DIODE Q MARKING Search Results

V23136 tyco relay

Abstract: 5 pin relay 12vdc free 5 pin relay 12vdc for 40A 12VDC relay 5 pin relay 12vdc 200 ohm ISO 7588 V23136-B1001-X051 V23136-A1001-X057 for 40A 14VDC relay pin number 6 pin relay 12vdc with NO NC
Contextual Info: Automotive Relays Plug-in Mini ISO Relays Shrouded Power Relay F4 A Q Q Q Pin assignment similar to ISO 7588 part 1 Plug-in terminals Customized versions on request – Integrated components e.g. resistor, diode – Customized marking/color – Special cover with bracket

858787A

Abstract: TE1088 45h11 VF4A-65F11-S01 TE1088-R1
Contextual Info: Automotive Relays Plug-in Mini ISO Relays VF4A Standard, Shrouded and Weatherproof Q Q Q Pin assignment similar to ISO 7588 part 1 Plug-in terminals Customized versions on request – Integrated components (e.g. resistor, diode) – Customized marking – Special covers (e.g. brackets, shrouded)

6 pin relay 12vdc with NO NC

Abstract: 5 pin relay 12vdc 5 pin relay 12vdc with NO NC V23234-A1001-X036 V23234-C1001-X005 relay 12vdc with diode V2323 V23234-A0001-X032 V23234-A0004-X051 5 pin relay 12vdc no nc
Contextual Info: Automotive Relays Plug-in Mini ISO Relays Power Relay B Q Q Q Pin assignment similar to ISO 7588 part 1 Plug-in terminals Customized versions on request – 24VDC versions with contact gap >0.8mm – Integrated components e.g. resistor, diode – Customized marking/color

KDS2236S

Abstract: KDS2236M *2236 capacitance
Contextual Info: SEMICONDUCTOR KDS2236M/S TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE AFC APPLICATION FOR FM RECEIVER. B A FEATURES High Q : Q=70 Min. (f=50MHz). O F Low Reverse Current : IR=100nA(Max.) (VR=4V). H G M C SYMBOL RATING UNIT Reverse Voltage

532 nm

Contextual Info: RLTMPL-532 30-150 mW Q-SWITCHED PULSED LASER Green Diode Pumped Solid State Q-switched Laser All solid state 532 nm green q-switched laser featuring high peak power, high repetition rate and short pulse duration, which is widely used in industry, such as marking on the diamond or stone, teaching of nonlinear

Contextual Info: 33E D • fl2 3 b 3 2 Q Q O lb S Û S 0 H S IP Silicon Diode Array S IE M E N S / BGX 50 A SPCL-, SEM ICÔ N DS _ • Bridge configuration • High-speed switch diode chip 4 2 Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape

V23136 tyco relay

Abstract: V23136-J1004-X050 V2313 FUSE x050 TE136
Contextual Info: Automotive Relays Plug-in Maxi ISO Relays Shrouded Power Relay F7 A Q Q Pin assignment similar to ISO 7588 part 1 Customized versions on request – Integrated components e.g. resistor, diode – Customized marking/color – Special cover with bracket Typical applications

Contextual Info: T - o l - ô l Silicon Low Leakage Diode Array 3SE D • fl2 3 b 3 2 Q SIEM ENS/ Q Q lb 5 b 4 3 BAW156 ISIP S P C L •, SEM ICON DS • Low Leakage applications • Medium speed switching times • Common anode Type Marking Ordering code 8-mm tape Package

BBY55-02W

Abstract: CT10 SCD80
Contextual Info: BBY55-02W Silicon Tuning Diode
Excellent linearity
High Q hyperabrupt tuning diode 2
Low series inductance
Designed for low tuning voltage operation for VCO's in mobile communications equipment 1
Very low capacitance spread VES05991 Type Marking

h20r120

Abstract: h20r120 igbt igbt h20r120 H20R ALL h20r120 1200v diode to247 igbt 500V 15A IHW15N120R PG-TO-247-3-21 rg54
Contextual Info: Soft Switching Series IHW15N120R q Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :

Q62702B

Abstract: marking 34 diode
Contextual Info: SIEMENS BBY 51-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation • For VCO’s in mobile communications equipment Type Marking Ordering Code Pin Configuration

V23134

Abstract: V23134-J1052-D642 V23134 tyco V23134-J1052-X281 tyco V23134-j1052-d642 V23134-J1053-X282 V23134-J0056-X408 HB 2 24vdc relay max8786 ISO 7588
Contextual Info: Automotive Relays Plug-in Maxi ISO Relays Power Relay F7 Q Q Pin assignment similar to ISO 7588 part 1 Customized versions on request - 24VDC versions with contact gap >0.8mm - Integrated components e.g. resistor, diode - Customized marking/color - Special covers (e.g. notches, release features, brackets)

BBY52-02W

Abstract: SCD80 MARKING 02W bby5202w
Contextual Info: BBY52-02W Silicon Tuning Diode • High Q hyperband tuning diode • Low series inductance • Designed for low tuning voltage operation 2 • For VCO's in mobile communications equipment 1 VES05991 Type Marking Pin Configuration Package BBY52-02W K 1=C SCD80

ves05991

Abstract: SCD-80
Contextual Info: BBY 53-02W Silicon Tuning Diode • High Q hyperabrupt tuning diode 2 • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage 1 VES05991 Type Marking Pin Configuration Package BBY 53-02W

DIODE MARKING 541

Abstract: marking H6 BBY66-02V SC79 VES05991 CT45
Contextual Info: BBY66-02V Silicon Tuning Diode Preliminary data 2
High capacitance ratio
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation 1 for VCO' s in mobile communications equipment VES05991
Very low capacitance spread Type BBY66-02V Marking

Contextual Info: BBY 53-03W Silicon Tuning Diode 2 • High Q hyperabrupt tuning diode 1 • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage VPS05176 Type Marking Pin Configuration Package BBY 53-03W

V23074-A2002-A403

Abstract: 6 pin relay 12vdc with NO NC v23074-A1001-A403 15F-41 v23074-a1002-a403 relay 12vdc 10a relay 12vdc with diode V23074-A1001 MICRO RELAY 5 pin relay 12vdc free
Contextual Info: Automotive Relays Plug-in Micro ISO Relays Micro Relay A/VFMA Q High current version with limiting continuous current 30A at 85°C Q Pin assignment according to ISO 7588 part 3 Q Customized versions on request – 24VDC versions with special contact gap – Integrated components e.g. diode

BBY53-02W

Abstract: SCD80 VES05991
Contextual Info: BBY53-02W Silicon Tuning Diode
High Q hyperabrupt tuning diode 2
Designed for low tuning voltage operation for VCO's in mobile communications equipment
High ratio at low reverse voltage 1 VES05991 Type Marking Pin Configuration Package BBY53-02W L 1=C

diode marking 14

Contextual Info: BBY 52-02W Silicon Tuning Diode • High Q hyperband tuning diode • Low series inductance • Designed for low tuning voltage operation 2 • For VCO's in mobile communications equipment 1 VES05991 Type Marking Pin Configuration Package BBY 52-02W K 1=C

BBY51-02W

Abstract: SCD80 MARKING 02W
Contextual Info: BBY51-02W Silicon Tuning Diode
High Q hyperabrupt tuning diode 2
Low series inductance
Designed for low tuning voltage operation
For VCO's in mobile communications equipment 1 VES05991 Type Marking Pin Configuration Package BBY51-02W I 1=C SCD80 2=A

diode T3 Marking

Abstract: BBY53 BBY53-03W
Contextual Info: BBY53-03W 2 Silicon Tuning Diode 1
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation for VCO's in mobile communications equipment
High ratio at low reverse voltage Type BBY53-03W Marking white/5 VPS05176 Pin Configuration 1=C

BBY51-03W

Contextual Info: BBY51-03W Silicon Tuning Diode 2
High Q hyperabrupt tuning diode 1
Designed for low tuning voltage operation
For VCO's in mobile communications equipment VPS05176 Type Marking Pin Configuration Package BBY51-03W H 1=C SOD323 2=A Maximum Ratings Parameter

BBY66-05

Contextual Info: BBY66-05 3 Silicon Tuning Diode
High capacitance ratio
High Q hyperabrupt tuning diode 2
Designed for low tuning voltage operation for VCO' s in mobile communications equipment 1
Very low capacitance spread Type BBY66-05 Marking OBs Pin Configuration

h30r100

Abstract: IHW30N100R H30R1 600v 30a IGBT PG-TO-247-3-21 h30r igbt 1000v 30a
Contextual Info: Soft Switching Series IHW30N100R q Reverse Conducting IGBT with monolithic body diode Features: • 1.5V Forward voltage of monolithic body Diode • Full Current Rating of monolithic body Diode • Specified for TJmax = 175°C • Trench and Fieldstop technology for 1000 V applications offers :