, commercial, entertainment and computer

Rf Detectors

Abstract: tSA401 BA481 noise diode mixer diode KMW450 BB533
Contextual Info: N AMER PHILIPS/DISCRETE b*ÌE D m b b S 3 T31 DDEblb? 07 S BiAPX BA4Ö 1 A U.H.F. MIXER DIODE S ilico n epitaxial S c h o ttk y -b a rrie r diode in a DO -34 envelope and intended fo r m ixe r applica tio n s in u .h .f. tuners, t.v. m odulators and r.f. detectors.

BMU8-915-01-R

Abstract: BMU8 BMU8-940-02-R BMU8-915-02-R 975nm 960nM bookham diode laser diode fiber coupled
Contextual Info: Data Sheet 8W 9xxnm Uncooled Multimode Laser Diode Module BMU8-9xx-01/02-R The Bookham BMU8-9xx-01/02-R multimode laser diode module series has been designed to provide the high power and reliability required for pumping next generation solid-state and fiber lasers, and for direct applications. The module

BMU6-975-01

Abstract: BMU7-915-01-R BMU6-975-02-R
Contextual Info: Data Sheet 7W/6W 9xxnm Uncooled Multimode Laser Diode Module BMU7-9xx-01/02-R The Bookham BMU7-9xx-01/02-R multimode laser diode module series has been designed to provide the high power and reliability required for pumping next generation solid-state and fiber lasers, and for direct applications. The module

Contextual Info: MA4P506-1072 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 500 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.0.3 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.1.0p Carrier Lifetime (S)3.0u @I(F) (test) (A)10m @I(R) (A) (Test Condition)

Contextual Info: MA4P504-1072 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 500 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.0.6 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.0.5p Carrier Lifetime (S)1.0u @I(F) (test) (A)10m @I(R) (A) (Test Condition)

Contextual Info: MA4P505-1072 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 500 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.0.45 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.0.6p Carrier Lifetime (S)2.0u @I(F) (test) (A)10m @I(R) (A) (Test Condition)

melf diode marking code

Contextual Info: Central" CLL4728A THRU CLL4764A Semiconductor Corp. SURFACE MOUNT 1.0W SILICON ZENER DIODE 5% TOLERANCE DESCRIPTION: The C E N T R A L S E M IC O N D U C T O R CLL4728A Series Silicon Zener Diode is a high quality volt­ age regulator for use in surface mount industrial,

d3s6m

Abstract: RFE-200
Contextual Info: — / t'J T 7 Schottky Barrier Diode Axial Diode • O U T L IN E D IM E N S IO N S D3S6M 60V 3A ■ R A TIN G S ÌÈ ÌÌÌi^ : /E ! Ì& m A bsolute Maximum R atings @ Item Symbol O perating J u n c tio n Tem perature - t± A M & m i± Maximum R everse Voltage

Contextual Info: TM C e n tra l CLL4729A THRU CLL4764A Sem 1.0W ZENER DIODE 5% TOLERANCE ic o n d u c to rC o rp . DESCRIPTION: The CEN TRAL S EM IC O N DU CTO R C LL4729A Series Silicon Zener Diode is a high quality voltage regulator fo r use in surface m ount industrial,

Contextual Info: Data Sheet June 1999 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations LG1625AXF Laser Driver Features Description • High data-rate laser diode/LED driver The LG1625AXF is a gallium-arsenide GaAs laser diode driver to be used with direct modulated laser

Contextual Info: Central" CLL4729A THRU CLL4764A S e m ic o n d u c to r C o rp . 1.0W ZENER DIODE 5% TOLERANCE DESCRIPTION: The CEN TRAL S EM IC O N DU CTO R C LL4729A Series Silicon Zener Diode is a high quality voltage regulator for use in surface m ount industrial, c o m m e rc ia l, e n te r ta in m e n t and c o m p u te r