DIODE QE RAJ Search Results

transistor C734

Abstract: C705 diode c734 DIODE C705 C734 transistor diode 7g2
Contextual Info: PD - 9.796A bitemational [ÏÔR]Rectifier IRGBC30UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V ces = 600V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes

DIODE RECTIFIER BRIDGE SINGLE 55a 600v

Abstract: IRG4PC50UD ir igbt BH rn transistor
Contextual Info: International Rectifier IOR PD -9.1471A IRG4PC50UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

Contextual Info: I , ,• I In te rn a tio n a l IQ R R ectifier PD -5.05S preliminary "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK G A400TD 60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

Contextual Info: PD-5.043 International Iö R Rectifier IGBT SIP MODULE Features CPV363M4K Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 1 0 fis@ 125°C, \feE = 15V • Fully isolated printed circuit board mount package

DIODE S 43a

Abstract: IRF1010N
Contextual Info: PD - 9.1372A nternational I O R Rectifier IRF1010NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF1010NS • Low-profile through-hole (IRF101ONL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

rectifier diode 6 amp 400 volt

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module M H P M 7A 15A 60A Integrated Power Stage for 1.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A10E60DC3) The MHPM7A15A60A module integrates a 3-phase input

Contextual Info: International l R Rectifier preliminary SINGLE SWITCH IGBT DOUBLE INT-A-PAK PD-50071A G A600G D25S Standard Speed IGBT Features • S tan dard speed, op tim ized fo r ba tte ry pow ered application • V e ry low con du ction losses • H E X F R E D ™ an tipa ralle l diode s w ith ultra-soft

pm20cma060

Abstract: 3 phase rectifier circuit diagram igbt ultrafast n channel 600v 20a IGBT h 9128 Alcohol detection with vehicle controlling pm20c P channel 600v 20a IGBT resistor sms diode B5C 3 phase UPS block WITH CIRCUIT diagram
Contextual Info: International fegjRectifier PD 9128 provisional_ PM20CMA060 IGBT INTELLIGENT MODULE Features • 3 phase IGBT bridge with drive and protection circuit. • 3 kW output power at 300VDC, 8kHz, Tc = 85°C • "UltraFast" IGBT and “HEXFRED”™ Ultratast, Soft Recovery

Contextual Info: PD -5.046 International TOR Rectifier CPV362M4F IG BTSIP MODULE Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for medium operating 1 to 10 kHz

Contextual Info: PD - 9 .1 6 1 9 A International I R Rectifier 1RG4BC30K-S PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc =10ps, @ 360V VCE start , T j = 125°C,

RL1024PAG-021

Abstract: RL2048PAG-021 CCD linear array RL2048P RL0512PAG-021 fast linear ccd 512 photodiode array perkinelmer RL2048PAQ-021 photodiode D11 rl1024P
Contextual Info: CCD P-Series Linear Photodiode Array Imagers 14µm, single output, 512, 1024, 2048 elements Features Description In the P-series linear imager, PerkinElmer has combined the best features of high-sensitivity photodiode array detection and high-speed chargecoupled scanning to offer an uncompromising solution to the increasing

CCD linear array

Abstract: RL2048PAG-021 RL1024PAG-021 RL0512PAG-021 fast linear ccd 512 linear array photodiode 2048 elements RL2048PAQ-021 2048 x 1 ccd linear array diode 250nm RL2048P
Contextual Info: CCD P-Series Linear Photodiode Array Imagers 14µm, single output, 512, 1024, 2048 elements Features Description In the P-series linear imager, PerkinElmer has combined the best features of high-sensitivity photodiode array detection and high-speed chargecoupled scanning to offer an uncompromising solution to the increasing

Contextual Info: High Speed InGaAs PIN Photodiodes C30616, C30637, C30617, C30618 Series Overview Features and Benefits This series of high speed InGaAs photodiodes is designed for use in OEM fiber-optic communications systems and high-speed receiver applications including trunk line, LAN, fiber-in-the-loop

C30617BH

Contextual Info: Overview Features and Benefits This series of high speed InGaAs photodiodes is designed for use in OEM fiber-optic communications systems and high-speed receiver applications including trunk line, LAN, fiber-in-the-loop and data communications. Ceramic submount packages are available for easy

Lens Mount M72 x 0.75

Abstract: RETICON linescan ccd sensor MDR26 reticon photodiode array CCD-Sensor SB4480CLG-011 LR 3441 DTS0507 M72X0
Contextual Info: 4K Digital Linescan Camera Features and Benefits High speed 80 MHz data rate 14 µm square pixels in 4096 element resolution Small size—109.2 mm h x 81.3 mm (w) x 40.1 mm (d) 8/10/12- bit output format High line rates up to 19 kHz The SmartBlue 4K is the latest addition to PerkinElmer’s family of high-speed digital

Contextual Info: HARRIS SEMICOND SECTOR bûE D • 43D2271 GÜSGS1S n i HHAS HGTG20N120E2 34A, 1200V N-Channel IGBT Decem ber 1993 Package Features JEDEC STYLE TO-247 TOP VIP N • 34 Amp, 1200 Volt • Latch Free Operation • Typical Fall Time - 780ns t COLLECTOR BOTTOM SIDE

RETICON photodiode array 512

Abstract: RL1202LGQ-711 RL1205LGQ-711 RETICON RETICON 128 RL1210LGQ-711 RL1201LGQ-711 RETICON TB series sensors Reticon photodiode array 1024 pixel photodiode 256 elements silicon
Contextual Info: Imaging Telecom Imaging Product Line L-Series Linear CMOS Spectroscopy Sensor 25 or 50 µm pitch, 2.5 mm aperture, 128 to 1024 elements Description Features The PerkinElmer L-series of monolithic self-scanning linear photodiode arrays offers a high quality, low cost solution

RETICON photodiode array 512

Abstract: AMPLI DUAL CV 60 reticon photodiode array RL1505LFQ-711 RETICON RL1202LGQ-711 Reticon photodiode array 1024 pixel RL1502LFQ-711 RL1201LGQ-711 RL1205
Contextual Info: Imaging Telecom Imaging Product Line L-Series Linear CMOS Spectroscopy Sensor 25 or 50 µm pitch, 2.5 mm aperture, 128 to 1024 elements Description Features The PerkinElmer L-series of monolithic self-scanning linear photodiode arrays offers a high quality, low cost solution

RETICON photodiode array 512

Abstract: hirose 6 pin RETICON Reticon photodiode array 1024 pixel nikon CCD line-scan image sensor linescan ccd sensor SB1440CLG-011 nikon sensor digital camera circuit
Contextual Info: w w w. o p t o e l e c t ro n i c s . p e r k i n e l m e r. c o m Applications Machine vision High speed inspection Postal/parcel sorting Web inspection Surface inspection OCR/bar code reading T The two-point flat field pixel correction circuits give the user

74HC FAMILY

Abstract: elmos TMD54HC373 TMD54HC374 TMD74HC373 TMD74HC374
Contextual Info: TM D54HC 373/TM D74HC 373 3 STATE OCTAL LATCHES TM D54HC 374/TM D74HC 374 TELMOS INC. 3 STATE OCTAL D-FLIP-FLO PS • • • • • • • • CMOS INPUT COMPATIBLE 13 NS PROPAGATION DELAY TYP. 1 ^A MAX. INPUT CURRENT DRIVES 30 LS-TTL LOADS FULL PARALLEL LOAD ACCESS

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

BFT65

Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions

LA252

Abstract: Bipolar Junction Transistor npn VCE 3.7 series 160i LA200 LA201 LA202 LA250 LA251 210 volt Zener Diode
Contextual Info: B E N IM U M c o r p o r a t i Om LA200 Series LA250 mDDEH8 SEMICUSTOM LINEAR ARRAYS DATA SHEET CIRCUIT DESCRIPTION ADVANTAGES OF THE SEMICUSTOM ARE: • custom circuitry at low cost Th e G e n n u m s e m ic u s to m in te g ra te d c irc u its are a rra y s of

TMS4464

Abstract: TMS 2764 Texas Instruments IC mk4564 mcm6256 tms4500a Fuji Electric tv schematic diagram ET 439 power module fuji mcm6665 74L5138 TMS4500
Contextual Info: SMYOOO2 . ,MOS Memory Data Book 1984 II I III \' h' \/ Commercial and Military , :\ Specifications ' 1'/ ! . .Jf TEXAS INSTRUMENTS Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide _ Glossary/Timing Conventions/Data Sheet Structure