DIODE Q MARKING Search Results

Contextual Info: UM5079/Q Single Line ESD Protection Diode Array UM5079/Q FBP2 1.0x0.6 /DFN2 1.0×0.6 General Description The UM5079/Q ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional area

KDS2236M

Abstract: KDS2236S marking 4v
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KDS2236M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AFC APPLICATION FOR FM RECEIVER. KDS2236M FEATURES • High Q : Q=70 Min. (f=50MHz). • Low Reverse Current : lR=100nA(Max.) (Vr=4V).

V23136 tyco relay

Abstract: 5 pin relay 12vdc free 5 pin relay 12vdc for 40A 12VDC relay 5 pin relay 12vdc 200 ohm ISO 7588 V23136-B1001-X051 V23136-A1001-X057 for 40A 14VDC relay pin number 6 pin relay 12vdc with NO NC
Contextual Info: Automotive Relays Plug-in Mini ISO Relays Shrouded Power Relay F4 A Q Q Q Pin assignment similar to ISO 7588 part 1 Plug-in terminals Customized versions on request – Integrated components e.g. resistor, diode – Customized marking/color – Special cover with bracket

858787A

Abstract: TE1088 45h11 VF4A-65F11-S01 TE1088-R1
Contextual Info: Automotive Relays Plug-in Mini ISO Relays VF4A Standard, Shrouded and Weatherproof Q Q Q Pin assignment similar to ISO 7588 part 1 Plug-in terminals Customized versions on request – Integrated components (e.g. resistor, diode) – Customized marking – Special covers (e.g. brackets, shrouded)

6 pin relay 12vdc with NO NC

Abstract: 5 pin relay 12vdc 5 pin relay 12vdc with NO NC V23234-A1001-X036 V23234-C1001-X005 relay 12vdc with diode V2323 V23234-A0001-X032 V23234-A0004-X051 5 pin relay 12vdc no nc
Contextual Info: Automotive Relays Plug-in Mini ISO Relays Power Relay B Q Q Q Pin assignment similar to ISO 7588 part 1 Plug-in terminals Customized versions on request – 24VDC versions with contact gap >0.8mm – Integrated components e.g. resistor, diode – Customized marking/color

KDS2236M

Abstract: KDS2236S st Diode marking EE
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDS2236M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AFC APPLICATION FOR FM RECEIVER. FEATURES • High Q : Q=70 Min. (f=50MHz). • Low Reverse Current : lR=100nA(Max.) ( V r = 4 V ) . MAXIMUM RATINGS (Ta=25°C)

Contextual Info: SEMICONDUCTOR KDS2236M/S TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE AFC APPLICATION FOR FM RECEIVER. B A FEATURES ・High Q : Q=70 Min. (f=50MHz). O F ・Low Reverse Current : IR=100nA(Max.) (VR=4V). H G M C MAXIMUM RATING (Ta=25℃)

KDS2236S

Abstract: KDS2236M *2236 capacitance
Contextual Info: SEMICONDUCTOR KDS2236M/S TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE AFC APPLICATION FOR FM RECEIVER. B A FEATURES High Q : Q=70 Min. (f=50MHz). O F Low Reverse Current : IR=100nA(Max.) (VR=4V). H G M C SYMBOL RATING UNIT Reverse Voltage

KDS2236M

Abstract: KDS2236S 2236A
Contextual Info: KDS2236M/S SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE TECHNICAL DATA AFC APPLICATION FOR FM RECEIVER. B A FEATURES ᴌHigh Q : Q=70 Min. (f=50MHz). O F ᴌLow Reverse Current : IR=100nA(Max.) (VR=4V). H G M C MAXIMUM RATING (Ta=25ᴱ)

FBP02

Contextual Info: UM5059/Q Single Line ESD Protection Diode Array UM5059 UM5059Q FBP02 1.0x0.6 DFN2 1.0×0.6 General Description The UM5059/Q ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional area

1ss413

Abstract: SOD-523 marking Q
Contextual Info: 1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Q Top View Marking Code: "Q" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value

ksd2032

Abstract: SDV702
Contextual Info: SDV702 Semiconductor Variable Capacitance Diode Descriptions • AFC application for FM receiver Features • High Q : Q=70 Min. (f=50MHz) • Low reverse current : IR= 100nA(Max.) (VR=4V) Ordering Information Type No. SDV702 Marking Package Code DV2 SOT-23

SDV702D

Contextual Info: SDV702D Semiconductor Variable Capacitance Diode Descriptions • AFC application for FM receiver Features • High Q : Q=70 Min. (f=50MHz) • Low reverse current : IR= 100nA(Max.) (VR=4V) Ordering Information Type No. Marking SDV702D V2 Package Code SOD-323

2-pin ir receiver

Abstract: AFC marking SDV702F ksd2067 ksd 120 bsc 2401
Contextual Info: SDV702F Semiconductor Variable Capacitance Diode Descriptions • AFC application for FM receiver Features • High Q : Q=70 Min. (f=50MHz) • Low reverse current : IR= 100nA(Max.) (VR=4V) Ordering Information Type No. Marking Package Code SDV702F DV2 SOT-23F

Contextual Info: 33E D • fl2 3 b 3 2 Q Q O lb S Û S 0 H S IP Silicon Diode Array S IE M E N S / BGX 50 A SPCL-, SEM ICÔ N DS _ • Bridge configuration • High-speed switch diode chip 4 2 Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape

Contextual Info: Silicon Switching Diode Array • • BAV 74 F o r high -spe e d sw itching C o m m o n cathode Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package B A V 74 JA Q 62702-A498 Q 62 70 2-A 69 5 S O T 23 Maximum ratings per diode

V23136 tyco relay

Abstract: V23136-J1004-X050 V2313 FUSE x050 TE136
Contextual Info: Automotive Relays Plug-in Maxi ISO Relays Shrouded Power Relay F7 A Q Q Pin assignment similar to ISO 7588 part 1 Customized versions on request – Integrated components e.g. resistor, diode – Customized marking/color – Special cover with bracket Typical applications

Contextual Info: T - o l - ô l Silicon Low Leakage Diode Array 3SE D • fl2 3 b 3 2 Q SIEM ENS/ Q Q lb 5 b 4 3 BAW156 ISIP S P C L •, SEM ICON DS • Low Leakage applications • Medium speed switching times • Common anode Type Marking Ordering code 8-mm tape Package

H20R120

Abstract: rg54 h20r120 igbt
Contextual Info: Soft Switching Series IHW15N120R q Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications

BBY55-02W

Abstract: CT10 SCD80
Contextual Info: BBY55-02W Silicon Tuning Diode
Excellent linearity
High Q hyperabrupt tuning diode 2
Low series inductance
Designed for low tuning voltage operation for VCO's in mobile communications equipment 1
Very low capacitance spread VES05991 Type Marking

Contextual Info: SIEMENS BBY53 Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code BBY53 S7s Q62702-B824

Contextual Info: SIEMENS BBY 51-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation • For VCO’s in mobile communications equipment Type Marking Ordering Code Pin Configuration

Q62702-B0825

Contextual Info: BBY 53-03W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration

B824 transistor

Abstract: transistor B824 B824 Q62702-B824
Contextual Info: BBY 53 Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration BBY 53